利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

28 条记录 (耗时 0.031 秒)

    Multi-zone resistive heater
    1.
    发明授权
    Multi-zone resistive heater 失效

    公开(公告)号：US06617553B2

    公开(公告)日：2003-09-09

    申请号：US10246865

    申请日：2002-09-19

    申请人： Henry Ho ,  Anqing Cui ,  Xiaoxiong Yuan

    发明人： Henry Ho ,  Anqing Cui ,  Xiaoxiong Yuan

    IPC分类号： H05B368

    CPC分类号： H01L21/67248 ,  H01L21/67103 ,  H01L21/67109

    摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element, and the second heating element is offset from the first heating element in a plane substantially parallel to at least one of the first plane and the second plane.

    Process chamber lid design with built-in plasma source for short lifetime species
    2.
    发明授权
    Process chamber lid design with built-in plasma source for short lifetime species 有权
    过程室盖设计，内置等离子体源，用于短寿命物种

    公开(公告)号：US09004006B2

    公开(公告)日：2015-04-14

    申请号：US13095720

    申请日：2011-04-27

    申请人： Chien-Teh Kao ,  Hyman W. H. Lam ,  Mei Chang ,  David T. Or ,  Nicholas R. Denny ,  Xiaoxiong Yuan

    发明人： Chien-Teh Kao ,  Hyman W. H. Lam ,  Mei Chang ,  David T. Or ,  Nicholas R. Denny ,  Xiaoxiong Yuan

    IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/505 ,  H01J37/32

    CPC分类号： C23C16/45536 ,  C23C16/45565 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/3244

    摘要： An apparatus and a method for depositing materials, and more particularly a vapor deposition chamber configured to deposit a material during a plasma-enhanced process are provided. In one embodiment a chamber comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly.

    摘要翻译： 提供一种用于沉积材料的装置和方法，更具体地，提供了在等离子体增强过程期间配置成沉积材料的气相沉积室。 在一个实施例中，室包括限定处理体积的室主体，设置在处理容积中并被配置为支撑一个或多个基板的基板支撑件，设置在基板支撑件上方的过程盖组件，其中处理盖组件具有等离子体腔 被配置为产生等离子体并且为处理体积提供一个或多个自由基物质，耦合到气体分配组件的RF（射频）功率源，与处理盖组件耦合的等离子体形成气体源，以及反应气体源 与工艺盖组件。

    VORTEX CHAMBER LIDS FOR ATOMIC LAYER DEPOSITION
    3.
    发明申请
    VORTEX CHAMBER LIDS FOR ATOMIC LAYER DEPOSITION 有权
    用于原子层沉积的VORTEX CHAMBER LIDS

    公开(公告)号：US20080107809A1

    公开(公告)日：2008-05-08

    申请号：US11923589

    申请日：2007-10-24

    申请人： Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven Kim ,  Schubert Chu ,  Paul Ma ,  Joseph Aubuchon

    发明人： Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven Kim ,  Schubert Chu ,  Paul Ma ,  Joseph Aubuchon

    IPC分类号： C23C16/455

    CPC分类号： C23C16/4404 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

    摘要： Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.

    摘要翻译： 本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。 在一个实施例中，提供了一种用于处理衬底的腔室，其包括腔室盖组件，该室盖组件包含沿腔室盖组件的中心部分处的中心轴线延伸的扩张通道，以及从膨胀通道延伸到周边部分的锥形底面 室盖组件。 锥形底表面的形状和尺寸可以基本上覆盖基板接收表面。 腔室盖组件还包括连接到气体通道的导管，另一导管与另一个气体通道连接，两个气体通道绕过扩张通道。 每个通道具有延伸到扩张通道中的多个入口，并且入口被定位成提供通过膨胀通道的圆形气流。

    Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces
    5.
    发明授权
    Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces 失效
    用于流动的分散板将用于化学气相沉积膜的化合物蒸发到半导体表面上

    公开(公告)号：US06302965B1

    公开(公告)日：2001-10-16

    申请号：US09638506

    申请日：2000-08-15

    申请人： Salvador Umotoy ,  Vincent Ku ,  Xiaoxiong Yuan ,  Lawrence Chung-Lai Lei

    发明人： Salvador Umotoy ,  Vincent Ku ,  Xiaoxiong Yuan ,  Lawrence Chung-Lai Lei

    IPC分类号： C23C1600

    CPC分类号： C23C16/45576 ,  C23C16/16 ,  C23C16/455

    摘要： A dispersion plate for evenly flowing at low pressure into a processing chamber vaporized material, such as a tungsten compound for deposition of metal layers onto a semiconductor, has a disc-like body with a center axis, an input face and an output face. The dispersion plate has a cup-like entrance along the center axis in its input face for receiving a stream of vaporized material and a plurality of passages for flow of vapor with each passage having a length and a diameter and extending radially from the entrance like the spokes of a wheel at inclined angles relative to the center axis from the input face to the output face. Two annular grooves are cut into the output face and intersect with the respective ends of the passages. The plate has a center hole with a flared diameter extending along the center axis from the entrance in the input face to the output face. The hole and plurality of passages are designed to have sufficiently large diameters so as to keep pressure drops low with respect to vapor flowing through the plate.

