中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

317 records (took 0.052 seconds)

    Deposition of heteroatom-doped carbon films
    112.
    发明授权
    Deposition of heteroatom-doped carbon films 有权
    沉积掺杂杂质的碳膜

    公开(公告)号：US09406509B2

    公开(公告)日：2016-08-02

    申请号：US14161313

    申请日：2014-01-22

    Applicant: Applied Materials, Inc.

    Inventor： Pramit Manna ,  Abhijit Basu Mallick ,  Mukund Srinivasan

    IPC: H01L21/31 ,  H01L21/027 ,  H01L21/311

    CPC classification number: H01L21/0271 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/31133 ,  H01L21/31144 ,  Y10T428/24802

    Abstract: Easily removable heteroatom-doped carbon-containing layers are deposited. The carbon-containing layers may be used as hardmasks. The heteroatom-doped carbon-containing hardmasks have high etch selectivity and density and also a low compressive stress, which will reduce or eliminate problems with wafer bow. Heteroatoms incorporated into the hardmask include sulfur, phosphorous, nitrogen, oxygen, and fluorine, all of which have low reactivity towards commonly used etchants. When sulfur is used as the heteroatom, the hardmask is easily removed, which simplifies the fabrication of NAND devices, DRAM devices, and other devices.

    Abstract translation: 沉积易于除去的杂原子掺杂的含碳层。 含碳层可以用作硬掩模。 掺杂掺杂碳的硬掩模具有高蚀刻选择性和密度以及低压缩应力，这将减少或消除晶片弓的问题。 掺入硬掩模的杂原子包括硫，磷，氮，氧和氟，所有这些对于常用的蚀刻剂具有低反应性。 当使用硫作为杂原子时，硬掩模容易去除，这简化了NAND​​器件，DRAM器件和其它器件的制造。

    Flowable silicon—carbon—oxygen layers for semiconductor processing
    113.
    发明授权
    Flowable silicon—carbon—oxygen layers for semiconductor processing 有权
    可流动的硅 - 碳 - 氧层用于半导体加工

    公开(公告)号：US09343293B2

    公开(公告)日：2016-05-17

    申请号：US13934863

    申请日：2013-07-03

    Applicant: Applied Materials, Inc.

    Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    IPC: H01L21/02 ,  C23C16/40 ,  C23C16/452 ,  C23C16/455

    CPC classification number: H01L21/02216 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274

    Abstract: Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a radical oxygen precursor in a plasma free substrate processing region within a chemical vapor deposition chamber. The silicon-and-carbon-containing precursor and the radical oxygen precursor react to deposit a flowable silicon-carbon-oxygen layer on the patterned substrate. The resulting film possesses a low wet etch rate ratio relative to thermal silicon oxide and other standard dielectrics.

    Abstract translation: 描述了在图案化衬底上形成电介质层的方法。 所述方法可以包括在化学气相沉积室内的无等离子体衬底处理区域中组合含硅和碳的前体和自由基氧前体。 含硅和碳的前体和自由基氧前体反应以在图案化的衬底上沉积可流动的硅 - 碳 - 氧层。 所得膜相对于热氧化硅和其它标准电介质具有低的湿蚀刻速率比。

    Controlled air gap formation
    116.
    发明授权
    Controlled air gap formation 有权
    控制气隙形成

    公开(公告)号：US08921235B2

    公开(公告)日：2014-12-30

    申请号：US13834508

    申请日：2013-03-15

    Applicant: Applied Materials Inc.

    Inventor： Kiran V. Thadani ,  Jingjing Xu ,  Abhijit Basu Mallick ,  Joe Griffith Cruz ,  Nitin K. Ingle ,  Pravin K. Narwankar

    IPC: H01L21/00 ,  H01L21/20

    CPC classification number: H01L21/2015 ,  C23C16/045 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76837 ,  H01L2221/1047

    Abstract: A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.

    Abstract translation: 在衬底上形成和控制相邻凸起特征之间的空气间隙的方法包括：使用可流动沉积工艺在邻近凸起特征之间的底部区域中形成含硅膜。 该方法还包括在含硅膜的顶部上形成含碳材料，并使用可流动的沉积工艺在含碳材料上形成第二膜。 第二膜填充相邻凸起特征之间的上部区域。 该方法还包括在升高的温度下固化材料一段时间以形成相邻凸起特征之间的气隙。 膜的厚度和数量层可用于控制厚度，垂直位置和气隙数量。

    Flowable films using alternative silicon precursors
    117.
    发明授权
    Flowable films using alternative silicon precursors 有权
    使用替代硅前体的可流动膜

    公开(公告)号：US08871656B2

    公开(公告)日：2014-10-28

    申请号：US13765328

    申请日：2013-02-12

    Applicant: Applied Materials, Inc.

    Inventor： Abhijit Basu Mallick ,  Nitin K. Ingle

    IPC: H01L21/02 ,  H01L21/762

    CPC classification number: H01L21/0217 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02293 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/76224

    Abstract: Methods of depositing initially flowable dielectric films on substrates are described. The methods include introducing silicon-containing precursor to a deposition chamber that contains the substrate. The methods further include generating at least one excited precursor, such as radical nitrogen or oxygen precursor, with a remote plasma system located outside the deposition chamber. The excited precursor is also introduced to the deposition chamber, where it reacts with the silicon-containing precursor in a reaction zone deposits the initially flowable film on the substrate. The flowable film may be treated in, for example, a steam environment to form a silicon oxide film.

    Abstract translation: 描述了在基底上沉积初始可流动介电膜的方法。 所述方法包括将含硅前体引入到包含基底的沉积室中。 所述方法还包括使用位于沉积室外部的远程等离子体系统产生至少一种被激发的前体，例如自由基氮或氧前体。 激发的前体也被引入沉积室，在反应区中与沉淀室中的含硅前体反应，将初始可流动的膜沉积在基底上。 可流动膜可以在例如蒸汽环境中处理以形成氧化硅膜。

Patent Agency Ranking