公开(公告)号：US07045446B2

公开(公告)日：2006-05-16

申请号：US10840422

申请日：2004-05-07

申请人： Kazutoshi Onozawa ,  Daisuke Ueda ,  Tomoaki Tojo

发明人： Kazutoshi Onozawa ,  Daisuke Ueda ,  Tomoaki Tojo

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L24/95 ,  H01L21/67121 ,  H01L25/50 ,  H01L2224/95085 ,  H01L2224/95136 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/10329 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： In a semiconductor device fabrication method using a fluidic self-assembly technique in which in a liquid, a plurality of semiconductor elements are mounted in a self-aligned manner on a substrate with a plurality of recessed portions formed therein, protruding potions that are inserted in the respective recessed portions of the substrate are formed in the lower portions of the respective semiconductor elements, the liquid in which the semiconductor elements have been spread is poured over the substrate intermittently, and the substrate is rotated in a period of time in which the liquid is not poured.

摘要翻译： 在使用流体自组装技术的半导体器件制造方法中，其中在液体中，多个半导体元件以自对准的方式安装在其上形成有多个凹部的基板上，插入的突出的部分 基板的各凹部形成在各半导体元件的下部，将半导体元件已经被分散的液体间歇地注入到基板上，并且使基板在液体 不倒

公开(公告)号：US20060038636A1

公开(公告)日：2006-02-23

申请号：US11194460

申请日：2005-08-02

申请人： Naohiro Tsurumi ,  Kazuhiro Yahata ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda ,  Atsuhiko Kanda

发明人： Naohiro Tsurumi ,  Kazuhiro Yahata ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda ,  Atsuhiko Kanda

IPC分类号： H03H9/58

CPC分类号： H03H9/173 ,  H03H3/04 ,  H03H9/172 ,  H03H9/564 ,  H03H2003/021

摘要： An acoustic resonator includes: a substrate; a resonator film which is supported above the main surface of the substrate and includes a piezoelectric film and a pair of a top electrode and a bottom electrode which are formed on part of the top surface and part of the bottom surface of the piezoelectric film, respectively, to face each other via the piezoelectric film; and a support which is formed on the main surface of the substrate to support the resonator film from below. A resonance cavity is provided in part of a region between the substrate and the resonator film below at least a portion of part of the resonator film where the top electrode and the bottom electrode coincide with each other and an isolation cavity is provided in other part of said region where the support and the resonance cavity do not exist.

摘要翻译： 声谐振器包括：基板; 一种谐振膜，其被支撑在基板的主表面上方，分别包括压电膜和一对顶电极和底电极，它们分别形成在压电膜的顶表面和底表面的一部分上 通过压电膜相互面对; 以及形成在基板的主表面上以从下方支撑谐振膜的支撑体。 谐振腔被设置在基板和谐振器膜之间的区域的一部分的下方，在谐振膜的至少一部分之上，其中顶部电极和底部电极彼此重合，并且在另一部分中设置隔离腔 所述区域不存在支撑和谐振腔。

公开(公告)号：US06982479B2

公开(公告)日：2006-01-03

申请号：US10669219

申请日：2003-09-24

申请人： Masaaki Nishijima ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Masaaki Nishijima ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L23/02

CPC分类号： H01L23/49861 ,  H01L23/057 ,  H01L23/481 ,  H01L23/49541 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01032 ,  H01L2924/10162 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device in which an inductance element formed in a resin package has stable characteristics, impedance matching is achieved easily, and the stability of high-frequency characteristics is improved, more particularly a semiconductor chip sealed within mold resin having a conductor lead extending from an inside of the mold resin to an outside. A portion of the conductor lead inside the mold resin forms an inductance element, at least a part of which is narrower than the external portion of the conductor outside the mold resin.

摘要翻译： 形成在树脂封装中的电感元件的半导体器件具有稳定的特性，容易实现阻抗匹配，提高了高频特性的稳定性，更具体地说，密封在具有从 模具树脂内部到外面。 导体引线在模具树脂内的一部分形成电感元件，其电感元件的至少一部分比模具树脂外导体的外部部分窄。

公开(公告)号：US20050272224A1

公开(公告)日：2005-12-08

申请号：US11146020

申请日：2005-06-07

申请人： Tetsuzo Ueda ,  Daisuke Ueda

发明人： Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： H01L21/301 ,  H01L21/304 ,  H01L21/78 ,  H01L33/00 ,  H01S5/02 ,  H01S5/343

CPC分类号： H01L21/3043 ,  B82Y20/00 ,  H01L21/78 ,  H01L33/0095 ,  H01S5/0201 ,  H01S5/0213 ,  H01S5/34333

摘要： The present invention aims at providing a method for dividing a substrate that is capable of dividing each substrate into chips in the same square-like form without causing chip breaking and capable of forming all cleaved facets flat. In the method for dividing a substrate of the present invention, an electron beam 1 with the intensity that causes a dislocation inside the substrate is irradiated to a substrate surface 2 to generate a crack starting from such dislocation, and a cleaved facet 5 is formed to divide the substrate.

