公开(公告)号：US20150044871A1

公开(公告)日：2015-02-12

申请号：US14308420

申请日：2014-06-18

Applicant: TEL NEXX, Inc. ,  TEL Epion Inc.

Inventor： Georgiy Seryogin ,  Thomas G. Tetreault ,  Stephen N. Golovato ,  Ramya Chandrasekaran

IPC: H01L21/3205

CPC classification number: H01L23/552 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/20 ,  C23C14/35 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/3405 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/31058 ,  H01L21/32051 ,  H01L21/67207 ,  H01L23/293 ,  H01L23/296 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques disclosed herein a method and system for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties.

Abstract translation: 本文公开的技术方法和系统，用于调节基底上的聚合物层以使得金属层能够粘附到聚合物层。 技术可以包括用含氮等离子体调节聚合物层，以在聚合物层的表面上产生氮化物层。 在另一个实施例中，调节可以包括在富氮环境中使用较低功率铜溅射工艺沉积CuN层。 在条件处理之后，可以使用更高功率的铜沉积或溅射工艺将铜沉积到具有良好粘合性能的聚合物层上。

公开(公告)号：US08691103B2

公开(公告)日：2014-04-08

申请号：US13678972

申请日：2012-11-16

Applicant: TEL Epion Inc.

Inventor： John J. Hautala

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: B44C1/227 ,  H01J2237/0812 ,  H01L21/02019

Abstract: A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.

Abstract translation: 描述了一种处理工件的方法。 该方法包括从与工件表面轮廓有关的计量数据中计算校正数据，使用气体簇离子束（GCIB）根据校正数据调整表面轮廓，并且通过执行GCIB之后的蚀刻工艺来进一步调节表面轮廓 调整。

公开(公告)号：US20130230984A1

公开(公告)日：2013-09-05

申请号：US13888981

申请日：2013-05-07

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  John J. Hautala ,  John Gumpher

IPC: H01L21/285

CPC classification number: H01L21/28506 ,  C23C14/02 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5833 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3165 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/3205

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

Abstract translation: 对半导体装置的制造方法进行说明。 该方法包括在形成硅化物区域期间对含硅衬底的至少一部分进行气体簇离子束（GCIB）的预处理和/或后处理。

公开(公告)号：US20130224950A1

公开(公告)日：2013-08-29

申请号：US13888924

申请日：2013-05-07

Applicant: TEL EPION INC.

Inventor： Noel Russell ,  John J. Hautala ,  John Gumpher

IPC: H01L21/3205

CPC classification number: H01L21/28506 ,  C23C14/02 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5833 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3165 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/3205

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

公开(公告)号：US09875947B2

公开(公告)日：2018-01-23

申请号：US15142147

申请日：2016-04-29

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  Soo Doo Chae ,  Vincent Gizzo ,  Joshua LaRose ,  Nicholas Joy

IPC: H01L21/66 ,  H01L21/311 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/3213

CPC classification number: H01L22/20 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32135 ,  H01L22/12

Abstract: A method for correcting a surface profile on a substrate is described. In particular, the method includes receiving a substrate having a heterogeneous layer composed of a first material and a second material, wherein the heterogeneous layer has an initial upper surface exposing the first material and the second material, and defining a first surface profile across the substrate. The method further includes setting a target surface profile for the heterogeneous layer, selectively removing at least a portion of the first material using a gas cluster ion beam (GCIB) etching process, and recessing the first material beneath the second material, and thereafter, selectively removing at least a portion of the second material to achieve a final upper surface exposing the first material and the second material, and defining a second surface profile, wherein the second surface profile is within a pre-determined tolerance of the target surface profile.

公开(公告)号：US09540725B2

公开(公告)日：2017-01-10

申请号：US14696063

申请日：2015-04-24

Applicant: TEL Epion Inc.

Inventor： Kenneth Regan ,  Yan Shao ,  Robert K. Becker ,  Christopher K. Olsen

IPC: H01L21/425 ,  C23C14/22 ,  H01L21/265 ,  H01L21/263 ,  H01L21/02 ,  H01L21/285 ,  H01J37/08 ,  H01J37/147 ,  H01J37/317 ,  C23C14/10

CPC classification number: C23C14/221 ,  C23C14/10 ,  H01J37/08 ,  H01J37/1477 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/0812 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/2633 ,  H01L21/26566 ,  H01L21/28556

Abstract: Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle φ, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.

