公开(公告)号：US20080064144A1

公开(公告)日：2008-03-13

申请号：US11935597

申请日：2007-11-06

申请人： Ashay Dani ,  Saikumar Jayaraman ,  Mitesh Patel ,  Vijay Wakharkar

发明人： Ashay Dani ,  Saikumar Jayaraman ,  Mitesh Patel ,  Vijay Wakharkar

IPC分类号： H01L21/64 ,  B22F1/00 ,  B22F3/12 ,  B22F7/08

CPC分类号： H01L23/3737 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29486 ,  H01L2224/2949 ,  H01L2224/29499 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/00 ,  H01L2224/05599

摘要： A chip package includes a thermal interface material disposed between a die backside and a heat sink. The thermal interface material includes a first metal particle that is covered by a dielectric film. The dielectric film is selected from an inorganic compound of the first metal or an inorganic compound coating of a second metal. The dielectric film diminishes overall heat transfer from the first metal particle in the thermal interface material by a small fraction of total possible heat transfer without the dielectric film. A method of operating the chip includes biasing the chip with the dielectric film in place.

摘要翻译： 芯片封装包括设置在模具背面和散热器之间的热界面材料。 热界面材料包括由电介质膜覆盖的第一金属颗粒。 电介质膜选自第一金属的无机化合物或第二金属的无机化合物涂层。 电介质膜减少热界面材料中的第一金属颗粒的总传热量，而不需要电介质膜的总可能传热的一小部分。 一种操作该芯片的方法包括：将该电介质膜的芯片偏压就位。

公开(公告)号：US20070158823A1

公开(公告)日：2007-07-12

申请号：US11323512

申请日：2005-12-30

申请人： Ashay Dani ,  Anna Prakash ,  Saikumar Jayaraman ,  Mitesh Patel ,  Vijay Wakharkar

发明人： Ashay Dani ,  Anna Prakash ,  Saikumar Jayaraman ,  Mitesh Patel ,  Vijay Wakharkar

IPC分类号： H01L23/34

CPC分类号： H01L23/3737 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29486 ,  H01L2224/2949 ,  H01L2224/29499 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/00 ,  H01L2224/05599

摘要： A chip package includes a thermal interface material disposed between a die backside and a heat sink. The thermal interface material includes a first metal particle that is covered by a dielectric film. The dielectric film is selected from an inorganic compound of the first metal or an inorganic compound coating of a second metal. The dielectric film diminishes overall heat transfer from the first metal particle in the thermal interface material by a small fraction of total possible heat transfer without the dielectric film. A method of operating the chip includes biasing the chip with the dielectric film in place.

摘要翻译： 芯片封装包括设置在模具背面和散热器之间的热界面材料。 热界面材料包括由电介质膜覆盖的第一金属颗粒。 电介质膜选自第一金属的无机化合物或第二金属的无机化合物涂层。 电介质膜减少热界面材料中的第一金属颗粒的总传热量，而不需要电介质膜的总可能传热的一小部分。 一种操作该芯片的方法包括：将该电介质膜的芯片偏压就位。

公开(公告)号：US20070152325A1

公开(公告)日：2007-07-05

申请号：US11323243

申请日：2005-12-30

申请人： Ashay Dani ,  Anna Prakash ,  Saikumar Jayaraman ,  Mitesh Patel ,  Vijay Wakharkar

发明人： Ashay Dani ,  Anna Prakash ,  Saikumar Jayaraman ,  Mitesh Patel ,  Vijay Wakharkar

IPC分类号： H01L23/34 ,  H01L21/48

CPC分类号： H01L23/42 ,  H01L23/3731 ,  H01L23/3732 ,  H01L23/3737 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/00 ,  H01L2224/05599

摘要： A chip package includes a thermal interface material disposed between a die backside and a heat sink. A dielectric sheet is also disposed between the die backside and the heat sink. The dielectric sheet diminishes overall heat transfer from the die to the heat sink by a small fraction of total possible heat transfer without the dielectric sheet. A method of operating the chip includes biasing the chip with the dielectric sheet in place.

