公开(公告)号：US12033914B2

公开(公告)日：2024-07-09

申请号：US17834753

申请日：2022-06-07

Applicant: Intel Corporation

Inventor： Feras Eid

IPC: H01L23/367 ,  H01L23/42

CPC classification number: H01L23/3675 ,  H01L23/42

Abstract: A device package and a method of forming a device package are described. The device package includes a lid with one or more legs on an outer periphery of the lid, a top surface, and a bottom surface, where the lid is disposed on the substrate. The legs of the lid are attached to the substrate with a sealant. The device package also has one or more dies disposed on the substrate. The die(s) are below the bottom surface of the lid, where each of the dies has a top surface and a bottom surface. The device package further includes a retaining structure disposed between the bottom surface of the lid and the top surface of the die, where the retaining structure has one or more inner walls. The device package includes a thermal interface material disposed within the inner walls of the retaining structure and above the top surface of the die.

公开(公告)号：US11948906B2

公开(公告)日：2024-04-02

申请号：US16785014

申请日：2020-02-07

Applicant: INTEL CORPORATION

Inventor： Feras Eid ,  Joe Walczyk ,  Weihua Tang ,  Akhilesh Rallabandi ,  Marco Aurelio Cartas Ayala

IPC: H01L23/00

CPC classification number: H01L24/29 ,  H01L2224/29287 ,  H01L2224/29293 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2924/14 ,  H01L2924/351

Abstract: An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.

公开(公告)号：US20240063179A1

公开(公告)日：2024-02-22

申请号：US17821009

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Krishna Vasanth Valavala ,  Kimin Jun ,  Shawna M. Liff ,  Johanna M. Swan ,  Debendra Mallik ,  Feras Eid ,  Xavier Francois Brun ,  Bhaskar Jyoti Krishnatreya

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L21/56

CPC classification number: H01L25/0652 ,  H01L25/50 ,  H01L24/20 ,  H01L24/08 ,  H01L21/568 ,  H01L24/19 ,  H01L24/06 ,  H01L2224/221 ,  H01L2224/211 ,  H01L2224/08225 ,  H01L2224/19 ,  H01L2224/0612 ,  H01L2224/06181 ,  H01L24/13 ,  H01L2224/13025 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/381

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a dielectric layer having one or more conductive traces and a surface; a microelectronic subassembly on the surface of the dielectric layer, the microelectronic subassembly including a first die and a through-dielectric via (TDV) surrounded by a dielectric material, wherein the first die is at the surface of the dielectric layer; a second die and a third die on the first die and electrically coupled to the first die by interconnects having a pitch of less than 10 microns, and wherein the TDV is electrically coupled at a first end to the dielectric layer and at an opposing second end to the second die; and a substrate on and coupled to the second and third dies; and an insulating material on the surface of the dielectric layer and around the microelectronic subassembly.

公开(公告)号：US20240063120A1

公开(公告)日：2024-02-22

申请号：US17820961

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Shawna M. Liff ,  Debendra Mallik ,  Christopher M. Pelto ,  Kimin Jun ,  Johanna M. Swan ,  Lei Jiang ,  Feras Eid ,  Krishna Vasanth Valavala ,  Henning Braunisch ,  Patrick Morrow ,  William J. Lambert

IPC: H01L23/528 ,  H01L23/00 ,  H01L25/065 ,  H01L23/48 ,  H01L23/498 ,  H01L23/522 ,  H01L21/48

CPC classification number: H01L23/5286 ,  H01L24/08 ,  H01L24/05 ,  H01L24/16 ,  H01L25/0652 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5283 ,  H01L23/5226 ,  H01L24/80 ,  H01L21/4853 ,  H01L21/4857 ,  H01L2924/37001 ,  H01L2924/3841 ,  H01L2924/3512 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/16225

Abstract: Embodiments of a microelectronic assembly comprise: a plurality of layers of integrated circuit (IC) dies, each layer coupled to adjacent layers by first interconnects having a pitch of less than 10 micrometers between adjacent first interconnects; an end layer in the plurality of layers proximate to a first side of the plurality of layers comprises a dielectric material around IC dies in the end layer and a through-dielectric via (TDV) in the dielectric material of the end layer; a support structure coupled to the first side of the plurality of layers, the support structure comprising a structurally stiff base with conductive traces proximate to the end layer, the conductive traces coupled to the end layer by second interconnects; and a package substrate coupled to a second side of the plurality of layers, the second side being opposite to the first side.

公开(公告)号：US20240061194A1

公开(公告)日：2024-02-22

申请号：US17821019

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  David Hui ,  Haris Khan Niazi ,  Wenhao Li ,  Bhaskar Jyoti Krishnatreya ,  Henning Braunisch ,  Shawna M. Liff ,  Jiraporn Seangatith ,  Johanna M. Swan ,  Krishna Vasanth Valavala ,  Xavier Francois Brun ,  Feras Eid

IPC: G02B6/42

CPC classification number: G02B6/4274 ,  G02B6/4204

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include an interconnect die in a first layer surrounded by a dielectric material; a processor integrated circuit (processor IC) and an integrated circuit (IC) in a second layer, the second layer on the first layer, wherein the interconnect die is electrically coupled to the processor IC and the IC by first interconnects having a pitch of less than 10 microns between adjacent first interconnects; a photonic integrated circuit (PIC) and a substrate in a third layer, the third layer on the second layer, wherein the PIC has an active surface, and wherein the active surface of the PIC is coupled to the IC by second interconnects having a pitch of less than 10 microns between adjacent second interconnects; and a fiber connector optically coupled to the active surface of the PIC.

