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公开(公告)号：CN101673729A
公开(公告)日：2010-03-17
申请号：CN200910147421.6
申请日：2009-06-10
申请人： 株式会社瑞萨科技
IPC分类号： H01L25/00 , H01L23/48 , H01L23/482 , H02M3/10
CPC分类号： H01L23/492 , H01L23/3107 , H01L23/4952 , H01L23/49524 , H01L23/49548 , H01L23/49575 , H01L23/49582 , H01L24/05 , H01L24/33 , H01L24/34 , H01L24/36 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/91 , H01L2224/04042 , H01L2224/05073 , H01L2224/05553 , H01L2224/05554 , H01L2224/05644 , H01L2224/29111 , H01L2224/2919 , H01L2224/32014 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/4007 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45015 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4847 , H01L2224/48639 , H01L2224/48644 , H01L2224/49111 , H01L2224/49112 , H01L2224/49113 , H01L2224/49171 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/85439 , H01L2224/92 , H01L2224/92247 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15747 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/351 , H02M7/003 , H01L2924/00014 , H01L2224/83 , H01L2224/84 , H01L2924/00 , H01L2924/00012
摘要： 本发明提供一种半导体器件。在半导体器件(SM1)的封装(PA)内包装了形成有功率金氧半场效晶体管的半导体芯片(4PH，4PL)、和形成有控制其动作的控制电路的半导体芯片(4D)，半导体芯片(4PH，4PL，4D)各自被搭载在印模焊垫(7D1，7D2，7D3)上。高边的半导体芯片(4PH)的源电极用的接合焊垫(12S1，12S2)，经由金属板(8A)与印模焊垫(7D2)电连接。在印模焊垫(7D2)的上表面设有形成于搭载了半导体芯片(4PL)的区域的电镀层(9b)、以及形成于接合有金属板(8A)的区域的电镀层(9c)，电镀层(9b)和电镀层(9c)经由未形成有电镀层的区域被隔开。本发明可提高半导体器件的可靠性。
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公开(公告)号：CN101582415A
公开(公告)日：2009-11-18
申请号：CN200910142454.1
申请日：2005-02-16
申请人： 株式会社瑞萨科技
IPC分类号： H01L25/00 , H01L23/49 , H01L23/495 , H02M3/10
CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754
摘要： 本发明提供了一种半导体器件，包括这样一个电路的非绝缘型DC－DC转换器，在该电路中用于高压侧开关的功率MOS·FET和用于低压侧开关的功率MOS·FET串联连接。在非绝缘型DC－DC转换器中，用于高压侧开关的功率晶体管、用于低压侧开关的功率晶体管和驱动这些功率晶体管的驱动电路分别由不同的半导体芯片构成。这三个半导体芯片被容纳在一个封装中，并且包括用于高压侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被彼此邻近地布置。
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公开(公告)号：CN1728379A
公开(公告)日：2006-02-01
申请号：CN200510077212.0
申请日：2005-06-16
申请人： 株式会社瑞萨科技
IPC分类号： H01L27/02 , H01L29/78 , H01L21/82 , H01L21/336
CPC分类号： H01L27/0629 , H01L21/28035 , H01L21/823475 , H01L23/3107 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/1095 , H01L29/41741 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/45 , H01L29/456 , H01L29/4916 , H01L29/66143 , H01L29/66734 , H01L29/7806 , H01L29/7813 , H01L29/872 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45015 , H01L2224/45144 , H01L2224/48011 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48253 , H01L2224/48624 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12032 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1532 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/155 , H02M7/003
摘要： 提供一种电源电压转换效率提高的半导体器件。在具有一个其中用于高端开关的功率MOSFET和用于低端开关的功率MOSFET串联连接的电路的非绝缘DC－DC转换器中，用于低端开关的功率MOSFET和肖特基势垒二极管形成在一个半导体芯片内，该肖特基势垒二极管与该用于低端开关的功率MOSFET并联连接。肖特基势垒二极管的形成区域SDR布置在半导体芯片较短方向上的中心，以及在其两侧上布置用于低端开关的功率MOSFET的形成区域。从半导体芯片主表面上两个长边附近的栅极指向肖特基势垒二极管的形成区域SDR，布置多个栅极指，使得形成区域SDR插入在它们之间。
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公开(公告)号：CN100521197C
公开(公告)日：2009-07-29
申请号：CN200510064738.5
申请日：2005-04-18
申请人： 株式会社瑞萨科技
CPC分类号： H02M1/08 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/05599 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40137 , H01L2224/40245 , H01L2224/40247 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/83801 , H01L2224/84801 , H01L2224/8485 , H01L2224/85444 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01059 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12032 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2924/20753
摘要： 本发明提供一种非绝缘DC-DC转换器，该转换器具有用于高端开关的功率MOSFET和用于低端开关的功率MOSFET。在该非绝缘DC-DC转换器中，用于高端开关的功率MOSFET、用于低端开关的功率MOSFET、分别控制这些功率MOSFET的操作的驱动电路、和与用于低端开关的功率MOSFET并联连接的肖特基势垒二极管，分别形成在不同的半导体芯片中。这四个半导体芯片存储在一个管壳中。这些半导体芯片安装在同一芯片焊盘上方。布置这些半导体芯片使得它们彼此接近。
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公开(公告)号：CN101488496A
公开(公告)日：2009-07-22
申请号：CN200910004386.2
申请日：2004-05-13
申请人： 株式会社瑞萨科技
IPC分类号： H01L25/00 , H01L23/48 , H01L23/538 , H02M3/00
