公开(公告)号：US20160163883A1

公开(公告)日：2016-06-09

申请号：US15041019

申请日：2016-02-10

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L29/866

CPC classification number: H01L29/866 ,  H01L27/0255 ,  H01L29/0692 ,  H01L29/417 ,  H01L29/66106 ,  H01L29/747

Abstract: A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode which are defined on the semiconductor substrate, and a plurality of diffusion regions of a second conductivity type, which are defined at intervals from one another on a surface portion of the semiconductor substrate, to define p-n junctions with the semiconductor substrate, and the plurality of diffusion regions include diode regions which are electrically connected to the first electrode and the second electrode, and pseudo-diode regions which are electrically isolated from the first electrode and the second electrode.

公开(公告)号：US20150249055A1

公开(公告)日：2015-09-03

申请号：US14703928

申请日：2015-05-05

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L23/00 ,  H01L29/872 ,  H01L29/06 ,  H01L27/102

CPC classification number: H01L29/872 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/5223 ,  H01L23/5228 ,  H01L23/544 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L27/0255 ,  H01L27/0629 ,  H01L27/067 ,  H01L27/0722 ,  H01L27/1021 ,  H01L28/10 ,  H01L28/20 ,  H01L28/24 ,  H01L28/40 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/417 ,  H01L29/66136 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/866 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2223/54493 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05144 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/11009 ,  H01L2224/11464 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: [Theme] To provide a chip diode, with which a p-n junction formed on a semiconductor layer can be prevented from being destroyed and fluctuations in characteristics can be suppressed even when a large stress is applied to a pad for electrical connection with the exterior, and a diode package that includes the chip diode.[Solution] A chip diode 15 includes an epitaxial layer 21 with a p-n junction 28, constituting a diode element 29, formed therein, an anode electrode 34 disposed along a top surface 22 of the epitaxial layer 21, electrically connected to a diode impurity region 23, which is the p-side pole of the p-n junction 28, and having a pad 37 for electrical connection with the exterior, and a cathode electrode 41 electrically connected to the epitaxial layer 21, which is the n-side pole of the p-n junction 28, and the pad 37 is provided at a position separated from a position directly above the p-n junction 28.

Abstract translation: [主题]提供一种芯片二极管，可以防止在半导体层上形成的pn结被破坏，并且即使当大的应力施加到与外部电连接的焊盘时也可以抑制特性波动，并且 包括芯片二极管的二极管封装。 芯片二极管15包括形成有二极管元件29的pn结28的外延层21，沿着外延层21的顶表面22设置的阳极电极34，电极连接到二极管杂质区 23是pn接点28的p侧极，并且具有用于与外部电连接的焊盘37，以及与外延层21电连接的阴极41，该外延层21是pn的n侧极 接头28，并且垫37设置在与正好在pn结28上方的位置分离的位置。

公开(公告)号：US20200013737A1

公开(公告)日：2020-01-09

申请号：US16575557

申请日：2019-09-19

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L23/00 ,  H01L21/78 ,  H01L21/683 ,  H01L29/866 ,  H01L23/482 ,  H01L23/544 ,  H01L29/861 ,  H01L29/872 ,  H01L29/06

Abstract: A chip part according to the present invention includes a substrate having a penetrating hole, a pair of electrodes formed on a front surface of the substrate and including one electrode overlapping the penetrating hole in a plan view and another electrode facing the one electrode, and an element formed on the front surface side of the substrate and electrically connected to the pair of electrodes.

公开(公告)号：US20190214507A1

公开(公告)日：2019-07-11

申请号：US16353674

申请日：2019-03-14

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L29/866 ,  H01L29/06 ,  H01L29/66 ,  H01L29/417 ,  H01L27/02 ,  H01L29/747

CPC classification number: H01L29/866 ,  H01L27/0255 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/417 ,  H01L29/66106 ,  H01L29/747

Abstract: A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode which are defined on the semiconductor substrate, and a plurality of diffusion regions of a second conductivity type, which are defined at intervals from one another on a surface portion of the semiconductor substrate, to define p-n junctions with the semiconductor substrate, and the plurality of diffusion regions include diode regions which are electrically connected to the first electrode and the second electrode, and pseudo-diode regions which are electrically isolated from the first electrode and the second electrode.

公开(公告)号：US20190148040A1

公开(公告)日：2019-05-16

申请号：US16231937

申请日：2018-12-24

Applicant: ROHM CO., LTD.

Inventor： Hiroshi TAMAGAWA ,  Hiroki YAMAMOTO ,  Katsuya MATSUURA ,  Yasuhiro KONDO

IPC: H01C1/14 ,  H01G5/38 ,  H01G2/16 ,  H01F27/40 ,  H01F27/28 ,  H01C10/50 ,  H01C10/16 ,  H01G5/011 ,  H01L27/08 ,  H01C17/00 ,  H01C17/23 ,  H05K3/34 ,  H01L33/62 ,  H01G4/38 ,  H01G4/40 ,  H01L25/10 ,  H01L25/13 ,  H01L27/15 ,  H01G4/33 ,  H01G5/40 ,  H05K1/18 ,  H01F29/08 ,  H01F41/04 ,  H01L23/00 ,  H01F29/00

Abstract: A method for manufacturing a chip component includes forming an element, which includes a plurality of element parts, on a substrate. A plurality of fuses are formed, for disconnectably connecting each of the plurality of element parts to an external connection electrode. The external connection electrode, which is arranged to provide external connection for the element, is formed by electroless plating on the substrate.

