公开(公告)号：US20170200862A1

公开(公告)日：2017-07-13

申请号：US15472114

申请日：2017-03-28

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Thomas Wunderer ,  Christopher L. Chua ,  Noble M. Johnson

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01L33/20 ,  H01L33/06

CPC classification number: H01L33/48 ,  H01L27/15 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L2933/0016

Abstract: Diode includes first metal layer, coupled to p-type III-N layer and to first terminal, has a substantially equal lateral size to the p-type III-N layer. Central portion of light emitting region on first side and first metal layer includes first via that is etched through p-type portion, light emitting region and first part of n-type III-N portion. Second side of central portion of light emitting region that is opposite to first side includes second via connected to first via. Second via is etched through second part of n-type portion. First via includes second metal layer coupled to intersection between first and second vias. Electrically-insulating layer is coupled to first metal layer, first via, and second metal layer. First terminals are exposed from electrically-insulating layer. Third metal layer including second terminal is coupled to n-type portion on second side of light emitting region and to second metal layer through second via.

公开(公告)号：US20170069788A1

公开(公告)日：2017-03-09

申请号：US15345046

申请日：2016-11-07

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer

IPC: H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L21/78 ,  H01L29/20 ,  H01L29/778 ,  H01L29/861 ,  H01L21/02 ,  H01L33/06 ,  H01L33/40

CPC classification number: H01L33/12 ,  H01L21/02458 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664 ,  H01L21/7813 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/7787 ,  H01L29/8613 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01S5/0421 ,  H01S5/183 ,  H01S5/187 ,  H01S5/34333

Abstract: A thin film device described herein includes a first thin film layer, a second film layer and a heterostructure within the second film layer. The first thin film layer is atop a substrate. The second thin film layer is grown from the first thin film layer through a patterned mask, having openings, under selective area growth (SAG) conditions. The second thin film layer is configured to be released from the first thin film layer by etching a trench. The etched trench may provide access to the patterned mask and the patterned mask may be eliminated with a wet etchant.

Abstract translation: 本文所述的薄膜器件包括第一薄膜层，第二膜层和第二膜层内的异质结构。 第一薄膜层位于基底之上。 在选择性面积生长（SAG）条件下，第二薄膜层通过具有开口的图案化掩模从第一薄膜层生长。 第二薄膜层被配置为通过蚀刻沟槽从第一薄膜层释放。 蚀刻的沟槽可以提供对图案化掩模的访问，并且可以用湿蚀刻剂去除图案化掩模。

公开(公告)号：US20160336481A1

公开(公告)日：2016-11-17

申请号：US15209715

申请日：2016-07-13

Applicant: Palo Alto Research Center Incorporated

Inventor： John E. Northrup ,  Bowen Cheng ,  Christopher L. Chua ,  Thomas Wunderer ,  Noble M. Johnson ,  Zhihong Yang

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01S5/343 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34 ,  B82Y20/00 ,  H01S5/042

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/3404 ,  H01S5/34333

Abstract: A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.

Abstract translation: 发光器件包括具有由掺杂有p型掺杂剂的Al x Ga Ga x Ga x Ga x Ga N交替层和掺杂有p型掺杂剂的Al x O x Ga 1-x low N形成的短周期超晶格（SPSL）的p侧异质结构，其中xlow≤xhigh≤ 0.9。 SPSL的每个层具有小于或等于约六个双层AlGaN的厚度。

公开(公告)号：US20160233375A1

公开(公告)日：2016-08-11

申请号：US15012502

申请日：2016-02-01

Applicant: Palo Alto Research Center Incorporated

Inventor： John E. Northrup ,  Christopher L. Chua ,  Michael A. Kneissl ,  Thomas Wunderer ,  Noble M. Johnson

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/04

CPC classification number: H01L33/0025 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/32

Abstract: Light emitting devices having an enhanced degree of polarization, PD, and methods for fabricating such devices are described. A light emitting device may include a light emitting region that is configured to emit light having a central wavelength, λ, and a degree of polarization, PD, where PD>0.006λ−b for 200 nm≦λ≦400 nm, wherein b≦1.5.

Abstract translation: 描述了具有增强的极化度PD的发光器件和用于制造这种器件的方法。 发光器件可以包括配置为发射具有中心波长λ和极化度PD的光的发光区域，其中对于200nm≤λ≤400nm，其中PD>0.006λ-b，其中b≤ 1.5。

公开(公告)号：US20160164260A1

公开(公告)日：2016-06-09

申请号：US14563847

申请日：2014-12-08

Applicant: Palo ALto Research Center Incorporated

Inventor： Christopher L. Chua ,  Thomas Wunderer ,  Zhihong Yang

IPC: H01S5/30

CPC classification number: H01S5/30 ,  H01S5/2031 ,  H01S5/3013 ,  H01S5/309 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/32341 ,  H01S5/34333

Abstract: An ultraviolet laser diode having multiple portions in the n-cladding layer is described herein. The laser diode comprises a p-cladding layer, an n-cladding layer, a waveguide, and a light-emitting region. The n-cladding layer includes at least a first portion and a second portion. The first portion maintains material quality of the laser diode, while the second portion pulls the optical mode from the p-cladding layer toward the active region. The first portion may have a higher aluminum composition than the second portion. The waveguide is coupled to the n-cladding layer and the light-emitting region is coupled to the waveguide. The light-emitting region is located between the n-cladding layer and the p-cladding layer. Other embodiments are also described.

