公开(公告)号：US08367548B2

公开(公告)日：2013-02-05

申请号：US12035373

申请日：2008-02-21

申请人： Vladimir Machkaoutsan ,  Ernst H. A. Granneman

发明人： Vladimir Machkaoutsan ,  Ernst H. A. Granneman

IPC分类号： H01L21/44

CPC分类号： H01L21/28518

摘要： Highly thermally stable metal silicides and methods utilizing the metal silicides in semiconductor processing are provided. The metal silicides are preferably nickel silicides formed by the reaction of nickel with substitutionally carbon-doped single crystalline silicon which has about 2 atomic % or more substitutional carbon. Unexpectedly, the metal silicides are stable to temperatures of about 900° C. and higher and their sheet resistances are substantially unaffected by exposure to high temperatures. The metal silicides are compatible with subsequent high temperature processing steps, including reflow anneals of BPSG.

摘要翻译： 提供了高度热稳定的金属硅化物和在半导体加工中利用金属硅化物的方法。 金属硅化物优选通过镍与具有约2原子％或更多的取代碳的替代碳掺杂单晶硅的反应形成的硅化镍。 出乎意料地，金属硅化物在约900℃和更高的温度下是稳定的，并且它们的薄层电阻基本上不受暴露于高温的影响。 金属硅化物与随后的高温处理步骤兼容，包括BPSG的回流退火。

公开(公告)号：US07427329B2

公开(公告)日：2008-09-23

申请号：US10410699

申请日：2003-04-08

申请人： Vladimir Kuznetsov ,  Ernst H. A. Granneman

发明人： Vladimir Kuznetsov ,  Ernst H. A. Granneman

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： C23C16/4583 ,  C23C16/46 ,  C23C16/52 ,  C30B33/02 ,  H01L21/67248

摘要： A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber during processing. Streams of gas may lift the substrate from the support structure so that the substrate floats. A plurality of heating elements is associated with at least one of the upper part and the bottom part and are arranged to define heating zones. A controller controls the heating elements individually so that each heating zone is configured to have a predetermined temperature determined by the controller. The heating zones provide for a non-uniform heating laterally across the substrate.

摘要翻译： 一种用于热处理在衬底封闭结构内具有处理室的衬底的反应器，以及支撑结构，其被配置为在处理期间将衬底定位在处理室内的上部和底部之间的预定间隔处。 气流可以从支撑结构提起衬底，使得衬底漂浮。 多个加热元件与上部和底部中的至少一个相关联并且被布置成限定加热区。 控制器分别控制加热元件，使得每个加热区被配置成具有由控制器确定的预定温度。 加热区域横跨衬底提供不均匀的加热。

公开(公告)号：US06727169B1

公开(公告)日：2004-04-27

申请号：US09644416

申请日：2000-08-23

申请人： Ivo Raaijmakers ,  Suvi P. Haukka ,  Ville A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H. A. Granneman

发明人： Ivo Raaijmakers ,  Suvi P. Haukka ,  Ville A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H. A. Granneman

IPC分类号： H01L214763

CPC分类号： C23C16/45525 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/45534 ,  C23C16/45536 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.

摘要翻译： 提供了集成电路中双镶嵌结构的保形衬里的方法和结构。 沟槽和接触通孔形成在绝缘层中。 沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。 示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。 自身端接的金属层因此与氮气反应。 接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

公开(公告)号：US07102235B2

公开(公告)日：2006-09-05

申请号：US10737315

申请日：2003-12-15

申请人： Ivo Raaijmakers ,  Suvi P. Haukka ,  Yille A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H. A. Granneman

发明人： Ivo Raaijmakers ,  Suvi P. Haukka ,  Yille A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H. A. Granneman

IPC分类号： H01L23/52

CPC分类号： C23C16/45525 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/45534 ,  C23C16/45536 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.

