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公开(公告)号:US09099541B2
公开(公告)日:2015-08-04
申请号:US14170062
申请日:2014-01-31
发明人: Ji Hwang Kim , Sunpil Youn , Sangwon Kim , Kwang-chul Choi , Tae Hong Min
IPC分类号: H01L21/768 , H01L23/31 , H01L23/36 , H01L23/48 , H01L21/56 , H01L23/498
CPC分类号: H01L21/76898 , H01L21/563 , H01L21/768 , H01L23/3128 , H01L23/3135 , H01L23/36 , H01L23/481 , H01L23/49816 , H01L2224/02372 , H01L2224/0401 , H01L2224/0557 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2225/06568 , H01L2924/00014 , H01L2924/15311 , H01L2924/00 , H01L2224/05552
摘要: A semiconductor device includes a substrate having a first side and a second side such that the first and second sides face each other, a through via plug penetrating the substrate, an insulating film liner, and an antipollution film. The insulating film liner is between the through via plug and the substrate and the insulating film liner has a recessed surface with respect to the second side. The antipollution film covers the second side and the antipollution film is on the recessed surface and between the through via plug and the substrate.
摘要翻译: 半导体器件包括具有第一侧和第二侧的基板,使得第一和第二面彼此面对,贯穿基板的通孔塞,绝缘膜衬垫和防污染膜。 绝缘膜衬垫位于通孔插塞和衬底之间,并且绝缘膜衬套相对于第二侧具有凹陷表面。 防污染膜覆盖第二面,防污染膜位于凹陷表面上,并且在通孔插塞和基底之间。
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公开(公告)号:US09595446B2
公开(公告)日:2017-03-14
申请号:US14150906
申请日:2014-01-09
发明人: Chungsun Lee , Jung-Hwan Kim , Kwang-chul Choi , Un-Byoung Kang , Jeon Il Lee
IPC分类号: H01L21/46 , H01L21/302 , H01L21/683 , H01L21/02 , H01L23/00
CPC分类号: H01L21/302 , H01L21/02057 , H01L21/6835 , H01L21/6836 , H01L24/03 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/92 , H01L24/94 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/03002 , H01L2224/036 , H01L2224/0401 , H01L2224/13025 , H01L2224/16145 , H01L2224/16146 , H01L2224/16227 , H01L2224/17181 , H01L2224/92 , H01L2224/9222 , H01L2224/92222 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/15311 , H01L2224/11 , H01L2224/03 , H01L2924/00014 , H01L2221/68304 , H01L21/304 , H01L2221/68368 , H01L21/78 , H01L2224/81
摘要: Methods processing substrates are provided. The method may include providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting glue layer and thermosetting release layers provided on opposing sides of the thermosetting glue layer.
摘要翻译: 提供了处理衬底的方法。 该方法可以包括在衬底和载体之间提供结合层,以将衬底粘合到载体上,在衬底被载体支撑的同时处理衬底,以及去除结合层以使衬底与载体分离。 接合层可以包括热固性胶层和设置在热固性胶层的相对侧上的热固性剥离层。
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公开(公告)号:US20130193588A1
公开(公告)日:2013-08-01
申请号:US13733481
申请日:2013-01-03
发明人: Ji-Seok Hong , Kwang-chul Choi , Sangwon Kim , Hyun-Jung Song , Eun-Kyoung Choi
IPC分类号: H01L23/29
CPC分类号: H01L23/29 , H01L21/561 , H01L21/563 , H01L23/3114 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/131 , H01L2224/16146 , H01L2224/29017 , H01L2224/29036 , H01L2224/29099 , H01L2224/2929 , H01L2224/293 , H01L2224/33051 , H01L2224/33505 , H01L2224/73104 , H01L2224/81191 , H01L2224/81201 , H01L2224/83104 , H01L2224/83191 , H01L2224/83986 , H01L2224/84201 , H01L2224/9211 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/181 , H01L2224/81 , H01L2924/00014 , H01L2224/83 , H01L2924/0665 , H01L2924/01014 , H01L2924/014 , H01L2924/00012
摘要: A semiconductor package includes first and second semiconductor elements electrically interconnected by a connection structure. The first and second semiconductor elements are joined by a protection structure that includes an adhesive layer surrounded by a retention layer.