    摘要翻译： 用于在低压下均匀流动到处理室的分散板，例如用于将金属层沉积到半导体上的钨化合物的气化材料具有中心轴，输入面和输出面的盘状体。 分散板在其输入面中具有沿着中心轴线的杯状入口，用于接收气化材料流和多个用于蒸汽流动的通道，每个通道具有长度和直径并且从入口径向延伸，如 轮的轮辐相对于从输入面到输出面的中心轴线呈倾斜角。 两个环形槽被切割成输出面并与通道的相应端相交。 该板具有中心孔，该中心孔具有沿着中心轴线从输入面入口到输出面延伸的扩口直径。 孔和多个通道被设计成具有足够大的直径，以便相对于流过板的蒸气保持压力降低。

    Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition
    6.
    发明授权
    Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition 失效
    用于在化学气相沉积期间将各种前体材料蒸发并流动到半导体晶片上

    公开(公告)号：US06299692B1

    公开(公告)日：2001-10-09

    申请号：US09621335

    申请日：2000-07-21

    申请人： Vincent Ku ,  Ming Xi ,  Xiaoxiong Yuan ,  Anzhong Chang ,  Anh N. Nguyen

    发明人： Vincent Ku ,  Ming Xi ,  Xiaoxiong Yuan ,  Anzhong Chang ,  Anh N. Nguyen

    IPC分类号： C23C1600

    CPC分类号： C23C16/4485

    摘要： A vaporizer head for evenly flowing at low pressure into a processing chamber vaporized precursor compounds for deposition of metal and other layers onto a semiconductor, has a bulb-like body with a center axis, a lengthwise cavity, an input end and an output end. The cavity has an opening for receiving a stream of vaporized precursor compound. There are a plurality of passages for flow of vapor through the head, each passage having a length and a diameter. They extend radially from along and around the cavity like the spokes of a wheel at inclined angles relative to the center axis from the cavity to a tapered output surface of the head. The cavity has a well-like bottom for capturing any droplets or particles of precursor compound and preventing them from leaving the head except as vapor. The plurality of passages have sufficiently large diameters such that there is only a low pressure drop in the vapor flowing through the head.

    摘要翻译： 将用于在低压下均匀流动到处理室中的蒸发器头部具有用于将金属和其它层沉积到半导体上的蒸发的前体化合物具有具有中心轴，纵向腔，输入端和输出端的灯泡状体。 空腔具有用于接收蒸发的前体化合物流的开口。 存在多个用于蒸汽流过头部的通道，每个通道具有长度和直径。 它们相对于从中心轴线到中心轴线的倾斜角度，沿着腔体的周边和周围径向延伸，如同轮的轮辐一样沿径向延伸到头部的锥形输出表面。 空腔具有良好的底部，用于捕获前体化合物的任何液滴或颗粒，并防止它们离开头部，除了作为蒸气。 多个通道具有足够大的直径，使得在流过头部的蒸气中只有低压降。

    Chemical precursor ampoule for vapor deposition processes
    7.
    发明授权
    Chemical precursor ampoule for vapor deposition processes 失效
    用于气相沉积工艺的化学前体安瓿瓶

    公开(公告)号：US08146896B2

    公开(公告)日：2012-04-03

    申请号：US12263022

    申请日：2008-10-31

    申请人： Olkan Cuvalci ,  Dien-Yeh Wu ,  Xiaoxiong Yuan

    发明人： Olkan Cuvalci ,  Dien-Yeh Wu ,  Xiaoxiong Yuan

    IPC分类号： B01F3/04

    CPC分类号： C23C16/4482

    摘要： An apparatus for generating a gaseous chemical precursor is provided and contains a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending into the canister and having an inlet end and an outlet end, wherein the inlet end is coupled to the inlet port. The apparatus further contains a gas dispersion plate coupled to the outlet end of the inlet tube, wherein the gas dispersion plate is at an angle within a range from about 3° to about 80°, relative to a horizontal plane which is perpendicular to a vertical axis of the canister.

    摘要翻译： 提供了一种用于产生气态化学前体的设备，并且包括具有侧壁，顶部和底部的罐的罐，其中包含内部容积，与内部空间流体连通的入口端口和出口端口， 进入罐并具有入口端和出口端，其中入口端连接到入口端口。 该装置还包括耦合到入口管的出口端的气体分散板，其中气体分散板相对于垂直于垂直方向的水平面处于约3°至约80°的范围内 罐的轴线。

    Ceramic substrate support
    10.
    发明授权
    Ceramic substrate support 有权
    陶瓷基板支撑

    公开(公告)号：US06730175B2

    公开(公告)日：2004-05-04

    申请号：US10055634

    申请日：2002-01-22

    申请人： Joseph Yudovsky ,  Salvador P. Umotoy ,  Shamouil Shamouilian ,  Ron Rose ,  Rita Dukes ,  Xiaoxiong Yuan

    发明人： Joseph Yudovsky ,  Salvador P. Umotoy ,  Shamouil Shamouilian ,  Ron Rose ,  Rita Dukes ,  Xiaoxiong Yuan

    IPC分类号： H01L2100

    CPC分类号： C23C16/45521 ,  C23C16/4581 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/67092

    摘要： A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a ceramic body having an embedded heating element and a base plate. The base plate and the ceramic body define a channel therebetween adapted to supply purge gas to a perimeter of a substrate disposed on the support assembly. The base plate is fastened to the body by brazing, adhering, fastening, press fitting or by mating engaging portions of a retention device such as a bayonet fitting.

    摘要翻译： 提供了一种用于在处理期间支撑基板的基板支撑组件。 在一个实施例中，支撑组件包括具有嵌入式加热元件和基板的陶瓷体。 基板和陶瓷体在它们之间限定了一个通道，用于将净化气体供应到设置在支撑组件上的基板的周边。 基板通过钎焊，粘合，紧固，压配合或通过配合诸如卡口配件的保持装置的接合部分而紧固到主体。