公开(公告)号：US08735276B2

公开(公告)日：2014-05-27

申请号：US13365378

申请日：2012-02-03

申请人： Hyun-Soo Chung ,  Jae-Shin Cho ,  Dong-Ho Lee ,  Dong-Hyeon Jang ,  Seong-Deok Hwang ,  Seung-Duk Baek

发明人： Hyun-Soo Chung ,  Jae-Shin Cho ,  Dong-Ho Lee ,  Dong-Hyeon Jang ,  Seong-Deok Hwang ,  Seung-Duk Baek

IPC分类号： H01L21/768

CPC分类号： H01L24/91 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48463 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00

摘要： Provided are semiconductor packages and methods of manufacturing the semiconductor package. The semiconductor packages may include a substrate including a chip pad, a redistributed line which is electrically connected to the chip pad and includes an opening. The semiconductor packages may also include an external terminal connection portion, and an external terminal connection pad which is disposed at an opening and electrically connected to the redistributed line. The present general inventive concept can solve the problem where an ingredient of gold included in a redistributed line may be prevented from being diffused into an adjacent bump pad to form a void or an undesired intermetallic compound. In a chip on chip structure, a plurality of bumps of a lower chip are connected to an upper chip to improve reliability, diversity and functionality of the chip on chip structure.

摘要翻译： 提供半导体封装和制造半导体封装的方法。 半导体封装可以包括衬底，其包括芯片焊盘，电连接到芯片焊盘并且包括开口的再分布线。 半导体封装还可以包括外部端子连接部分和设置在开口处并电连接到重新分配线路的外部端子连接焊盘。 本发明的总体构思可以解决包含在再分布线中的金的成分被阻止扩散到相邻的凸块焊盘中以形成空隙或不期望的金属间化合物的问题。 在片上芯片结构中，下部芯片的多个凸起连接到上部芯片以提高片上芯片结构的可靠性，分集性和功能性。

公开(公告)号：US20100078819A1

公开(公告)日：2010-04-01

申请号：US12568086

申请日：2009-09-28

申请人： Chang-Woo SHIN ,  Hyun-Soo Chung ,  Eun-Chul Ahn ,  Jum-Gon Kim ,  Jin-Ho Chun

发明人： Chang-Woo SHIN ,  Hyun-Soo Chung ,  Eun-Chul Ahn ,  Jum-Gon Kim ,  Jin-Ho Chun

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L21/76841 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/02 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/12044

摘要： A semiconductor device including an interconnection structure including a copper pad, a pad barrier layer and a metal redistribution layer, an interconnection structure thereof and methods of fabricating the same are provided. The semiconductor device includes a copper pad disposed on a first layer, a pad barrier layer including titanium disposed on the copper pad, an inorganic insulating layer disposed on the pad barrier layer, a buffer layer disposed on the inorganic insulating layer, wherein the inorganic insulating layer and the buffer layer expose a portion of the pad barrier layer, a seed metal layer disposed on the exposed buffer layer, a metal redistribution layer disposed on the seed metal layer, and a first protective layer disposed on the metal redistribution layer.

摘要翻译： 提供一种包括铜焊盘，焊盘阻挡层和金属再分布层的互连结构的半导体器件，其互连结构及其制造方法。 半导体器件包括设置在第一层上的铜焊盘，包括设置在铜焊盘上的钛的焊盘阻挡层，设置在焊盘阻挡层上的无机绝缘层，设置在无机绝缘层上的缓冲层，其中无机绝缘 所述缓冲层暴露所述焊盘阻挡层的一部分，设置在所述暴露的缓冲层上的种子金属层，设置在所述种子金属层上的金属再分配层以及设置在所述金属再分配层上的第一保护层。

公开(公告)号：US20100032807A1

公开(公告)日：2010-02-11

申请号：US12588231

申请日：2009-10-08

申请人： Hyun-Soo Chung ,  Seung-Duk Baek ,  Dong-Ho Lee ,  Dong-Hyeon Jang ,  Seong-Deok Hwang

