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公开(公告)号：JPWO2016135993A1
公开(公告)日：2017-04-27
申请号：JP2015532223
申请日：2015-06-05
申请人： 日鉄住金マイクロメタル株式会社 , 新日鉄住金マテリアルズ株式会社
发明人： 大造 小田 , 大造 小田 , 基稀 江藤 , 基稀 江藤 , 山田 隆 , 隆 山田 , 榛原 照男 , 照男 榛原 , 良 大石 , 良 大石 , 宇野 智裕 , 智裕 宇野 , 哲哉 小山田 , 哲哉 小山田
IPC分类号： H01L21/60
CPC分类号： H01L24/45 , C22C9/00 , C22F1/08 , H01L24/05 , H01L24/43 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43848 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45109 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45609 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/85045 , H01L2224/85054 , H01L2224/85065 , H01L2224/85075 , H01L2224/8509 , H01L2224/85203 , H01L2224/85439 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01028 , H01L2924/01031 , H01L2924/01032 , H01L2924/01045 , H01L2924/01046 , H01L2924/01078 , H01L2924/10253 , H01L2924/1576 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/20111 , H01L2924/20752 , H01L2924/01204 , H01L2924/01049 , H01L2924/01014 , H01L2924/01029 , H01L2924/013 , H01L2924/00013 , H01L2924/01001 , H01L2924/01007 , H01L2924/20105 , H01L2924/20656 , H01L2924/00 , H01L2924/2011 , H01L2924/01004 , H01L2924/01033
摘要： 表面にPd被覆層を有するCuボンディングワイヤにおいて、高温高湿環境でのボール接合部の接合信頼性を改善し、車載用デバイスに好適なボンディングワイヤを提供する。Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層とを有する半導体装置用ボンディングワイヤにおいて、ボンディングワイヤがInを0.011〜1.2質量%含み、Pd被覆層の厚さが0.015〜0.150μmである。これにより、高温高湿環境下でのボール接合部の接合寿命を向上し、接合信頼性を改善することができる。Cu合金芯材がPt、Pd、Rh、Niの1種以上をそれぞれ0.05〜1.2質量%含有すると、175℃以上の高温環境でのボール接合部信頼性を向上できる。また、Pd被覆層の表面にさらにAu表皮層を形成するとウェッジ接合性が改善する。
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公开(公告)号：JP5937770B1
公开(公告)日：2016-06-22
申请号：JP2015548080
申请日：2015-09-18
申请人： 日鉄住金マイクロメタル株式会社 , 新日鉄住金マテリアルズ株式会社
IPC分类号： H01L21/60
CPC分类号： H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/43125 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/48507 , H01L2224/48824 , H01L2224/78301 , H01L2224/85045 , H01L2224/85203 , H01L2224/85205 , H01L2224/85439 , H01L24/05 , H01L24/43 , H01L24/48 , H01L24/78 , H01L24/85 , H01L2924/10253 , H01L2924/1576
摘要： 表面にPd被覆層を有するCuボンディングワイヤにおいて、高温高湿環境でのボール接合部の接合信頼性を改善し、車載用デバイスに好適なボンディングワイヤを提供する。Cu合金芯材とその表面に形成されたPd被覆層とを有する半導体装置用ボンディングワイヤにおいて、ボンディングワイヤがAs、Te、Sn、Sb、Bi、Seの1種以上の元素を合計で0.1〜100質量ppm含有する。これにより、高温高湿環境下でのボール接合部の接合寿命を向上し、接合信頼性を改善することができる。Cu合金芯材がさらにNi、Zn、Rh、In、Ir、Pt、Ga、Geの1種以上をそれぞれ0.011〜1.2質量%含有すると、170℃以上の高温環境でのボール接合部信頼性を向上できる。また、Pd被覆層の表面にさらにAuとPdを含む合金表皮層を形成するとウェッジ接合性が改善する。
摘要翻译： 在Cu中接合线在表面上具有一个钯涂层，以改善在高温和高湿度环境中的球窝接头的接合可靠性，以提供合适的接合线的车载设备。 在接合线用于具有Cu合金芯材和形成在其表面上Pd涂层层的半导体器件，接合线是由于，碲，锡，锑，铋，总共0.1硒的一种或多种元素 质量ppm遏制。 这使得能够提高球窝接头的接合在生命的高温和高湿度的环境中，以提高接合可靠性。 Cu合金芯材进一步镍，锌，铑，在，铱，铂，镓时的，葛1以上，分别含有0.011〜1.2重量％，在170℃下提高球窝接头的可靠性或多个高温环境 它可以是。 此外，还楔接合是通过形成含Au和Pd，Pd涂层层的表面上的合金表层改善。
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公开(公告)号：JP2012169374A
公开(公告)日：2012-09-06
申请号：JP2011027860
申请日：2011-02-10
发明人： CHIBA ATSUSHI , TEJIMA SATOSHI , KOBAYASHI YU , YASUTOKU YUKI
IPC分类号： H01L21/60
CPC分类号： C22C5/06 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/431 , H01L2224/43848 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/48463 , H01L2224/48507 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85075 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/00014 , H01L2924/01007 , H01L2924/01046 , H01L2924/01039 , H01L2924/01064 , H01L2924/0106 , H01L2924/01062 , H01L2924/01004 , H01L2924/01083 , H01L2924/00 , H01L2924/00015 , H01L2924/01204 , H01L2924/013 , H01L2924/20759 , H01L2924/2076 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/2075 , H01L2924/20754 , H01L2924/01205 , H01L2924/01022 , H01L2924/01077 , H01L2924/00013
