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公开(公告)号:US20110092030A1
公开(公告)日:2011-04-21
申请号:US12970602
申请日:2010-12-16
申请人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J. L. de Jong , Deepak C. Sekar , Paul Lim
发明人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J. L. de Jong , Deepak C. Sekar , Paul Lim
IPC分类号: H01L21/822
CPC分类号: H01L27/1266 , G06F17/5072 , H01L21/6835 , H01L21/76254 , H01L21/8221 , H01L21/823828 , H01L21/84 , H01L23/3677 , H01L23/481 , H01L23/5252 , H01L23/544 , H01L24/05 , H01L24/13 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/10802 , H01L27/10873 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11206 , H01L27/11526 , H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L27/1214 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7848 , H01L29/7881 , H01L29/792 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/0401 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01051 , H01L2924/01066 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/1301 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00015 , H01L2924/00 , H01L2924/3512 , H01L2224/80001 , H01L2924/00012
摘要: A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the first metal layer includes aluminum or copper, and wherein the second layer is less than one micron in thickness and includes logic cells.
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公开(公告)号:US09711407B2
公开(公告)日:2017-07-18
申请号:US12970602
申请日:2010-12-16
申请人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J. L. de Jong , Deepak C. Sekar , Paul Lim
发明人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J. L. de Jong , Deepak C. Sekar , Paul Lim
IPC分类号: H01L21/822 , H01L21/84 , H01L21/683 , H01L23/00 , H01L23/525 , H01L23/544 , H01L25/065 , H01L27/02 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L27/118 , H01L29/66 , H01L29/423 , H01L29/78 , G06F17/50 , H01L21/762 , H01L21/8238 , H01L25/00 , H01L27/06 , H01L27/11 , H01L27/112 , H01L27/11526 , H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , H01L27/12 , H01L29/788 , H01L29/792 , H01L23/367 , H01L23/48
CPC分类号: H01L27/1266 , G06F17/5072 , H01L21/6835 , H01L21/76254 , H01L21/8221 , H01L21/823828 , H01L21/84 , H01L23/3677 , H01L23/481 , H01L23/5252 , H01L23/544 , H01L24/05 , H01L24/13 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/10802 , H01L27/10873 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11206 , H01L27/11526 , H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L27/1214 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7848 , H01L29/7881 , H01L29/792 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/0401 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01051 , H01L2924/01066 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/1301 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00015 , H01L2924/00 , H01L2924/3512 , H01L2224/80001 , H01L2924/00012
摘要: A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the first metal layer includes aluminum or copper, and wherein the second layer is less than one micron in thickness and includes logic cells.
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公开(公告)号:US20110108888A1
公开(公告)日:2011-05-12
申请号:US12949617
申请日:2010-11-18
IPC分类号: H01L27/118
CPC分类号: H01L21/8221 , H01L21/76254 , H01L21/84 , H01L23/481 , H01L23/544 , H01L27/0207 , H01L27/0688 , H01L27/105 , H01L27/10876 , H01L27/10879 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11521 , H01L27/11551 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/66795 , H01L29/78 , H01L2223/54426 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00011 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2224/80001 , H01L2924/00012
摘要: A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the first metal layer includes aluminum or copper, and wherein the second layer is less than one micron in thickness and includes logic cells.
摘要翻译: 半导体器件包括包括第一晶体管的第一单结晶层和形成第一晶体管之间的连接的至少一部分的第一金属层; 以及包括第二晶体管的第二层,所述第二晶体管包括单晶材料,所述第二层覆盖所述第一金属层,其中所述第一金属层包括铝或铜,并且其中所述第二层的厚度小于1微米,并且包括 逻辑单元。
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公开(公告)号:US20100295136A1
公开(公告)日:2010-11-25
申请号:US12792673
申请日:2010-06-02
IPC分类号: H01L27/08
CPC分类号: H01L21/76254 , H01L21/8221 , H01L21/84 , H01L23/36 , H01L23/481 , H01L24/48 , H01L25/0657 , H01L27/0688 , H01L27/092 , H01L27/105 , H01L27/11 , H01L27/1104 , H01L2224/32145 , H01L2224/48091 , H01L2224/73204 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/01066 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15174 , H01L2924/181 , H01L2924/3011 , H03K19/177 , H03K19/17704 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor device comprising transistors formed on crystallized semiconductor base layer and metal layer for the transistors interconnections and insulation layer. The advantage of this approach is reduction of the over all metal length used to interconnect the various transistors.
摘要翻译: 一种用于制造利用层转移的三维半导体器件的方法以及用于在预制半导体器件的顶部形成晶体管的步骤,所述预制半导体器件包括形成在晶体化半导体基底层上的晶体管和用于晶体管互连和绝缘层的金属层。 这种方法的优点是减少用于互连各种晶体管的所有金属长度。
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公开(公告)号:US08405420B2
公开(公告)日:2013-03-26
申请号:US12859665
申请日:2010-08-19
IPC分类号: H01L25/00
CPC分类号: H01L21/8221 , G03F9/7076 , G03F9/7084 , H01L21/76254 , H01L21/84 , H01L23/481 , H01L23/544 , H01L27/0207 , H01L27/0688 , H01L27/105 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11517 , H01L27/11551 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/78 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/73265 , H01L2924/00011 , H01L2924/01322 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/15311 , H01L2924/3011 , H01L2924/00 , H01L2224/80001
摘要: A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.
