摘要:
A semiconductor device includes a semiconductor chip, a plurality of bonding pads which are formed on a main surface of the semiconductor chip and include first power source bonding pads, second power source bonding pads and a plurality of signal bonding pads, a plurality of leads which are arranged around the semiconductor chip and include first power source leads and a plurality of signal leads, a plurality of bonding wires which include first bonding wires for connecting the first power source bonding pads with the first power source leads, second bonding wires for connecting the first bonding pads with second bonding pads and third bonding wires for connecting the plurality of signal bonding pads with the plurality of signal leads, and a sealing body which seals the semiconductor chip, the plurality of bonding wires and some of the plurality of leads.
摘要:
A semiconductor device includes a semiconductor chip, a plurality of bonding pads which are formed on a main surface of the semiconductor chip and include first power source bonding pads, second power source bonding pads and a plurality of signal bonding pads, a plurality of leads which are arranged around the semiconductor chip and include first power source leads and a plurality of signal leads, a plurality of bonding wires which include first bonding wires for connecting the first power source bonding pads with the first power source leads, second bonding wires for connecting the first bonding pads with second bonding pads and third bonding wires for connecting the plurality of signal bonding pads with the plurality of signal leads, and a sealing body which seals the semiconductor chip, the plurality of bonding wires and some of the plurality of leads.
摘要:
A semiconductor device includes a semiconductor chip, a plurality of bonding pads which are formed on a main surface of the semiconductor chip and include first power source bonding pads, second power source bonding pads and a plurality of signal bonding pads, a plurality of leads which are arranged around the semiconductor chip and include first power source leads and a plurality of signal leads, a plurality of bonding wires which include first bonding wires for connecting the first power source bonding pads with the first power source leads, second bonding wires for connecting the first bonding pads with second bonding pads and third bonding wires for connecting the plurality of signal bonding pads with the plurality of signal leads, and a sealing body which seals the semiconductor chip, the plurality of bonding wires and some of the plurality of leads.
摘要:
There are constituted by a tab (1b) on which a semiconductor chip (2) is mounted, a sealing portion (3) formed by resin-sealing the semiconductor chip (2), a plurality of leads (1a) each having a mounted surface (1d) exposed to a peripheral portion of a rear surface (3a) of the sealing portion (3) and a sealing-portion forming surface (1g) disposed on an opposite side thereto, and a wire (4) for connecting a pad (2a) of the semiconductor chip (2) and a lead (1a), wherein the length (M) between inner ends (1h) of the sealing-portion forming surfaces (1g) of the leads (1a) disposed so as to oppose to each other is formed to be larger than the length (L) between inner ends (1h) of the mounted surfaces (1d). Thereby, a chip mounting region surrounded by the inner end (1h) of the sealing-portion forming surface (1g) of each lead (1a) can be expanded and the size of the mountable chip is increased.
摘要:
A semiconductor device is disclosed which includes a tab (5) for use in supporting a semiconductor chip (8), a seal section (12) as formed by sealing the semiconductor chip (8) with a resin material, more than one tab suspension lead (4) for support of the tab (5), a plurality of electrical leads (2) which have a to-be-connected portion as exposed to outer periphery on the back surface of the seal section (12) and a thickness reduced portion as formed to be thinner than said to-be-connected portion and which are provided with an inner groove (2e) and outer groove (2f) in a wire bonding surface (2d) as disposed within the seal section (12) of said to-be-connected portion, and wires (10) for electrical connection between the leads (2) and pads (7) of the semiconductor chip (8), wherein said thickness reduced portion of the leads (2) is covered by or coated with a sealing resin material while causing the wires (10) to be contacted with said to-be-connected portion at specified part lying midway between the outer groove (2f) and inner groove (2e) to thereby permit said thickness reduced portion of leads (2) and the outer groove (2f) plus the inner groove (2e) to prevent occurrence of any accidental lead drop-down detachment.