Abstract translation: 本文描述了在n包层中具有多个部分的紫外激光二极管。 激光二极管包括p包层，n包层，波导和发光区域。 n包层至少包括第一部分和第二部分。 第一部分保持激光二极管的材料质量，而第二部分将光学模式从p包覆层拉向有源区。 第一部分可以具有比第二部分更高的铝组成。 波导耦合到n包层，并且发光区域耦合到波导。 发光区域位于n包层和p包层之间。 还描述了其它实施例。

公开(公告)号：US09106053B2

公开(公告)日：2015-08-11

申请号：US13652136

申请日：2012-10-15

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer

IPC: H01S5/00 ,  H01S5/12 ,  H01S5/183 ,  H01S5/04 ,  H01S5/343 ,  B82Y20/00

CPC classification number: H01S5/1228 ,  B82Y20/00 ,  H01S3/09408 ,  H01S5/04 ,  H01S5/041 ,  H01S5/124 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/18383 ,  H01S5/34333

Abstract: A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λlase. Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at λlase.

Abstract translation: 半导体表面发射激光器（SEL）包括由间隔层隔开的包括量子阱结构的有源区。 量子阱结构被配置为在激光波长λlase处为SEL提供光学增益。 每个量子阱结构和相邻的间隔层被配置成形成分布式布拉格反射器（DBR）的光学对。 包括多个DBR光对的有源区被配置为以λlase为SEL提供光学反馈。

公开(公告)号：US20140133506A1

公开(公告)日：2014-05-15

申请号：US13652136

申请日：2012-10-15

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer

IPC: H01S5/187

CPC classification number: H01S5/1228 ,  B82Y20/00 ,  H01S3/09408 ,  H01S5/04 ,  H01S5/041 ,  H01S5/124 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/18383 ,  H01S5/34333

Abstract: A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λlase. Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at λlase.

Abstract translation: 半导体表面发射激光器（SEL）包括由间隔层隔开的包括量子阱结构的有源区。 量子阱结构被配置为在激光波长λlase处为SEL提供光学增益。 每个量子阱结构和相邻的间隔层被配置成形成分布式布拉格反射器（DBR）的光学对。 包括多个DBR光对的有源区被配置为以λlase为SEL提供光学反馈。

公开(公告)号：US11988868B2

公开(公告)日：2024-05-21

申请号：US17159406

申请日：2021-01-27

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer

IPC: C30B25/04 ,  C30B29/40 ,  G02B6/122 ,  H01L21/02 ,  G02B6/12

CPC classification number: G02B6/1225 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02642 ,  G02B2006/1213 ,  G02B2006/12178

Abstract: A mask material is deposited on a substrate or growth template. The substrate or growth template is compatible with crystalline growth of a crystalline optical material. Patterned portions of the mask material are removed to expose one or more regions of the substrate or growth template. The one or more regions have target shapes of one or more optical components. The crystalline optical material is selectively grown in the one or more regions to form the one or more optical components.

公开(公告)号：US20240145629A1

公开(公告)日：2024-05-02

申请号：US17977025

申请日：2022-10-31

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Thomas Wunderer

IPC: H01L33/22 ,  H01L33/04

CPC classification number: H01L33/22 ,  H01L33/04

Abstract: A light emitting diode array includes a growth mask having an array of closed shapes on a III-N layer. An array of group III-N inverted pyramids are epitaxially grown around the growth mask. The inverted pyramids include {10-11} or {11-22} facets and hexagonal bases. An array of III-N c-plane surfaces are parallel with the substrate and join the {10-11} or {11-22} facets of adjacent ones of the III-N inverted pyramids. A quantum well layer of a III-N compound is formed on the {10-11} or {11-22} facets and the c-plane surfaces. The quantum well layer has a first thickness on the {10-11} or {11-22} facets that forms first light emitting elements. The quantum well layer has a second thickness on the c-plane surfaces that forms second light emitting elements. The second light emitting elements emit light at a longer wavelength than the first light emitting elements.

公开(公告)号：US20230369045A1

公开(公告)日：2023-11-16

申请号：US17744535

申请日：2022-05-13

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Thomas Wunderer

IPC: H01L21/02 ,  H01L21/027 ,  H01L29/66 ,  H01L31/18 ,  H01L23/66

CPC classification number: H01L21/0254 ,  H01L21/02389 ,  H01L21/027 ,  H01L29/66431 ,  H01L31/1856 ,  H01L23/66 ,  H01L2223/6627

Abstract: An apparatus includes an epitaxial structure comprising a bottom layer, channel walls formed on the bottom layer, and a top layer that encloses the channel walls and forms microchannels therebetween. The bottom layer, channel walls, and covering layer are a monolithic, crystalline formation. An electronic or optoelectronic device is monolithically formed on a first build surface of the bottom layer or the top layer. The electronic or optoelectronic device is energy-coupled to the microchannels through the bottom layer or the top layer.