摘要翻译： 本发明的目的在于提供一种分割基板的方法，该方法能够将每个基板分成相同方形的芯片，而不会造成断屑并且能够形成所有的切割面平面。 在本发明的基板分割方法中，将具有导致基板内的位错的强度的电子束1照射到基板表面2，以从该位错开始产生裂纹，并且形成切割面5 划分基板。

公开(公告)号：US20050269577A1

公开(公告)日：2005-12-08

申请号：US11146036

申请日：2005-06-07

申请人： Tetsuzo Ueda ,  Daisuke Ueda

发明人： Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： C25F3/02 ,  C25F3/12 ,  H01L21/306 ,  H01L21/3063 ,  H01L27/15 ,  H01L33/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/183 ,  H01S5/323

CPC分类号： C25F3/02 ,  C25F3/12 ,  H01L21/30625 ,  H01L21/30635 ,  H01L33/0095 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/18369 ,  H01S5/32341

摘要： The present invention is conceived in order to accomplish an object of providing a surface treatment method and a surface treatment device that can planarize, at high speed, the surface of a nitride semiconductor with an excellent evenness. The surface treatment device includes an electrolyte supply port 15 for supplying a KOH electrolyte 14 containing fine metal particles and an abrasive, a storage container 40 having an opening on the top surface and is for storing the KOH electrolyte 14 supplied from the electrolyte supply port 15, a wafer holder 12 for fixing the GaN substrate 11 and bringing the surface of the GaN substrate 11 into contact with the KOH electrolyte 14 by impregnating the surface of the substrate into the KOH electrolyte 14 in the storage container 40 from above, a load 13 placed on the wafer holder 12, a device housing 16, a polishing pad 17 for polishing the surface of the GaN substrate 11 and an ultraviolet light source 42.

摘要翻译： 为了实现提供表面处理方法和表面处理装置的目的，本发明的目的是提供一种能够以高的平均化均匀化的氮化物半导体的表面。 表面处理装置包括用于供给包含金属微粒和研磨剂的KOH电解质14的电解质供给口15，在顶面具有开口的储存容器40，用于储存从电解质供给口15供给的KOH电解质14 ，用于固定GaN衬底11并使GaN衬底11的表面与KOH电解质14接触的晶片保持器12，通过将衬底的表面从上方浸渍到存储容器40中的KOH电解质14中，负载13 放置在晶片保持器12上，器件壳体16，用于抛光GaN衬底11的表面的抛光垫17和紫外光源42。

公开(公告)号：US20050205892A1

公开(公告)日：2005-09-22

申请号：US11081622

申请日：2005-03-17

申请人： Manabu Yanagihara ,  Daisuke Ueda

发明人： Manabu Yanagihara ,  Daisuke Ueda

IPC分类号： H01L21/338 ,  H01L29/732 ,  H01L29/812

CPC分类号： H01L29/66871 ,  H01L29/812

摘要： The semiconductor device of the present invention includes a device formation region formed on a substrate and including at least one semiconductor region, and a first electrode and a second electrode formed spaced apart from each other on the device formation region. A semi-insulating film is formed to cover the surface of a portion of the semiconductor region, which portion is located between the first and second electrodes and in which portion a depletion layer extends when a reverse bias is applied between the first and second electrodes.

摘要翻译： 本发明的半导体器件包括形成在衬底上并且包括至少一个半导体区域的器件形成区域，以及在器件形成区域上彼此间隔开形成的第一电极和第二电极。 形成半绝缘膜以覆盖半导体区域的一部分的表面，该部分位于第一和第二电极之间，并且当在第一和第二电极之间施加反向偏压时耗尽层延伸。

公开(公告)号：US20050201139A1

公开(公告)日：2005-09-15

申请号：US11121011

申请日：2005-05-04

申请人： Yasuhiro Shimada ,  Yoshihisa Kato ,  Keisuke Tanaka ,  Daisuke Ueda

发明人： Yasuhiro Shimada ,  Yoshihisa Kato ,  Keisuke Tanaka ,  Daisuke Ueda

IPC分类号： H01L27/105 ,  G11C11/22 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/108 ,  H01L27/115

CPC分类号： H01L27/11507 ,  H01L21/31691 ,  H01L27/11502 ,  H01L28/55

摘要： A memory device includes memory cells each having a capacitor including a lower electrode, a ferroelectric film and an upper electrode which are formed in this order over a substrate made of silicon. The ferroelectric film is selectively grown on the lower electrode. Such selective formation of the ferroelectric film on the lower electrode having a desired shape prevents a damaged portion from occurring in the ferroelectric film, thus making it possible to downsize the memory cells.

