公开(公告)号：US20230187270A1

公开(公告)日：2023-06-15

申请号：US18168363

申请日：2023-02-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Te-Chih HSIUNG ,  Jyun-De WU ,  Peng WANG ,  Huan-Just LIN

IPC分类号： H01L21/768 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L23/535 ,  H01L21/311

CPC分类号： H01L21/76805 ,  H01L29/7851 ,  H01L21/76895 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/0673 ,  H01L23/535 ,  H01L21/31116 ,  H01L21/76825 ,  H01L21/76828

摘要： The present disclosure includes an ion implantation step that creates doped regions in gate dielectric caps. The doped regions have a different material composition and hence a different etch selectivity than un-doped regions in the gate dielectric caps. The doped regions thus allow for slowing down a subsequent etching process of forming gate contact openings.

公开(公告)号：US11670504B2

公开(公告)日：2023-06-06

申请号：US16419426

申请日：2019-05-22

申请人： Intel Corporation

发明人： Jeremy D. Ecton ,  Brandon C. Marin ,  Andrew J. Brown ,  Dilan Seneviratne

IPC分类号： H01L21/02 ,  H01L23/532 ,  H01L21/768 ,  H01L49/02

CPC分类号： H01L21/02345 ,  H01L21/02118 ,  H01L21/02167 ,  H01L21/02194 ,  H01L21/76825 ,  H01L21/76841 ,  H01L23/5329 ,  H01L23/53228 ,  H01L28/60

摘要： A thin-film insulator comprises a first electrode over a substrate. A photo up-converting material is over the first electrode. A cured photo-imageable dielectric (PID) containing a high-k filler material is over the photo up-converting material, wherein the cured PID is less than 4 μm in thickness, and a second electrode is over the cured PID.

公开(公告)号：US20190189461A1

公开(公告)日：2019-06-20

申请号：US16329251

申请日：2017-09-20

申请人： SCREEN Holdings Co., Ltd.

发明人： Ayumi HIGUCHI ,  Akihisa IWASAKI

IPC分类号： H01L21/3105 ,  H01L21/02

CPC分类号： H01L21/3105 ,  H01L21/0206 ,  H01L21/304 ,  H01L21/306 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/768 ,  H01L21/76825 ,  H01L21/76826

摘要： A substrate in which a low dielectric constant film is formed on a front surface thereof is processed. A densification step of densifying a surface layer portion of the low dielectric constant film to change to a densified layer is executed. Then, after a densified layer forming step, a repair liquid supplying step of supplying a repair liquid, for repairing the densified layer, to a front surface of the low dielectric constant film is executed.

公开(公告)号：US20180366408A1

公开(公告)日：2018-12-20

申请号：US16049442

申请日：2018-07-30

申请人： International Business Machines Corporation

发明人： Benjamin David BRIGGS ,  Lawrence A. CLEVENGER ,  Bartlef H. DEPROSPO ,  Huai HUANG ,  Christopher J. PENNY ,  Michael RIZZOLO

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L23/5226 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53219 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/5329 ,  H01L2221/1047

摘要： A method of forming a semiconductor device includes forming a porous dielectric layer including a recessed portion, forming a conductive layer in the recessed portion of the porous dielectric layer, and forming a conformal cap layer on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the conformal cap layer.

公开(公告)号：US20180233404A1

公开(公告)日：2018-08-16

申请号：US15430039

申请日：2017-02-10

申请人： GLOBALFOUNDRIES INC.

发明人： Jiehui SHU ,  Byoung Youp KIM ,  Jinping LIU

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L21/76825 ,  H01L21/76802 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5329

摘要： The present disclosure relates to semiconductor structures and, more particularly, to variable space mandrel cut for self-aligned double patterning and methods of manufacture. The method includes: forming a plurality of mandrels on a substrate; forming spacers about the plurality of mandrels and exposed portions of the substrate; removing a portion of at least one of the plurality of mandrels to form an opening; and filling in the opening with material.

公开(公告)号：US20180218943A1

公开(公告)日：2018-08-02

申请号：US15904020

申请日：2018-02-23

申请人： Applied Materials, Inc.