CPC分类号： H01L23/49575 , H01L23/495 , H01L23/4952 , H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2224/0401 , H01L2224/05624 , H01L2224/0603 , H01L2224/16 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40247 , H01L2224/45014 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48624 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49112 , H01L2224/49175 , H01L2224/84801 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/00015
摘要： 本发明公开了一种半导体集成电路。功率MOS－FET被用作非绝缘DC/DC变换器中的高端开关晶体管。用作功率MOS－FET源极端子的电极区分别通过连结导线连接到一个外部引线和两个外部引线。所述一个外部引线是连接到用于驱动栅极的通路上的外部端子。所述两个外部引线中的每一个是连接到主电流通路的外部端子。由于以分立的形式连接主电流通路和栅极驱动通路，因此可以减小寄生电感的影响，并提高电压变换效率。
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公开(公告)号：CN1677666A
公开(公告)日：2005-10-05
申请号：CN200510007761.0
申请日：2005-02-16
申请人： 株式会社瑞萨科技
IPC分类号： H01L25/00 , H01L23/495 , H02M3/155
CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754
摘要： 本发明提供了一种具有这样一个电路的非绝缘型DC－DC转换器，在该电路中用于高压侧开关的功率MOS·FET和用于低压侧开关的功率MOS·FET串联连接。在非绝缘型DC－DC转换器中，用于高压侧开关的功率晶体管、用于低压侧开关的功率晶体管和驱动这些功率晶体管的驱动电路分别由不同的半导体芯片构成。这三个半导体芯片被容纳在一个封装中，并且包括用于高压侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被彼此邻近地布置。
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公开(公告)号：CN1551342A
公开(公告)日：2004-12-01
申请号：CN200410043136.7
申请日：2004-05-13
申请人： 株式会社瑞萨科技
IPC分类号： H01L23/48
CPC分类号： H01L23/49575 , H01L23/495 , H01L23/4952 , H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2224/0401 , H01L2224/05624 , H01L2224/0603 , H01L2224/16 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40247 , H01L2224/45014 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48624 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49112 , H01L2224/49175 , H01L2224/84801 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/00015
摘要： 功率MOS－FET被用作非绝缘DC/DC变换器中的高端开关晶体管。用作功率MOS－FET源极端子的电极区分别通过连结导线连接到一个外部引线和两个外部引线。所述一个外部引线是连接到用于驱动栅极的通路上的外部端子。所述两个外部引线中的每一个是连接到主电流通路的外部端子。由于以分立的形式连接主电流通路和栅极驱动通路，因此可以减小寄生电感的影响，并提高电压变换效率。
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公开(公告)号：CN100524735C
公开(公告)日：2009-08-05
申请号：CN200510007761.0
申请日：2005-02-16
申请人： 株式会社瑞萨科技
IPC分类号： H01L25/00 , H01L23/495 , H02M3/155
CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754
摘要： 本发明提供了一种具有这样一个电路的非绝缘型DC-DC转换器，在该电路中用于高压侧开关的功率MOS·FET和用于低压侧开关的功率MOS·FET串联连接。在非绝缘型DC-DC转换器中，用于高压侧开关的功率晶体管、用于低压侧开关的功率晶体管和驱动这些功率晶体管的驱动电路分别由不同的半导体芯片构成。这三个半导体芯片被容纳在一个封装中，并且包括用于高压侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被彼此邻近地布置。
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公开(公告)号：CN100521201C
公开(公告)日：2009-07-29
申请号：CN200510077212.0
申请日：2005-06-16
申请人： 株式会社瑞萨科技
IPC分类号： H01L27/02 , H01L29/78 , H01L21/82 , H01L21/336
CPC分类号： H01L27/0629 , H01L21/28035 , H01L21/823475 , H01L23/3107 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/1095 , H01L29/41741 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/45 , H01L29/456 , H01L29/4916 , H01L29/66143 , H01L29/66734 , H01L29/7806 , H01L29/7813 , H01L29/872 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45015 , H01L2224/45144 , H01L2224/48011 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48253 , H01L2224/48624 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12032 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1532 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/155 , H02M7/003
摘要： 提供一种电源电压转换效率提高的半导体器件。在具有一个其中用于高端开关的功率MOSFET和用于低端开关的功率MOSFET串联连接的电路的非绝缘DC-DC转换器中，用于低端开关的功率MOSFET和肖特基势垒二极管形成在一个半导体芯片内，该肖特基势垒二极管与该用于低端开关的功率MOSFET并联连接。肖特基势垒二极管的形成区域SDR布置在半导体芯片较短方向上的中心，以及在其两侧上布置用于低端开关的功率MOSFET的形成区域。从半导体芯片主表面上两个长边附近的栅极指向肖特基势垒二极管的形成区域SDR，布置多个栅极指，使得形成区域SDR插入在它们之间。
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公开(公告)号：CN100474571C
公开(公告)日：2009-04-01
申请号：CN200410043136.7
申请日：2004-05-13
申请人： 株式会社瑞萨科技
IPC分类号： H01L23/48
CPC分类号： H01L23/49575 , H01L23/495 , H01L23/4952 , H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2224/0401 , H01L2224/05624 , H01L2224/0603 , H01L2224/16 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40247 , H01L2224/45014 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48624 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49112 , H01L2224/49175 , H01L2224/84801 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/00015
摘要： 功率MOS-FET被用作非绝缘DC/DC变换器中的高端开关晶体管。用作功率MOS-FET源极端子的电极区分别通过连结导线连接到一个外部引线和两个外部引线。所述一个外部引线是连接到用于驱动栅极的通路上的外部端子。所述两个外部引线中的每一个是连接到主电流通路的外部端子。由于以分立的形式连接主电流通路和栅极驱动通路，因此可以减小寄生电感的影响，并提高电压变换效率。
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