摘要:
A method for fabricating a circuit device includes preparing an insulation resin sheet for which a first conductive layer and a second conductive layer are adhered to each other by insulation resin, forming through holes in the first conductive layer and the insulation resin at appointed points of the insulation resin sheet, and selectively exposing the rear side of the second conductive layer. A multi-layer connecting means is formed in the through holes and the first conductive layer is electrically connected to the second conductive layer. The method includes etching the first conductive layer to an appointed pattern, forming a first conductive path layer, and adhering and fixing semiconductor elements by electrically insulating the same on the first conductive path layer. The first conductive path layer and the semiconductor elements are overcoated with a sealing resin layer. The second conductive layer is etched to an appointed pattern after etching the entire surface thereof so as to become thin, and forming a second conductive path layer. External electrodes are formed at appointed points of the second conductive path layer.
摘要:
A conductive plated layer 4 is fanned after through holes 21 are formed in the insulation resin 2 by using an insulation resin sheet 1 overcoated on a single side of the conductive layer 3 with insulation resin 2. A multi-layer connection structure can be achieved by the second conductive path layer 6 which is connected, in multi layers, to the first conductive path layer 5 formed by etching the conductive plated layer 4. Further, since semiconductor elements 7 are adhered to and fixed at the overcoating resin 8 that covers the first conductive path layer 5, the first conductive path layer 5 is finely patterned, and routing thereof can be made free. Further, since the second conductive layer 4 that has been fanned to be thick can be thinly etched, the second conductive path layers 6 can be finely patterned.
摘要:
As conductive patterns 11A to 11D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11D is provided, a semiconductor device superior in radiation is provided.
摘要:
The invention is to form plated films on a conductive foil a thigh precision, and simplify a procedure of forming the plated film. A resin film composed of a thermosetting resin is formed on the surface of the conductive foil. The resin film of parts which become bonding pads and die pads is eliminated by a laser etching. A clamper presses of the periphery of the block so as to form hermetically sealed spaces on the block. The interior of the clamper is filled with a plating liquid by means of an injection means and an evacuation means, and subsequently, and Ag plated film is formed by an electroplating method.
摘要:
A method for fabricating a circuit device includes preparing a laminating sheet comprising a conductive film, insulation resin formed on the surface of the conductive film, and a first conductive path layer formed on the surface of the insulation resin. Semiconductor elements are adhered and fixed on the first conductive path layer. A sealing resin is provided as an overcoat to the first conductive path layer and the semiconductor elements. The method includes forming a second conductive path layer by etching the conductive film into a predetermined pattern and forming an external electrode at predetermined points of the second conductive path layer.
摘要:
A method for fabricating a circuit device is provided. An insulation resin sheet having the first conductive layer 3 and the second conductive layer 4 adhered to each other by insulation resin 2 is used, the first conductive path layer 5 is formed by the first conductive layer 3, and semiconductor elements 7 are adhered to and fixed on overcoating resin 8 that covers the first conductive path layer 5, thereby freely routing the first conductive path layer 5 having fine patterns below the semiconductor elements 7. Furthermore, the second conductive layer 4 that has been formed to be thick is removed after a package is sealed with a sealing resin layer 13, and external electrodes 14 are formed in through holes of the insulation resin 2.
摘要:
A circuit device and a method for fabrication the same is provided. An insulation resin sheet in which the first conductive layer 3 and the second conductive layer 4 are adhered to each other by insulation resin 2 is used. The first conductive path layer 5 is formed by the first conductive layer 3, the second conductive path layer 6 is formed by the second conductive layer 4, and both of the conductive path layers are connected by multi-layer connecting means 12. Since a semiconductor element 7 is adhered to and fixed on overcoating resin 8 that covers the first conductive path layer 5, a multi-layer connection structure can be achieved by the first conductive path layer 5 and the second conductive path layer 6. Further, the second conductive layer 4 that is made thick can prevent warping from occurring due to a difference in a thermal expansion coefficient.
摘要:
As conductive patterns 11A to 11D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11D is provided, a semiconductor device superior in radiation is provided.
摘要:
A conductive plated layer 4 is formed after through holes 21 are formed in the insulation resin 2 by using an insulation resin sheet 1 overcoated on a single side of the conductive layer 3 with insulation resin 2. A multi-layer connection structure can be achieved by the second conductive path layer 6 which is connected, in multi layers, to the first conductive path layer 5 formed by etching the conductive plated layer 4. Further, since semiconductor elements 7 are adhered to and fixed at the overcoating resin 8 that covers the first conductive path layer 5, the first conductive path layer 5 is finely patterned, and routing thereof can be made free.
摘要:
A first metal film 14 made of a Cu plated film is formed on a radiation substrate 13A made of Al, and an island 15 exposed from a back surface of a semiconductor device 10 is adhered thereto. At that time, the back surface of the semiconductor device 10 is brought into contact with contact areas, and a first opening portion OP is opened larger than an arranging area of the semiconductor device 10. Accordingly, the cleaning can be executed via the first opening portion OP exposed from peripheries of the semiconductor device 10. In addition, the heat generated from semiconductor elements 16 can be radiated excellently from the island 15 via a second supporting member 13A.