公开(公告)号：US07581314B2

公开(公告)日：2009-09-01

申请号：US11358823

申请日：2006-02-21

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

IPC分类号： H01K3/10

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US20070259516A1

公开(公告)日：2007-11-08

申请号：US11429708

申请日：2006-05-08

申请人： Christopher Jahnes ,  Satyanarayana Nitta ,  Kevin Petrarca ,  Katherine Saenger

发明人： Christopher Jahnes ,  Satyanarayana Nitta ,  Kevin Petrarca ,  Katherine Saenger

IPC分类号： H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2221/1026 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multilevel air-gap-containing interconnect structure and a method of fabricating the same are provided. The multilevel air-gap-containing interconnect structure includes a collection of interspersed line levels and via levels, with via levels comprising conductive vias embedded in one or more dielectric layers in which the dielectric layers are solid underneath and above line features in adjacent levels, and perforated between line features. The line levels contain conductive lines and an air-gap-containing dielectric. A solid dielectric bridge layer, containing conductive contacts and formed by filling in a perforated dielectric layer, is disposed over the collection of interspersed line and via levels.

摘要翻译： 提供了一种具有多级气隙的互连结构及其制造方法。 多层含气隙的互连结构包括散布的线电平和通孔电平的集合，其中通孔层包括嵌入在一个或多个电介质层中的导电通孔，其中电介质层在相邻电平之下的电极特征和固定电极层之上，以及 线之间穿孔特征。 线路电平包含导电线和含气隙的电介质。 包含导电接触并通过填充有孔电介质层形成的固体介质桥接层设置在散布的线路和通孔层的集合上。

公开(公告)号：US07212091B2

公开(公告)日：2007-05-01

申请号：US11053732

申请日：2005-02-08

申请人： Panayotis Constantinou Andricacos ,  L. Paivikki Buchwalter ,  Hariklia Deligianni ,  Robert A. Groves ,  Christopher Jahnes ,  Jennifer L. Lund ,  Michael Meixner ,  David Earle Seeger ,  Timothy D. Sullivan ,  Ping-Chuan Wang

发明人： Panayotis Constantinou Andricacos ,  L. Paivikki Buchwalter ,  Hariklia Deligianni ,  Robert A. Groves ,  Christopher Jahnes ,  Jennifer L. Lund ,  Michael Meixner ,  David Earle Seeger ,  Timothy D. Sullivan ,  Ping-Chuan Wang

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0078

摘要： A microelectromechanical switch including: at least one pair of actuator electrodes; at least one input electrode and at least one output electrode for input and output, respectively, of a radio frequency signal; and a beam movable by an attraction between the at least one pair of actuator electrodes, the movable beam having at least a portion electrically connected to the at least one input electrode and to the at least one output electrode when moved by the attraction between the at least one pair of actuator electrodes to make an electrical connection between the at least one input and output electrodes; wherein the at least one pair of actuator electrodes are electrically isolated from each of the at least one input and output electrodes. The microelectromechanical switch can be configured in single or multiple-poles and/or single or multiple throws.

摘要翻译： 一种微机电开关，包括：至少一对致动器电极; 分别输入和输出射频信号的至少一个输入电极和至少一个输出电极; 以及可由所述至少一对致动器电极之间的吸引部移动的光束，所述可移动光束具有至少一部分电连接到所述至少一个输入电极，并且当所述至少一个输入电极在所述至少一个输入电极之间被所述吸引力移动时， 至少一对致动器电极，用于在所述至少一个输入和输出电极之间形成电连接; 其中所述至少一对致动器电极与所述至少一个输入和输出电极中的每一个电隔离。 微机电开关可以配置为单极或多极和/或单掷或多掷。