摘要： PROBLEM TO BE SOLVED: To enhance the bonding reliability of an aluminum pad in a bonding wire for semiconductor used in a high temperature, high humidity environment.SOLUTION: The ternary alloy based bonding wire, which is the bonding wire for semiconductor, is composed of 4-10 mass% of gold having purity of 99.999 mass% or higher, 2-5 mass% of palladium having purity of 99.99 mass% or higher, and the reminder of silver having purity of 99.999 mass% or higher. An oxidizing non-noble metal j element is contained by 15-70 mass ppm, annealing heat treatment is performed before continuous dice wire drawing, conditioning heat treatment is performed after continuous dice wire drawing, and then ball bonding is performed in nitrogen atmosphere. On the bonding interface of an Ag-Au-Pd ternary alloy wire and an aluminum pad, corrosion between an AgAl intermetallic compound layer and the wire is suppressed by AuAl and a Pd concentration layer.
摘要翻译： 要解决的问题：提高在高温，高湿度环境中使用的半导体用接合线中的铝焊盘的接合可靠性。 解决方案：作为半导体用接合线的三元合金基接合线由纯度为99.999质量％以上的4-10质量％的金和纯度为99.99的钯的2-5质量％组成 质量％以上，银的纯度为99.999质量％以上的提示。 氧化性非贵金属j元素含有15-70质量ppm，在连续的丝线拉丝之前进行退火热处理，连续的骰子拉丝后进行调理热处理，然后在氮气气氛中进行球接。 在Ag-Au-Pd三元合金线和铝焊盘的接合界面上，Ag
2 Al金属间化合物层和导线之间的腐蚀被Au 2 Al和Pd浓度层。 版权所有（C）2012，JPO＆INPIT -
公开(公告)号：JPWO2010005086A1
公开(公告)日：2012-01-05
申请号：JP2010504316
申请日：2009-07-10
申请人： 新日鉄マテリアルズ株式会社 , 株式会社日鉄マイクロメタル
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/4312 , H01L2224/4321 , H01L2224/4382 , H01L2224/43825 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48091 , H01L2224/4847 , H01L2224/48471 , H01L2224/48475 , H01L2224/48486 , H01L2224/48499 , H01L2224/48507 , H01L2224/48511 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48699 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85051 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85986 , H01L2225/06562 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/3025 , H01L2924/351 , Y10T428/12222 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01001 , H01L2924/01203 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20652 , H01L2924/20655 , H01L2924/20645 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/01049
摘要： 本発明は、材料費が安価で、バンプの上にウェッジ接合を行う逆ボンディングにおいて、連続ボンディングの生産性が高く、高温加熱、熱サイクル試験、リフロー試験又はHAST試験等の信頼性に優れる銅系ボンディングワイヤの接合構造を提供することを目的とする。半導体素子の電極上に形成したボールバンプの上にボンディングワイヤを接続する接合構造であって、前記ボンディングワイヤ及び前記ボールバンプは銅を主成分とし、前記接合部の界面に銅以外の金属Rの濃度が前記ボールバンプにおける金属Rの平均濃度の10倍以上である濃化層Aを有し、且つ、ボールバンプと電極との接合界面に金属Rの濃度が、ボールバンプにおける金属Rの平均濃度の10倍以上である濃化層Bを有するボンディングワイヤの接合構造である。
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公开(公告)号：JP2009177104A
公开(公告)日：2009-08-06
申请号：JP2008028839
申请日：2008-02-08
发明人： TANAKA MASAKAZU , TAKAHASHI KOHEI , OKABE SEIJI
CPC分类号： H01L24/05 , H01L23/4952 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/85 , H01L2224/02166 , H01L2224/04042 , H01L2224/05082 , H01L2224/05166 , H01L2224/05624 , H01L2224/05647 , H01L2224/32225 , H01L2224/32245 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48453 , H01L2224/48465 , H01L2224/48507 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48847 , H01L2224/73265 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/01203 , H01L2924/01327 , H01L2924/10253 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/19043 , H01L2924/20755 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754 , H01L2924/01006
摘要： PROBLEM TO BE SOLVED: To improve reliability of a bonded region between a bonding wire and an electrode pad in a high-temperature operation. SOLUTION: This semiconductor device 100 is provided with: a semiconductor chip 102; AlCu pads 107 formed on the semiconductor chip 102, containing Al as a main constituent and further containing Cu; and CuP wires 111 being connection members connecting inner leads 117 arranged in the outside of the semiconductor chip 102 to the semiconductor chip 102, and mainly containing Cu; and is sealed by a sealing resin 115 substantially without containing halogen. A plurality of alloy layers different in composition ratios of Al to Cu are formed in connection regions between the AlCu pads 107 and the CuP wires 111, and each alloy layer includes a CuAl 2 layer, and a layer formed between the CuAl 2 layer and the CuP wire 111, and having a relatively low Al composition ratio relative to the CuAl 2 layer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译： 解决的问题：为了提高高温运转时的接合线和电极焊盘之间的接合区域的可靠性。 