Abstract:
An electrical package for an integrated circuit die (101) which comprises a die-attach paddle (201) for mounting the integrated circuit die (101). The die-attach paddle (201) has at least one down-set area located on a periphery of the die-attach paddle (201). The down-set area has an upper surface and a lower surface, with the upper surface configured to electrically couple a first end of a first electrically conductive lead wire (301). A second end of the first electrically conductive lead wire (301) is bonded to the integrated circuit die (101). The upper surface is further configured to electrically couple a first end of a second electrically conductive lead wire (303) and a second end of the second electrically conductive lead wire (303) is bonded to a lead finger (203) of the electrical package.
Abstract:
An apparatus and a method for producing passive components on an integrated circuit device (100). The integrated circuit device (100) has post wafer fabrication integrated passive components (107) situated on the opposite substrate side (105) of the device's integrated circuitry (103). Electrical contact pads (109) of the passive components (107) are configured to be coupled to the electronics package contact pads to complete the electronic package.
Abstract:
An apparatus and a method for producing three- dimensional integrated circuit packages. In one embodiment, an electronics package (200) with at least two dice (207, 209) are stacked one atop another is disclosed. A top die (209) is of smaller size compared with a bottom die (207) such that after a die attach operation, wire-bond pads of the bottom die will be exposed for a subsequent wire bonding operation. The bottom die (207) contains contact pads (211) on the front side that couple with one or more passive components (213) fabricated on the back side of the top die (209) to complete the circuit. In another exemplary embodiment, a method to form one or more three-dimensional passive components in a stacked-die package is disclosed wherein partial inductor elements are fabricated on the front side of the bottom die and the back side of the top die. The top and bottom elements are coupled together completing the passive component.
Abstract:
The present invention allows non-wafer form devices to be tested on a standard automatic wafer-probe tester or other automated test or measurement device commonly employed in semiconductor or allied industries (e.g., flat panel display, data storage, or the like) processes. The present invention accomplishes this by providing a low-profile carrier (100) for temporarily mounting a non-wafer form device. The low-profile carrier (100) holds the non-wafer form device (e.g., an integrated circuit chip, a thin film head structure, one or more molded array packages, etc.) magnetically into recesses (105, 107) which are machined or otherwise formed in the low-profile carrier (100).
Abstract:
A method of forming an integrated circuit package at the wafer level. The integrated circuit package occupies a minimum amount of space on an end-use printed circuit board. Solder bumps (30), or conductive adhesive, is deposited on the metallized wirebond pads (23) on the top surface of a silicon wafer (21). An underfill-flux material (27) is deposited over the wafer (21) and the solder bumps (30). A pre-fabricated interposer substrate (31), made of a metal circuitry (34) and a dielectric base (32), has a plurality of metallized through-holes (38) which are aligned with the solder bumps (30). The wafer/interposer assembly is reflowed, or cured, to form the electrical connection between the circuitry on the interposer layer (34) and the circuitry on the wafer. Solder balls (50) are then placed on the metal pad openings on the interposer substrate and are reflowed to form a wafer-level BGA structure. The wafer-level BGA structure is then cut into individual BGA chip packages.
Abstract:
A wafer level packaging method which produces a stacked dual/multiple die integrated circuit package (91). In the method, the wafer with the smaller sized dice (15) of two wafers is processed through a metal redistribution process and then solder balls are attached. The wafer is then sawed into individual die size ball-grid array packages. On the wafer with the larger sized dice (25), a die attached adhesive material (18) is deposited on the front of each die site location that is intended for the attachment of one of the die-sized BGA packages. The back side of the BGA die package is placed onto the adhesive material and is cured. A wirebonding operation connects the signals from the die-size BGA package to the circuits of the bottom die. A coating material (80), such as epoxy, is disposed on the wafer to cover the wirebond leads and the assembly is then cured. Then, the stacked-die wafer is singulated into individual stacked-die IC packages (91).
Abstract:
An apparatus and a method for packaging semiconductor devices (205, 207). Disclosed are multi- die packaging apparatuses (200) and techniques, especially useful for integrated circuit dice (207) involving insulative substrates (225), such as silicon- on-insulator (SOI), where grounding of a base layer (225) is not reasonably practical. Disclosed is a means for effectively grounding all layers of an integrated circuit device (205, 207) regardless of whether the device (205, 207) makes direct contact with a die-attach paddle (201).
Abstract:
An apparatus and a method for packaging semi-conductor devices. The apparatus is applicable to many types of contemporary packaging schemes that utilize a sacrificial metal base strip. Tunnels (213) formed through an encapsulation area (215) surrounding the device (207) and associated bond wires (211) are filled with a metallic conductor by, for example, electroplating, and extend bottom contact pads (205) to an uppermost portion of the encapsulated area (215) . The sacrificial metal base strip (201) serves as a plating bus and is etch-removed after plating. The filled tunnels (213) allow components to be stacked in a three-dimensional configuration.
Abstract:
A device (100) for electrically interconnecting one or more semiconductor devices to provide for flexibility in wiring and preventing long or shorted leads and methods for fabricating and using same. The device (100) has a substrate (111) with a plurality of substantially concentric electrically-conductive paths (101, 103, 105, 107), each of the plurality of electrically-conductive paths (101, 103, 105, 107) being electrically isolated from each other and formed on a first surface of the substrate (111). At least one (107) of the plurality of electrically-conductive paths (101, 103, 105, 107) is arranged concentrically so as to substantially span a width of the first surface of the substrate (111). A plurality of bonding pads (109) is electrically coupled to each of the electricallyconductive paths (101, 103, 105, 107). The plurality of bonding pads is coupled to one of the electrically conductive paths and is electrically isolated from bonding pads located on any other electrically-conductive path (101, 103, 105, 107). The entire interconnect device (100) may be mounted in a standard leadframe product.
Abstract:
A dual-die integrated circuit package (10) having two integrated circuit chips (14, 16) "flip chip" attached to each other and with one of the chips (14) being aligned at a specified angle in relation to the other chip (16) to allow access to bonding pads on the surface of each chip for wirebonding connection into the chip package. In a first embodiment, the two chips are rectangular in shape and are aligned at an angle of 90 degrees with respect to each other, thus allowing the end portions of the bottom chip to be accessible for connection into the chip package. Other embodiments maintain the chips at angles of less than 90 degrees, such that corner portions of each chip are accessible for connection into the chip package. The invention allows two identically constructed chips to be used for doubling or even greater multiplication of the functionality or memory of the IC package, while still using the same package footprint as for a single chip. Also, being able to use two chips that are identically constructed from a wafer fabrication standpoint provides the advantage of requiring only one IC design process.