公开(公告)号：US20080237808A1

公开(公告)日：2008-10-02

申请号：US12134861

申请日：2008-06-06

申请人： Hirotoshi Kubo ,  Yukari Shirahata ,  Shigehito Matsumoto ,  Masamichi Yamamuro ,  Koujiro Kameyama ,  Mitsuo Umemoto

发明人： Hirotoshi Kubo ,  Yukari Shirahata ,  Shigehito Matsumoto ,  Masamichi Yamamuro ,  Koujiro Kameyama ,  Mitsuo Umemoto

IPC分类号： H01L23/538 ,  H05K1/18

CPC分类号： H01L29/7322 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/4824 ,  H01L23/4951 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/17 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/91 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/66272 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0781 ,  H01L2924/12033 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.

摘要翻译： 公开了一种半导体器件，其中连接到有源区，集电极和基极焊盘电极的发射极焊盘电极形成在半导体衬底的表面上。 此外，在半导体衬底的背面形成有背面电极。 此外，连接到接地电位的发射极焊盘电极通过穿过半导体衬底的厚度方向的穿通电极而连接到背面电极。

公开(公告)号：US20060220178A1

公开(公告)日：2006-10-05

申请号：US11392802

申请日：2006-03-28

申请人： Hirotoshi Kubo ,  Yukari Shirahata ,  Shigehito Matsumoto ,  Masamichi Yamamuro ,  Koujiro Kameyama ,  Mitsuo Umemoto

发明人： Hirotoshi Kubo ,  Yukari Shirahata ,  Shigehito Matsumoto ,  Masamichi Yamamuro ,  Koujiro Kameyama ,  Mitsuo Umemoto

IPC分类号： H01L29/00

CPC分类号： H01L29/7322 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/4824 ,  H01L23/4951 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/17 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/91 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/66272 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0781 ,  H01L2924/12033 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.

摘要翻译： 公开了一种半导体器件，其中连接到有源区，集电极和基极焊盘电极的发射极焊盘电极形成在半导体衬底的表面上。 此外，在半导体衬底的背面形成有背面电极。 此外，连接到接地电位的发射极焊盘电极通过穿过半导体衬底的厚度方向的穿通电极而连接到背面电极。

公开(公告)号：US08076755B2

公开(公告)日：2011-12-13

申请号：US12134861

申请日：2008-06-06

申请人： Mitsuo Umemoto ,  Shigehito Matsumoto ,  Hirotoshi Kubo ,  Yukari Shirahata ,  Masamichi Yamamuro ,  Koujiro Kameyama

发明人： Mitsuo Umemoto ,  Shigehito Matsumoto ,  Hirotoshi Kubo ,  Yukari Shirahata ,  Masamichi Yamamuro ,  Koujiro Kameyama

IPC分类号： H01L29/66

CPC分类号： H01L29/7322 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/4824 ,  H01L23/4951 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/17 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/91 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/66272 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0781 ,  H01L2924/12033 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.

摘要翻译： 公开了一种半导体器件，其中连接到有源区，集电极和基极焊盘电极的发射极焊盘电极形成在半导体衬底的表面上。 此外，在半导体衬底的背面形成有背面电极。 此外，连接到接地电位的发射极焊盘电极通过穿过半导体衬底的厚度方向的穿通电极而连接到背面电极。

公开(公告)号：US07397128B2

公开(公告)日：2008-07-08

申请号：US11392802

申请日：2006-03-28

申请人： Hirotoshi Kubo ,  Yukari Shirahata ,  Shigehito Matsumoto ,  Masamichi Yamamuro ,  Koujiro Kameyama ,  Mitsuo Umemoto

发明人： Hirotoshi Kubo ,  Yukari Shirahata ,  Shigehito Matsumoto ,  Masamichi Yamamuro ,  Koujiro Kameyama ,  Mitsuo Umemoto

IPC分类号： H01L23/48

CPC分类号： H01L29/7322 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/4824 ,  H01L23/4951 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/17 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/91 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/66272 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0781 ,  H01L2924/12033 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.