摘要:
A non-leaded resin-sealed semiconductor device is manufactured by the steps of providing a conductive flat substrate (metal plate) of copper plate or the like, fixing semiconductor elements respectively to predetermined positions on the principal surface of the substrate by an insulating adhesive, electrically connecting electrodes on the surfaces of the semiconductor elements with predetermined partition parts of the substrate separate from the semiconductor elements by conductive wires, forming an insulating resin layer on the principal surface of the substrate to cover the semiconductor elements and wires, selectively removing the substrate from the rear of said substrate to form electrically independent partition parts whereof at least some are external electrode terminals, and selectively removing said resin layer to fragment the device into regions containing the semiconductor elements and the plural partition parts around the semiconductor elements. Thus, there is provided a compact non-leaded semiconductor device having a large number of electrode terminals.
摘要:
A semiconductor device which permits reduction in the number of pins and in size thereof is provided. The semiconductor device comprises a sealing body formed of an insulating resin, the sealing body having an upper surface, a lower surface opposite to the upper surface, and side faces which connect the upper and lower surfaces with each other; an electrically conductive tab sealed within the sealing body; tab suspending leads contiguous to the tab and partially exposed to the lower surface and the side faces of the sealing body; a semiconductor chip fixed to a lower surface of the tab; a plurality of electrically conductive leads, the electrically conductive leads each having an inner end portion positioned within the sealing body, an outer end portion exposed to the lower surface and a side face of the sealing body, and a projecting portion projecting into the sealing body from a side face of each of the electrically conductive leads; a projecting portion projecting from a side face of each of the tab suspending leads and positioned within the sealing body; and electrically conductive wires positioned within the sealing body and connecting electrodes formed on a lower surface of the semiconductor chip with the projecting portions of the electrically conductive leads and the tab suspending leads.
摘要:
A semiconductor device which permits reduction in the number of pins and in size thereof is provided. The semiconductor device comprises a sealing body formed of an insulating resin, the sealing body having an upper surface, a lower surface opposite to the upper surface, and side faces which connect the upper and lower surfaces with each other; an electrically conductive tab sealed within the sealing body; tab suspending leads contiguous to the tab and partially exposed to the lower surface and the side faces of the sealing body; a semiconductor chip fixed to a lower surface of the tab; a plurality of electrically conductive leads, the electrically conductive leads each having an inner end portion positioned within the sealing body, an outer end portion exposed to the lower surface and a side face of the sealing body, and a projecting portion projecting into the sealing body from a side face of each of the electrically conductive leads; a projecting portion projecting from a side face of each of the tab suspending leads and positioned within the sealing body; and electrically conductive wires positioned within the sealing body and connecting electrodes formed on a lower surface of the semiconductor chip with the projecting portions of the electrically conductive leads and the tab suspending leads.
摘要:
A first solder resist section and a second solder resist section are formed over an upper surface of a wiring board. A semiconductor chip is bonded onto the first solder resist section via an adhesive interposed therebetween. Electrodes of the semiconductor chip are respectively electrically connected to connecting terminals exposed through openings of the second solder resist section via bonding wires. An encapsulating resin is formed over the upper surface of the wiring board so as to cover the semiconductor chip and the bonding wires. A plane dimension of the first solder resist section is smaller than that of the semiconductor chip, and the encapsulating resin is filled even below an outer peripheral portion of a back surface of the semiconductor chip.
摘要:
The semiconductor device includes tub 5 that is smaller than semiconductor chip 8, and which supports semiconductor chip 8; molded section 12 that is formed by resin-molding around semiconductor chip 8; suspension leads 4, including supporting portions 4a that support tub 5 and exposed portions 4b that are connected to supporting portions 4a and are exposed on back surface 12a of molded section 12, and are elevation processed in supporting portions 4a; leads 2 that are located around tub 5; and wires 10 that connect pads 7 of semiconductor chip 8 with the corresponding leads 2; wherein the thickness of tub 5 and supporting portions 4a of suspension leads 4 is less than the thickness of exposed portions 4b, and back surface 8b of semiconductor chip 8 is firmly in contact with molding resin 11.