SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    14.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20140103379A1

    公开(公告)日:2014-04-17

    申请号:US14054868

    申请日:2013-10-16

    Abstract: The invention provides semiconductor light-emitting devices which have a semiconductor layer on a principal surface of a translucent substrate and a reflective layer on a second principal surface opposite to the principal surface having the semiconductor layer, which enables that the peeling of the reflective layer from the translucent substrate is suppressed. A semiconductor light-emitting device includes a first metal layer disposed in contact with a second principal surface of a translucent substrate, a second metal layer disposed in contact with at least the second principal surface or a side surface of the translucent substrate around the first metal layer, and a third metal layer disposed on the second metal layer. The first metal layer has a reflectance with respect to a peak wavelength of light emitted from an emitting layer higher than the reflectance of the second metal layer. The second metal layer has an adhesion with respect to the translucent substrate higher than the adhesion between the first metal layer and the translucent substrate.

    Abstract translation: 本发明提供了在半透明基板的主表面上具有半导体层的半导体发光器件和与具有半导体层的主表面相对的第二主表面上的反射层,其能够使反射层从 透光性基板被抑制。 半导体发光器件包括与透光性基板的第二主面接触配置的第一金属层,与第一金属的至少第二主面或半透明基板的侧面相接触地设置的第二金属层 层和设置在第二金属层上的第三金属层。 第一金属层相对于从发光层发射的光的峰值波长的反射率高于第二金属层的反射率。 第二金属层相对于透光性基板具有比第一金属层和透光性基板之间的粘合性高的粘接性。

    LIGHT EMITTING DEVICE
    15.
    发明申请

    公开(公告)号:US20170271559A1

    公开(公告)日:2017-09-21

    申请号:US15614233

    申请日:2017-06-05

    Abstract: A side-view type light emitting device has a bottom surface thereof as a light emission surface and a first lateral surface thereof as a mounting surface for mounting on a mounting substrate, and includes a semiconductor layered structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first connecting electrode exposed from the first lateral surface and electrically connected to the first semiconductor layer; a first electrode disposed between the first semiconductor layer and the first connecting electrode; a second connecting electrode exposed from the first lateral surface; a metal wire electrically connecting an upper surface of the second semiconductor layer to the second connecting electrode; and a resin layer. In a direction perpendicular to the light emission surface, the active layer does not overlap with the first connecting electrode, and the active layer does not overlap with the second connecting electrode.

    METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
    17.
    发明申请
    METHOD OF MANUFACTURING LIGHT EMITTING DEVICE 有权
    制造发光装置的方法

    公开(公告)号:US20160064621A1

    公开(公告)日:2016-03-03

    申请号:US14838255

    申请日:2015-08-27

    Abstract: A method of manufacturing a light emitting device includes providing a wafer having a substrate and a plurality of semiconductor stacked-layer bodies stacked on the substrate, an upper surface of the substrate being exposed at an outer peripheral region of each of the plurality of semiconductor stack bodies in a plan view, forming a separation layer integrally covering the upper surface of the substrate and an upper surface of the semiconductor stacked-layer body, the separation layer including a separation boundary, forming a support member on the separation layer, removing the substrate, forming a wavelength conversion layer on a side of the semiconductor stack body and the separation layer where the substrate is removed, the wavelength conversion layer made of a resin containing a wavelength conversion member, and removing the wavelength conversion layer located in the outer peripheral region by separating the separation layer at the separation boundary.

