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    Semiconductor chip structures with embedded thermal conductors and a thermal sink disposed over opposing substrate surfaces
    1.
    发明授权
    Semiconductor chip structures with embedded thermal conductors and a thermal sink disposed over opposing substrate surfaces 失效
    具有嵌入式热导体的半导体芯片结构和设置在相对基板表面上的散热器

    公开(公告)号：US06512292B1

    公开(公告)日：2003-01-28

    申请号：US09660270

    申请日：2000-09-12

    申请人： Douglas S. Armbrust ,  William F. Clark ,  William A. Klaasen ,  William T. Motsiff ,  Timothy D. Sullivan

    发明人： Douglas S. Armbrust ,  William F. Clark ,  William A. Klaasen ,  William T. Motsiff ,  Timothy D. Sullivan

    IPC分类号： H01L2312

    CPC分类号： H01L23/5222 ,  H01L23/3677 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2924/00

    摘要： Semiconductor chip structures are provided with embedded thermal conductors for removing heat from one or more electrically conductive circuit members thereof, wherein the circuit members are formed on one or more dielectric layers above a substrate, each layer having a low dielectric constant and a low thermal conductivity. One or more cooling posts, for example, multiple thermally conductive plugs, are selectively disposed within the semiconductor chip structure adjacent to one or more electrically conductive members and thermally coupled thereto so that heat produced by the members is transferred into and through the cooling posts for forwarding to the substrate and/or to an upper surface of the semiconductor chip structure. The backside of the substrate has a thermal sink thermally coupled thereto and electrically isolated from the substrate. The thermal sink includes one or more thermally conductive via structures embedded within the substrate and aligned to thermally contact to the cooling posts disposed above the substrate.

    摘要翻译： 半导体芯片结构设置有用于从一个或多个导电电路构件去除热量的嵌入式热导体，其中电路构件形成在衬底上方的一个或多个电介质层上，每层具有低介电常数和低热导率 。 一个或多个冷却柱，例如多个导热塞，被选择性地设置在半导体芯片结构内邻近一个或多个导电构件并与其热耦合，使得由构件产生的热量被传送到冷却柱中并通过冷却柱 转移到衬底和/或到半导体芯片结构的上表面。 衬底的背面具有热耦合到其上并与衬底电隔离的散热器。 散热器包括一个或多个热传导通孔结构，其嵌入衬底内并对准以与设置在衬底上方的冷却柱热接触。

    Semiconductor chip structures with embedded thermal conductors and a thermal sink disposed over opposing substrate surfaces
    2.
    发明授权
    Semiconductor chip structures with embedded thermal conductors and a thermal sink disposed over opposing substrate surfaces 失效
    具有嵌入式热导体的半导体芯片结构和设置在相对基板表面上的散热器

    公开(公告)号：US06773952B2

    公开(公告)日：2004-08-10

    申请号：US10243397

    申请日：2002-09-12

    申请人： Douglas S. Armbrust ,  William F. Clark ,  William A. Klaasen ,  William T. Motsiff ,  Timothy D. Sullivan

    发明人： Douglas S. Armbrust ,  William F. Clark ,  William A. Klaasen ,  William T. Motsiff ,  Timothy D. Sullivan

    IPC分类号： H01L2100

    CPC分类号： H01L23/5222 ,  H01L23/3677 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2924/00

    摘要： Semiconductor chip structures are provided with embedded thermal conductors for removing heat from one or more electrically conductive circuit members thereof, wherein the circuit members are formed on one or more dielectric layers above a substrate, each layer having a low dielectric constant and a low thermal conductivity. One or more cooling posts, for example, multiple thermally conductive plugs, are selectively disposed within the semiconductor chip structure adjacent to one or more electrically conductive members and thermally coupled thereto so that heat produced by the members is transferred into and through the cooling posts for forwarding to the substrate and/or to an upper surface of the semiconductor chip structure. The backside of the substrate has a thermal sink thermally coupled thereto and electrically isolated from the substrate. The thermal sink includes one or more thermally conductive via structures embedded within the substrate and aligned to thermally contact to the cooling posts disposed above the substrate.

    摘要翻译： 半导体芯片结构设置有用于从一个或多个导电电路构件去除热量的嵌入式热导体，其中电路构件形成在衬底上方的一个或多个电介质层上，每层具有低介电常数和低热导率 。 一个或多个冷却柱，例如多个导热塞，被选择性地设置在半导体芯片结构内邻近一个或多个导电构件并与其热耦合，使得由构件产生的热量被传送到冷却柱中并通过冷却柱 转移到衬底和/或到半导体芯片结构的上表面。 衬底的背面具有热耦合到其上并与衬底电隔离的散热器。 散热器包括一个或多个热传导通孔结构，其嵌入衬底内并对准以与设置在衬底上方的冷却柱热接触。

    Heat dissipation from IC interconnects
    3.
    发明授权
    Heat dissipation from IC interconnects 失效
    IC互连散热

    公开(公告)号：US06798066B1

    公开(公告)日：2004-09-28

    申请号：US10249910

    申请日：2003-05-16

    申请人： William T. Motsiff ,  Timothy D. Sullivan ,  Jean E. Wynne ,  Sally J. Yankee

    发明人： William T. Motsiff ,  Timothy D. Sullivan ,  Jean E. Wynne ,  Sally J. Yankee

    IPC分类号： H01L2348

    CPC分类号： H01L23/60 ,  H01L23/36 ,  H01L23/367 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention relates to dissipating heat from an interconnect formed in a low thermal conductivity dielectric in an integrated circuit apparatus. The integrated circuit apparatus includes integrated circuit devices interconnected by conductive interconnection metallurgy and input/output pads subject to electrostatic discharge events. At least one latent heat of transformation absorber is associated with at least one of the input/output pads for preventing the energy generated by an electrostatic discharge event from damaging the conductive interconnection metallurgy.