公开(公告)号：US20180323011A1

公开(公告)日：2018-11-08

申请号：US16031212

申请日：2018-07-10

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO ,  Keishi WATANABE ,  Hiroshi TAMAGAWA

IPC: H01G4/30 ,  H01L29/66 ,  H01G2/06 ,  H01G4/005 ,  H01G4/228 ,  H01G4/40 ,  H01L21/66 ,  H01L23/522 ,  H01L23/00 ,  H01L27/06 ,  H01L27/10 ,  H01L27/24 ,  H05K1/18 ,  H05K1/16 ,  H05K1/11 ,  H01L29/94 ,  H01L49/02 ,  H05K3/34 ,  H01G4/232

Abstract: A chip capacitor according to the present invention includes a substrate, a pair of external electrodes formed on the substrate, a capacitor element connected between the pair of external electrodes, and a bidirectional diode connected between the pair of external electrodes and in parallel to the capacitor element. Also, a circuit assembly according to the present invention includes the chip capacitor according to the present invention and a mounting substrate having lands, soldered to the external electrodes, on a mounting surface facing a front surface of the substrate.

公开(公告)号：US20180047854A1

公开(公告)日：2018-02-15

申请号：US15783686

申请日：2017-10-13

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L29/866 ,  H01L29/66 ,  H01L29/747 ,  H01L27/02 ,  H01L29/417 ,  H01L29/06

CPC classification number: H01L29/866 ,  H01L27/0255 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/417 ,  H01L29/66106 ,  H01L29/747

Abstract: A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode which are defined on the semiconductor substrate, and a plurality of diffusion regions of a second conductivity type, which are defined at intervals from one another on a surface portion of the semiconductor substrate, to define p-n junctions with the semiconductor substrate, and the plurality of diffusion regions include diode regions which are electrically connected to the first electrode and the second electrode, and pseudo-diode regions which are electrically isolated from the first electrode and the second electrode.

公开(公告)号：US20180040610A1

公开(公告)日：2018-02-08

申请号：US15784985

申请日：2017-10-16

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L27/08 ,  H01L29/66 ,  H01L49/02 ,  H01L29/94

CPC classification number: H01L27/0805 ,  H01L28/60 ,  H01L29/66181 ,  H01L29/94

Abstract: A discrete capacitor of the present invention includes a substrate having a front surface portion, an impurity diffusion layer formed on the front surface portion of the substrate, an oxide film formed on the substrate and having a first opening to selectively expose the impurity diffusion layer, a dielectric film formed on the impurity region having been exposed from the oxide film, and a first electrode opposed to the impurity diffusion layer with the dielectric film therebetween, wherein the impurity concentration on the front surface portion of the impurity diffusion layer is 5×1019 cm−3 or more.

公开(公告)号：US20170250029A1

公开(公告)日：2017-08-31

申请号：US15597105

申请日：2017-05-16

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO ,  Keishi WATANABE ,  Hiroshi TAMAGAWA

IPC: H01G7/06 ,  H01G4/40 ,  H01G2/06

CPC classification number: H01G4/30 ,  H01G2/06 ,  H01G4/005 ,  H01G4/228 ,  H01G4/232 ,  H01G4/40 ,  H01L22/14 ,  H01L22/20 ,  H01L23/5223 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0629 ,  H01L27/0676 ,  H01L27/101 ,  H01L27/2409 ,  H01L28/40 ,  H01L29/66189 ,  H01L29/94 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/0002 ,  H05K1/111 ,  H05K1/162 ,  H05K1/18 ,  H05K1/181 ,  H05K3/3436 ,  H05K2201/10015 ,  H05K2201/10045 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

Abstract: A chip capacitor according to the present invention includes a substrate, a pair of external electrodes formed on the substrate, a capacitor element connected between the pair of external electrodes, and a bidirectional diode connected between the pair of external electrodes and in parallel to the capacitor element. Also, a circuit assembly according to the present invention includes the chip capacitor according to the present invention and a mounting substrate having lands, soldered to the external electrodes, on a mounting surface facing a front surface of the substrate.

公开(公告)号：US20160276286A1

公开(公告)日：2016-09-22

申请号：US15170910

申请日：2016-06-01

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L23/544 ,  H01L49/02 ,  H01L29/872

CPC classification number: H01L29/872 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/5223 ,  H01L23/5228 ,  H01L23/544 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L27/0255 ,  H01L27/0629 ,  H01L27/067 ,  H01L27/0722 ,  H01L27/1021 ,  H01L28/10 ,  H01L28/20 ,  H01L28/24 ,  H01L28/40 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/417 ,  H01L29/66136 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/866 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2223/54493 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05144 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/11009 ,  H01L2224/11464 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A chip part includes a substrate, an element formed on the substrate, and an electrode formed on the substrate. A recess and/or projection expressing information related to the element is formed at a peripheral edge portion of the substrate.

Abstract translation: 芯片部分包括基板，形成在基板上的元件和形成在基板上的电极。 在基板的周缘部形成表示与该元件有关的信息的凹部和/或凸部。