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    Light responsive semiconductor device
    1.
    发明授权
    Light responsive semiconductor device 失效
    光反应半导体器件

    公开(公告)号：US5144397A

    公开(公告)日：1992-09-01

    申请号：US487292

    申请日：1990-03-02

    申请人： Yasunori Tokuda ,  Noriaki Tsukada

    发明人： Yasunori Tokuda ,  Noriaki Tsukada

    IPC分类号： G01J1/02 ,  G02F1/015 ,  G02F1/017 ,  G02F3/02 ,  H01L31/0352 ,  H01L31/10

    CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F3/028 ,  H01L31/035236 ,  G02F2001/0157

    摘要： A light responsive semiconductor device includes a p-i-n structure incorporating a multiple quantum well structure buried within the intrinsic layer and an external resistance and voltage source serially connected across the device for adjusting a critical wavelength at which the light absorption characteristic of the device dramatically changes. By properly choosing the resistance and/or voltage, the photocurrent changes discontinuously at the critical wavelength and the photocurrent exhibits a hysteresis characteristic. A light responsive structure may include individual, serially aligned p-i-n devices or an integrated, unitary semiconductor body inculding a plurality of p-i-n devices.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20090142871A1

    公开(公告)日：2009-06-04

    申请号：US12323634

    申请日：2008-11-26

    申请人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

    发明人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

    IPC分类号： H01L21/20 ,  H01L33/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/325 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063

    摘要： A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.

    摘要翻译： 半导体器件的制造方法为半导体器件提供了氮化镓基半导体结构，其允许长期稳定的操作而不会降低器件性能。 在表面以外的表面上形成绝缘膜之后，供给诸如O 2，O 3，NO，N 2 O或NO 2的含氧气体以从表面氧化p型GaN接触层，由此 在p型GaN接触层的表面上形成氧化膜。 然后，通过在氧化物膜和绝缘膜上的蒸发或溅射形成与p型GaN接触层建立接触的p型电极。 随后在含有含氮气体如N 2或NH 3或惰性气体例如Ar或He的气氛中，在400-700℃的温度下进行热处理。

    Semiconductor device and manufacturing method thereof
    6.
    发明授权
    Semiconductor device and manufacturing method thereof 失效
    半导体装置及其制造方法

    公开(公告)号：US06518635B1

    公开(公告)日：2003-02-11

    申请号：US09610862

    申请日：2000-07-06

    申请人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Yuji Abe ,  Yasunori Tokuda

    发明人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Yuji Abe ,  Yasunori Tokuda

    IPC分类号： H01L27108

    CPC分类号： H01L29/517 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/28167

    摘要： A major object of the present invention is to provide an improved semiconductor device so as to be able to reduce gate electric field concentration at a channel edge, suppress decrease in the threshold during MOSFET operation and reduce the leakage current. A gate insulation film is formed on a semiconductor substrate. A gate electrode is formed on the semiconductor substrate with the gate insulation film therebetween. The dielectric constant of the gate insulation film is not uniform in the surface.

    摘要翻译： 本发明的主要目的是提供一种改进的半导体器件，以便能够降低沟道边缘处的栅极电场集中，抑制MOSFET操作期间阈值的降低并减少漏电流。 在半导体衬底上形成栅极绝缘膜。 栅电极形成在半导体衬底上，其间具有栅极绝缘膜。 栅极绝缘膜的介电常数在表面上不均匀。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    9.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20090170304A1

    公开(公告)日：2009-07-02

    申请号：US12337878

    申请日：2008-12-18

    申请人： Yoichiro Tarui ,  Kenichi Ohtsuka ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

    发明人： Yoichiro Tarui ,  Kenichi Ohtsuka ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

    IPC分类号： H01L21/441

    CPC分类号： H01L21/28575 ,  H01L29/2003 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40

    摘要： A method of manufacturing a semiconductor device is provided, which can reduce the contact resistance of an ohmic electrode to a p-type nitride semiconductor layer and can achieve long-term stable operation. In forming, in an electrode forming step, a p-type ohmic electrode of a metal film by successive lamination of a Pd film which is a first p-type ohmic electrode and a Ta film which is a second p-type ohmic electrode on a p-type GaN contact layer, the metal film is formed to include an oxygen atom. In the presence of an oxygen atom in the metal film, then in a heat-treatment step, the p-type ohmic electrode of the metal film is heat-treated in an atmosphere that contains no oxygen atom-containing gas.

    摘要翻译： 提供一种制造半导体器件的方法，其可以将欧姆电极的接触电阻降低到p型氮化物半导体层，并且可以实现长期稳定的操作。 在电极形成步骤中，通过在第一p型欧姆电极上连续层压作为第一p型欧姆电极的Pd膜和作为第二p型欧姆电极的Ta膜，在电极形成步骤中形成金属膜的p型欧姆电极 p型GaN接触层，金属膜形成为包含氧原子。 在金属膜中存在氧原子的情况下，在热处理工序中，金属膜的p型欧姆电极在不含氧原子气体的气氛中进行热处理。

    Method of making field effect transistor in which the increase of parasitic capacitance is restrained by scale reduction
    10.
    发明授权
    Method of making field effect transistor in which the increase of parasitic capacitance is restrained by scale reduction 失效
    制造场效应晶体管的方法，其中寄生电容的增加受缩小的限制

    公开(公告)号：US06624034B2

    公开(公告)日：2003-09-23

    申请号：US10173835

    申请日：2002-06-19

    申请人： Yuji Abe ,  Naruhisa Miura ,  Kohei Sugihara ,  Toshiyuki Oishi ,  Yasunori Tokuda

    发明人： Yuji Abe ,  Naruhisa Miura ,  Kohei Sugihara ,  Toshiyuki Oishi ,  Yasunori Tokuda

    IPC分类号： H01L21336

    CPC分类号： H01L29/6653 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/66628

    摘要： A method of producing a semiconductor device includes forming a gate electrode on a channel region on a surface of a semiconductor region of a semiconductor substrate, the channel region having a depth in the semiconductor substrate; forming a first pair of side wall spacers on opposite sides of the gate electrode; forming elevated semiconductor layers, each elevated semiconductor layer being elevated relative to the channel region, on regions outside of the pair of side wall spacers and in which source and drain regions of a first conductivity type are to be formed; removing the pair of first side wall spacers; and forming a pair of pocket injection regions of a second conductivity type by introducing, after the side wall spacers are removed, a dopant impurity producing the second conductivity type deeper in the semiconductor substrate than a region where the side wall spacers were formed, the pair of pocket injection regions respectively covering only a neighborhood of respective side surface parts of the channel region, where the source and drain regions are to be formed, forming respective pn junctions only between the neighborhood of the side surface parts and the pocket injection regions.

    摘要翻译： 一种制造半导体器件的方法包括在半导体衬底的半导体区域的表面上的沟道区上形成栅电极，所述沟道区在半导体衬底中具有深度; 在栅电极的相对侧上形成第一对侧壁间隔物; 形成升高的半导体层，每个升高的半导体层相对于沟道区域升高，在一对侧壁间隔物外侧的区域上，并且将形成第一导电类型的源极和漏极区域; 移除所述一对第一侧壁间隔件; 以及形成第二导电类型的一对口袋注入区域，在除去侧壁间隔物之后，在半导体衬底中产生比形成侧壁间隔物的区域更深的第二导电类型的掺杂剂杂质，该对 分别仅覆盖要形成源极和漏极区的沟道区的各个侧表面部分的附近的口腔注入区域，仅在侧表面部分的附近和口袋注入区域之间形成相应的pn结。