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公开(公告)号：US20170012173A1
公开(公告)日：2017-01-12
申请号：US15273265
申请日：2016-09-22
Applicant: Seoul Viosys Co., Ltd.
Inventor： Sum Geun LEE , Jin Cheol SHIN , Yeo Jin YOON , Kyoung Wan KIM , Jeong Hee YANG
CPC classification number: H01L33/387 , H01L27/153 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting diode includes a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer disposed under the second electrode pad. The insulation layer overlaps the first conductive type semiconductor layer and the second conductive type semiconductor layer. The insulation layer is flush with an edge of the first conductive type semiconductor layer and the second electrode pad is spaced apart from the edge of the first conductive type semiconductor layer.
Abstract translation: 发光二极管包括衬底，布置在衬底上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层 半导体层，电连接到第一导电类型半导体层的第一电极焊盘，电连接到第二导电类型半导体层的第二电极焊盘，以及设置在第二电极焊盘下方的绝缘层。 绝缘层与第一导电类型半导体层和第二导电类型半导体层重叠。 绝缘层与第一导电类型半导体层的边缘齐平，第二电极焊盘与第一导电类型半导体层的边缘间隔开。
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公开(公告)号：US20160172537A1
公开(公告)日：2016-06-16
申请号：US15003928
申请日：2016-01-22
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jae Kwon KIM , Yeo Jin YOON , Jong Kyu KIM , So Ra LEE , Sum Geun LEE , Hyun Haeng LEE
CPC classification number: H01L27/153 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/62
Abstract: A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.
Abstract translation: 发光二极管包括：基板，具有凹凸图案，凹部和凸部;布置在基板上的第一发光单元，设置在基板上的第二发光单元，将第一发光单元连接到 凹凸图案上的第二发光单元，以及设置在凹凸图案和线之间的绝缘层。 绝缘层具有与凹凸图案对应的形状。
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公开(公告)号：US20160163921A1
公开(公告)日：2016-06-09
申请号：US15013708
申请日：2016-02-02
Applicant: Seoul Viosys Co., Ltd
Inventor： Seom Geun LEE , Jong Kyu KIM , Yeo Jin YOON , Jae Kwon KIM , Mae Yi KIM
CPC classification number: H01L27/15 , H01L27/156 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other to expose a surface of the substrate, a first transparent layer disposed on and electrically connected to the first light emitting cell, first connection section disposed on a portion of the first light emitting cell, a second connection section disposed on a portion of the second light emitting cell, a first interconnection and a second interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the first and second interconnections and a side surface of the first light emitting cell.
Abstract translation: 一种发光二极管，包括第一发光单元和设置在基板上并彼此间隔开以暴露基板的表面的第二发光单元，设置在第一发光单元上并电连接到第一发光单元的第一透明层， 设置在第一发光单元的一部分上的第一连接部，设置在第二发光单元的一部分上的第二连接部，电连接第一发光单元和第二发光单元的第一互连和第二互连， 以及设置在第一和第二互连之间的绝缘层和第一发光单元的侧表面。
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公开(公告)号：US20140353692A1
公开(公告)日：2014-12-04
申请号：US14459887
申请日：2014-08-14
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Se Hee OH , Mae Yi KIM , Seom Guen LEE , Myoung Hak YANG , Yeo Jin YOON
CPC classification number: H01L33/62 , H01L27/15 , H01L27/156 , H01L33/08 , H01L33/14 , H01L33/385 , H01L33/387 , H01L33/42 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting diode includes light emitting cells disposed on a substrate and interconnections connecting the light emitting cells to each other. Each of the light emitting cells includes a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a transparent electrode layer disposed on the second semiconductor layer, wherein the first and second semiconductor layers have different conductivity types. The interconnections include a common cathode commonly connecting first and second light emitting cells of the light emitting cells, the first and second light emitting cells share the first semiconductor layer, the transparent electrode layer is continuously disposed between the first and second light emitting cells, and the common cathode is electrically connected to the first and second light emitting cells through the transparent electrode layer.
