公开(公告)号：US12230582B2

公开(公告)日：2025-02-18

申请号：US18368929

申请日：2023-09-15

Applicant: Intel Corporation

Inventor： John S. Guzek

IPC: H01L23/538 ,  H01L21/56 ,  H01L23/13 ,  H01L23/31 ,  H01L23/48 ,  H01L23/498 ,  H01L25/065 ,  H01L25/07

Abstract: Integrated circuit (IC) packages having a through-via interposer with an embedded die, as well as related structures, devices, and methods, are disclosed herein. For example, in some embodiments, an IC package may include a through-via interposer with an embedded die, the through-via connections having front to back conductivity. In some embodiments, a die may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the embedded die. In some embodiments, a second IC package in a package-on-package (PoP) arrangement may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the conductive vias.

公开(公告)号：US11515248B2

公开(公告)日：2022-11-29

申请号：US17009308

申请日：2020-09-01

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC: H01L25/18 ,  H01L23/522 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/538 ,  H01L21/56

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US20190189564A1

公开(公告)日：2019-06-20

申请号：US16327944

申请日：2016-09-30

Applicant: Intel Corporation

Inventor： John S. Guzek

IPC: H01L23/538 ,  H01L23/13 ,  H01L23/498 ,  H01L21/56 ,  H01L25/065

CPC classification number: H01L23/5389 ,  H01L21/56 ,  H01L21/568 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/48 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/07 ,  H01L2224/16 ,  H01L2924/18161

Abstract: Integrated circuit (IC) packages having a through-via interposer with an embedded die, as well as related structures, devices, and methods, are disclosed herein. For example, in some embodiments, an IC package may include a through-via interposer with an embedded die, the through-via connections having front to back conductivity. In some embodiments, a die may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the embedded die. In some embodiments, a second IC package in a package-on-package (PoP) arrangement may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the conductive vias.

公开(公告)号：US20180005989A1

公开(公告)日：2018-01-04

申请号：US15196937

申请日：2016-06-29

Applicant: Intel Corporation

Inventor： Saikumar Jayaraman ,  John S. Guzek ,  Yidnekachew S. Mekonnen

IPC: H01L25/065 ,  H01L21/768 ,  H01L21/56 ,  H01L23/48 ,  H01L23/522 ,  H01L23/00 ,  H01L25/00 ,  H01L23/31

CPC classification number: H01L25/0657 ,  H01L21/563 ,  H01L21/76838 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/481 ,  H01L23/5226 ,  H01L24/11 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0231 ,  H01L2224/0237 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/85815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/18161

Abstract: Apparatuses, methods and systems associated with integrated circuit (IC) package design are disclosed herein. An IC package stack may include a first IC package and a second IC package. The first IC package may include a first die and a first redistribution layer that communicatively couples contacts on the first side of the first IC package to the first die and to contacts on a second side of the first IC package, the second side opposite to the first side. The second IC package may be mounted to the second side of the first IC package. The second IC package may include a second die and a second redistribution layer that communicatively couples contacts on a side of the second IC package to the second die, the contacts of the second IC package communicatively coupled to the contacts on the second side of the first IC package.

公开(公告)号：US09713255B2

公开(公告)日：2017-07-18

申请号：US14184575

申请日：2014-02-19

Applicant: INTEL CORPORATION

Inventor： Adel A. Elsherbini ,  Ravindranath Mahajan ,  John S. Guzek ,  Nitin A. Deshpande

IPC: H01L23/13 ,  H05K1/14 ,  H01L23/552 ,  H01L25/00 ,  H01L25/065 ,  H01L23/498 ,  H05K1/02 ,  H05K3/36

CPC classification number: H05K1/147 ,  H01L23/13 ,  H01L23/49833 ,  H01L23/552 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2924/15192 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K3/361 ,  H05K2201/09245 ,  H05K2201/09681 ,  Y10T29/49126

Abstract: Embodiments of the present disclosure are directed towards electro-magnetic interference (EMI) shielding techniques and configurations. In one embodiment, an apparatus includes a first substrate, a die having interconnect structures coupled with the first substrate to route input/output (I/O) signals between the die and the first substrate and a second substrate coupled with the first substrate, wherein the die is disposed between the first substrate and the second substrate and at least one of the first substrate and the second substrate include traces configured to provide electro-magnetic interference (EMI) shielding for the die. Other embodiments may be described and/or claimed.