摘要翻译： 提供了集成电路中双镶嵌结构的保形衬里的方法和结构。 沟槽和接触通孔形成在绝缘层中。 沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。 示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。 自身端接的金属层因此与氮气反应。 接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

公开(公告)号：US09243330B2

公开(公告)日：2016-01-26

申请号：US12993562

申请日：2009-05-20

申请人： Ernst H. A. Granneman ,  Sebastiaan E. van Nooten

发明人： Ernst H. A. Granneman ,  Sebastiaan E. van Nooten

IPC分类号： C30B25/14 ,  C30B29/20 ,  C30B25/00 ,  C23C16/455 ,  C23C16/54 ,  H01L21/677 ,  C30B35/00

CPC分类号： C23C16/45544 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/54 ,  C30B25/14 ,  C30B29/20 ,  C30B35/005 ,  H01L21/67784

摘要： Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a process tunnel, extending in a transport direction and bounded by at least a first and a second wall. The walls are mutually parallel and allow a flat substrate to be accommodated there between. The apparatus further includes a transport system for moving a train of substrates or a continuous substrate in tape form, through the tunnel. At least the first wall of the process tunnel is provided with a plurality of gas injection channels that, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a tunnel segment that—in use—comprises successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively.

摘要翻译： 用于以连续方式沉积膜的原子层沉积装置。 该装置包括一个在输送方向上延伸并由至少第一和第二壁限定的加工隧道。 这些壁是相互平行的，并且允许在其间容纳平坦的基底。 该装置还包括用于通过隧道移动一列衬底或带状连续衬底的传送系统。 至少过程隧道的第一壁设置有多个气体注入通道，从输送方向看，连续连接到第一前体气体源，吹扫气体源，第二前体气体源和吹扫气体 源，以便产生在使用中的隧道段，其包括分别包含第一前体气体，吹扫气体，第二前体气体和吹扫气体的连续区域。

公开(公告)号：US09127340B2

公开(公告)日：2015-09-08

申请号：US12701422

申请日：2010-02-05

申请人： Jerome Noiray ,  Ernst H. A. Granneman

发明人： Jerome Noiray ,  Ernst H. A. Granneman

IPC分类号： B05D5/12 ,  C23C8/04 ,  C23C8/10 ,  H01L21/02 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316

CPC分类号： C23C8/04 ,  C23C8/10 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/28247 ,  H01L21/3144 ,  H01L21/31662

摘要： Silicon is selectively oxidized relative to a metal-containing material in a partially-fabricated integrated circuit. In some embodiments, the silicon and metal-containing materials are exposed portions of a partially-fabricated integrated circuit and may form part of, e.g., a transistor. The silicon and metal-containing material are oxidized in an atmosphere containing an oxidant and a reducing agent. In some embodiments, the reducing agent is present at a concentration of about 10 vol % or less.

摘要翻译： 相对于部分制造的集成电路中的含金属材料，硅被选择性地氧化。 在一些实施例中，硅和含金属的材料是部分制造的集成电路的暴露部分，并且可以形成例如晶体管的一部分。 硅和含金属的材料在含氧化剂和还原剂的气氛中被氧化。 在一些实施方案中，还原剂以约10vol％或更低的浓度存在。

公开(公告)号：US08889565B2

公开(公告)日：2014-11-18

申请号：US12701407

申请日：2010-02-05

申请人： Jerome Noiray ,  Ernst H. A. Granneman

发明人： Jerome Noiray ,  Ernst H. A. Granneman

IPC分类号： H01L21/316 ,  H01L21/3105 ,  H01L21/28 ,  H01L21/321

CPC分类号： H01L21/28176 ,  H01L21/28211 ,  H01L21/28247 ,  H01L21/3105 ,  H01L21/321

摘要： Oxygen is selectively removed from metal-containing materials in a partially-fabricated integrated circuit. In some embodiments, the partially-fabricated integrated circuit has exposed silicon and metal-containing materials, e.g., as part of a transistor. The silicon and metal-containing material are oxidized. Oxygen is subsequently removed from the metal-containing material by an anneal in an atmosphere containing a reducing agent. Advantageously, the silicon oxide formed by the silicon oxidation is maintained while oxygen is removed from the metal-containing material, thereby leaving a high quality metal-containing material along with silicon oxide.