解决方案：该半导体器件100设置有：半导体芯片102; 形成在半导体芯片102上的AlCu焊盘107，其包含Al作为主要成分并且还含有Cu; 并且CuP布线111是将配置在半导体芯片102的外部的内部引线117与半导体芯片102连接并且主要包含Cu的连接构件; 并且基本上不含卤素的密封树脂115密封。 在AlCu焊盘107和CuP线111之间的连接区域中形成有多个Al与Cu的组成比不同的合金层，并且每个合金层包括CuAl
2 层，形成层 在CuAl 2 层和CuP线111之间，并且相对于CuAl 2 层具有相对低的Al组成比。 版权所有（C）2009，JPO＆INPIT -
公开(公告)号：JP2006270075A
公开(公告)日：2006-10-05
申请号：JP2006044854
申请日：2006-02-22
发明人： OTA MITSURU , KATO TOMONORI
CPC分类号： H01L24/05 , H01L24/73 , H01L2224/02166 , H01L2224/04042 , H01L2224/05624 , H01L2224/32225 , H01L2224/32245 , H01L2224/45 , H01L2224/45144 , H01L2224/45164 , H01L2224/48 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48453 , H01L2224/48463 , H01L2224/48465 , H01L2224/48507 , H01L2224/48624 , H01L2224/73265 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01202 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/013
摘要： PROBLEM TO BE SOLVED: To improve the reliability of a joint region between a bonding wire and an electrode pad during a high-temperature operation. SOLUTION: In a semiconductor device 100, a semiconductor chip 102 is mounted on a lead frame 121, and the chip and the frame are sealed with sealing resin 115. A lead frame 119 is provided on the side of the lead frame 121. A part of the lead frame 119 is sealed with the sealing resin 115 as an inner lead 117. The sealing resin 115 is composed of a resin composition substantially containing no halogen. Further, the inner lead 117 and the exposed portion of an Al pad 107 provided on the semiconductor chip 102 are electrically connected to each other via an AuPd wire 111. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译： 要解决的问题：为了提高高温运转时的接合线和电极焊盘之间的接合区域的可靠性。 解决方案：在半导体器件100中，半导体芯片102安装在引线框架121上，并且芯片和框架被密封树脂115密封。引线框架119设置在引线框架121的侧面 引线框架119的一部分用作为内引线117的密封树脂115密封。密封树脂115由基本上不含卤素的树脂组合物构成。 此外，设置在半导体芯片102上的内引线117和Al焊盘107的露出部分经由AuPd线111彼此电连接。版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2005223123A
公开(公告)日：2005-08-18
申请号：JP2004029094
申请日：2004-02-05
发明人： YONEDA TADANAKA , MIMURA TADAAKI , INUI TADAHISA , OKI SHIGERU
IPC分类号： H01L21/60
CPC分类号： H01L24/05 , H01L24/03 , H01L24/06 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05093 , H01L2224/05554 , H01L2224/05624 , H01L2224/45 , H01L2224/45144 , H01L2224/48 , H01L2224/48453 , H01L2224/48463 , H01L2224/48507 , H01L2224/48624 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04953 , H01L2924/05042 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method in which stability of electrical characteristics evaluation such as probe inspection and a connection process such as bonding is easily raised when a pad is provided on the wiring of a semiconductor element through an insulating film, while the semiconductor element with high yield and reliability is provided with no rising in manufacturing costs as no cracking occurs on the insulating film under the pad. SOLUTION: A pad of two-layer structure comprising at least two kinds of material, a TiN film 61 and an Al film 62, is provided on a semiconductor element 50 and a wiring 57 through an insulating film 59. The Young's modulus of the material of the lower layer film is higher than that of the material of the upper layer film. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译： 解决的问题：提供一种半导体器件及其制造方法，其中当在半导体元件的布线上设置焊盘时，容易引起诸如探针检查和诸如接合的连接工艺的电特性评估的稳定性 通过绝缘膜，虽然提供高产率和可靠性的半导体元件没有上升的制造成本，因为在焊盘下方的绝缘膜上不发生开裂。 解决方案：通过绝缘膜59在半导体元件50和布线57上设置包括至少两种材料的TiN膜61和Al膜62的两层结构的焊盘。杨氏模量 的下层膜的材料比上层膜的材料高。 版权所有（C）2005，JPO＆NCIPI
