摘要:
A method including forming at least one passive structure on a substrate by a build-up process; introducing one or more integrated circuit chips on the substrate; and introducing a molding compound on the at least one passive structure and the one or more integrated circuit chips. A method including forming at least one passive structure on a substrate by a three-dimensional printing process; introducing one or more integrated circuit chips on the substrate; and embedding the at least one passive structure and the one or more integrated circuit chips in a molding compound. An apparatus including a package substrate including at least one three-dimensional printed passive structure and one or more integrated circuit chips embedded in a molding material.
摘要:
Some novel features pertain to an integrated device package (e.g., die package) that includes a package substrate, a die, an encapsulation layer and a first set of metal layers. The package substrate includes a first surface and a second surface. The die is coupled to the first surface of the package substrate. The encapsulation layer encapsulates the die. The first set of metal layers is coupled to a first exterior surface of the encapsulation layer. In some implementations, the first set of metal layers is configured to operate as a die-to-wire connector of the integrated device package. In some implementations, the integrated device package includes a second set of metal layers coupled to the second surface of the package substrate. In some implementations, the integrated device package includes a second set of metal layers coupled to a second exterior surface of the encapsulation layer.
摘要:
Some novel features pertain to an integrated device package (e.g., die package) that includes a package substrate, a die, an encapsulation layer and a first set of metal layers. The package substrate includes a first surface and a second surface. The die is coupled to the first surface of the package substrate. The encapsulation layer encapsulates the die. The first set of metal layers is coupled to a first exterior surface of the encapsulation layer. In some implementations, the first set of metal layers is configured to operate as a die-to-wire connector of the integrated device package. In some implementations, the integrated device package includes a second set of metal layers coupled to the second surface of the package substrate. In some implementations, the integrated device package includes a second set of metal layers coupled to a second exterior surface of the encapsulation layer.
摘要:
A method of fabricating sub-millimeter wavelength devices comprising one or more MMIC chips. First and second wafers are batch processed, the first wafer being provided with one or more DC through vias and the second wafer being provided with one or more cavities. The first and second wafers are bonded together. An MMIC chip is placed in the cavity of the second wafer. MMICs may be screened prior to integration, and only known-good die integrated. In one implementation an apparatus is provided which is a pixel of a sub-millimeter wavelength focal plane array and which comprises a layered structure with an antenna aligned with at least one cavity of a waveguide layer. In a further implementation sub- millimeter focal plane array comprising the layered device is provided. MMICs of different technologies may be integrated into the same micromachined package.
摘要:
Some novel features pertain to an inductor structure that includes a first inductor winding, a second inductor winding and a filler. The first inductor winding includes an electrically conductive material. The second inductor winding includes an electrically conductive material. The filler is laterally located between the first inductor winding and the second inductor winding. The filler is configured to provide structural coupling of the first and second inductor windings. In some implementations, the first inductor winding is laterally co-planar to the second inductor winding. In some implementations, the first inductor winding has a first spiral shape and the second inductor winding has a second spiral shape. In some implementations, the first inductor winding and the second inductor winding have an elongated circular shape. In some implementations, the filler is an epoxy.
摘要:
A microelectronic package (10) may have a plurality of terminals (36) disposed at a face (32) thereof which are configured for connection to at least one external component, e.g., a circuit panel (70). First and second microelectronic elements (12), (14) can be affixed with packaging structure (30) therein. A first electrical connection (51A, 40A, 74A) can extend from a respective terminal (36A) of the package (10) to a corresponding contact (20A) on the first microelectronic element (12), and a second electrical connection (53A, 40B, 52A) can extend from the respective terminal (36A) to a corresponding contact (26A) on the second microelectronic element (14), the first and second connections being configured such that a respective signal carried by the first and second connections is subject to propagation delay of the same duration between the respective terminal (36A) and each of the corresponding contacts (20A, 26A) coupled thereto.
摘要:
A microelectronic package (10) can include a substrate (20) having first and second opposed surfaces (21, 22), first, second, third, and fourth microelectronic elements (30a, 30b, 30c, 30d), and terminals (25) exposed at the second surface. Each microelectronic element (30) can have a front surface (31) facing the first surface (21) of the substrate (20) and a plurality of contacts (35) at the front surface. The front surfaces (31) of the microelectronic elements (30) can be arranged in a single plane parallel to and overlying the first surface (21). Each microelectronic element (30) can have a column of contacts (35) exposed at the front surface and arranged along respective first, second, third, and fourth axes (29a, 29b, 29c, 29d). The first and third axes (29a, 29c) can be parallel to one another. The second and fourth axes (29b, 29d) can be transverse to the first and third axes (29a, 29c).