摘要翻译： 公开了一种半导体器件，其中连接到有源区，集电极和基极焊盘电极的发射极焊盘电极形成在半导体衬底的表面上。 此外，在半导体衬底的背面形成有背面电极。 此外，连接到接地电位的发射极焊盘电极通过穿过半导体衬底的厚度方向的穿通电极而连接到背面电极。

公开(公告)号：US07750478B2

公开(公告)日：2010-07-06

申请号：US11808667

申请日：2007-06-12

申请人： Koujiro Kameyama ,  Akira Suzuki ,  Yoshio Okayama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

发明人： Koujiro Kameyama ,  Akira Suzuki ,  Yoshio Okayama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/12 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05599

摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

摘要翻译： 提供了可靠性提高的半导体器件及其制造方法。 本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板 电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径 靠近半导体衬底的背面的部分。

公开(公告)号：US07732925B2

公开(公告)日：2010-06-08

申请号：US11055707

申请日：2005-02-11

申请人： Yoshio Okayama ,  Akira Suzuki ,  Koujiro Kameyama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

发明人： Yoshio Okayama ,  Akira Suzuki ,  Koujiro Kameyama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

IPC分类号： H01L29/40

CPC分类号： H01L24/12 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05599

摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

摘要翻译： 提供了可靠性提高的半导体器件及其制造方法。 本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板 电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径 靠近半导体衬底的背面的部分。

公开(公告)号：US20050189637A1

公开(公告)日：2005-09-01

申请号：US11055707

申请日：2005-02-11

申请人： Yoshio Okayama ,  Akira Suzuki ,  Koujiro Kameyama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

发明人： Yoshio Okayama ,  Akira Suzuki ,  Koujiro Kameyama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/12 ,  H01L23/31 ,  H01L23/48 ,  H01L23/495

CPC分类号： H01L24/12 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05599

摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

摘要翻译： 提供了可靠性提高的半导体器件及其制造方法。 本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板 电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径 靠近半导体衬底的背表面的部分。

公开(公告)号：US20070249158A1

公开(公告)日：2007-10-25

申请号：US11808667

申请日：2007-06-12

申请人： Yoshio Okayama ,  Akira Suzuki ,  Koujiro Kameyama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

发明人： Yoshio Okayama ,  Akira Suzuki ,  Koujiro Kameyama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

IPC分类号： H01L21/4763

CPC分类号： H01L24/12 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05599

摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

摘要翻译： 提供了可靠性提高的半导体器件及其制造方法。 本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板 电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径 靠近半导体衬底的背面的部分。

公开(公告)号：US08552545B2

公开(公告)日：2013-10-08

申请号：US11085265

申请日：2005-03-22

申请人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yukiharu Akiyama

发明人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yukiharu Akiyama

IPC分类号： H01L23/02 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/1134 ,  H01L2224/13021 ,  H01L2224/13025 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A manufacturing method for a semiconductor device includes: the step of preparing a semiconductor chip which is provided with a functional element formed on a front surface side of a semiconductor substrate, a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate, a front surface side connection member which protrudes from the front surface, and a rear surface side connection member which has a joining surface within a recess that is formed in a rear surface; the step of preparing a solid-state device where a solid-state device side connection member for connection to the front surface side connection member is formed on one surface; and the joining step of making the front surface of the semiconductor chip face the first surface of the solid-state device by holding the rear surface of the semiconductor chip, and of joining the front surface side connection member to the solid-state device side connection member.

摘要翻译： 半导体装置的制造方法包括：准备半导体芯片的步骤，该半导体芯片设置有形成在半导体基板的正面侧的功能元件，放置在贯通半导体基板的通孔内的馈通电极， 从前表面突出的前表面侧连接构件和在形成在后表面的凹部内具有接合表面的后表面侧连接构件; 制备固体装置的步骤，其中在一个表面上形成用于连接到前表面侧连接构件的固态装置侧连接构件; 并且通过保持半导体芯片的后表面并使前表面侧连接构件连接到固态器件侧连接而使半导体芯片的前表面面向固态器件的第一表面的接合步骤 会员。

公开(公告)号：US07638421B2

公开(公告)日：2009-12-29

申请号：US11717010

申请日：2007-03-13

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L21/44

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A manufacturing method for a semiconductor device, including the steps of: forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes; forming a diffusion prevention plug of a first metal in the vicinity of the opening in the passivation film; supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer of the second metal; forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug; supplying a third metal material into the opening in the resist film so as to form a protrusion electrode of the third metal; removing the resist film after the step of forming a protrusion electrode; and removing the seed layer after the step of forming a protrusion electrode.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：形成覆盖形成有电极的半导体衬底的表面的钝化膜，其中形成有开口以从电极中露出预定电极; 在钝化膜中的开口附近形成第一金属的防扩散插塞; 将第二金属材料供给到已经形成有扩散防止塞的半导体基板的表面上，以形成第二金属的籽晶层; 形成覆盖种子层并形成有开口的抗蚀剂膜，以暴露防扩散插塞上的籽晶层的预定区域; 将第三金属材料供应到所述抗蚀剂膜的开口中，以形成所述第三金属的突出电极; 在形成突起电极的步骤之后去除抗蚀剂膜; 以及在形成突起电极的步骤之后去除种子层。