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8.发明专利Metal material for bonding, metal junction structure, and semiconductor device 审中-公开用于结合的金属材料，金属结构结构和半导体器件
公开(公告)号：JP2005085906A
公开(公告)日：2005-03-31
申请号：JP2003314710
申请日：2003-09-05
申请人： Fab Solution Kk , ファブソリューション株式会社
发明人： SUZUKI KOICHI
IPC分类号： H01L21/60
CPC分类号： H01L2224/05624 , H01L2224/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/48 , H01L2224/4807 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48453 , H01L2224/48465 , H01L2224/48507 , H01L2224/48624 , H01L2224/48724 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/013 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a metal material for bonding capable of improving junction strength in the metal material such as a conductive wire connected to an electrode on a semiconductor chip under a high-temperature environment, and to provide a metal junction structure, and a reliable semiconductor device. SOLUTION: A ternary alloy made of Au, Pd, and Pt or that made of Au, Pd, and Cu is used as the conductor wire 17 for connecting the Al-containing electrode 11a of a semiconductor chip 11 to the lead frame 16 of a package 12, thus improving the bonding strength between the conductor wire 17 and the Al-containing electrode 11a and obtaining the metal junction structure having a superior hear resistance property. Additionally, sealing is made by resin of which glass transition point is low, thus obtaining the semiconductor having excellent moisture resistance. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译： 要解决的问题：提供一种用于接合的金属材料，其能够在高温环境下提高连接到半导体芯片上的电极的金属材料如金属材料中的结合强度，并提供金属接合部 结构和可靠的半导体器件。 解决方案：使用由Au，Pd和Pt制成的三元合金或由Au，Pd和Cu制成的三元合金作为用于将半导体芯片11的含Al电极11a连接到引线框架的导线17 16，从而提高导体线17和含Al电极11a之间的接合强度，并获得具有优异的抗电阻性的金属接合结构。 此外，由玻璃化转变点低的树脂进行密封，从而获得具有优异的耐湿性的半导体。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP6420015B2
公开(公告)日：2018-11-07
申请号：JP2018109570
申请日：2018-06-07
申请人： 日鉄マイクロメタル株式会社 , 新日鉄住金マテリアルズ株式会社
IPC分类号： H01L21/60
CPC分类号： H01L24/45 , H01L2224/05624 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45609 , H01L2224/45618 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45678 , H01L2224/48011 , H01L2224/48247 , H01L2224/48507 , H01L2224/85065 , H01L2224/85075 , H01L2224/85439 , H01L2924/10253 , H01L2924/1576 , H01L2924/20752 , H01L2924/013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01007 , H01L2924/01001 , H01L2924/01028 , H01L2924/00013 , H01L2924/20656 , H01L2924/01046 , H01L2924/01078 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/0102 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01045 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01077 , H01L2924/01083 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204
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公开(公告)号：JP6353486B2
公开(公告)日：2018-07-04
申请号：JP2016096235
申请日：2016-05-12
申请人： 日鉄住金マイクロメタル株式会社 , 新日鉄住金マテリアルズ株式会社
CPC分类号： H01L24/45 , H01L2224/05624 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45609 , H01L2224/45618 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45678 , H01L2224/48011 , H01L2224/48247 , H01L2224/48507 , H01L2224/85065 , H01L2224/85075 , H01L2224/85439 , H01L2924/10253 , H01L2924/1576 , H01L2924/20752 , H01L2924/013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01007 , H01L2924/01001 , H01L2924/01028 , H01L2924/00013 , H01L2924/20656 , H01L2924/01046 , H01L2924/01078 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/0102 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01045 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01077 , H01L2924/01083 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204
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