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公开(公告)号:US08816509B2
公开(公告)日:2014-08-26
申请号:US13733481
申请日:2013-01-03
发明人: Ji-Seok Hong , Kwang-chul Choi , Sangwon Kim , Hyun-Jung Song , Eun-Kyoung Choi
IPC分类号: H01L23/48 , H01L23/52 , H01L29/40 , H01L23/02 , H01L23/00 , H01L21/56 , H01L23/29 , H01L25/065 , H01L25/00 , H01L23/31
CPC分类号: H01L23/29 , H01L21/561 , H01L21/563 , H01L23/3114 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/131 , H01L2224/16146 , H01L2224/29017 , H01L2224/29036 , H01L2224/29099 , H01L2224/2929 , H01L2224/293 , H01L2224/33051 , H01L2224/33505 , H01L2224/73104 , H01L2224/81191 , H01L2224/81201 , H01L2224/83104 , H01L2224/83191 , H01L2224/83986 , H01L2224/84201 , H01L2224/9211 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/181 , H01L2224/81 , H01L2924/00014 , H01L2224/83 , H01L2924/0665 , H01L2924/01014 , H01L2924/014 , H01L2924/00012
摘要: A semiconductor package includes first and second semiconductor elements electrically interconnected by a connection structure. The first and second semiconductor elements are joined by a protection structure that includes an adhesive layer surrounded by a retention layer.
摘要翻译: 半导体封装包括通过连接结构电互连的第一和第二半导体元件。 第一和第二半导体元件通过保护结构连接,保护结构包括由保持层包围的粘合剂层。
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公开(公告)号:US09406592B2
公开(公告)日:2016-08-02
申请号:US14735300
申请日:2015-06-10
发明人: Nico Kohl , Martin Metzler , Sven Egelkraut , Markus Leicht
IPC分类号: H01L23/495 , H01L23/00 , H01L23/498
CPC分类号: H01L23/49544 , H01L23/3735 , H01L23/495 , H01L23/49548 , H01L23/49838 , H01L23/49844 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/35 , H01L24/37 , H01L24/40 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/92 , H01L2224/29339 , H01L2224/32227 , H01L2224/32245 , H01L2224/33181 , H01L2224/352 , H01L2224/37011 , H01L2224/37013 , H01L2224/37147 , H01L2224/3756 , H01L2224/37639 , H01L2224/4001 , H01L2224/4007 , H01L2224/40095 , H01L2224/40106 , H01L2224/40221 , H01L2224/40225 , H01L2224/40227 , H01L2224/40475 , H01L2224/40499 , H01L2224/73263 , H01L2224/83191 , H01L2224/83192 , H01L2224/83201 , H01L2224/83203 , H01L2224/83205 , H01L2224/83385 , H01L2224/83801 , H01L2224/83825 , H01L2224/8384 , H01L2224/8385 , H01L2224/84201 , H01L2224/84203 , H01L2224/84205 , H01L2224/84385 , H01L2224/84801 , H01L2224/84825 , H01L2224/8484 , H01L2224/8485 , H01L2224/92142 , H01L2224/92246 , H01L2924/00015 , H01L2924/13055 , H01L2924/13091 , H01L2924/351 , H01L2924/00 , H01L2224/48 , H01L2924/00014 , H01L2924/0105 , H01L2924/01047 , H01L2924/00012
摘要: A power semiconductor circuit includes at least one semiconductor having at least one contact area, and at least one bonding conductor strip having at least one contact region fastened on at least one of the contact areas. The contact region of the bonding conductor strip includes cutouts.
摘要翻译: 功率半导体电路包括至少一个具有至少一个接触区域的半导体,以及至少一个接合导体条,其具有紧固在至少一个接触区域上的至少一个接触区域。 接合导体条的接触区域包括切口。
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公开(公告)号:US20130193588A1
公开(公告)日:2013-08-01
申请号:US13733481
申请日:2013-01-03
发明人: Ji-Seok Hong , Kwang-chul Choi , Sangwon Kim , Hyun-Jung Song , Eun-Kyoung Choi
IPC分类号: H01L23/29
CPC分类号: H01L23/29 , H01L21/561 , H01L21/563 , H01L23/3114 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/131 , H01L2224/16146 , H01L2224/29017 , H01L2224/29036 , H01L2224/29099 , H01L2224/2929 , H01L2224/293 , H01L2224/33051 , H01L2224/33505 , H01L2224/73104 , H01L2224/81191 , H01L2224/81201 , H01L2224/83104 , H01L2224/83191 , H01L2224/83986 , H01L2224/84201 , H01L2224/9211 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/181 , H01L2224/81 , H01L2924/00014 , H01L2224/83 , H01L2924/0665 , H01L2924/01014 , H01L2924/014 , H01L2924/00012
摘要: A semiconductor package includes first and second semiconductor elements electrically interconnected by a connection structure. The first and second semiconductor elements are joined by a protection structure that includes an adhesive layer surrounded by a retention layer.