摘要翻译： 在部分制造的集成电路中，从含金属材料中选择性地除去氧气。 在一些实施例中，部分制造的集成电路具有暴露的硅和含金属的材料，例如作为晶体管的一部分。 含硅和金属的材料被氧化。 随后在含还原剂的气氛中通过退火将含氧物质从含金属材料中除去。 有利地，通过硅氧化形成的氧化硅被保持，同时从含金属的材料中除去氧，从而与氧化硅一起留下高质量的含金属材料。

公开(公告)号：US08034410B2

公开(公告)日：2011-10-11

申请号：US11779033

申请日：2007-07-17

申请人： Vladimir Kuznetsov ,  Ernst H. A. Granneman

发明人： Vladimir Kuznetsov ,  Ernst H. A. Granneman

IPC分类号： C23C16/00

CPC分类号： C23C16/4404

摘要： Inserts are used to line openings in parts that form a semiconductor processing reactor. In some embodiments, the reactor parts delimit a reaction chamber. The reactor parts may be formed of graphite. A layer of silicon carbide is deposited on surfaces of the openings in the reactor parts and the inserts are placed in the openings. The inserts are provided with a hole, which can accept another reactor part such as a thermocouple. The insert protects the walls of the opening from abrasion caused by insertion of the other reactor part into the opening.

摘要翻译： 插入件用于在形成半导体处理反应器的部分中对开口进行排列。 在一些实施方案中，反应器部分限定反应室。 反应器部件可以由石墨形成。 在反应器部件的开口的表面上沉积一层碳化硅，并且将插入件放置在开口中。 插入件设置有孔，其可接受另一个反应器部件，例如热电偶。 插入物保护开口的壁免受另一反应器部件插入开口所引起的磨损。

公开(公告)号：US20110124199A1

公开(公告)日：2011-05-26

申请号：US12993562

申请日：2009-05-20

申请人： Ernst H. A. Granneman ,  Sebastiaan E. van Nooten

发明人： Ernst H. A. Granneman ,  Sebastiaan E. van Nooten

IPC分类号： H01L21/18 ,  C23C16/455 ,  C23C16/458

CPC分类号： C23C16/45544 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/54 ,  C30B25/14 ,  C30B29/20 ,  C30B35/005 ,  H01L21/67784

摘要： Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a process tunnel, extending in a transport direction and bounded by at least a first and a second wall. The walls are mutually parallel and allow a flat substrate to be accommodated there between. The apparatus further includes a transport system for moving a train of substrates or a continuous substrate in tape form, through the tunnel. At least the first wall of the process tunnel is provided with a plurality of gas injection channels that, viewed in the transport direction, are connected successively to a first precursor gas source, a purgegas source, a second precursor gas source and a purge gas source respectively, so as to create a tunnel segment that—in use—comprises successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively.

摘要翻译： 用于以连续方式沉积膜的原子层沉积装置。 该装置包括一个在输送方向上延伸并由至少第一和第二壁限定的加工隧道。 这些壁是相互平行的，并且允许在其间容纳平坦的基底。 该装置还包括用于通过隧道移动一列衬底或带状连续衬底的传送系统。 至少过程隧道的第一壁设置有多个气体注入通道，从输送方向看，连续连接到第一前体气体源，净化气体源，第二前体气体源和吹扫气体源 以便产生在使用中的隧道段，其包括分别包含第一前体气体，吹扫气体，第二前体气体和吹扫气体的连续区域。

公开(公告)号：US06780704B1

公开(公告)日：2004-08-24

申请号：US09452844

申请日：1999-12-03

申请人： Ivo Raaijmakers ,  Suvi P. Haukka ,  Ernst H. A. Granneman

发明人： Ivo Raaijmakers ,  Suvi P. Haukka ,  Ernst H. A. Granneman

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L21/02159 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/31604 ,  H01L21/3162 ,  H01L21/31691 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/84 ,  Y10T428/265

摘要： Method and structures are provided for conformal capacitor dielectrics over textured silicon electrodes for integrated memory cells. Capacitor structures and first electrodes or plates are formed above or within semiconductor substrates. The first electrodes include hemispherical grain (HSG) silicon for increasing the capacitor plate surface area. The HSG topography is then exposed to alternating chemistries to form monolayers of a desired dielectric material. Exemplary process flows include alternately pulsed metal organic and oxygen source gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with oxygen. Near perfect step coverage allows minimal thickness for a capacitor dielectric, given leakage concerns for particular materials, thereby maximizing the capacitance for the memory cell and increasing cell reliability for a given memory cell design. Alternately pulsed chemistries are also provided for depositing top electrode materials with continuous coverage of capacitor dielectric, realizing the full capacitance benefits of the underlying textured morphology.