摘要翻译： 芯片封装包括设置在模具背面和散热器之间的热界面材料。 电介质片也设置在模具背面和散热器之间。 电介质薄片通过少量的总可能的热传递而减少了从模具到散热器的总传热，而没有电介质片材。 操作芯片的方法包括将电介质片偏置在适当位置。

公开(公告)号：US20050214523A1

公开(公告)日：2005-09-29

申请号：US11129516

申请日：2005-05-13

申请人： Saikumar Jayaraman ,  Paul Koning ,  Ashay Dani

发明人： Saikumar Jayaraman ,  Paul Koning ,  Ashay Dani

IPC分类号： C08K3/08 ,  C08K3/22 ,  C08K3/10

CPC分类号： H01L23/3737 ,  C08K3/08 ,  C08K3/22 ,  H01L23/4275 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/16152 ,  Y10T29/49002 ,  Y10T29/49083 ,  Y10T29/49099 ,  Y10T29/4913 ,  Y10T428/12701 ,  Y10T428/12896 ,  Y10T428/23 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/2982 ,  H01L2924/00

摘要： A thermal interface material made with a phase change polymer and a fusible filler material.

摘要翻译： 由相变聚合物和易熔填料制成的热界面材料。

公开(公告)号：US06981380B2

公开(公告)日：2006-01-03

申请号：US10326864

申请日：2002-12-20

申请人： Gregory M. Chrysler ,  Paul A. Koning ,  Saikumar Jayaraman ,  Makarem A. Hussein

发明人： Gregory M. Chrysler ,  Paul A. Koning ,  Saikumar Jayaraman ,  Makarem A. Hussein

IPC分类号： F35B21/02

CPC分类号： F25B21/02 ,  H01L23/38 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2224/0401

摘要： Apparatus and methods in accordance with the present invention utilize thermoelectric cooling (TEC) technology to provide enhanced power distribution and/or dissipation from a microelectronic die and/or microelectronic packages. Individual TEC devices are thermally interconnected with the microelectronic die in a number of placement configurations, including between the microelectronic die and the heat sink, on the integrated heat spreader (IHS) inner surface, and on the IHS outer surface. TEC devices comprise p- and n-type semiconducting material created using similar process as the microcircuits. The TEC devices are located in various regions within or on the microelectronic die, including directly below the microcircuits, on the backside of the microelectronic die, and on a separate substrate of microelectronic die material fabricated apart from the microelectronic die and subsequently thermally coupled to the backside of the microelectronic die.

摘要翻译： 根据本发明的装置和方法利用热电冷却（TEC）技术来提供来自微电子管芯和/或微电子封装的增强的功率分配和/或耗散。 单个TEC装置与集成散热器（IHS）内表面和IHS外表面上的多个放置配置（包括微电子管芯和散热器之间）与微电子管芯热互连。 TEC器件包括使用与微电路类似的工艺制造的p型和n型半导体材料。 TEC器件位于微电子管芯内或微电子管芯上的多个区域中，包括微电路正下方，微电子管芯的背面，以及与微电子管芯分开制造的微电子管芯材料的分离衬底，随后热耦合到 微电子模具的背面。

公开(公告)号：US07311967B2

公开(公告)日：2007-12-25

申请号：US10038334

申请日：2001-10-18

申请人： Ashay A. Dani ,  Paul A. Koning ,  Saikumar Jayaraman ,  Christopher L. Rumer

发明人： Ashay A. Dani ,  Paul A. Koning ,  Saikumar Jayaraman ,  Christopher L. Rumer

IPC分类号： B32B5/16 ,  B32B18/00 ,  B32B27/38 ,  B32B13/04 ,  B32B15/04

CPC分类号： H01L24/29 ,  H01L23/3737 ,  H01L23/42 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29386 ,  H01L2224/29393 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/0135 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/16152 ,  Y10S428/913 ,  Y10T428/1225 ,  Y10T428/12701 ,  Y10T428/12896 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/256 ,  Y10T428/257 ,  Y10T428/258 ,  Y10T428/2982 ,  Y10T428/31511 ,  Y10T428/31529 ,  Y10T428/31663 ,  Y10T428/31692 ,  H01L2924/00 ,  H01L2924/01022 ,  H01L2924/01034 ,  H01L2924/01083 ,  H01L2224/29099 ,  H01L2924/00014 ,  H01L2924/0503 ,  H01L2924/05032 ,  H01L2924/04642 ,  H01L2924/05432 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A thermal interface material is described for thermal coupling of an electronic component to a thermally conductive member. The thermal interface material includes a viscoelastic polymer matrix material, fusible solder particles in the matrix material, and filler particles in the matrix material. The solder particles have a melting temperature below a selected temperature (e.g. 157° C. for indium) and the filler particles have a melting temperature substantially above the selected temperature (e.g. 961° C. for silver). The filler particles keep the thermal interface material intact under adverse thermal and stress conditions.

