Process for forming oxide superconducting films with a plurality of
metal buffer layers
    4.
    发明授权
    Process for forming oxide superconducting films with a plurality of metal buffer layers 失效
    用多个金属缓冲层形成氧化物超导膜的方法

    公开(公告)号:US5629269A

    公开(公告)日:1997-05-13

    申请号:US332479

    申请日:1994-10-31

    IPC分类号: H01L39/24 B05D5/12 B05D1/32

    CPC分类号: H01L39/2461 Y10S505/741

    摘要: Disclosed is a process for forming a super-conducting film, which a multi-layer metal film (buffer film) is formed at a specific temperature on a ceramic substrate and a superconducting film is formed at a specific temperature on the multi-layer metal film. According to this process, a superconducting film having a high critical temperature can be formed over the ceramic substrate while controlling or suppressing the occurrence of a chemical reaction between the substrate and the superconducting film, and required superconducting performances can be manifested or exhibited.

    摘要翻译: 公开了一种用于形成超导膜的方法,其中在特定温度下在陶瓷基板上形成多层金属膜(缓冲膜),并且在特定温度下在多层金属膜上形成超导膜 。 根据该方法,可以在陶瓷基板上形成具有高临界温度的超导膜,同时控制或抑制基板与超导膜之间的化学反应的发生,并且可以显示或显示所需的超导性能。

    Process for manufacturing multi-layer glass ceramic substrate
    9.
    发明授权
    Process for manufacturing multi-layer glass ceramic substrate 失效
    制造多层玻璃陶瓷基板的工艺

    公开(公告)号:US5458709A

    公开(公告)日:1995-10-17

    申请号:US867513

    申请日:1992-04-13

    摘要: A process for manufacturing a multi-layer glass ceramic substrate which includes the steps of forming green sheets containing ceramic powders and glass powders as main ingredients, laminating the green sheets, and firing the laminated green sheets to form a multi-layer glass ceramic substrate, wherein at least one green sheet containing porous glass powders as a part of the glass powders, is provided to control the shrinkage of the green sheets and prevent cracks or delamination. The preferred process includes the steps of forming a single layer by i) forming first green sheets containing ceramic powders, glass powders, hollow glass spheres and porous glass powders as main ingredients, ii) forming an interconnection layer on each of the first green sheets, and iii) laminating the first green sheets with the interconnection layer; sandwiching the signal layer between upper and lower green sheets containing ceramic powders and glass powders as main ingredients; and firing the sandwiched signal layer to form the multi-layer glass ceramic substrate.

    摘要翻译: 一种多层玻璃陶瓷基板的制造方法,其特征在于,包括以下工序:形成含有陶瓷粉末和玻璃粉末的生片,作为主要成分,层叠生片,烧成层叠的生片以形成多层玻璃陶瓷基板, 其中提供至少一个含有多孔玻璃粉末作为玻璃粉末的一部分的生片,以控制生片的收缩并防止裂纹或分层。 优选的方法包括以下步骤:i)形成包含陶瓷粉末,玻璃粉末,中空玻璃球和多孔玻璃粉末的第一生坯作为主要成分,ii)在每个第一生坯上形成互连层, 以及iii)将所述第一生片与所述互连层层叠; 将信号层夹在含有陶瓷粉末和玻璃粉末的上下生片之间作为主要成分; 并且对夹层信号层进行烧成以形成多层玻璃陶瓷基板。

    Process for producing Bi-Pb-Sr-Ca-Cu-O superconducting films
    10.
    发明授权
    Process for producing Bi-Pb-Sr-Ca-Cu-O superconducting films 失效
    生产Bi-Pb-Sr-Ca-Cu-O超导薄膜的方法

    公开(公告)号:US5306702A

    公开(公告)日:1994-04-26

    申请号:US860505

    申请日:1992-06-17

    摘要: A process for producing a Bi-based perovskite superconducting film, comprising the steps of forming on a substrate a Pb-film, containing Bi-base material film comprising Bi, Pb, Sr, Ca and Cu in a Bi:Pb:Sr:Ca:Cu molar ratio of (1.9 to 2.1):(1.2 to 2.2, preferably 1.5 to 1.8):2:(1.9 to 2.2):(3 to 3.5) and sintering the Pb-containing Bi-base material film in an oxygen-containing atmosphere. The sintering step includes a main sintering period of 20 to 120 minutes, in which the temperature is raised from a first temperature to a second temperature, with the second temperature being in a range of 850.degree. to 860.degree. C., and the temperature rise in the main sintering period of 20 to 120 minutes being from 3.degree. to 10.degree. C.

    摘要翻译: PCT No.PCT / JP91 / 01423 Sec。 371日期:1992年6月17日 102(e)日期1992年6月17日PCT 1991年10月17日PCT公布。 出版物WO92 / 06923 日本1992年04月30日。一种Bi系钙钛矿超导膜的制造方法,其特征在于,在基板上形成含有Bi,Pb,Sr,Ca,Cu的Bi基材料膜的Pb膜, Bi:Pb:Sr:Ca:Cu的摩尔比为(1.9〜2.1):1.2〜2.2,优选为1.5〜1.8):2:(1.9〜2.2):( 3〜3.5) 在含氧气氛中的基材膜。 烧结步骤包括20〜120分钟的主烧结期间,其中温度从第一温度升至第二温度,第二温度在850℃至860℃的范围内,温度升高 在20〜120分钟的主烧结时间为3〜10℃。