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    Semiconductor physical quantity sensor
    1.
    发明授权
    Semiconductor physical quantity sensor 有权
    半导体物理量传感器

    公开(公告)号：US06450031B1

    公开(公告)日：2002-09-17

    申请号：US09625860

    申请日：2000-07-26

    申请人： Minekazu Sakai ,  Minoru Murata ,  Seiki Aoyama ,  Youko Nakagawa

    发明人： Minekazu Sakai ,  Minoru Murata ,  Seiki Aoyama ,  Youko Nakagawa

    IPC分类号： G01P1500

    CPC分类号： G01P15/125 ,  B81B3/0086 ,  B81B2201/0235 ,  B81B2203/0109 ,  B81B2203/051 ,  G01P15/0802 ,  G01P2015/0814

    摘要： A semiconductor physical quantity sensor from which a stable sensor output can be obtained even when the usage environment changes. A silicon thin film is disposed on an insulating film on a supporting substrate, and a bridge structure having a weight part and moving electrodes and cantilever structures having fixed electrodes are formed as separate sections from this silicon thin film. The moving electrodes provided on the weight part and the cantilevered fixed electrodes are disposed facing each other. Slits are formed at root portions of the cantilevered fixed electrodes at the fixed ends thereof, and the width W1 of the root portions is thereby made narrower than the width W2 of the fixed electrodes proper. As a result, the transmission of warp of the supporting substrate to the cantilevered fixed electrodes is suppressed.

    摘要翻译： 一种半导体物理量传感器，即使在使用环境变化的情况下也能够获得稳定的传感器输出。 将硅薄膜设置在支撑基板上的绝缘膜上，并且具有重量部分的电桥结构和具有固定电极的移动电极和悬臂结构形成为与该硅薄膜分开的部分。 设置在重量部分和悬臂固定电极上的移动电极彼此面对地设置。 在悬臂固定电极的固定端的根部处形成狭缝，从而使根部的宽度W1比固定电极本体的宽度W2窄。 结果，抑制了支撑基板的翘曲向悬臂固定电极的传递。

    Semiconductor physical quantity sensor including frame-shaped beam surrounded by groove
    4.
    发明授权
    Semiconductor physical quantity sensor including frame-shaped beam surrounded by groove 有权

    公开(公告)号：US06430999B1

    公开(公告)日：2002-08-13

    申请号：US09818624

    申请日：2001-03-28

    申请人： Minoru Murata ,  Minekazu Sakai

    发明人： Minoru Murata ,  Minekazu Sakai

    IPC分类号： G01P1500

    摘要： A semiconductor physical quantity sensor has a beam connecting a movable portion and a support substrate for displacing the movable portion in a displacement direction. The beam has a rectangular frame shape with a hollow portion and is surrounded by a groove. The groove has opposing intervals at both sides of the beam in the displacement direction, and the opposing intervals are equal to an interval of the hollow portion in the displacement direction. Accordingly, etching rates at the groove and the hollow portion become approximately equal to each other, reducing processing variation of the beam.

    Semiconductor physical quantity sensor
    6.
    发明授权
    Semiconductor physical quantity sensor 有权
    半导体物理量传感器

    公开(公告)号：US06250165B1

    公开(公告)日：2001-06-26

    申请号：US09239781

    申请日：1999-01-29

    申请人： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

    发明人： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

    IPC分类号： G01L900

    CPC分类号： B81C1/00158 ,  B81C2201/014 ,  G01L9/0042 ,  G01P15/0802 ,  G01P2015/0814

    摘要： A semiconductor physical quantity sensor has a P-type semiconductor substrate and an N-type semiconductor layer formed on a main surface of the P-type semiconductor substrate. A displaceable portion is formed by electrochemically etching the P-type semiconductor substrate from a side of the main surface. At that time, a buried insulation film formed to penetrate the N-type semiconductor layer and to extend into the P-type semiconductor substrate is used as a stopper for the etching. Accordingly, an etched region can be restricted by the buried insulation film, so that the displaceable portion can be precisely formed.