摘要翻译： 描述了热界面材料用于将电子部件热耦合到导热部件。 热界面材料包括粘弹性聚合物基质材料，基质材料中的易熔焊料颗粒和基质材料中的填料颗粒。 焊料颗粒具有低于所选温度（例如铟的157℃）的熔融温度，并且填料颗粒具有基本上高于所选温度（例如银的961℃）的熔融温度。 填料颗粒在不利的热和应力条件下保持热界面材料完好无损。

公开(公告)号：US09349698B2

公开(公告)日：2016-05-24

申请号：US13534565

申请日：2012-06-27

申请人： Rubayat Mahmud ,  Saikumar Jayaraman ,  Sriram Muthukumar

发明人： Rubayat Mahmud ,  Saikumar Jayaraman ,  Sriram Muthukumar

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L24/05 ,  H01L23/3157 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/02126 ,  H01L2224/0384 ,  H01L2224/03845 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/13007 ,  H01L2224/13026 ,  H01L2924/00014 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2224/05552

摘要： This disclosure relates generally to a wafer having a plurality of semiconductor chips having a major surface, a metal contact positioned on one of the plurality of semiconductor chips and having a side surface and contact surface, the contact surface substantially parallel to the major surface, wherein the contact surface defines a thickness of the metal contact relative to the major surface, an underfill layer abutting the one of the plurality of semiconductor chips and the side surface of the metal contact, the underfill layer having a top surface substantially parallel to the major surface, wherein the top surface of the underfill layer defines a thickness of the underfill layer relative to the major surface, the thickness of the underfill layer being not greater than the thickness of the metal contact, and a solder bump formed in electrical contact with the contact surface of the metal contact.

摘要翻译： 本公开总体上涉及具有多个具有主表面的半导体芯片的晶片，位于多个半导体芯片之一上的金属触点，并且具有侧表面和接触表面，该接触表面基本上平行于主表面，其中 所述接触表面限定所述金属接触件相对于所述主表面的厚度，底部填充层邻接所述多个半导体芯片中的一个和所述金属接触件的侧表面，所述底部填充层具有基本上平行于所述主表面的顶表面 其中所述底部填充层的顶表面相对于所述主表面限定所述底部填充层的厚度，所述底部填充层的厚度不大于所述金属接触件的厚度，以及形成为与所述触点电接触的焊料凸块 表面的金属接触。

公开(公告)号：US07910674B2

公开(公告)日：2011-03-22

申请号：US10464978

申请日：2003-06-18

申请人： Larry Funderburk Rhodes ,  Andrew Bell ,  Ramakrishna Ravikiran ,  John C. Fondran ,  Saikumar Jayaraman ,  Brian Leslie Goodall ,  Richard A. Mimna ,  John-Henry Lipian

发明人： Larry Funderburk Rhodes ,  Andrew Bell ,  Ramakrishna Ravikiran ,  John C. Fondran ,  Saikumar Jayaraman ,  Brian Leslie Goodall ,  Richard A. Mimna ,  John-Henry Lipian

IPC分类号： C08F32/00 ,  G01R31/26 ,  H01L21/00 ,  H01L21/82 ,  H01L23/58 ,  H01L23/02 ,  H01L23/14 ,  H01L23/29

CPC分类号： C08G61/06 ,  C08F32/00 ,  C08F32/08 ,  G02B1/04 ,  C08L65/00

摘要： Methods for the addition polymerization of cycloolefins using a cationic Group 10 metal complex and a weakly coordinating anion of the formula: [(R′)zM(L′)x(L″)y]b[WCA]d wherein [(R′)zM(L′)x(L″)y] is a cation complex where M represents a Group 10 transition metal; R′ represents an anionic hydrocarbyl containing ligand; L′ represents a Group 15 neutral electron donor ligand; L″ represents a labile neutral electron donor ligand; x is 1 or 2; and y is 0, 1, 2, or 3; and z is 0 or 1, wherein the sum of x, y, and z is 4; and [WCA] represents a weakly coordinating counteranion complex; and b and d are numbers representing the number of times the cation complex and weakly coordinating counteranion complex are taken to balance the electronic charge on the overall catalyst complex.

