摘要:
An imbalance correction method for correcting the imbalance of a rotor measures the vibration state of the rotor before temporary correction and the vibration state of the rotor after the temporary correction in a plurality of rotational speeds in order to make vibration values below the standard. An aggregation range of the tips of correction vectors for obtaining a vibration value which satisfies a vibration standard is calculated from vibration vectors in the rotational speeds. A real correction vector is selected from correction vectors having the tips in a region in which the aggregation ranges calculated for each of the rotational speeds overlap one another among a plurality of the correction vectors. A real correction amount and a real correction phase are set based on the real correction vector. The imbalance of the rotor is corrected based on the real correction amount and the real correction phase.
摘要:
A method of producing a chip embedded substrate is disclosed. This method comprises a first step of mounting a semiconductor chip on a first substrate on which a first wiring is formed; and a second step of joining the first substrate with a second substrate on which a second wiring is formed. In the second step, the semiconductor chip is encapsulated between the first substrate and the second substrate and electrical connection is made between the first wiring and the second wiring so as to form multilayered wirings connected to the semiconductor chip.
摘要:
It is configured to comprise a semiconductor chip 110, a resin member 106 for forming a cavity 109 in which this semiconductor chip 110 is installed, and wiring 105 constructed of pattern wiring 105b formed so as to be exposed to an upper surface 106b of this resin member 106 and also connected to the semiconductor chip 110 and a post part 105a in which one end is connected to the pattern wiring 105b and also the other end is formed so as to be exposed to a lower surface 106a of the resin member 106.
摘要:
First, a unilayer wiring board is fabricated, which has wiring layers formed in desired shapes on both sides of an insulating base member; and a metal bump formed on the wiring layer on one side of the insulating base member. Then, a desired number of unilayer boards are prepared and stacked up. On that case, the board disposed in the uppermost layer is prepared without having a metal bump. The boards are positioned and stacked up in such a manner that a metal bump of one of adjacent boards is connected to a corresponding wiring layer of the other board. Thereafter, resin is filled into gaps between the stacked boards, and insulating layers are formed on both sides of a multilayer board obtained through the above steps, in such a manner as to cover the entire surface except pad areas defined at predetermined positions on the wiring layers.
摘要:
It is configured to comprise a semiconductor chip 110, a resin member 106 for forming a cavity 109 in which this semiconductor chip 110 is installed, and wiring 105 constructed of pattern wiring 105b formed so as to be exposed to a lower surface 106a of this resin member 106 and also connected to the semiconductor chip 110 and a post part 105a in which one end is connected to the pattern wiring 105b and also the other end is formed so as to be exposed to a front surface 106b of the resin member 106.
摘要:
A vacuum degassing apparatus for molten glass is comprised of an uprising pipe, a vacuum degassing vessel, a downfalling pipe, an upstream side pit that supplies molten glass to the uprising pipe, and a downstream side pit that receives molten glass from the downfalling pipe. The vacuum degassing apparatus for molten glass is further comprised of a separating mechanism that separates a part of molten glass moving from the downfalling pipe to the downstream side pit, and a returning pipe that returns separated molten glass to the upstream side pit.
摘要:
A vacuum degassing apparatus for molten glass is comprised of an uprising pipe, a vacuum degassing vessel, a downfalling pipe, an upstream side pit that supplies molten glass to the uprising pipe, and a downstream side pit that receives molten glass from the downfalling pipe. The vacuum degassing apparatus for molten glass is further comprised of a separating mechanism that separates a part of molten glass moving from the downfalling pipe to the downstream side pit, and a returning pipe that returns separated molten glass to the upstream side pit.
摘要:
First, a unilayer wiring board is fabricated, which has wiring layers formed in desired shapes on both sides of an insulating base member; and a metal bump formed on the wiring layer on one side of the insulating base member. Then, a desired number of unilayer boards are prepared and stacked up. On that case, the board disposed in the uppermost layer is prepared without having a metal bump. The boards are positioned and stacked up in such a manner that a metal bump of one of adjacent boards is connected to a corresponding wiring layer of the other board. Thereafter, resin is filled into gaps between the stacked boards, and insulating layers are formed on both sides of a multilayer board obtained through the above steps, in such a manner as to cover the entire surface except pad areas defined at predetermined positions on the wiring layers.
摘要:
A semiconductor package 100 is constructed of a semiconductor chip 110, a sealing resin 106 for sealing this semiconductor chip 110, and wiring 105 formed inside the sealing resin 106. And, the wiring 105 is constructed of pattern wiring 105b connected to the semiconductor chip 110 and also formed so as to be exposed to a lower surface 106b of the sealing resin 106, and a post part 105a formed so as to extend in a thickness direction of the sealing resin 106, the post part in which one end is connected to the pattern wiring 105b and also the other end is formed so as to be exposed to an upper surface 106a of the sealing resin 106.
摘要:
A wiring board includes an insulating layer in which a semiconductor chip is embedded, and a wiring structure connected to the semiconductor chip. A reinforcing member reinforcing the insulating layer is embedded in the insulating layer. This enables reduction in a thickness of the wiring board and a suppression of warpage of the wiring board.