Abstract:
Provided is a substrate structure including a substrate body, electrical contact pads and an insulating protection layer disposed on the substrate body, wherein the insulating protection layer has openings exposing the electrical contact pads, and at least one of the electrical contact pads has at least a concave portion filled with a filling material to prevent solder material from permeating along surfaces of the insulating protection layer and the electric contact pads, thereby eliminating the phenomenon of solder extrusion. Thus, bridging in the substrate structure can be eliminated even when the bump pitch between two adjacent electrical contact pads is small. As a result, short circuits can be prevented, and production yield can be increased.
Abstract:
An electronic package is provided, which includes: a first substrate; a first electronic component disposed on the first substrate; a second substrate stacked on the first substrate through a plurality of first conductive elements and a plurality of second conductive elements and bonded to the first electronic component through a bonding layer; and a first encapsulant formed between the first substrate and the second substrate. The first conductive elements are different in structure from the second conductive elements so as to prevent a mold flow of the first encapsulant from generating an upward pushing force during a molding process and hence avoid cracking of the second substrate. The present disclosure further provides a method for fabricating the electronic package.
Abstract:
A semiconductor device is disclosed, which includes: a substrate having a plurality of connecting pads; a semiconductor component having a plurality of bonding pads formed on a surface thereof and corresponding to the connecting pads and a UBM layer formed on the bonding pads; a plurality of conductive elements each having a first conductive portion and a second conductive portion sequentially formed on the UBM layer, wherein the second conductive portion is less in width than the first conductive portion; and a plurality of solder balls formed between the second conductive portions and the connecting pads for connecting the semiconductor component and the substrate, thereby preventing solder bridging from occurring between the adjacent conductive elements and reducing stresses between the conductive elements and the UBM layer.
Abstract:
A substrate structure is provided, including a substrate body and a plurality of circuits formed on the substrate body. At least one of the circuits has an electrical contact for connecting to an external element and the electrical contact is narrower in width than the circuit, thereby meeting the requirements of fine line/fine pitch and miniaturization, improving the product yield and reducing the fabrication cost.
Abstract:
A packaging substrate and a package structure are provided. The packaging substrate includes a plurality of dielectric layers, two of which have a difference in thickness; and a plurality of circuit layers alternately stacked with the dielectric layers. Therefore, the package warpage encountered in the prior art is avoided.
Abstract:
A semiconductor package is disclosed, which includes: a packaging substrate; a semiconductor element disposed on the packaging substrate in a flip-chip manner; a stopping portion formed at edges of the semiconductor element; an insulating layer formed on an active surface of the semiconductor element and the stopping portion; and an encapsulant formed between the packaging substrate and the insulating layer. The insulating layer has a recessed portion formed on the stopping portion and facing the packaging substrate such that during a reliability test, the recessed portion can prevent delamination occurring between the insulating layer and the stopping portion from extending to the active surface of the semiconductor element.
Abstract:
A quad flat non-leaded (QFN) package structure with an electromagnetic interference (EMI) shielding function is proposed, including: a lead frame having a die pad, a plurality of supporting portions connecting to the die pad and a plurality of leads disposed around the periphery of the die pad without connecting to the die pad; a chip mounted on the die pad; bonding wires electrically connecting the chip and the leads; an encapsulant for encapsulating the chip, the bonding wires and the lead frame and exposing the side and bottom surfaces of the leads and the bottom surface of the die pad; and a shielding film disposed on the top and side surfaces of the encapsulant and electrically connecting to the supporting portions for shielding from EMI. A method of fabricating the package structure as described above is further proposed.
Abstract:
An interconnection structure for being formed on bonding pads of a substrate in a semiconductor package is provided. The interconnection structure includes a nickel layer formed on each of the bonding pads, a metal layer formed on the nickel layer, and a solder material formed on the metal layer. The metal layer is made of one of gold, silver, lead and copper, and has a thickness in the range of 0.5 to 5 um. As such, when the solder material is reflowed to form solder bumps, no nickel-tin compound is formed between the solder bumps and the metal layer, thereby avoiding cracking or delamination of the solder bumps.
Abstract:
A substrate structure is provided, including a substrate body and a plurality of circuits formed on the substrate body. At least one of the circuits has an electrical contact for connecting to an external element and the electrical contact is narrower in width than the circuit, thereby meeting the requirements of fine line/fine pitch and miniaturization, improving the product yield and reducing the fabrication cost.