发明人： Hyun-Soo Chung ,  Seung-Duk Baek ,  Dong-Ho Lee ,  Dong-Hyeon Jang ,  Seong-Deok Hwang

IPC分类号： H01L23/544

CPC分类号： H01L23/3114 ,  H01L24/10 ,  H01L24/13 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05647 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/274 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014

摘要： A wafer level semiconductor module may include a module board and an IC chip set mounted on the module board. The IC chip set may include a plurality of IC chips having scribe lines areas between the adjacent IC chips. Each IC chip may have a semiconductor substrate having an active surface with a plurality of chip pads and a back surface. A passivation layer may be provided on the active surface of the semiconductor substrate of each IC chip and may having openings through which the chip pads may be exposed. Sealing portions may be formed in scribe line areas.

摘要翻译： 晶片级半导体模块可以包括安装在模块板上的模块板和IC芯片组。 IC芯片组可以包括在相邻IC芯片之间具有划线区域的多个IC芯片。 每个IC芯片可以具有具有多个芯片焊盘和后表面的有源表面的半导体衬底。 可以在每个IC芯片的半导体衬底的有源表面上提供钝化层，并且可以具有可以暴露芯片焊盘的开口。 密封部分可以形成在划线区域中。

公开(公告)号：US07626260B2

公开(公告)日：2009-12-01

申请号：US11751464

申请日：2007-05-21

申请人： Hyun-Soo Chung ,  Cha-Jea Jo ,  Dong-Ho Lee ,  Seong-Deok Hwang

发明人： Hyun-Soo Chung ,  Cha-Jea Jo ,  Dong-Ho Lee ,  Seong-Deok Hwang

IPC分类号： H01L23/34

CPC分类号： H01L23/473 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2924/00

摘要： Provided is a semiconductor device having a cooling path on its bottom surface. The stack-type semiconductor device having a cooling path comprises a stack-type semiconductor chip comprising a first semiconductor chip and a second semiconductor chip. The first semiconductor chip comprises a first surface in which a circuit unit is formed and a second surface in which a first cooling path is formed, and the second semiconductor chip comprises a first surface in which a circuit unit is formed and a second surface in which a second cooling path is formed. The second surface of the first semiconductor chip and the second surface of the second semiconductor chip are bonded to each other, and a third cooling path is formed in the middle of the stack-type semiconductor chip using the first and second cooling paths. Warpage of the stack-type semiconductor device is suppressed and heat is easily dissipated.

摘要翻译： 提供了在其底面上具有冷却路径的半导体器件。 具有冷却路径的叠层型半导体器件包括：堆叠型半导体芯片，包括第一半导体芯片和第二半导体芯片。 第一半导体芯片包括其中形成有电路单元的第一表面和形成有第一冷却路径的第二表面，并且第二半导体芯片包括其中形成电路单元的第一表面和第二表面，其中第二表面 形成第二冷却路径。 第一半导体芯片的第二表面和第二半导体芯片的第二表面彼此接合，并且使用第一和第二冷却路径在堆叠型半导体芯片的中间形成第三冷却路径。 堆叠型半导体器件的翘曲被抑制，并且易于散热。

公开(公告)号：US08431479B2

公开(公告)日：2013-04-30

申请号：US12797837

申请日：2010-06-10

申请人： Ki-Hyuk Kim ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

发明人： Ki-Hyuk Kim ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

IPC分类号： H01L21/4763

CPC分类号： H01L21/76813 ,  H01L21/561 ,  H01L21/76879 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02317 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Semiconductor devices and methods of forming the same, including forming a chip pad on a chip substrate, forming a passivation layer on the chip pad and the chip substrate, forming a first insulation layer on the passivation layer, forming a recess and a first opening in the first insulation layer, forming a second opening in the passivation layer to correspond to the first opening, forming a redistribution line in a redistribution line area of the recess, the first opening, and the second opening, forming a second insulation layer on the redistribution line and the first insulation layer, and forming an opening in the second insulation to expose a portion of the redistribution line as a redistribution pad.