公开(公告)号：US20060017533A1

公开(公告)日：2006-01-26

申请号：US10523310

申请日：2002-08-26

申请人： Christopher Jahnes ,  Jennifer Lund ,  Katherine Saenger ,  Richard Volant

发明人： Christopher Jahnes ,  Jennifer Lund ,  Katherine Saenger ,  Richard Volant

IPC分类号： H01H51/22

CPC分类号： H01H59/0009

摘要： A micro-electromechanical (MEM) RF switch provided with a deflectable membrane (60) activates a switch contact or plunger (40). The membrane incorporates interdigitated metal electrodes (70) which cause a stress gradient in the membrane when activated by way of a DC electric field. The stress gradient results in a predictable bending or displacement of the membrane (60), and is used to mechanically displace the switch contact (30). An RF gap area (25) located within the cavity (250) is totally segregated from the gaps (71) between the interdigitated metal electrodes (70). The membrane is electrostatically displaced in two opposing directions, thereby aiding to activate and deactivate the switch. The micro-electromechanical switch includes: a cavity (250); at least one conductive path (20) integral to a first surface bordering the cavity; a flexible membrane (60) parallel to the first surface bordering the cavity (250), the flexible membrane (60) having a plurality of actuating electrodes (70); and a plunger (40) attached to the flexible membrane (60) in a direction away from the actuating electrodes (70), the plunger (40) having a conductive surface that makes electric contact with the conductive paths, opening and closing the switch.

摘要翻译： 设置有可偏转膜（60）的微机电（MEM）RF开关激活开关触点或柱塞（40）。 膜包含交叉指向的金属电极（70），其通过DC电场激活时引起膜中的应力梯度。 应力梯度导致膜（60）的可预测的弯曲或位移，并且用于机械地移动开关触点（30）。 位于空腔（250）内的RF间隙区域（25）与交叉指向的金属电极（70）之间的间隙（71）完全分离。 膜在两个相反的方向上静电位移，从而有助于启动和停用开关。 微机电开关包括：空腔（250）; 至少一个导电通路（20），与所述空腔相邻的第一表面成一体; 柔性膜（60），其平行于与所述腔（250）接壤的所述第一表面，所述柔性膜（60）具有多个致动电极（70）; 以及沿远离所述致动电极（70）的方向附接到所述柔性膜（60）的柱塞（40），所述柱塞（40）具有导电表面，所述导电表面与所述导电路径电接触，所述开关闭合。

公开(公告)号：US06486557B1

公开(公告)日：2002-11-26

申请号：US09515110

申请日：2000-02-29

申请人： Charles R. Davis ,  Daniel Charles Edelstein ,  John C. Hay ,  Jeffrey C. Hedrick ,  Christopher Jahnes ,  Vincent McGahay ,  Henry A. Nye, III

发明人： Charles R. Davis ,  Daniel Charles Edelstein ,  John C. Hay ,  Jeffrey C. Hedrick ,  Christopher Jahnes ,  Vincent McGahay ,  Henry A. Nye, III

IPC分类号： H01L2348

CPC分类号： H01L21/76808 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multi-level, coplanar copper damascene interconnect structure on an integrated circuit chip includes a first planar interconnect layer on an integrated circuit substrate and having plural line conductors separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A second planar interconnect layer on the first planar interconnect layer comprises a dielectric film having an elastic modulus higher than in the first planar interconnect layer and conductive vias therethrough. The vias are selectively in contact with the line conductors. A third planar interconnect layer on the second planar interconnect layer has plural line conductors separated by the dielectric material and selectively in contact with the vias.

摘要翻译： 集成电路芯片上的多层共面铜镶嵌互连结构包括在集成电路基板上的第一平面互连层，并且具有由具有相对较低的介电常数和相对低的弹性模量的介电材料隔开的多个线导体。 第一平面互连层上的第二平面互连层包括具有高于第一平面互连层的弹性模量和通过其的导电通孔的电介质膜。 通孔选择性地与线路导体接触。 第二平面互连层上的第三平面互连层具有被电介质材料隔开并选择性地与通孔接触的多个线导体。

公开(公告)号：US08163584B2

公开(公告)日：2012-04-24

申请号：US12101627

申请日：2008-04-11

申请人： Minhua Lu ,  Nils D. Hoivik ,  Christopher Jahnes ,  John M. Cotte ,  Hongqing Zhang

发明人： Minhua Lu ,  Nils D. Hoivik ,  Christopher Jahnes ,  John M. Cotte ,  Hongqing Zhang

IPC分类号： H01L21/00

CPC分类号： B81C1/00476 ,  G02B26/0841 ,  Y10T156/11 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/263

摘要： The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.

摘要翻译： 通过降低牺牲层和MEMS结构之间的界面强度，使MEMS器件的光束弯曲最小化。

公开(公告)号：US20080048305A1

公开(公告)日：2008-02-28

申请号：US11932385

申请日：2007-10-31

申请人： Gareth Hougham ,  S. Chey ,  James Doyle ,  Xiao Liu ,  Christopher Jahnes ,  Paul Lauro ,  Nancy LaBianca ,  Michael Rooks

发明人： Gareth Hougham ,  S. Chey ,  James Doyle ,  Xiao Liu ,  Christopher Jahnes ,  Paul Lauro ,  Nancy LaBianca ,  Michael Rooks

IPC分类号： H01L23/495 ,  H01B13/00

CPC分类号： B81B3/0035 ,  H01L2924/0002 ,  Y10T428/249986 ,  H01L2924/00

摘要： A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials.” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.

