公开(公告)号：US20190115481A1

公开(公告)日：2019-04-18

申请号：US16210131

申请日：2018-12-05

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L29/872 ,  H01L29/66 ,  H01L29/861 ,  H01L27/06 ,  H01L49/02 ,  H01L29/417 ,  H01L23/00 ,  H01L27/102 ,  H01L23/544 ,  H01L29/06 ,  H01L29/866 ,  H01L23/522 ,  H01L23/495 ,  H01L27/07

CPC classification number: H01L29/872 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/5223 ,  H01L23/5228 ,  H01L23/544 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L27/0255 ,  H01L27/0629 ,  H01L27/067 ,  H01L27/0722 ,  H01L27/1021 ,  H01L28/10 ,  H01L28/20 ,  H01L28/24 ,  H01L28/40 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/417 ,  H01L29/66136 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/866 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2223/54493 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05144 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/11009 ,  H01L2224/11464 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A chip part includes a substrate, an element formed on the substrate, and an electrode formed on the substrate. A recess and/or projection expressing information related to the element is formed at a peripheral edge portion of the substrate.

公开(公告)号：US20150216044A1

公开(公告)日：2015-07-30

申请号：US14581460

申请日：2014-12-23

Applicant: ROHM CO., LTD.

Inventor： Hiroshi TAMAGAWA ,  Yasuhiro KONDO ,  Hiroki YAMAMOTO

IPC: H05K1/02 ,  H05K3/00 ,  H05K1/09 ,  H05K5/00 ,  H05K1/11

CPC classification number: H01L27/016 ,  H01C1/14 ,  H01C1/142 ,  H01C7/003 ,  H01C7/006 ,  H01C17/006 ,  H01G4/012 ,  H01G4/30 ,  H01G4/33 ,  H01L27/0802 ,  H01L27/0805 ,  H01L28/20 ,  H01L28/60 ,  H05K1/167 ,  Y10T29/49158

Abstract: The chip part of the present invention includes a substrate, an electrode on the substrate and having a front surface in which a plurality of recessed portions are formed toward the thickness direction thereof, and an element region having a circuit element that is electrically connected to the electrode.

Abstract translation: 本发明的芯片部分包括基板，基板上的电极，并且具有朝向其厚度方向形成有多个凹部的前表面，以及元件区域，电路元件电连接到 电极。

公开(公告)号：US20180151756A1

公开(公告)日：2018-05-31

申请号：US15823206

申请日：2017-11-27

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L29/872 ,  H01L29/417 ,  H01L29/06

CPC classification number: H01L29/872 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/417 ,  H01L29/66143

Abstract: A Schottky barrier diode includes a semiconductor layer having a major surface, a diode region of a first conductivity type formed in a surface layer portion of the semiconductor layer, a first conductivity type impurity region formed in the surface layer portion of the semiconductor layer and electrically connected to the diode region, a first electrode layer formed on the major surface of the semiconductor layer and forming a Schottky junction with the diode region, a second electrode layer formed on the major surface of the semiconductor layer and forming an ohmic junction with the first conductivity type impurity region, and a contact electrode layer formed on a peripheral region of the major surface of the semiconductor layer surrounding the first electrode layer so as to be electrically connected to the diode region via the semiconductor layer and being electrically connected to the second electrode layer.

公开(公告)号：US20180108628A1

公开(公告)日：2018-04-19

申请号：US15832358

申请日：2017-12-05

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L23/00 ,  H01L21/78 ,  H01L29/872 ,  H01L23/482 ,  H01L23/544 ,  H01L29/866 ,  H01L21/683 ,  H01L29/06 ,  H01L29/861 ,  H01L21/66

CPC classification number: H01L24/06 ,  H01L21/6836 ,  H01L21/78 ,  H01L22/12 ,  H01L23/4824 ,  H01L23/544 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L29/0619 ,  H01L29/8611 ,  H01L29/866 ,  H01L29/872 ,  H01L2221/68313 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2223/54413 ,  H01L2223/5442 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/03 ,  H01L2224/03464 ,  H01L2224/04026 ,  H01L2224/05017 ,  H01L2224/0502 ,  H01L2224/05023 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/0556 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/06051 ,  H01L2224/06151 ,  H01L2224/32013 ,  H01L2224/32054 ,  H01L2224/32057 ,  H01L2224/32105 ,  H01L2224/32237 ,  H01L2224/33151 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/83192 ,  H01L2224/83815 ,  H01L2224/94 ,  H01L2924/10156 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A chip part according to the present invention includes a substrate having a penetrating hole, a pair of electrodes formed on a front surface of the substrate and including one electrode overlapping the penetrating hole in a plan view and another electrode facing the one electrode, and an element formed on the front surface side of the substrate and electrically connected to the pair of electrodes.