Abstract translation: 发光二极管包括设置在基板上的发光单元和将发光单元彼此连接的互连。 每个发光单元包括第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的有源层，以及设置在第二半导体层上的透明电极层，其中第一和第二半导体 层具有不同的导电类型。 互连包括通常连接发光单元的第一和第二发光单元的公共阴极，第一和第二发光单元共享第一半导体层，透明电极层连续地设置在第一和第二发光单元之间，以及 公共阴极通过透明电极层电连接到第一和第二发光单元。
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公开(公告)号：US20140159089A1
公开(公告)日：2014-06-12
申请号：US14098687
申请日：2013-12-06
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jin Woong LEE , Kyoung Wan KIM , Yeo Jin YOON , Ye Seul KIM , Tae Kyoon KIM
CPC classification number: H01L33/382 , H01L24/05 , H01L33/005 , H01L33/007 , H01L33/0075 , H01L33/20 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2224/04042 , H01L2224/05558 , H01L2224/05644 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
Abstract: Exemplary embodiments of the present invention disclose a light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.
Abstract translation: 本发明的示例性实施例公开了一种包括半导体堆叠结构的发光二极管（LED），其包括第一半导体层，有源层和第二半导体层，设置在基板上的半导体堆叠， 半导体堆叠结构，以及设置在导电衬底上并与导电衬底欧姆接触的电极，其中电极包括穿透电极和导电衬底的一部分的沟槽。
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Patent Agency Ranking
公开(公告)号：US20140117395A1
公开(公告)日：2014-05-01
申请号：US14067455
申请日：2013-10-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Wan KIM , Tae Kyoon KIM , Yeo Jin YOON , Ye Seoul KIM , Sang Hyun OH , Jin Woong LEE , In Soo KIM
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: Provided are a light emitting diode (LED) and a method of fabricating the same. The LED includes a unit chip. The unit chip includes a substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate. A concavo-convex structure having the shape of irregular vertical lines is disposed in a side surface of the unit chip.
Abstract translation: 提供一种发光二极管（LED）及其制造方法。 LED包括单元芯片。 单元芯片包括依次层叠在基板上的基板和第一导电型半导体层，有源层和第二导电型半导体层。 具有不规则垂直线形状的凹凸结构设置在单元芯片的侧表面中。
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公开(公告)号：US20220208851A1
公开(公告)日：2022-06-30
申请号：US17697410
申请日：2022-03-17
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Kyu KIM , So Ra LEE , Yeo Jin YOON , Jae Kwon KIM , Joon Sup LEE , Min Woo KANG , Se Hee OH , Hyun A. KIM , Hyoung Jin LIM
Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
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公开(公告)号：US20180145237A1
公开(公告)日：2018-05-24
申请号：US15572051
申请日：2016-04-25
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jun Yong PARK , Jae Hyun PARK , Yeo Jin YOON , In Kyu PARK
IPC: H01L33/64 , H01L25/075 , H01L33/48 , H01L33/62
CPC classification number: H01L33/647 , H01L25/0753 , H01L33/483 , H01L33/486 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/16225
Abstract: A light-emitting device is provided. The light-emitting device comprises: a first body unit including a base part and at least three conductive patterns positioned on the base part while including a plurality of element loading areas; and a plurality of light-emitting elements positioned on the plurality of element loading areas of the first body unit, wherein at least one conductive pattern among the conductive patterns is electrically connected to at least two light-emitting elements, the at least two light-emitting elements are connected to each other in series, at least two conductive patterns among the conductive patterns include pad electrode areas, an area of the plurality of conductive patterns is 80% or more of an upper surface area of the base part, and a separation distance among the plurality of conductive patterns is 200 μm to 2,400 μm.
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公开(公告)号：US20170331020A1
公开(公告)日：2017-11-16
申请号：US15663219
申请日：2017-07-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Se Hee OH , Mae Yi KIM , Seom Geun LEE , Myoung Hak YANG , Yeo Jin YOON
CPC classification number: H01L33/62 , H01L27/15 , H01L27/156 , H01L33/08 , H01L33/14 , H01L33/385 , H01L33/387 , H01L33/42 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer. The first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell. The first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell, and includes an opening to expose a lower semiconductor layer of the first light emitting cell.
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公开(公告)号：US20150311390A1
公开(公告)日：2015-10-29
申请号：US14795167
申请日：2015-07-09
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Wan KIM , Tae Kyoon KIM , Yeo Jin YOON , Ye Seul KIM , Sang Hyun OH , Jin Woong LEE , In Soo KIM
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.
Abstract translation: 一种制造发光二极管（LED）的方法包括：在衬底上依次堆叠第一导电类型半导体层，有源层和第二导电类型半导体层; 并将基板分离为单元芯片，同时在单元芯片的侧面形成具有不规则垂直线形状的凹凸结构。
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