摘要:
An alloy layer (12) contacting portions of a conductive interconnect layer (2) exposed through an overlaying organic insulating layer (4) having apertures therethrough. The alloy contains chromium and titanium, and is formed such that at least 50 atom % of the total content of the alloy is titanium at the alloy-insulating layer interface (6).
摘要:
A metal wire for use in connection to integrated circuits has a ball at its tip. The wire has a diameter of 20 to 100 µm and a maximum elongation of not more than 60% at room temperature (20°C) and is an Al wire or a Cu wire. The wire has been annealed at a temperature higher than the recrystallization temperature of the metal material in a non-oxidizing atmosphere. The ball is spherical in shape and has a hardness substantially equal to that of the metal wire. When used, this wire avoids local deformation.
摘要:
An element for use in electrical connection comprises a holding member (125) having an insulator (111) and metallic powder dispersed in said insulator and a conductive member (107) laid in said holding member said conductive member has an end which is exposed on the surface of one side of said holding member and another end which is exposed on the surface of the other side of said holding member.
摘要:
A capillary for use in ball bonding tools designed to bond metal leads to the bonding pads on a microchip and pads or leads on a chip support is formed by chemically vapor depositing a substantially smooth silicon carbide coating having high electrical resistivity onto a substrate which is then removed by etching or combustion.
摘要:
A material for use in the manufacture of semiconductor devices, a process for manufacturing the material, and a heat radiator structure for a semiconductor device. The material is a binary Al-Si alloy containing 30-60% by weight of Si. This material can be produced by powder metallurgy techniques, such as by preparing a dispersion of Si powder in Al by mechanical alloying or by applying gas atomization, after which the powder is formed by hot extrusion, e.g. into radiation fins. The heat radiator structure consists of the radiation fins, made from the Al-Si alloy, glued to the substrate.
摘要:
Disclosed is a semiconductor device wherein among elements forming brazing material for bonding an electrode (21, 22) on a semiconductor substrate (2) to an external electrode (11, 12), the amounts of elements reacting with the material of electrode (21, 22) or external electrode (11, 12) and forming a compound harder and more brittle than the electrode material are smaller on the portion contacting the electrode (21,22) or external electrode (11, 12) than at other portions. A fabrication method of such device is also disclosed, involving the steps of laminating and depositing an at least two-layered metallic layer (140, 150) on the surface of the electrode (21, 22) on the substrate (2) or the surface of the external electrode (11, 12), bringing the electrodes (21, 22; 11, 12) into intimate contact with each other while opposing one another, and bonding them together by force of pressure applied to both electrodes (21, 22; 11, 12) while being heated close to an eutectic temperature of an alloy consisting of the metals of the uppermost and subsequent layers (140, 150), immediately therebelow, of the metallic layer (140, 150).
摘要:
A light emitting device package (100) is disclosed. The light emitting device package (100) includes a light emitting device (130) disposed on a first lead frame (121), the light emitting device (130) having an electrode pad (150) on an upper surface thereof, a first wire (170) to electrically interconnect a second lead frame (122) spaced apart from the first lead frame (121) and the electrode pad (150), and a first bonding ball (190) disposed on the second lead frame (122), the first bonding ball (190) spaced apart from a first contact point (180), which is in contact with the first wire (170) and the second lead frame (122), wherein the first bonding ball (190) is disposed between the first wire (170) and the second lead frame (122) to electrically interconnect the first wire (170) and the second lead frame (122). In the light emitting device package (100), the wire (170) is fixed using the bonding ball (190) upon wire bonding, thereby preventing the wire (170) from separating from the lead frame (122) at the bonded portion therebetween. Also, the wire (170) is electrically connected to the lead frame (122) via the bonding ball (190), thereby improving reliability of wire bonding.
摘要:
The invention relates to an electronic component having a GaAs semiconductor substrate (HS), semiconductor components (BE) being implemented on the front side thereof, and the back side thereof having a multilayer backside metallization (RM), wherein an advantageous construction of the layer sequence of the backside metallization is proposed, the backside metallization in particular comprising an Au layer as a bonding layer.
摘要:
There is disclosed a transistor package (PK1; PK2; PK3), comprising a transistor (TR) with a transistor output (TO), and an output terminal (OT). The transistor output is connected to the output terminal (OT) via an output bondwire (Ld); and is also connected to a series arrangement of an inductor (Li1, Li2) and a capacitor (Cb). The inductor is for resonating with the capacitive output impedance of the transistor output, and the capacitor is for for blocking DC currents. The inductor is formed by first (Li1) and second (Li2) bondwires in series, the first bondwire (Li1) being placed to positively couple with the output bondwire (Ld; Ld1), and the second bondwire (Li2) being placed to negatively couple with the output bondwire (Ld; Ld1).