公开(公告)号：US20150305159A1

公开(公告)日：2015-10-22

申请号：US14440016

申请日：2013-10-25

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO ,  Keishi WATANABE ,  Hiroshi TAMAGAWA

IPC: H05K1/18 ,  H05K1/11 ,  H05K1/16

CPC classification number: H01G4/30 ,  H01G2/06 ,  H01G4/005 ,  H01G4/228 ,  H01G4/232 ,  H01G4/40 ,  H01L22/14 ,  H01L22/20 ,  H01L23/5223 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0629 ,  H01L27/0676 ,  H01L27/101 ,  H01L27/2409 ,  H01L28/40 ,  H01L29/66189 ,  H01L29/94 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/0002 ,  H05K1/111 ,  H05K1/162 ,  H05K1/18 ,  H05K1/181 ,  H05K3/3436 ,  H05K2201/10015 ,  H05K2201/10045 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

Abstract: A chip capacitor according to the present invention includes a substrate, a pair of external electrodes formed on the substrate, a capacitor element connected between the pair of external electrodes, and a bidirectional diode connected between the pair of external electrodes and in parallel to the capacitor element. Also, a circuit assembly according to the present invention includes the chip capacitor according to the present invention and a mounting substrate having lands, soldered to the external electrodes, on a mounting surface facing a front surface of the substrate.

Abstract translation: 根据本发明的片状电容器包括衬底，形成在衬底上的一对外部电极，连接在一对外部电极之间的电容器元件和连接在该对外部电极之间并与电容器并联的双向二极管 元件。 此外，根据本发明的电路组件包括根据本发明的片状电容器和具有焊盘焊接到外部电极的焊盘的安装基板，在与衬底的前表面相对的安装表面上。

公开(公告)号：US20150280016A1

公开(公告)日：2015-10-01

申请号：US14668384

申请日：2015-03-25

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L29/94 ,  H01L29/66 ,  H01L49/02

CPC classification number: H01L27/0805 ,  H01L28/60 ,  H01L29/66181 ,  H01L29/94

Abstract: A discrete capacitor of the present invention includes a substrate having a front surface portion, an impurity diffusion layer formed on the front surface portion of the substrate, an oxide film formed on the substrate and having a first opening to selectively expose the impurity diffusion layer, a dielectric film formed on the impurity region having been exposed from the oxide film, and a first electrode opposed to the impurity diffusion layer with the dielectric film therebetween, wherein the impurity concentration on the front surface portion of the impurity diffusion layer is 5×1019 cm−3 or more.

Abstract translation: 本发明的分立电容器包括：具有表面部分的基板，形成在基板的前表面部分上的杂质扩散层;形成在基板上的氧化膜，并具有用于选择性地暴露杂质扩散层的第一开口; 形成在从该氧化膜露出的杂质区域上的电介质膜和与该杂质扩散层相对的该杂质扩散层的第一电极，其中该杂质扩散层前表面部分的杂质浓度为5×1019 cm -3以上。

公开(公告)号：US20150255628A1

公开(公告)日：2015-09-10

申请号：US14635627

申请日：2015-03-02

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L29/866 ,  H01L29/417 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L29/866 ,  H01L27/0255 ,  H01L29/0692 ,  H01L29/417 ,  H01L29/66106 ,  H01L29/747

Abstract: A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode which are defined on the semiconductor substrate, and a plurality of diffusion regions of a second conductivity type, which are defined at intervals from one another on a surface portion of the semiconductor substrate, to define p-n junctions with the semiconductor substrate, and the plurality of diffusion regions include diode regions which are electrically connected to the first electrode and the second electrode, and pseudo-diode regions which are electrically isolated from the first electrode and the second electrode.