    摘要翻译： 本发明涉及从形成在集成电路装置中的低导热电介质中的互连件散热。 集成电路装置包括通过导电互连冶金互连的集成电路装置和经受静电放电事件的输入/输出垫。 至少一个变换吸收器的潜热与至少一个输入/输出焊盘相关联，用于防止由静电放电事件产生的能量损坏导电互连冶金。

    Array of alpha particle sensors
    6.
    发明授权
    Array of alpha particle sensors 失效
    α粒子传感器阵列

    公开(公告)号：US08647909B2

    公开(公告)日：2014-02-11

    申请号：US13357728

    申请日：2012-01-25

    申请人： Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

    发明人： Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

    IPC分类号： H01L21/00

    CPC分类号： H01L31/115 ,  H01L23/552 ,  H01L23/556 ,  H01L25/0657 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).

    摘要翻译： 辐射传感器或检测器阵列集成在三维半导体IC内。 传感器阵列相对靠近电路（例如，微处理器）的器件层定位，以防止电离辐射粒子的不利影响。 因此，辐射粒子与器件层相交的位置可以用粗精度（例如，在10微米以内）来计算。

    Micro-electro-mechanical-system temperature sensor
    8.
    发明授权
    Micro-electro-mechanical-system temperature sensor 失效
    微机电系统温度传感器

    公开(公告)号：US08480302B2

    公开(公告)日：2013-07-09

    申请号：US12892406

    申请日：2010-09-28

    申请人： Jason P. Gill ,  David L. Harmon ,  Timothy D. Sullivan

    发明人： Jason P. Gill ,  David L. Harmon ,  Timothy D. Sullivan

    IPC分类号： G01K5/00 ,  G01K7/00

    CPC分类号： G01K5/52

    摘要： The present invention provides a micro-electro-mechanical-system (MEMS) temperature sensor that employs a suspended spiral comprising a material with a positive coefficient of thermal expansion. The thermal expansion of the suspended spiral is guided to by a set of guideposts to provide a linear movement of the free end of the suspended spiral, which is converted to an electrical signal by a set of conductive rotor azimuthal fins that are interdigitated with a set of conductive stator azimuthal fins by measuring the amount of capacitive coupling therebetween. Real time temperature may thus be measured through the in-situ measurement of the capacitive coupling. Optionally, the MEMS temperature sensor may have a ratchet and a pawl to enable ex-situ measurement.

    摘要翻译： 本发明提供了一种微电子机械系统（MEMS）温度传感器，其采用悬浮螺旋，其包括具有正的热膨胀系数的材料。 悬挂螺旋的热膨胀由一组导轨引导以提供悬挂螺旋的自由端的线性运动，其被一组导电转子方位角翅片转换成电信号，所述导电转子方位角翅片与组相互指向 通过测量导电定子方位翅片之间的电容耦合量。 因此可以通过电容耦合的原位测量来测量实时温度。 可选地，MEMS温度传感器可以具有棘轮和棘爪以使得能够进行非原位测量。

    WIRING STRUCTURE AND METHOD OF FORMING THE STRUCTURE
    10.
    发明申请
    WIRING STRUCTURE AND METHOD OF FORMING THE STRUCTURE 有权
    导线结构及形成结构的方法

    公开(公告)号：US20120299188A1

    公开(公告)日：2012-11-29

    申请号：US13114079

    申请日：2011-05-24

    申请人： Fen Chen ,  Jeffrey P. Gambino ,  Anthony K. Stamper ,  Timothy D. Sullivan

    发明人： Fen Chen ,  Jeffrey P. Gambino ,  Anthony K. Stamper ,  Timothy D. Sullivan

    IPC分类号： H01L23/485 ,  H01L21/768

    CPC分类号： H01L21/76816 ,  H01L21/76843 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a wiring structure and method of forming the structure with a conductive diffusion barrier layer having a thick upper portion and thin lower portion. The thicker upper portion is located at the junction between the wiring structure and the adjacent dielectric materials. The thicker upper portion: (1) minimizes metal ion diffusion and, thereby TDDB; (2) allows a wire width to dielectric space width ratio that is optimal for low TDDB to be achieved at the top of the wiring structure; and (3) provides a greater surface area for via landing. The thinner lower portion: (1) allows a different wire width to dielectric space width ratio to be maintained in the rest of the wiring structure in order to balance other competing factors; (2) allows a larger cross-section of wire to reduce current density and, thereby reduce EM; and (3) avoids an increase in wiring structure resistivity.

    摘要翻译： 公开了一种具有导电扩散阻挡层的结构的布线结构和方法，所述导电扩散阻挡层具有较厚的上部和较薄的下部。 较厚的上部位于布线结构和相邻电介质材料之间的接合处。 较厚的上部：（1）最小化金属离子扩散，从而使TDDB; （2）允许在布线结构的顶部实现对于低TDDB最佳的电线宽度与电介质空间宽度比; 和（3）为通孔着陆提供更大的表面积。 较薄的下部：（1）允许在布线结构的其余部分中保持不同的导线宽度与电介质空间宽度比，以平衡其他竞争因素; （2）允许更大的导线截面减小电流密度，从而减少EM; 和（3）避免了布线结构电阻率的增加。