摘要翻译: 半导体封装包括通过连接结构电互连的第一和第二半导体元件。 第一和第二半导体元件通过保护结构连接,保护结构包括由保持层包围的粘合剂层。
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4.
公开(公告)号:US20170092574A1
公开(公告)日:2017-03-30
申请号:US15276623
申请日:2016-09-26
发明人: Florian WAGNER , Hartmut Kulas
IPC分类号: H01L23/498 , H01L23/29 , H01L21/56 , H01L23/31 , H01L23/00
CPC分类号: H01L23/49838 , H01L21/50 , H01L21/56 , H01L23/293 , H01L23/3121 , H01L24/37 , H01L24/40 , H01L24/84 , H01L25/072 , H01L25/18 , H01L2224/32225 , H01L2224/37599 , H01L2224/40221 , H01L2224/84201 , H01L2224/8484 , H01L2924/00014 , H01L2924/0685 , H01L2924/07025 , H01L2924/1203 , H01L2924/13055 , H01L2924/13091 , H01L2224/37099
摘要: A method for producing a power-electronics switching device and a power electronic switching device produced thereby. In the power-electronics switching device, a power semiconductor component is arranged on a first region of a conductor track of a substrate. An insulating film comprising a cutout is then provided, wherein an overlap region of the insulating film, which overlap region is adjacent to the cutout, is designed to cover an edge region of the power semiconductor component. This is followed by arranging the insulating film on the substrate, with the power semiconductor component arranged on it, in such a way that the power semiconductor component is covered on all sides of its edge region by the covering region of the insulating film, wherein a further section of the insulating film covers parts of one of the conductor tracks. Finally, the connecting device is arranged.
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5.
公开(公告)号:US20150357303A1
公开(公告)日:2015-12-10
申请号:US14735300
申请日:2015-06-10
发明人: Nico Kohl , Martin Metzler , Sven Egelkraut , Markus Leicht
IPC分类号: H01L23/00 , H01L23/498
CPC分类号: H01L23/49544 , H01L23/3735 , H01L23/495 , H01L23/49548 , H01L23/49838 , H01L23/49844 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/35 , H01L24/37 , H01L24/40 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/92 , H01L2224/29339 , H01L2224/32227 , H01L2224/32245 , H01L2224/33181 , H01L2224/352 , H01L2224/37011 , H01L2224/37013 , H01L2224/37147 , H01L2224/3756 , H01L2224/37639 , H01L2224/4001 , H01L2224/4007 , H01L2224/40095 , H01L2224/40106 , H01L2224/40221 , H01L2224/40225 , H01L2224/40227 , H01L2224/40475 , H01L2224/40499 , H01L2224/73263 , H01L2224/83191 , H01L2224/83192 , H01L2224/83201 , H01L2224/83203 , H01L2224/83205 , H01L2224/83385 , H01L2224/83801 , H01L2224/83825 , H01L2224/8384 , H01L2224/8385 , H01L2224/84201 , H01L2224/84203 , H01L2224/84205 , H01L2224/84385 , H01L2224/84801 , H01L2224/84825 , H01L2224/8484 , H01L2224/8485 , H01L2224/92142 , H01L2224/92246 , H01L2924/00015 , H01L2924/13055 , H01L2924/13091 , H01L2924/351 , H01L2924/00 , H01L2224/48 , H01L2924/00014 , H01L2924/0105 , H01L2924/01047 , H01L2924/00012
摘要: A power semiconductor circuit includes at least one semiconductor having at least one contact area, and at least one bonding conductor strip having at least one contact region fastened on at least one of the contact areas. The contact region of the bonding conductor strip includes cutouts.
摘要翻译: 功率半导体电路包括至少一个具有至少一个接触区域的半导体,以及至少一个接合导体条,其具有紧固在至少一个接触区域上的至少一个接触区域。 接合导体条的接触区域包括切口。
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