摘要翻译： 存储器件包括存储单元，每个存储单元具有在由硅制成的衬底上依次形成的下电极，铁电体膜和上电极的电容器。 在下电极上选择性地生长强电介质膜。 在具有所需形状的下电极上选择性地形成铁电体膜，可防止在铁电体膜中发生损坏部分，从而可以使存储单元小型化。

公开(公告)号：US06928651B2

公开(公告)日：2005-08-09

申请号：US10475070

申请日：2003-02-19

申请人： Kotaro Kurokawa ,  Takeshi Yamasaki ,  Tomomi Yukumoto ,  Masanobu Yamamoto ,  Daisuke Ueda

发明人： Kotaro Kurokawa ,  Takeshi Yamasaki ,  Tomomi Yukumoto ,  Masanobu Yamamoto ,  Daisuke Ueda

IPC分类号： G11B7/0055 ,  G11B7/242 ,  G11B7/26 ,  G11B7/24

CPC分类号： G11B7/26 ,  G11B7/24038 ,  G11B7/268

摘要： An initialization method of an optical recording medium having a plurality of optical recording layers capable of reducing uneven initialization due to light interference caused at the time of initialization without deterioration of information recording/reproducing signal characteristics of the recording layers is provided. An initialization method of an optical recording medium, wherein a second optical recording layer and a first optical recording layer are successively stacked via an interlayer on a substrate, a protective layer is formed further on the first optical recording layer, a recording film in the first optical recording layer comprises a phase change type recording material, and a recording/reproducing light is irradiated from the protective film side at the time of recording/reproducing, a material composing the interlayer has a sufficient transmittance for a wavelength of the recording/reproducing light and absorption for an initializing light, and, in a step of initializing by irradiating an initializing light on the first optical recording layer from the protective film side, laser light having a wavelength range of 200 nm to 400 nm is used as the initializing light.

摘要翻译： 提供了一种具有多个光记录层的光记录介质的初始化方法，该多个光记录层能够在初始化时引起由于光干扰引起的不均匀初始化，而不会导致记录层的信息记录/再现信号特性的劣化。 光学记录介质的初始化方法，其中第二光学记录层和第一光学记录层通过衬底上的中间层连续层叠，在第一光学记录层上进一步形成保护层，在第一光学记录层中的记录膜 光记录层包括相变型记录材料，并且在记录/再现时从保护膜侧照射记录/再现光，构成中间层的材料对于记录/再现光的波长具有足够的透射率 并且对于初始化光进行吸收，并且在通过从保护膜侧将初始化光照射在第一光学记录层上的初始化步骤中，使用波长范围为200nm至400nm的激光作为初始化光。

公开(公告)号：US20050026393A1

公开(公告)日：2005-02-03

申请号：US10861464

申请日：2004-06-07

申请人： Yutaka Hirose ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Yutaka Hirose ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L21/30 ,  H01L21/306 ,  H01L21/46 ,  H01L21/78

CPC分类号： H01L21/30612 ,  H01L21/78

摘要： A semiconductor layer formed on one surface of a substrate is irradiated with light from the other surface of the substrate to thermally decompose part of a region of the semiconductor layer in contact with the substrate, thereby forming a thermally decomposed layer. Thereafter, the thermally decomposed layer is removed with the substrate kept bonded with the semiconductor layer.

摘要翻译： 在基板的一个表面上形成的半导体层被照射来自基板的另一个表面的光，以热分解半导体层与基板接触的区域的一部分，从而形成热分解层。 之后，用与半导体层保持接合的基板去除热分解层。

公开(公告)号：US06589857B2

公开(公告)日：2003-07-08

申请号：US10100118

申请日：2002-03-19

申请人： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida

发明人： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida

IPC分类号： H01L2120

CPC分类号： C30B33/00 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/0079 ,  H01S5/32341 ,  H01S2304/12

摘要： A first semiconductor film made of a nitride semiconductor is grown through epitaxial growth on a light transmitting substrate. A thermal decomposition layer is disposed in a space between the substrate and the first semiconductor film by irradiating laser light to the first semiconductor film from the back surface of the substrate. After a second semiconductor film made of a nitride semiconductor is grown through epitaxial growth while the first semiconductor film is placed on the substrate, the temperature of the substrate is lowered to room temperature. Then, by separating and removing the substrate from the first and second semiconductor films, it is possible to obtain a nitride semiconductor substrate having an area substantially as large as the area of the substrate.