摘要翻译： 使用阳离子第10族金属络合物和式（[（R'）z M（L'）x（L“）y] b [WCA] d的弱配位阴离子进行环烯加成聚合的方法，其中[（R' ）zM（L'）x（L“）y]是阳离子络合物，其中M表示第10族过渡金属; R'表示含阴离子烃基的配体; L'表示15族中性电子给体配体; L“表示不稳定的中性电子给体配体; x为1或2; y为0,1,2或3; 且z为0或1，其中x，y和z之和为4; 和[WCA]代表弱协调的对抗综合体; b和d是表示阳离子络合物和弱配位抗衡阴离子络合物在总体催化剂络合物上平衡电荷的次数的数字。

公开(公告)号：US07521115B2

公开(公告)日：2009-04-21

申请号：US10321060

申请日：2002-12-17

申请人： Terry Lee Sterrett ,  Tian An Chen ,  Saikumar Jayaraman

发明人： Terry Lee Sterrett ,  Tian An Chen ,  Saikumar Jayaraman

IPC分类号： B32B9/00

CPC分类号： C08L101/12 ,  B29C39/026 ,  B29C70/58 ,  B29C70/882 ,  B29L2031/3406 ,  C08J5/10 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/30107 ,  H05K3/321 ,  H05K2201/0367 ,  H05K2201/10674 ,  H05K2201/10719 ,  Y10T428/24917 ,  Y10T428/25 ,  Y10T428/31681 ,  H01L2924/00 ,  H01L2224/0401

摘要： A method for low temperature bumping is disclosed. A resin capable of being cross-linked by free-radical or cationic polymerization at low temperature is provided. Electrically conductive particles are then added to the resin to form a mixture. The mixture is then activated by heat or exposure to light to polymerize the mixture. In an alternative embodiment, a vinyl ether resin is used, to which electrically conductive particles are added. The mixture is polymerized by exposure to light.

摘要翻译： 公开了一种低温碰撞的方法。 提供能够在低温下通过自由基或阳离子聚合交联的树脂。 然后将导电颗粒加入到树脂中以形成混合物。 然后通过加热或暴露于光使混合物活化，以使混合物聚合。 在替代实施方案中，使用乙烯基醚树脂，其中加入导电颗粒。 混合物通过曝光聚合。

公开(公告)号：US07387841B2

公开(公告)日：2008-06-17

申请号：US11013626

申请日：2004-12-15

申请人： Saikumar Jayaraman

发明人： Saikumar Jayaraman

IPC分类号： B32B9/04

CPC分类号： C09D183/04 ,  C08K3/32 ,  C08K5/5419 ,  Y10T428/31663

摘要： The present invention describes a method including: providing a material A, the material A including a siloxane backbone with a hydride functional group; reacting the material A with a material B in the presence of a catalyst to form a material C, the material B including an alkenyl functional group and an aromatic carbonate functional group; heating the material C to form a material D, the material D including a phenol functional group; and reacting the material D with a material E and a material F to form a material G, the material E including a cyanogen halide, the material F including an acid acceptor, the material G including an aromatic cyanate ester functional group. The present invention further describes a die attach adhesive including a three-dimensional network of substituted triazine rings.

摘要翻译： 本发明描述了一种方法，包括：提供材料A，包含具有氢化物官能团的硅氧烷主链的材料A; 在催化剂存在下使材料A与材料B反应形成材料C，材料B包括链烯基官能团和芳族碳酸酯官能团; 加热材料C以形成材料D，材料D包括酚官能团; 并使材料D与材料E和材料F反应以形成材料G，所述材料E包括卤化氰，包括酸受体的材料F，所述材料G包括芳族氰酸酯官能团。 本发明进一步描述了包含取代的三嗪环的三维网络的管芯附着粘合剂。