公开(公告)号：US11854932B2

公开(公告)日：2023-12-26

申请号：US16721122

申请日：2019-12-19

Applicant: Intel Corporation

Inventor： Feras Eid ,  Chandra Mohan Jha ,  Je-Young Chang

IPC: H01L23/36 ,  H01L23/367 ,  H01L23/373 ,  H01L23/48

CPC classification number: H01L23/3672 ,  H01L23/373 ,  H01L23/481

Abstract: Embodiments disclosed herein include electronic packages and thermal solutions for such electronic packages. In an embodiment, an electronic package comprises, a package substrate with a first surface, a second surface opposite from the first surface, and a sidewall surface connecting the first surface to the second surface. In an embodiment, the electronic package further comprises a heat spreader, where a first portion of the heat spreader is attached to the first surface of the package substrate and a second portion of the heat spreader is attached to the second surface of the package substrate. In an embodiment, a third portion of the heat spreader adjacent to the sidewall surface of the package substrate connects the first portion of the heat spreader to the second portion of the heat spreader.

公开(公告)号：US11823972B2

公开(公告)日：2023-11-21

申请号：US16040746

申请日：2018-07-20

Applicant: Intel Corporation

Inventor： Feras Eid ,  Adel Elsherbini ,  Johanna Swan

IPC: H01L23/367 ,  H01L25/065 ,  H01L23/498 ,  H01L23/373

CPC classification number: H01L23/367 ,  H01L23/3737 ,  H01L23/49838 ,  H01L25/0657 ,  H01L2225/06513 ,  H01L2225/06517

Abstract: An integrated circuit assembly may be formed having a substrate, a first integrated circuit device electrically attached to the substrate, a second integrated circuit device electrically attached to the first integrated circuit device, and a heat dissipation device comprising at least one first thermally conductive structure proximate at least one of the first integrated circuit device, the second integrated circuit device, and the substrate; and a second thermally conductive structure disposed over the first thermally conductive structure(s), the first integrated circuit device, and the second integrated circuit device, wherein the first thermally conductive structure(s) have a lower electrical conductivity than an electrical conductivity of the second thermally conductive structure. The first thermally conductive structure(s) may be formed by an additive process or may be pre-formed and attached to at least one of the first integrated circuit device, the second integrated circuit device, and the substrate.

公开(公告)号：US11784181B2

公开(公告)日：2023-10-10

申请号：US17580787

申请日：2022-01-21

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Adel A. Elsherbini ,  Feras Eid ,  Veronica Aleman Strong ,  Johanna M. Swan

IPC: H01L27/02 ,  H01L23/528 ,  H01L29/24 ,  H01L29/861 ,  H01L29/47 ,  H01L29/872 ,  H01L29/45

CPC classification number: H01L27/0255 ,  H01L23/5286 ,  H01L27/0248 ,  H01L29/24 ,  H01L29/45 ,  H01L29/47 ,  H01L29/8613 ,  H01L29/872

Abstract: Embodiments may relate to a die with a front-end and a backend. The front-end may include a transistor. The backend may include a signal line, a conductive line, and a diode that is communicatively coupled with the signal line and the conductive line. Other embodiments may be described or claimed.

公开(公告)号：US11784108B2

公开(公告)日：2023-10-10

申请号：US16533152

申请日：2019-08-06

Applicant: Intel Corporation

Inventor： Feras Eid ,  Telesphor Kamgaing ,  Georgios Dogiamis ,  Aleksandar Aleksov ,  Johanna M. Swan

IPC: H01L23/427 ,  H01L23/38 ,  H01L23/373 ,  H01L23/31 ,  H01L23/48 ,  H01L25/16 ,  H01L23/66 ,  H03H9/46 ,  H03H9/05

CPC classification number: H01L23/427 ,  H01L23/3157 ,  H01L23/373 ,  H01L23/38 ,  H01L23/481 ,  H01L23/66 ,  H03H9/46 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/6677

Abstract: Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

公开(公告)号：US11776869B2

公开(公告)日：2023-10-03

申请号：US17718031

申请日：2022-04-11

Applicant: Intel Corporation

Inventor： Feras Eid ,  Johanna M. Swan ,  Sergio Chan Arguedas ,  John J. Beatty

IPC: H01L23/367 ,  H01L21/48 ,  H01L23/00 ,  H01L23/10 ,  H01L49/02 ,  H01L23/42

CPC classification number: H01L23/3675 ,  H01L21/4882 ,  H01L28/40 ,  H01L23/10 ,  H01L23/42 ,  H01L24/30 ,  H01L24/32

Abstract: A device package and a method of forming a device package are described. The device package has dies disposed on a substrate, and one or more layers with a high thermal conductivity, referred to as the highly-conductive (HC) intermediate layers, disposed on the dies on the substrate. The device package further includes a lid with legs on an outer periphery of the lid, a top surface, and a bottom surface. The legs of the lid are attached to the substrate with a sealant. The bottom surface of the lid is disposed over the one or more HC intermediate layers and the one or more dies on the substrate. The device package may also include thermal interface materials (TIMs) disposed on the HC intermediate layers. The TIMs may be disposed between the bottom surface of the lid and one or more top surfaces of the HC intermediate layers.