    摘要翻译： 半导体物理量传感器具有P型半导体衬底和形成在P型半导体衬底的主表面上的N型半导体层。 通过从主表面的一侧电化学蚀刻P型半导体衬底形成位移部分。 此时，形成为穿透N型半导体层并延伸到P型半导体衬底中的掩埋绝缘膜用作蚀刻的阻挡层。 因此，可以通过埋入绝缘膜来限制蚀刻区域，从而能够精确地形成位移部。

    Capacitive acceleration sensor
    9.
    发明授权
    Capacitive acceleration sensor 有权
    电容式加速度传感器

    公开(公告)号：US06792805B2

    公开(公告)日：2004-09-21

    申请号：US10369198

    申请日：2003-02-20

    申请人： Minoru Murata ,  Minekazu Sakai

    发明人： Minoru Murata ,  Minekazu Sakai

    IPC分类号： G01P15125

    CPC分类号： G01P15/125 ,  G01P2015/0814

    摘要： A capacitive acceleration sensor includes a supporting substrate, a movable member, and two fixed members. The movable member moves in response to a force that acts on the movable member. Each fixed member is stationary under the force. Two capacitances are formed between the movable member and the fixed members. One of the capacitances increases while the other decreases when the movable member moves in response to the force. The force includes a substantially constant force and a variable force when an acceleration is measured using the sensor. The variable force is proportional to the acceleration. The acceleration is measured on the basis of the difference between the capacitances. The capacitances are different from each other when the force that acts on the movable member is zero to reduce the difference between the capacitances that corresponds to the substantially constant force.

    摘要翻译： 电容式加速度传感器包括支撑基板，可移动部件和两个固定部件。 可移动构件响应于作用在可动构件上的力移动。 每个固定构件在力作用下是静止的。 在可动构件和固定构件之间形成两个电容。 当可动构件响应于力而移动时，电容之一增加而另一个减小。 当使用传感器测量加速度时，该力包括基本恒定的力和可变的力。 可变力与加速度成比例。 基于电容之差测量加速度。 当作用在可动构件上的力为零时，电容彼此不同，以减小对应于基本恒定的力的电容之间的差异。

    Semiconductor physical quantity sensor
    10.
    发明授权
    Semiconductor physical quantity sensor 有权
    半导体物理量传感器

    公开(公告)号：US06494096B2

    公开(公告)日：2002-12-17

    申请号：US09801917

    申请日：2001-03-09

    申请人： Minekazu Sakai ,  Minoru Murata

    发明人： Minekazu Sakai ,  Minoru Murata

    IPC分类号： G01P15125

    CPC分类号： B81B3/0008 ,  B81B2201/0235 ,  G01P15/125 ,  G01P2015/0814

    摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable electrode to a first or second fixed electrode due to an electrostatic attracting force generated therebetween. The sensor has a weight portion and movable electrodes formed on both sides of which, and first and second fixed electrodes each engaging with the each of the movable electrodes. Each of the first and second fixed electrodes is disposed in parallel with each of the movable electrodes so that side faces thereof determine a detection interval and non-detection interval larger than the detection interval with side faces of adjoining two of the movable electrodes. Protrusions are formed on both of the side faces of each of the first and second fixed electrodes. These protrusions prevent the movable electrodes from adhering to the first or second fixed electrode in both of the detection interval and non-detection interval.

    摘要翻译： 一种半导体加速度传感器，其防止由于其间产生的静电吸引力而将可动电极粘附到第一或第二固定电极。 该传感器具有一个配重部分和形成在其两侧的可动电极，并且每个可移动电极各自配置有第一和第二固定电极。 第一固定电极和第二固定电极中的每一个与每个可动电极平行地设置，使得其侧面确定相邻两个可动电极的侧面的检测间隔和大于检测间隔的非检测间隔。 突起形成在第一和第二固定电极中的每一个的两个侧面上。 这些突起在检测间隔和非检测间隔中都防止可动电极粘附到第一或第二固定电极。