摘要翻译： 半导体器件及其形成方法，包括在芯片衬底上形成芯片焊盘，在芯片焊盘和芯片衬底上形成钝化层，在钝化层上形成第一绝缘层，形成凹槽和第一开口 所述第一绝缘层在所述钝化层中形成对应于所述第一开口的第二开口，在所述凹部，所述第一开口和所述第二开口的再分布线区域中形成再分配线，在所述再分布上形成第二绝缘层 线和第一绝缘层，并且在第二绝缘体中形成开口以将再分配线的一部分暴露为再分布焊盘。

公开(公告)号：US08111520B2

公开(公告)日：2012-02-07

申请号：US12344817

申请日：2008-12-29

申请人： Hyun-Soo Chung ,  Dong-Ho Lee ,  Dong-Han Kim ,  Seong-Deok Hwang ,  Ki-Hyuk Kim

发明人： Hyun-Soo Chung ,  Dong-Ho Lee ,  Dong-Han Kim ,  Seong-Deok Hwang ,  Ki-Hyuk Kim

IPC分类号： H05K1/18

CPC分类号： H05K1/185 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H05K3/3457 ,  H05K3/4694 ,  H05K2201/10719

摘要： A semiconductor module can include a printed circuit board (PCB) and a semiconductor package inserted into an inner space of the PCB. The semiconductor package may be electrically connected to the PCB. The PCB may thus surround the semiconductor package so that cracks may not be generated in the outer terminals.

摘要翻译： 半导体模块可以包括插入到PCB的内部空间中的印刷电路板（PCB）和半导体封装。 半导体封装可以电连接到PCB。 因此，PCB可以围绕半导体封装，从而可能不会在外部端子中产生裂纹。

公开(公告)号：US07598607B2

公开(公告)日：2009-10-06

申请号：US12123367

申请日：2008-05-19

申请人： Hyun-Soo Chung ,  Dong-Hyeon Jang ,  Nam-Seog Kim ,  Sun-Won Kang

发明人： Hyun-Soo Chung ,  Dong-Hyeon Jang ,  Nam-Seog Kim ,  Sun-Won Kang

IPC分类号： H01L23/02

CPC分类号： H01L23/3128 ,  H01L23/5389 ,  H01L24/24 ,  H01L25/105 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/92244 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00

摘要： Provided is a semiconductor package with enhanced joint reliability and methods of fabricating the same. The method includes: forming package units including a semiconductor chip interposed between a bottom layer and a top layer; and sequentially stacking the package units on a substrate. The bottom layer and the top layer are formed of a material having a lower modulus than the semiconductor chip. The semiconductor package includes: at least one package unit disposed on a substrate, the package unit including a semiconductor chip having a pad, a bottom layer and a top layer substantially surrounding the semiconductor chip, and a redistribution structure overlying the top layer. The redistribution structure is electrically connected to the pad.

摘要翻译： 提供了具有增强的接头可靠性的半导体封装以及其制造方法。 该方法包括：形成包括插入在底层和顶层之间的半导体芯片的封装单元; 并且将所述封装单元依次堆叠在基板上。 底层和顶层由具有比半导体芯片低的模量的材料形成。 所述半导体封装包括：设置在基板上的至少一个封装单元，所述封装单元包括具有衬垫，底层和基本上围绕所述半导体芯片的顶层的半导体芯片以及覆盖所述顶层的再分布结构。 再分配结构电连接到焊盘。

公开(公告)号：US20090109642A1

公开(公告)日：2009-04-30

申请号：US12249047

申请日：2008-10-10

申请人： Hyun-Soo Chung ,  Dong-Ho Lee ,  Seong-Deok Hwang ,  Sun-Won Kang ,  Ki-Hyuk Kim