摘要翻译: 系统包括半导体器件。 半导体器件包括第一单晶硅层,其包括第一晶体管,第一对准标记和覆盖在第一单晶硅层上的至少一个金属层,其中所述至少一个金属层比其它材料包括铜或铝; 以及覆盖所述至少一个金属层的第二单晶硅层。 第二单晶硅层包括以基本平行的带布置的多个第二晶体管。 多个频带中的每一个包括沿着重复图案的轴的第二晶体管的一部分。
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公开(公告)号:US20100291749A1
公开(公告)日:2010-11-18
申请号:US12847911
申请日:2010-07-30
IPC分类号: H01L21/77 , H01L21/027
CPC分类号: G11C17/14 , H01L21/76254 , H01L21/8221 , H01L21/84 , H01L23/36 , H01L23/481 , H01L23/5252 , H01L23/544 , H01L24/45 , H01L24/48 , H01L25/0657 , H01L25/18 , H01L27/0207 , H01L27/0688 , H01L27/0694 , H01L27/092 , H01L27/105 , H01L27/10873 , H01L27/10876 , H01L27/10897 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/112 , H01L27/11206 , H01L27/11803 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2224/16145 , H01L2224/32145 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/06589 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/01066 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12036 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H03K17/687 , H03K19/0948 , H03K19/17704 , H03K19/17756 , H03K19/17764 , H03K19/17796 , H01L2924/00 , H01L2224/80001 , H01L2224/05599 , H01L2924/00012
摘要: A method of manufacturing a semiconductor wafer, the method comprising: providing a base wafer comprising a semiconductor substrate, metal layers and first alignment marks; transferring a monocrystalline layer on top of said metal layers, wherein said monocrystalline layer comprises second alignment marks; and performing a lithography using an alignment based on a misalignment between said first alignment marks and said second alignment marks.
摘要翻译: 一种制造半导体晶片的方法,所述方法包括:提供包括半导体衬底,金属层和第一对准标记的基底晶片; 在所述金属层的顶部上转移单晶层,其中所述单晶层包括第二对准标记; 以及使用基于所述第一对准标记和所述第二对准标记之间的未对准的对准来执行光刻。
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公开(公告)号:US20100289064A1
公开(公告)日:2010-11-18
申请号:US12849272
申请日:2010-08-03
IPC分类号: H01L23/522
CPC分类号: H01L27/08 , H01L21/26506 , H01L21/26513 , H01L21/76254 , H01L21/8221 , H01L21/84 , H01L23/481 , H01L23/544 , H01L27/0207 , H01L27/0688 , H01L27/105 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2924/00011 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/15311 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2224/80001
摘要: A semiconductor device comprising: a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layers; wherein the second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands wherein each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.
摘要翻译: 一种半导体器件,包括:包含第一晶体管,第一对准标记和覆盖在第一单晶硅层上的至少一个金属层的第一单晶硅层,其中所述至少一个金属层比其它材料包括铜或铝; 以及覆盖所述至少一个金属层的第二单晶硅层; 其中所述第二单晶硅层包括以基本上平行的带布置的多个第二晶体管,其中所述多个所述带中的每一个包括沿重复图案的轴的所述第二晶体管的一部分。
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公开(公告)号:US20110049577A1
公开(公告)日:2011-03-03
申请号:US12859665
申请日:2010-08-19
IPC分类号: H01L23/52
CPC分类号: H01L21/8221 , G03F9/7076 , G03F9/7084 , H01L21/76254 , H01L21/84 , H01L23/481 , H01L23/544 , H01L27/0207 , H01L27/0688 , H01L27/105 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11517 , H01L27/11551 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/78 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/73265 , H01L2924/00011 , H01L2924/01322 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/15311 , H01L2924/3011 , H01L2924/00 , H01L2224/80001
摘要: A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.
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公开(公告)号:US20110199116A1
公开(公告)日:2011-08-18
申请号:US12706520
申请日:2010-02-16
申请人: Zvi Or-Bach , Brian Cronquist , Zeev Wurman , Israel Beinglass , J. L. de Jong
发明人: Zvi Or-Bach , Brian Cronquist , Zeev Wurman , Israel Beinglass , J. L. de Jong
IPC分类号: H03K19/173 , H01L23/538 , H01L21/306 , H01L21/26 , H01L21/70
CPC分类号: H01L21/76254 , H01L21/76232 , H01L21/8221 , H01L21/84 , H01L23/481 , H01L23/49827 , H01L24/16 , H01L24/48 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L27/0207 , H01L27/0688 , H01L27/1203 , H01L2224/13025 , H01L2224/131 , H01L2224/16225 , H01L2224/17181 , H01L2224/48145 , H01L2225/06506 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00013 , H01L2924/00014 , H01L2924/01019 , H01L2924/01066 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1431 , H01L2924/1434 , H01L2924/1436 , H01L2924/1443 , H01L2924/15311 , H01L2924/3011 , H01L2924/014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2924/00012
摘要: A Configurable device comprising, a logic die connected by at least one through silicon-via (TSV), to an input/output (I/O) die.
摘要翻译: 一种可配置设备,包括通过至少一个通过硅通孔(TSV)连接到输入/输出(I / O)管芯的逻辑管芯。
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