公开(公告)号：US09679843B2

公开(公告)日：2017-06-13

申请号：US15049500

申请日：2016-02-22

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravindranath V. Mahajan

IPC: H01L23/48 ,  H01L23/522 ,  H01L25/00 ,  H01L23/538 ,  H01L25/065 ,  H01L21/56 ,  H01L23/00 ,  H01L25/18

CPC classification number: H01L23/5226 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US20170125351A1

公开(公告)日：2017-05-04

申请号：US15346568

申请日：2016-11-08

Applicant: INTEL CORPORATION

Inventor： Deepak V. Kulkarni ,  Russell K. Mortensen ,  John S. Guzek

IPC: H01L23/538 ,  H01L49/02 ,  H01L21/768 ,  H01L23/48 ,  H01L21/48

CPC classification number: H01L23/5389 ,  H01L21/4857 ,  H01L21/50 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/485 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/19 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/50 ,  H01L28/40 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/92133 ,  H01L2224/92224 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/00

Abstract: Embodiments of the present disclosure are directed towards package assemblies, as well as methods for forming package assemblies and systems incorporating package assemblies. A package assembly may include a substrate including a plurality of build-up layers, such as bumpless build-up layer (BBUL). In various embodiments, electrical routing features may be disposed on an outer surface of the substrate. In various embodiments, a primary logic die and a second die or capacitor may be embedded in the plurality of build-up layers. In various embodiments, an electrical path may be defined in the plurality of build-up layers to route electrical power or a ground signal between the second die or capacitor and the electrical routing features, bypassing the primary logic die.

公开(公告)号：US09406618B2

公开(公告)日：2016-08-02

申请号：US14305439

申请日：2014-06-16

Applicant: Intel Corporation

Inventor： John S. Guzek ,  Ravi K. Nalla ,  Javier Solo Gonzalez ,  Drew Delaney ,  Suresh Pothukuchi ,  Mohit Mamodia ,  Edward Zarbock ,  Johanna M. Swan

IPC: H01L23/538 ,  H01L23/498 ,  H01L23/48 ,  H01L23/00 ,  H01L25/03 ,  H01L25/065 ,  H01L25/18

CPC classification number: H01L23/5384 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/24226 ,  H01L2224/48137 ,  H01L2224/48472 ,  H01L2224/73259 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An apparatus includes a coreless substrate with a through-silicon via (TSV) embedded die that is integral to the coreless substrate. The apparatus includes a subsequent die that is coupled to the TSV die and that is disposed above the coreless substrate.

Abstract translation: 一种装置包括具有与无芯基板成一体的贯通硅通孔（TSV）嵌入管芯的无芯基板。 该设备包括连接到TSV管芯并且设置在无芯基板之上的后续管芯。

公开(公告)号：US09397071B2

公开(公告)日：2016-07-19

申请号：US14102757

申请日：2013-12-11

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  John S. Guzek ,  Johanna M. Swan ,  Christopher J. Nelson ,  Nitin A. Deshpande ,  William J. Lambert ,  Charles A. Gealer ,  Feras Eid ,  Islam A. Salama ,  Kemal Aygun ,  Sasha N. Oster ,  Tyler N. Osborn

IPC: H05K7/00 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/538 ,  H05K1/18

CPC classification number: H01L25/16 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5387 ,  H01L24/50 ,  H01L24/86 ,  H01L25/00 ,  H01L25/0655 ,  H01L2224/0405 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/29078 ,  H01L2224/86203 ,  H01L2224/86815 ,  H05K1/185 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.

Abstract translation: 本说明书的微电子封装可以包括具有与其电连接的至少一行连接结构的第一微电子器件和具有与其电连接的至少一排连接结构的第二微电子器件，其中所述至少一个 第一微电子器件行与X方向上的至少一个第二微电子器件行内的对应连接结构对准。 包括具有在互连衬底的第一表面上沿x方向延伸的多个电隔离导电迹线的互连衬底的互连可以附接到所述至少一个第一微电子器件连接结构行和所述至少一个第二微电子器件 连接结构行，使得至少一个互连导电迹线形成第一微电子器件连接结构与其对应的第二微电子器件连接结构之间的连接。

公开(公告)号：US20160197037A1

公开(公告)日：2016-07-07

申请号：US15049500

申请日：2016-02-22

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravindranath V. Mahajan

IPC: H01L23/522 ,  H01L25/065 ,  H01L23/00

CPC classification number: H01L23/5226 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.