摘要翻译: 半导体封装包括通过连接结构电互连的第一和第二半导体元件。 第一和第二半导体元件通过保护结构连接,保护结构包括由保持层包围的粘合剂层。
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公开(公告)号:US09412636B2
公开(公告)日:2016-08-09
申请号:US14682231
申请日:2015-04-09
发明人: Chungsun Lee , Jung-Seok Ahn , Kwang-chul Choi , Un-Byoung Kang , Jung-Hwan Kim , Joonsik Sohn , Jeon Il Lee
IPC分类号: H01L21/58 , H01L21/683 , H01L21/304 , B32B37/12 , B32B37/18 , B32B37/24 , B32B37/26 , B32B38/04 , B32B38/10 , B32B38/16 , H01L21/02 , H01L21/768 , H01L23/00
CPC分类号: H01L21/6835 , B32B37/1284 , B32B37/18 , B32B37/24 , B32B37/26 , B32B38/04 , B32B38/10 , B32B38/162 , B32B2037/268 , B32B2315/08 , B32B2457/14 , H01L21/02057 , H01L21/02126 , H01L21/304 , H01L21/6836 , H01L21/76898 , H01L24/03 , H01L24/14 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2221/68372 , H01L2221/68381 , H01L2224/0401 , H01L2224/05025 , H01L2224/13023 , H01L2924/12042 , H01L2924/181 , Y10S438/977 , H01L2924/00
摘要: A method for processing substrates includes providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting release layer and thermosetting glue layers, wherein at least one of the thermosetting glue layers is provided on each side of the thermosetting release layer.
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公开(公告)号:US09589947B2
公开(公告)日:2017-03-07
申请号:US14566685
申请日:2014-12-10
发明人: Jihwan Hwang , Young Kun Jee , Jung-Hwan Kim , Tae Hong Min , Kwang-chul Choi
IPC分类号: H01L25/00 , H01L25/18 , H01L21/56 , H01L23/00 , H01L25/065 , H01L21/683 , H01L23/31
CPC分类号: H01L25/50 , H01L21/56 , H01L21/563 , H01L21/6835 , H01L23/3185 , H01L24/97 , H01L25/0657 , H01L25/18 , H01L2221/68327 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/73204 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06555 , H01L2225/06582 , H01L2924/1431 , H01L2924/1434 , H01L2924/00
摘要: Provided are semiconductor devices and methods of manufacturing the same. The semiconductor package includes a substrate, a first semiconductor chip mounted on the circuit substrate and having a first width, a second semiconductor chip overlying the first semiconductor chip and having a second width greater than the first width, and a first under filler disposed between the first and second semiconductor chips, covering a side surface of the first semiconductor chip and having an inclined side surface.
摘要翻译: 提供半导体器件及其制造方法。 半导体封装包括基板,安装在电路基板上并具有第一宽度的第一半导体芯片,覆盖第一半导体芯片并且具有大于第一宽度的第二宽度的第二半导体芯片,以及设置在第一半导体芯片 第一和第二半导体芯片,覆盖第一半导体芯片的侧表面并具有倾斜的侧表面。
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公开(公告)号:US09023716B2
公开(公告)日:2015-05-05
申请号:US14147718
申请日:2014-01-06
发明人: Chungsun Lee , Jung-Seok Ahn , Kwang-chul Choi , Un-Byoung Kang , Jung-Hwan Kim , Joonsik Sohn , Jeon Il Lee
IPC分类号: H01L21/58 , H01L21/304 , H01L21/683
CPC分类号: H01L21/6835 , B32B37/1284 , B32B37/18 , B32B37/24 , B32B37/26 , B32B38/04 , B32B38/10 , B32B38/162 , B32B2037/268 , B32B2315/08 , B32B2457/14 , H01L21/02057 , H01L21/02126 , H01L21/304 , H01L21/6836 , H01L21/76898 , H01L24/03 , H01L24/14 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2221/68372 , H01L2221/68381 , H01L2224/0401 , H01L2224/05025 , H01L2224/13023 , H01L2924/12042 , H01L2924/181 , Y10S438/977 , H01L2924/00
摘要: A method for processing substrates includes providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting release layer and thermosetting glue layers, wherein at least one of the thermosetting glue layers is provided on each side of the thermosetting release layer.