Abstract translation: 本发明的双向齐纳二极管包括限定在半导体衬底上的第一导电类型的半导体衬底，第一电极和第二电极以及间隔限定的多个第二导电类型的扩散区 在所述半导体衬底的表面部分上彼此定义与所述半导体衬底的pn结，并且所述多个扩散区域包括电连接到所述第一电极和所述第二电极的二极管区域，以及伪二极管区域， 与第一电极和第二电极电隔离。

公开(公告)号：US20170222062A1

公开(公告)日：2017-08-03

申请号：US15488145

申请日：2017-04-14

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO

IPC: H01L29/866 ,  H01L23/482 ,  H01L29/45 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/866 ,  H01L23/4824 ,  H01L29/0615 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/456 ,  H01L29/66106

Abstract: The present invention is directed to a chip diode with a Zener voltage Vz of 4.0 V to 5.5 V, including a semiconductor substrate having a resistivity of 3 mΩ·cm to 5 mΩ·cm and a diffusion layer formed on a surface of the semiconductor substrate and defining a diode junction region with the semiconductor substrate therebetween, in which the diffusion layer has a depth of 0.01 μm to 0.2 μm from the surface of the semiconductor substrate.

公开(公告)号：US20170076842A1

公开(公告)日：2017-03-16

申请号：US15271882

申请日：2016-09-21

Applicant: ROHM CO., LTD.

Inventor： Yasuhiro KONDO ,  Hiroshi TAMAGAWA ,  Hiroki YAMAMOTO

IPC: H01C13/02 ,  H01C1/14 ,  H01G5/019 ,  H01L23/525 ,  H01F29/00 ,  H01G5/38 ,  H01L49/02 ,  H01C10/50 ,  H01C17/00

CPC classification number: H01C13/02 ,  H01C1/14 ,  H01C10/50 ,  H01C17/006 ,  H01C17/06 ,  H01F27/402 ,  H01F29/00 ,  H01G2/16 ,  H01G4/40 ,  H01G5/019 ,  H01G5/38 ,  H01L23/5256 ,  H01L27/0207 ,  H01L27/0814 ,  H01L28/20 ,  H01L2224/16225 ,  Y10T29/49099

Abstract: A chip resistor includes a substrate, and a plurality of resistor elements each having a resistive film provided on the substrate and an interconnection film provided on the resistive film in contact with the resistive film. An electrode is provided on the substrate. Fuses disconnectably connect the resistor elements to the electrode. The resistive film is made of at least one material selected from the group of NiCr, NiCrAl, NiCrSi, NiCrSiAl, TaN, TaSiO2, TiN, TiNO and TiSiON.

Abstract translation: 芯片电阻器包括基板和多个电阻元件，每个电阻元件具有设置在基板上的电阻膜和设置在与电阻膜接触的电阻膜上的互连膜。 在基板上设置电极。 保险丝将电阻元件与电极断开连接。 电阻膜由选自NiCr，NiCrAl，NiCrSi，NiCrSiAl，TaN，TaSiO 2，TiN，TiNO和TiSiON中的至少一种材料制成。

公开(公告)号：US20160211077A1

公开(公告)日：2016-07-21

申请号：US15051648

申请日：2016-02-23

Applicant: ROHM CO., LTD.

Inventor： Hiroki YAMAMOTO ,  Keishi WATANABE ,  Hiroshi TAMAGAWA

IPC: H01G4/30 ,  H01G4/228 ,  H05K1/18 ,  H01G4/005

CPC classification number: H01G4/30 ,  H01G2/06 ,  H01G4/005 ,  H01G4/228 ,  H01G4/232 ,  H01G4/40 ,  H01L22/14 ,  H01L22/20 ,  H01L23/5223 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0629 ,  H01L27/0676 ,  H01L27/101 ,  H01L27/2409 ,  H01L28/40 ,  H01L29/66189 ,  H01L29/94 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/0002 ,  H05K1/111 ,  H05K1/162 ,  H05K1/18 ,  H05K1/181 ,  H05K3/3436 ,  H05K2201/10015 ,  H05K2201/10045 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

Abstract: A chip capacitor according to the present invention includes a substrate, a pair of external electrodes formed on the substrate, a capacitor element connected between the pair of external electrodes, and a bidirectional diode connected between the pair of external electrodes and in parallel to the capacitor element. Also, a circuit assembly according to the present invention includes the chip capacitor according to the present invention and a mounting substrate having lands, soldered to the external electrodes, on a mounting surface facing a front surface of the substrate.