摘要翻译： 用于微电子封装中弹性体复合材料和导电弹性体互连的TCE补偿或CTE补偿的负热膨胀系统（NTE）装置。 本发明的一个方面提供了一种用于制造具有负热膨胀系数的微机械装置的方法，该热膨胀系数可以制成用于操纵材料的TCE的复合材料。 这些设备和这些设备制成的复合材料属于称为“智能材料”或“响应材料”的材料类别。 本发明的另一方面提供了由双重相对的双层材料构成的微器件，其中两个双层仅在外围边缘处彼此附接，并且其中双层本身处于由温度定义的参考温度下的最小应力条件 双层形成。 当器件温度降低到参考温度或加工温度以下时，这些器件具有技术上有用的特性。

公开(公告)号：US07202764B2

公开(公告)日：2007-04-10

申请号：US10604278

申请日：2003-07-08

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US20050024169A1

公开(公告)日：2005-02-03

申请号：US10915742

申请日：2004-08-11

申请人： Hariklia Deligianni ,  Christopher Jahnes ,  Jennifer Lund ,  Lawrence Larson

发明人： Hariklia Deligianni ,  Christopher Jahnes ,  Jennifer Lund ,  Lawrence Larson

IPC分类号： H01H59/00 ,  H01H53/00

CPC分类号： H01H59/0009 ,  H01H2001/0068 ,  H01H2001/0078

摘要： A switch comprising a substrate, an elongated movable part, a pair of electrical contacts disposed at one side of said part, an actuation electrode disposed at the one side of the part and separated from the pair of electrical contacts, wherein the part, the contacts and the electrode are disposed on the substrate, wherein the elongated movable part is arranged and dimensioned such that the part is movable in a generally lateral direction toward the contacts; the movable part includes a central elongated member fixed to a head having an electrical contact disposed at the one side. One end of the movable part is attached to the substrate by means of various anchoring arrangements.

摘要翻译： 一种开关，其包括基板，细长可动部分，设置在所述部分一侧的一对电触点，设置在该部分的一侧并与所述一对电触头分离的致动电极，其中所述部分，所述触点 并且所述电极设置在所述基板上，其中所述细长可动部分被布置和尺寸设定成使得所述部件能够沿大致横向方向朝向所述触点移动; 可移动部分包括固定到头部的中心细长构件，其具有设置在一侧的电触头。 可移动部分的一端通过各种锚定装置附接到基板。

公开(公告)号：US06758223B1

公开(公告)日：2004-07-06

申请号：US09603254

申请日：2000-06-23

申请人： Andy Cowley ,  Peter Emmi ,  Timothy Dalton ,  Christopher Jahnes

发明人： Andy Cowley ,  Peter Emmi ,  Timothy Dalton ,  Christopher Jahnes

IPC分类号： B08B600

CPC分类号： H01L21/02063 ,  H01L21/31138 ,  H01L21/76804 ,  H01L21/76807 ,  Y10S134/902 ,  Y10S438/906

摘要： A method for removal of post reactive ion etch by-product from a semiconductor wafer surface or microelectronic composite structure comprising: supplying a reducing gas plasma incorporating a forming gas mixture selected from the group consisting of a mixture of N2/H2 or a mixture of NH3/H2 into a vacuum chamber in which a semiconductor wafer surface or a microelectronic composite structure is supported to form a post-RIE polymer material by-product on the composite structure without significant removal of an organic, low K material which has also been exposed to the reducing gas plasma; and removing the post-RIE polymer material by-product with a wet clean.

摘要翻译： 一种用于从半导体晶片表面或微电子复合结构去除后反应离子蚀刻副产物的方法，包括：提供还原气体等离子体，该还原气体等离子体包含选自N2 / H2或NH3混合物的成形气体混合物 / H2进入真空室，其中半导体晶片表面或微电子复合结构被支撑以在复合结构上形成后RIE聚合物材料副产物，而不显着除去已经暴露于 还原气体等离子体; 并用湿式清洁剂除去后RIE聚合物材料副产物。