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公开(公告)号：US20170213937A1
公开(公告)日：2017-07-27
申请号：US15426662
申请日：2017-02-07
申请人： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelien J.F. David
发明人： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelien J.F. David
CPC分类号： H01L33/20 , H01L33/0075 , H01L33/02 , H01L33/16 , H01L33/32 , H01L33/405 , H05B33/0842
摘要： A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
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公开(公告)号：US09000450B2
公开(公告)日：2015-04-07
申请号：US13404369
申请日：2012-02-24
IPC分类号： H01L27/15 , C30B29/60 , B82Y20/00 , G02B6/122 , H01L33/24 , H01L33/08 , H01S5/10 , H01S5/343
CPC分类号： C30B29/60 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0083 , H01S5/105 , H01S5/34333
摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.
摘要翻译： 光子晶体在诸如III族氮化物结构的半导体结构内生长，其包括设置在n型区域和p型区域之间的发光区域。 光子晶体可以是由具有与半导体材料不同的折射率的材料分离的半导体材料的多个区域。 例如，光子晶体可以是在结构中生长并由气隙或掩模材料区域分离的半导体材料的柱。 生长光子晶体，而不是将光子晶体蚀刻成已经生长的半导体层，避免了蚀刻造成的损伤，这可能降低效率，并提供不间断的平面，在其上形成电触点。
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93.发明授权III-nitride light emitting device with double heterostructure light emitting region 有权具有双异质结构发光区域的III族氮化物发光器件公开(公告)号：US08847252B2
公开(公告)日：2014-09-30
申请号：US12495464
申请日：2009-06-30
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.
摘要翻译： III族氮化物发光层设置在双异质结构中的n型区域和p型区域之间。 III族氮化物发光层的至少一部分具有渐变组成。
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公开(公告)号：US08628985B2
公开(公告)日：2014-01-14
申请号：US13252398
申请日：2011-10-04
申请人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach
发明人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach
IPC分类号： H01L21/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/502 , H01L33/62
摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent lens having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent lens to a light emitting device having a stack of layers including semiconductor layers comprising an active region includes elevating a temperature of the lens and the stack and applying a pressure to press the lens and the stack together. Bonding a high refractive index lens to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.
摘要翻译： 提供了具有提高光提取效率的发光器件。 发光器件具有包括有源区的半导体层的一叠层。 叠层结合到具有由有源区发射的光的折射率的透明透镜，优选大于约1.5，更优选大于约1.8。 将透明透镜粘合到具有包括有源区的半导体层的层叠的发光器件的方法包括提高透镜和叠层的温度并施加压力以将透镜和叠层压在一起。 将高折射率透镜粘合到发光器件通过减少由于全内反射引起的损耗来提高发光器件的光提取效率。 有利地，可以在不使用密封剂的情况下实现这种改进。
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公开(公告)号：US08502465B2
公开(公告)日：2013-08-06
申请号：US12936238
申请日：2010-09-20
CPC分类号： H05B37/02 , H01L33/16 , H01L33/32 , H01L33/405 , H01L2224/16 , H01L2224/48
摘要： A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.
摘要翻译： 发射波长为390-415nm的发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该器件的电流密度大于约175安培/厘米2，外部量子效率具有小于约5％的绝对效率。
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公开(公告)号：US08481408B2
公开(公告)日：2013-07-09
申请号：US13458587
申请日：2012-04-27
IPC分类号： H01L21/30
CPC分类号： H01L21/2007 , H01L21/02422 , H01L21/02458 , H01L21/0254 , H01L21/02658 , H01L21/3245 , H01L33/0095
摘要： A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.
摘要翻译： 一种放松应变材料层的方法。 该方法包括在应变材料层的第一面上沉积第一低粘度层; 将第一衬底粘合到第一低粘度层以形成第一复合结构; 对所述复合结构进行热处理以使所述第一低粘度层的回流至少部分地松弛所述应变材料层; 以及向所述应变材料层的第二面施加机械压力，其中所述第二面与所述第一面相对，并且在至少部分热处理期间垂直于所述应变材料层施加机械压力以松弛所述应变材料。
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公开(公告)号：US08334543B2
公开(公告)日：2012-12-18
申请号：US13459279
申请日：2012-04-30
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.
摘要翻译： 本发明的实施方案包括包含与主体结合的主体和种子层的基板，以及包括设置在种子层上生长的n型区域和p型区域之间的发光层的半导体结构。 在垂直于半导体结构的生长方向的方向上的折射率的变化设置在主体和发光层之间。
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公开(公告)号：US08278674B2
公开(公告)日：2012-10-02
申请号：US12390564
申请日：2009-02-23
IPC分类号： H01L33/00
CPC分类号： C09K11/7774 , C04B35/44 , C04B35/597 , C04B35/63416 , C04B35/645 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/5445 , C04B2235/6025 , C04B2235/6581 , C04B2235/662 , C09K11/0883 , C09K11/7721 , C09K11/7731 , C09K11/7734 , C09K11/7792 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L33/502 , H01L33/505 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure after growth of the structure on a conventional growth substrate. In some embodiments, the compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 μm.
摘要翻译： 包括设置在n型区域和p型区域之间的发光层的半导体结构附着到包括向器件提供机械支撑的主体的复合衬底和包括发光材料的陶瓷层。 在一些实施方案中，化合物基底包括其上生长半导体结构的结晶晶种层。 陶瓷层设置在种子层和主体之间。 在一些实施方案中，在常规生长衬底上的结构生长之后，化合物衬底附着到半导体结构。 在一些实施例中，复合衬底与半导体结构间隔开，并且不提供对结构的机械支撑。 在一些实施例中，陶瓷层的厚度小于500μm。
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公开(公告)号：US20120161187A1
公开(公告)日：2012-06-28
申请号：US13404369
申请日：2012-02-24
IPC分类号： H01L33/58
CPC分类号： C30B29/60 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0083 , H01S5/105 , H01S5/34333
摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.
摘要翻译： 光子晶体在诸如III族氮化物结构的半导体结构内生长，其包括设置在n型区域和p型区域之间的发光区域。 光子晶体可以是由具有与半导体材料不同的折射率的材料分离的半导体材料的多个区域。 例如，光子晶体可以是在结构中生长并由气隙或掩模材料区域分离的半导体材料的柱。 生长光子晶体，而不是将光子晶体蚀刻成已经生长的半导体层，避免了蚀刻造成的损伤，这可能降低效率，并提供不间断的平面，在其上形成电触点。
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公开(公告)号：US20120043552A1
公开(公告)日：2012-02-23
申请号：US13211145
申请日：2011-08-16
CPC分类号： H01L33/504 , C09K11/0883 , C09K11/565 , C09K11/7721 , C09K11/7734 , C09K11/7739 , C09K11/7774 , H01L25/0753 , H01L33/08 , H01L33/32 , H01L33/486 , H01L33/50 , H01L33/54 , H01L2924/0002 , Y02B20/181 , H01L2924/00
摘要： An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
摘要翻译： 描述了具有多种荧光体的LED泵浦光。 用紫外线和/或紫外线波长发射辐射的LED用于泵浦发射其它颜色的荧光体材料。 布置在不同波长范围内的LED，以减少光吸收并提高光输出效率。
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