公开(公告)号：US06466426B1

公开(公告)日：2002-10-15

申请号：US09366155

申请日：1999-08-03

申请人： Yeuk-Fai Edwin Mok ,  Dmitry Lubomirsky ,  Dennis Koosau ,  Danny Wang ,  Senh Thach ,  Paul Exline

发明人： Yeuk-Fai Edwin Mok ,  Dmitry Lubomirsky ,  Dennis Koosau ,  Danny Wang ,  Senh Thach ,  Paul Exline

IPC分类号： H01N1300

CPC分类号： H01L21/68785 ,  H01L21/67098 ,  Y10T279/23

摘要： A semiconductor wafer processing apparatus, and more specifically, a semiconductor substrate support pedestal having a substrate support, an isolator, and first and second heat transfer plates for providing a controllable, uniform temperature distribution across the diameter of a semiconductor wafer. A semiconductor wafer placed upon the pedestal is maintained uniformly at a predetermined temperature by heating the wafer with one or more electrodes embedded within the substrate support and cooling the wafer with a fluid passing through the first and second heat transfer plates.

摘要翻译： 更具体地说，一种具有衬底支撑件，隔离器以及用于在半导体晶片的直径上提供可控均匀的温度分布的第一和第二传热板的半导体衬底支撑座。 将放置在基座上的半导体晶片通过用嵌入在基板支撑体内的一个或多个电极加热晶片并以流过第一和第二传热板的流体冷却晶片来均匀地保持在预定温度。

公开(公告)号：US20170250060A1

公开(公告)日：2017-08-31

申请号：US15594297

申请日：2017-05-12

申请人： Dmitry Lubomirsky ,  Son T. Nguyen ,  Anh N. Nguyen ,  David Palagashvili

发明人： Dmitry Lubomirsky ,  Son T. Nguyen ,  Anh N. Nguyen ,  David Palagashvili

IPC分类号： H01J37/32 ,  H01L21/687 ,  H01L21/67

CPC分类号： H01J37/32724 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

摘要： A workpiece carrier is described for a plasma processing chamber that has isolated heater plate blocks. In one example, a plasma processing system has a plasma chamber, a plasma source electrically coupled with a showerhead included within the plasma chamber, a workpiece holder in a processing region of the plasma chamber having a puck to carry a workpiece, wherein the workpiece holder includes a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, wherein each block includes a heater to heat a respective block of the heater plate, and wherein the workpiece holder includes a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate defining a cooling channel configured to distribute a heat transfer fluid to transfer heat from the cooling plate, and a temperature controller to independently control each heater.

公开(公告)号：US09202736B2

公开(公告)日：2015-12-01

申请号：US11888341

申请日：2007-07-31

申请人： Kadthala Ramaya Narendrnath ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Muhammad Rasheed ,  Tony Kaushal

发明人： Kadthala Ramaya Narendrnath ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Muhammad Rasheed ,  Tony Kaushal

IPC分类号： B23P6/00 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6833 ,  B23P6/00 ,  H02N13/00

摘要： A method for refurbishing at least a portion of an electrostatic chuck. The method comprises removing a first dielectric component from a fluid distribution element of the electrostatic chuck and replacing the first dielectric component with a second dielectric component.

公开(公告)号：US08940642B2

公开(公告)日：2015-01-27

申请号：US13187304

申请日：2011-07-20

申请人： Srinivas D. Nemani ,  Yifeng Zhou ,  Dmitry Lubomirsky ,  Ellie Yieh

发明人： Srinivas D. Nemani ,  Yifeng Zhou ,  Dmitry Lubomirsky ,  Ellie Yieh

IPC分类号： H01L21/311 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/02

CPC分类号： H01L21/31116 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76826

摘要： Methods of multiple patterning of low-k dielectric films are described. For example, a method includes forming and patterning a first mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. A second mask layer is formed and patterned above the first mask layer. A pattern of the second mask layer is transferred at least partially into the low-k dielectric layer by modifying first exposed portions of the low-k dielectric layer with a first plasma process and removing the modified portions of the low-k dielectric layer. Subsequently, a pattern of the first mask layer is transferred at least partially into the low-k dielectric layer by modifying second exposed portions of the low-k dielectric layer with a second plasma process and removing the modified portions of the low-k dielectric layer.