发明人： Hyun-Soo Chung ,  Dong-Ho Lee ,  Seong-Deok Hwang ,  Sun-Won Kang ,  Ki-Hyuk Kim

IPC分类号： H05K7/00

CPC分类号： H05K1/0271 ,  H01L23/498 ,  H01L25/0652 ,  H01L2224/16 ,  H01L2924/12044 ,  H05K1/181 ,  H05K2201/0133 ,  H05K2201/10674 ,  H05K2203/1572

摘要： Semiconductor devices and electronic devices using the same. The semiconductor module may include a first semiconductor chip, and a module substrate having a top surface on which the first semiconductor chip is mounted and a second surface opposite the top surface, wherein the module substrate includes a first buffer layer to relieve stress occurring due to a difference of thermal expansions between the first semiconductor chip and the module substrate.

摘要翻译： 半导体器件和使用其的电子器件。 半导体模块可以包括第一半导体芯片和具有安装有第一半导体芯片的顶表面的模块衬底和与顶表面相对的第二表面，其中模块衬底包括第一缓冲层，以缓解由于 第一半导体芯片和模块基板之间的热膨胀差异。

公开(公告)号：US07312143B2

公开(公告)日：2007-12-25

申请号：US11717691

申请日：2007-03-14

申请人： Myeong-Soon Park ,  Hyun-Soo Chung ,  In-Young Lee ,  Jae-Sik Chung ,  Sung-Min Sim ,  Dong-Hyeon Jang ,  Young-Hee Song ,  Seung-Kwan Ryu

发明人： Myeong-Soon Park ,  Hyun-Soo Chung ,  In-Young Lee ,  Jae-Sik Chung ,  Sung-Min Sim ,  Dong-Hyeon Jang ,  Young-Hee Song ,  Seung-Kwan Ryu

IPC分类号： H01L23/48

CPC分类号： H01L23/3114 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02165 ,  H01L2224/02335 ,  H01L2224/02351 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/05569 ,  H01L2224/10125 ,  H01L2224/13006 ,  H01L2224/13011 ,  H01L2224/13018 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05599

摘要： A wafer level chip scale package may have a gap provided between a solder bump and a bump land. The gap may be filled with a gas. A method of manufacturing a wafer level chip scale package may involve forming a redistribution line having a first opening, forming a seed metal layer having a second opening including an undercut portion, and forming the gap using the first and the second openings.

摘要翻译： 晶片级芯片级封装可以具有设置在焊料凸块和凸起焊盘之间的间隙。 间隙可以填充气体。 制造晶片级芯片级封装的方法可以包括形成具有第一开口的再分配线，形成具有包括底切部分的第二开口的种子金属层，以及使用第一和第二开口形成间隙。

公开(公告)号：US20070170556A1

公开(公告)日：2007-07-26

申请号：US11635011

申请日：2006-12-07

申请人： Hyun-Soo Chung ,  Dong-Hyeon Jang ,  In-Young Lee ,  Dong-Ho Lee

发明人： Hyun-Soo Chung ,  Dong-Hyeon Jang ,  In-Young Lee ,  Dong-Ho Lee

IPC分类号： H01L23/495

CPC分类号： H01L24/10 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H05K1/111 ,  H05K3/062 ,  H05K3/3452 ,  H05K3/3457 ,  H05K2201/09745 ,  H05K2203/1184 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A semiconductor device may include a semiconductor element. A layer of material may be provided on the semiconductor element which may have an opening through which a bond pad may be exposed. At least one flange structure may be provided on the first bond pad, the at least one flange structure made of at least two metal layers with different etch rates.

摘要翻译： 半导体器件可以包括半导体元件。 可以在半导体元件上提供一层材料，该层可以具有可以暴露接合焊盘的开口。 可以在第一接合焊盘上提供至少一个凸缘结构，所述至少一个凸缘结构由具有不同蚀刻速率的至少两个金属层制成。