Abstract translation: 提供了一种控制用于处理衬底上的结构的气体簇离子束（GCIB）系统的方法。 GCIB系统包括用于将GCIB引向衬底的偏转板，GCIB系统耦合到被配置成在三维中移动衬底的衬底扫描装置。 当衬底被衬底扫描装置移动时，衬底暴露于GCIB。 控制器用于控制一组偏转操作参数，包括偏转角φ，偏转板的电压差，偏转板功率的频率，光束电流，衬底距离，喷嘴中的压力，处理室中的气体流速 ，光束灼伤分离，豆烧的持续时间和/或光束偏转器输出的占空比。

公开(公告)号：US09502209B2

公开(公告)日：2016-11-22

申请号：US14822172

申请日：2015-08-10

Applicant: TEL Epion Inc.

Inventor： Hongyu H. Yue ,  Noel Russell ,  Vincent Gizzo ,  Joshua LaRose ,  Steven P. Caliendo

IPC: G21K5/04 ,  H01J37/20 ,  H01J37/317 ,  H01J37/305

CPC classification number: H01J37/20 ,  H01J37/305 ,  H01J37/3056 ,  H01J37/3171 ,  H01J2237/0812 ,  H01J2237/202 ,  H01J2237/30483

Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

公开(公告)号：US09355864B2

公开(公告)日：2016-05-31

申请号：US14308420

申请日：2014-06-18

Applicant: TEL NEXX, Inc. ,  TEL Epion Inc.

Inventor： Georgiy Seryogin ,  Thomas G. Tetreault ,  Stephen N. Golovato ,  Ramya Chandrasekaran

IPC: H01L21/44 ,  H01L21/3205 ,  H01L23/532 ,  H01L21/285 ,  H01L23/552

CPC classification number: H01L23/552 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/20 ,  C23C14/35 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/3405 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/31058 ,  H01L21/32051 ,  H01L21/67207 ,  H01L23/293 ,  H01L23/296 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques disclosed herein a method and system for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties.

Abstract translation: 本文公开的技术方法和系统，用于调节基底上的聚合物层以使得金属层能够粘附到聚合物层。 技术可以包括用含氮等离子体调节聚合物层，以在聚合物层的表面上产生氮化物层。 在另一个实施例中，调节可以包括在富氮环境中使用较低功率铜溅射工艺沉积CuN层。 在条件处理之后，可以使用更高功率的铜沉积或溅射工艺将铜沉积到具有良好粘合性能的聚合物层上。

公开(公告)号：US09324567B2

公开(公告)日：2016-04-26

申请号：US13826600

申请日：2013-03-14

Applicant: TEL Epion Inc.

Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Ruairidh MacCrimmon ,  Luis Fernandez

IPC: H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  C23F4/00 ,  H01L21/3065

CPC classification number: H01L21/306 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.

Abstract translation: 描述了用于执行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB蚀刻处理利用含Si和/或Ge的蚀刻剂。 此外，GCIB蚀刻处理有助于蚀刻含Si材料，含Ge材料和含金属材料。

公开(公告)号：US09305746B2

公开(公告)日：2016-04-05

申请号：US14151151

申请日：2014-01-09

Applicant: TEL Epion Inc.

Inventor： Robert K. Becker ,  Avrum Freytsis

IPC: H01J37/30 ,  H01J37/08

CPC classification number: H01J37/3002 ,  G21K2201/00 ,  H01J37/08 ,  H01J37/30 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0812 ,  Y10T29/49769 ,  Y10T29/49826

Abstract: A method of assembling a nozzle/skimmer module includes coupling a nozzle assembly and skimmer cartridge assembly in a rigid tandem configuration to more accurately control the formation of the Gas Cluster Ion Beam (GCIB). The nozzle/skimmer module is pre-aligned before installation in a production GCIB processing system to more accurately position the GCIB.

Abstract translation: 组装喷嘴/撇渣器模块的方法包括以刚性串联构造联接喷嘴组件和撇渣器组件以更准确地控制气体簇离子束（GCIB）的形成。 喷嘴/撇渣器模块在安装到生产GCIB处理系统之前进行预对准，以更准确地定位GCIB。