Functional bimorph composite nanotapes and methods of fabrication
    1.
    发明申请
    Functional bimorph composite nanotapes and methods of fabrication 失效
    功能双压电晶片复合纳米管及其制造方法

    公开(公告)号:US20040131537A1

    公开(公告)日:2004-07-08

    申请号:US10642043

    申请日:2003-08-15

    IPC分类号: B32B009/04

    摘要: A two-layer nanotape that includes a nanoribbon substrate and an oxide that is epitaxially deposited on a flat surface of the nanoribbon substrate is described. A method for making the nanotape that includes providing plural substrates and placing the substrates in a quartz tube is also described. The oxide is deposited on the substrate using a pulsed laser ablation deposition process. The nanoribbons can be made from materials such as SnO2, ZnO, MgO, Al2O3, Si, GaN, or CdS. Also, the sintered oxide target can be made from materials such as TiO2, transition metal doped TiO2 (e.g., CO0.05Ti0.95O2), BaTiO3, ZnO, transition metal doped ZnO (e.g., Mn0.1Zn0.9O and Ni0.1Zn0.9O), LaMnO3, BaTiO3, PbTiO3, YBa2Cu3Oz, or SrCu2O2 and other p-type oxides. Additionally, temperature sensitive nanoribbon/metal bilayers and their method of fabrication by thermal evaporation are described. Metals such as Cu, Au, Ti, Al, Pt, Ni and others can be deposited on top of the nanoribbon surface. Such devices bend significantly as a function of temperature and are suitable as, for example, thermally activated nanoscale actuators.

    摘要翻译: 描述了包括纳米薄片基底和外延沉积在纳米薄片的平坦表面上的氧化物的双层纳米线。 还描述了一种制造纳米线的方法,其包括提供多个基板并将基板放置在石英管中。 氧化物使用脉冲激光烧蚀沉积工艺沉积在衬底上。 纳米带可以由诸如SnO 2,ZnO,MgO,Al 2 O 3,Si,GaN或CdS的材料制成。 此外,烧结氧化物靶可以由诸如TiO 2,过渡金属掺杂的TiO 2(例如,CO 0.05 Ti 0.95 O 2),BaTiO 3,ZnO,过渡金属掺杂的ZnO(例如Mn0.1Zn0.9O和Ni0.1Zn0)的材料制成。 9O),LaMnO3,BaTiO3,PbTiO3,YBa2Cu3Oz或SrCu2O2等p型氧化物。 另外,描述了温度敏感的纳米棒/金属双层及其通过热蒸发制造的方法。 诸如Cu,Au,Ti,Al,Pt,Ni等的金属可以沉积在纳米棒表面的顶部。 这样的装置作为温度的函数显着弯曲,并且适合于例如热活化的纳米级致动器。

    Fluidic nanotubes and devices
    2.
    发明申请
    Fluidic nanotubes and devices 有权
    流体纳米管和器件

    公开(公告)号:US20040262636A1

    公开(公告)日:2004-12-30

    申请号:US10822148

    申请日:2004-04-08

    IPC分类号: H01L031/109

    摘要: Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

    摘要翻译: 描述了流体性纳米管器件,其中亲水性,非碳纳米管的端部流体耦合到储存器。 源极和漏极触点连接到纳米管的相对端,或者在靠近纳米管开口的每个储存器内。 可以通过测量电流(源 - 漏,离子或组合)来感测分子种类的通过。 管内部可以通过结合结合分子来官能化,使得可以通过检测电流变化来感测不同的分子种类。 纳米管可以是形成管状晶体管的半导体。 栅极电极可以连接在源极和漏极之间,以控制电流和离子流。 作为示例,描述了集成MEMs开关的电泳阵列实施例。 描述了各种应用,例如:纳米孔,纳米毛细管装置,纳米电泳,DNA序列检测器,免疫传感器,热电装置,光子器件,纳米流体生物分离器,成像装置等。

    Sacrificial template method of fabricating a nanotube
    3.
    发明申请
    Sacrificial template method of fabricating a nanotube 失效
    制作纳米管的牺牲模板法

    公开(公告)号:US20040175844A1

    公开(公告)日:2004-09-09

    申请号:US10731745

    申请日:2003-12-08

    IPC分类号: H01L021/00

    摘要: Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar nullepitaxial-castingnull approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors. Furthermore, the fabrication of multi-sheath nanotubes are described as well as nanotubes having multiple longitudinal segments.

    摘要翻译: 描述了制造均匀纳米管的方法,其中纳米管在纳米线模板上合成为鞘,例如使用化学气相沉积工艺。 例如,单晶氧化锌(ZnO)纳米线被用作在其上外延生长氮化镓(GaN)的模板。 然后去除ZnO模板,例如通过热还原和蒸发。 完成的单晶GaN纳米管的内径优选为30nm至200nm,壁厚为5至50nm。 透射电子显微镜研究表明,所得纳米管是具有纤锌矿结构的单晶,沿着<001>方向取向。 本发明例示了具有非层状晶体结构的材料的单晶纳米管。 可以使用类似的“外延铸造”方法来生产其他固体材料和半导体的阵列和单晶纳米管。 此外,还描述了多皮纳米管的制造以及具有多个纵向段的纳米管。