摘要翻译： 描述了低k电介质膜的多次图案化方法。 例如，一种方法包括在低k电介质层上形成和图案化第一掩模层，低k电介质层设置在衬底之上。 第二掩模层在第一掩模层之上形成并图案化。 通过用第一等离子体处理修改低k电介质层的第一暴露部分并去除低k电介质层的修改部分，将第二掩模层的图案至少部分地转移到低k电介质层中。 随后，通过用第二等离子体处理修改低k电介质层的第二暴露部分，将第一掩模层的图案至少部分地转移到低k电介质层中，并且去除低k电介质层的修饰部分 。

公开(公告)号：US08742665B2

公开(公告)日：2014-06-03

申请号：US12905940

申请日：2010-10-15

申请人： Dmitry Lubomirsky ,  Jang-Gyoo Yang ,  Matthew Miller ,  Jay Pinson ,  Kien Chuc

发明人： Dmitry Lubomirsky ,  Jang-Gyoo Yang ,  Matthew Miller ,  Jay Pinson ,  Kien Chuc

IPC分类号： H05B31/26

CPC分类号： H01J37/3211 ,  H01J37/32357

摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

公开(公告)号：US20120073501A1

公开(公告)日：2012-03-29

申请号：US13248567

申请日：2011-09-29

申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien N. Chuc ,  Ellie Yieh

发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien N. Chuc ,  Ellie Yieh

IPC分类号： C23C16/50 ,  C23C16/455

CPC分类号： C23C16/45502 ,  C23C16/401 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32752 ,  H01J2237/2001 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76224

摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

摘要翻译： 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。 顶部入口可以位于衬底台的上方，并且侧入口可以在衬底台周围径向分布。 反应性自由基前体可以通过顶部入口提供给沉积室。 还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

公开(公告)号：US08022377B2

公开(公告)日：2011-09-20

申请号：US12107281

申请日：2008-04-22

申请人： Dmitry Lubomirsky ,  Muhammad M. Rasheed ,  Ellie Y. Yieh

发明人： Dmitry Lubomirsky ,  Muhammad M. Rasheed ,  Ellie Y. Yieh

IPC分类号： G21G5/00

CPC分类号： H01L21/67115 ,  H01L21/3105 ,  H01S3/03 ,  H01S3/034 ,  H01S3/0385 ,  H01S3/225 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/245

摘要： An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.

摘要翻译： 提供了一种用于产生准分子辐射的装置。 该装置包括具有壳体壁的壳体。 电极配置在外壳内。 管状体在电极周围。 管状体包括外壁和内壁。 至少一个惰性气体位于外壁和内壁之间，其中壳体壁和电极构造成激发惰性气体以照射准分子光以进行固化。

公开(公告)号：US20100071210A1

公开(公告)日：2010-03-25

申请号：US12236768

申请日：2008-09-24

申请人： TIEN FAK TAN ,  Lun Tsuei ,  Shaofeng Chen ,  Felix Rabinovich ,  Dmitry Lubomirsky ,  Kimberly Hinckley

发明人： TIEN FAK TAN ,  Lun Tsuei ,  Shaofeng Chen ,  Felix Rabinovich ,  Dmitry Lubomirsky ,  Kimberly Hinckley

IPC分类号： B05B1/00 ,  B05D1/02 ,  B05B1/14 ,  B21D53/00

CPC分类号： C23C16/45565 ,  H01J37/3244 ,  Y10T29/49401

摘要： A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.

摘要翻译： 提供一种制造半导体装置的面板的方法。 该方法包括响应于预定气体参数的预定规格来选择工具的尺寸。 该工具用于在面板内形成孔。 面板的孔的第一气体参数由装置测量以确定面板的孔的测量的第一气体参数是否在预定规格内。

公开(公告)号：US20100048028A1

公开(公告)日：2010-02-25

申请号：US12195127

申请日：2008-08-20

申请人： Muhammad M. Rasheed ,  Dmitry Lubomirsky

发明人： Muhammad M. Rasheed ,  Dmitry Lubomirsky

IPC分类号： C23C16/00 ,  B29C67/04 ,  H01L21/30

CPC分类号： C23C16/45591 ,  C04B35/581 ,  C04B40/0092 ,  C23C16/4404 ,  C23C16/45563 ,  C23C16/45565 ,  H01J37/32449 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/28556

摘要： Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.

摘要翻译： 本文提供了与氮化铝挡板相关的方法和装置。 在一些实施例中，用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体，其中，主体表面上的氮化铝与金属氧化物的比例大于或等于 身体。 在一些实施例中，主体可以具有中心杆和外环，其与中心杆的下部连接并径向向外延伸。 在一些实施方案中，制造挡板的方法可以包括烧结铝，氮和金属氧化物结合剂以形成挡板的主体，所述主体具有设置在其表面上的过量的金属氧化物结合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。

公开(公告)号：US07654221B2

公开(公告)日：2010-02-02

申请号：US11175251

申请日：2005-07-06

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian A. Pancham

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian A. Pancham

IPC分类号： B05C13/00

CPC分类号： H01L21/68728 ,  C23C18/1619 ,  C23C18/1632 ,  C23C26/00 ,  C23C26/02 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68792

摘要： An electroless deposition system and electroless deposition stations are provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate shuttle positioned to transfer substrates between the first and second processing stations. The electroless deposition station also includes various fluid delivery and substrate temperature controlling devices to perform a contamination free and uniform electroless deposition process.

摘要翻译： 提供无电沉积系统和无电沉积站。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站和定位成转移的基板梭 第一和第二处理站之间的基板。 无电沉积站还包括各种流体输送和基板温度控制装置，以执行无污染和均匀的无电沉积工艺。