摘要翻译: 一种处理衬底的方法包括:在衬底和载体之间提供接合层,以将衬底粘合到载体上,在衬底由载体支撑的同时处理衬底,以及去除结合层以使衬底与载体分离。 粘合层可以包括热固性剥离层和热固性胶层,其中至少一个热固性胶层设置在热固性剥离层的每一侧上。
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公开(公告)号:US08816509B2
公开(公告)日:2014-08-26
申请号:US13733481
申请日:2013-01-03
发明人: Ji-Seok Hong , Kwang-chul Choi , Sangwon Kim , Hyun-Jung Song , Eun-Kyoung Choi
IPC分类号: H01L23/48 , H01L23/52 , H01L29/40 , H01L23/02 , H01L23/00 , H01L21/56 , H01L23/29 , H01L25/065 , H01L25/00 , H01L23/31
CPC分类号: H01L23/29 , H01L21/561 , H01L21/563 , H01L23/3114 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/131 , H01L2224/16146 , H01L2224/29017 , H01L2224/29036 , H01L2224/29099 , H01L2224/2929 , H01L2224/293 , H01L2224/33051 , H01L2224/33505 , H01L2224/73104 , H01L2224/81191 , H01L2224/81201 , H01L2224/83104 , H01L2224/83191 , H01L2224/83986 , H01L2224/84201 , H01L2224/9211 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/181 , H01L2224/81 , H01L2924/00014 , H01L2224/83 , H01L2924/0665 , H01L2924/01014 , H01L2924/014 , H01L2924/00012
摘要: A semiconductor package includes first and second semiconductor elements electrically interconnected by a connection structure. The first and second semiconductor elements are joined by a protection structure that includes an adhesive layer surrounded by a retention layer.
摘要翻译: 半导体封装包括通过连接结构电互连的第一和第二半导体元件。 第一和第二半导体元件通过保护结构连接,保护结构包括由保持层包围的粘合剂层。
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公开(公告)号:US20130260551A1
公开(公告)日:2013-10-03
申请号:US13903164
申请日:2013-05-28
发明人: Un-Byoung Kang , Kwang-chul Choi , Jung-Hwan Kim , Tae Hong Min , Hojin Lee , Minseung Yoon
IPC分类号: H01L21/48
CPC分类号: H01L21/4835 , H01L21/6836 , H01L21/76898 , H01L23/3114 , H01L23/3192 , H01L23/49827 , H01L24/06 , H01L24/45 , H01L24/48 , H01L25/0657 , H01L27/14618 , H01L2221/68327 , H01L2221/6834 , H01L2224/02166 , H01L2224/02313 , H01L2224/02372 , H01L2224/02375 , H01L2224/02381 , H01L2224/024 , H01L2224/03462 , H01L2224/03466 , H01L2224/03602 , H01L2224/0401 , H01L2224/04042 , H01L2224/05008 , H01L2224/05022 , H01L2224/05026 , H01L2224/05147 , H01L2224/05548 , H01L2224/05567 , H01L2224/05571 , H01L2224/05647 , H01L2224/06131 , H01L2224/06135 , H01L2224/06138 , H01L2224/06181 , H01L2224/13007 , H01L2224/13022 , H01L2224/13024 , H01L2224/13025 , H01L2224/16147 , H01L2224/16225 , H01L2224/16227 , H01L2224/29011 , H01L2224/32225 , H01L2224/45139 , H01L2224/48105 , H01L2224/48227 , H01L2224/48228 , H01L2224/73253 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15183 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012
摘要: In a semiconductor device, an organic insulation pattern is disposed between first and second rerouting patterns. The organic insulation pattern may absorb the physical stress that occurs when the first and second rerouting patterns expand under heat. Since the organic insulation pattern is disposed between the first and second rerouting patterns, insulating properties can be increased relative to a semiconductor device in which a semiconductor pattern is disposed between rerouting patterns. Also, since a seed layer pattern is disposed between the first and second rerouting patterns and the organic insulation pattern and between the substrate and the organic insulation pattern, the adhesive strength of the first and second rerouting patterns is enhanced. This also reduces any issues with delamination. Also, the seed layer pattern prevents the metal that forms the rerouting pattern from being diffused to the organic insulation pattern. Therefore, a semiconductor device with enhanced reliability may be implemented.
摘要翻译: 在半导体器件中,有机绝缘图案设置在第一和第二重新布线图案之间。 有机绝缘图案可以吸收当第一和第二重新布线图案在加热下膨胀时发生的物理应力。 由于有机绝缘图案设置在第一和第二重新布线图案之间,所以可以相对于其中在重新布线图案之间设置半导体图案的半导体器件来增加绝缘性能。 此外,由于在第一和第二重新布线图案和有机绝缘图案之间以及基板和有机绝缘图案之间设置种子层图案,所以第一和第二布线图案的粘合强度提高。 这也减少了分层问题。 此外,种子层图案防止形成重新布线图案的金属扩散到有机绝缘图案。 因此,可以实现具有增强的可靠性的半导体器件。
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