    Abstract translation: 一种制造发光器件的方法包括提供具有衬底的晶片和堆叠在衬底上的多个半导体叠层体,衬底的上表面暴露在多个半导体叠层中的每一个的外周区域 主体,形成一体地覆盖基板的上表面的分离层和半导体层叠体的上表面,分离层包括分离边界,在分离层上形成支撑部件,除去基板 在半导体堆叠体的一侧形成波长转换层,除去衬底的分离层,由包含波长转换构件的树脂制成的波长转换层,以及去除位于外围区域中的波长转换层 通过在分离边界处分离分离层。

    LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    18.
    发明申请
    LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号:US20150295152A1

    公开(公告)日:2015-10-15

    申请号:US14683164

    申请日:2015-04-10

    Abstract: A light emitting device includes a semiconductor light emitting element, a resin layer, and a metal wire. The semiconductor light emitting element includes a semiconductor stack and an electrode. The semiconductor stack has one surface. The metal wire has a first surface, a second surface opposite to the first surface, and an end surface between the first surface and the second surface. The metal wire is provided in the resin layer and electrically connected to an upper surface of the electrode via the first surface. The end surface of the metal wire is exposed from the resin layer. A lower end of the end surface closest to the first surface of the metal wire that is exposed from the resin layer is provided at an opposite side of the one surface of the semiconductor stack with respect to the upper surface of the electrode.

    Abstract translation: 发光器件包括半导体发光元件,树脂层和金属线。 半导体发光元件包括半导体叠层和电极。 半导体堆叠具有一个表面。 金属线具有第一表面,与第一表面相对的第二表面,以及在第一表面和第二表面之间的端面。 金属线设置在树脂层中,并且经由第一表面电连接到电极的上表面。 金属线的端面从树脂层露出。 在半导体堆叠的一个表面相对于电极的上表面的相反侧设置从树脂层露出的最靠近金属线的第一表面的端面的下端。

    LIGHT EMITTING DEVICE
    19.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20150060934A1

    公开(公告)日:2015-03-05

    申请号:US14477617

    申请日:2014-09-04

    Abstract: A side-view type light emitting device having a bottom surface thereof as a light emission surface and one side surface thereof as amounting surface for mounting on amounting substrate includes a stacked semiconductor layer having a first semiconductor layer, an active layer, and a second semiconductor layer which are stacked in that order from a side of the bottom surface; a first connecting electrode exposed from the one side surface and electrically connected to the first semiconductor layer; a metal wire having one end thereof electrically connected to an upper surface of the second semiconductor layer; a second connecting electrode exposed from the one side surface and electrically connected to the other end of the metal wire; and a resin layer which covers at least a part of each of the first semiconductor layer, the second semiconductor layer, the first connecting electrode, the second connecting electrode and the metal wire and which is configured to form an upper surface and side surfaces of the light emitting device.

    Abstract translation: 将其底表面作为发光面的侧视型发光器件和作为用于安装在数量基片上的表面的一个侧面包括具有第一半导体层,有源层和第二半导体的叠层半导体层 层,其从该底面的一侧依次层叠; 从所述一个侧表面暴露并电连接到所述第一半导体层的第一连接电极; 金属线,其一端电连接到第二半导体层的上表面; 从所述一个侧表面暴露并且电连接到所述金属线的另一端的第二连接电极; 以及树脂层,其覆盖第一半导体层,第二半导体层,第一连接电极,第二连接电极和金属线中的每一个的至少一部分,并且被配置为形成上表面和 发光装置。

    METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT
    20.
    发明申请
    METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT 有权
    制造发光元件的方法

    公开(公告)号:US20140227813A1

    公开(公告)日:2014-08-14

    申请号:US14177329

    申请日:2014-02-11

    CPC classification number: H01L33/387 H01L33/0095 H01L33/44 H01L33/62

    Abstract: A light emitting element for flip-chip mounting having a flat mounting surface which allows a decrease in the width of the streets of a wafer. In the light emitting element, the insulating member filling around the bumps and flattening the upper surface is formed with a margin of a region with a width which is equal to or larger than the width of the streets on the dividing lines, so that at the time of dividing the wafer along the dividing lines, the insulating member is not processed, which allows designing of the streets with a small width.

    Abstract translation: 一种用于倒装芯片安装的发光元件,其具有平坦的安装表面,其允许晶片的街道宽度的减小。 在发光元件中,填充凸起并使上表面变平的绝缘构件形成有宽度等于或大于分界线上的街道宽度的区域的边缘,使得在 分割晶片沿着分割线的时间,绝缘构件不被处理,这允许以小的宽度设计街道。

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