发明人： Kurtis Leschkies ,  Steven Verhaverbeke

IPC分类号： H01L21/768 ,  H01L21/67 ,  C23C16/56 ,  C23C16/52 ,  C23C16/02 ,  C23C16/48 ,  C23C16/455 ,  C23C16/04 ,  C23C16/50

CPC分类号： H01L21/76879 ,  C23C16/02 ,  C23C16/045 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/482 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/0228 ,  H01L21/02299 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/67075 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76883

摘要： A method of device processing. The method may include providing a cavity in a layer, directing energetic flux to a bottom surface of the cavity, performing an exposure of the cavity to a moisture-containing ambient, and introducing a fill material in the cavity using an atomic layer deposition (ALD) process, wherein the fill material is selectively deposited on the bottom surface of the cavity with respect to a sidewall of the cavity.

公开(公告)号：US10002788B2

公开(公告)日：2018-06-19

申请号：US15145924

申请日：2016-05-04

申请人： Samsung Electronics Co., Ltd.

发明人： Kyungin Choi ,  Jaeran Jang ,  Yoonhae Kim

IPC分类号： H01L21/336 ,  H01L21/768 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/11 ,  H01L21/3115 ,  H01L29/165

CPC分类号： H01L21/76825 ,  H01L21/31155 ,  H01L21/76805 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L21/823878 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848

摘要： Methods of fabricating a semiconductor device include forming a gate pattern on a substrate, forming spacers to cover both sidewalls of the gate pattern, forming an interlayer insulating layer to cover the gate pattern and the spacers, and forming contact holes to penetrate the interlayer insulating layer and expose sidewalls of the spacers. The forming of the spacers includes forming a spacer layer to cover the gate pattern and injecting silicon ions into the spacer layer. The spacer layer is a nitride-based low-k insulating layer, whose dielectric constant is lower than that of silicon oxide.

公开(公告)号：US20180158726A1

公开(公告)日：2018-06-07

申请号：US15888130

申请日：2018-02-05

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsiang-Wei Lin

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/311 ,  H01L21/764 ,  H01L21/67

CPC分类号： H01L21/76825 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/67063 ,  H01L21/67115 ,  H01L21/764 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76843 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295

摘要： A semiconductor structure includes a first dielectric layer disposed over a substrate; a first metal feature and a second metal feature embedded in the first dielectric layer and spaced from each other; an etch stop layer disposed between the first and second metal features and on sidewalls of the first dielectric layer; a second dielectric layer disposed over the etch stop layer and between the first and second metal features; and an air gap surrounded by the second dielectric layer and disposed between the first and second metal features.

公开(公告)号：US20180158725A1

公开(公告)日：2018-06-07

申请号：US15426226

申请日：2017-02-07

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Shao-Kuan Lee ,  Hsin-Yen Huang ,  Hai-Ching Chen

IPC分类号： H01L21/768 ,  H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  B08B13/00 ,  B08B7/00 ,  B08B3/10

CPC分类号： H01L21/76825 ,  B08B7/0057 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32853 ,  H01J2237/334 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/67028 ,  H01L21/67115 ,  H01L21/76814 ,  H01L21/76826

摘要： A method for fabrication a semiconductor device and a system utilizing the same are provided. In the method for fabrication the semiconductor device, at first, a semiconductor structure having a metal conducting structure is provided. Next, a dielectric layer is deposited over the metal conducting structure. Then, an etching process is performed on the dielectric layer by using a fluorine-containing gas so as to form an opening, in which fluorine-containing compounds are formed on a surface of the opening during the etching process. And then, a pre-cleaning process is performed by using UV radiation so as to remove the fluorine-containing compounds. After the pre-cleaning process is performed, a cleaning process is performed to clean the surface of the opening.

公开(公告)号：US09887128B2

公开(公告)日：2018-02-06

申请号：US15276456

申请日：2016-09-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsiang-Wei Lin

IPC分类号： H01L21/768 ,  H01L23/528 ,  H01L21/311 ,  H01L23/532 ,  H01L21/67 ,  H01L21/764

CPC分类号： H01L21/76825 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/67063 ,  H01L21/67115 ,  H01L21/764 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76843 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295

摘要： The present disclosure provides a method of fabricating a semiconductor structure in accordance with some embodiments. The method includes forming a first low-k dielectric layer over a substrate; forming a first and second metal features in the first low-k dielectric layer; forming a first trench in the first low-k dielectric layer, the first trench spanning between the first and second metal features; performing a ultraviolet (UV) treatment to sidewalls of the first low-k dielectric layer in the first trench; forming a first etch stop layer in the first trench; and depositing a second low-k dielectric layer on the first etch stop layer, thereby forming an air gap in the first trench.