公开(公告)号：US20070145397A1

公开(公告)日：2007-06-28

申请号：US11608439

申请日：2006-12-08

申请人： Steven DenBaars ,  Shuji Nakamura ,  James Speck

发明人： Steven DenBaars ,  Shuji Nakamura ,  James Speck

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  G02B6/0018 ,  H01L33/507 ,  H01L33/508 ,  H01L33/58 ,  H01L33/60 ,  H01L2933/0091

摘要： An (Al, Ga, In)N light emitting diode (LED), wherein light extraction from chip and/or phosphor conversion layer is optimized. By novel shaping of LED and package optics, a high efficiency light emitting diode is achieved.

摘要翻译： 一种（Al，Ga，In）N发光二极管（LED），其中从芯片和/或磷光体转换层的光提取被优化。 通过LED和封装光学器件的新颖成形，实现了高效率的发光二极管。

公开(公告)号：US20070093073A1

公开(公告)日：2007-04-26

申请号：US11444946

申请日：2006-06-01

申请人： Robert Farrell ,  Troy Baker ,  Arpan Chakraborty ,  Benjamin Haskell ,  P. Pattison ,  Rajat Sharma ,  Umesh Mishra ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

发明人： Robert Farrell ,  Troy Baker ,  Arpan Chakraborty ,  Benjamin Haskell ,  P. Pattison ,  Rajat Sharma ,  Umesh Mishra ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.

摘要翻译： 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

公开(公告)号：US20060284206A1

公开(公告)日：2006-12-21

申请号：US11472186

申请日：2006-06-21

申请人： Hisashi Masui ,  Shuji Nakamura ,  Steven DenBaars

发明人： Hisashi Masui ,  Shuji Nakamura ,  Steven DenBaars

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  G02F1/133603 ,  G02F1/13362 ,  H01L23/544 ,  H01L33/20 ,  H01L33/483 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2924/0002 ,  H01L2924/00

摘要： A polarized light emitting diode (LED) includes a marker indicating a polarization direction. A package for the LED also includes a marker indicating the polarization direction. The markers on the LED and package are used for mutual alignment, wherein the LED is attached in a favorable orientation with respect to a package, so that the polarization direction of emitted light from the package is apparent. The marker is placed on the LED before die separation and the marker is placed on the package before alignment. The marker on the LED comprises a photolithographic pattern, an asymmetric die shape, a notch on the die, or a scratch on the die, while the marker on the package comprises an electrode shape or pattern, an asymmetric package shape, a notch on the package, or a scratch on the package. Finally, the LED or package may be installed in an external circuit or system that also indicates the polarization direction.

公开(公告)号：US20060054905A1

公开(公告)日：2006-03-16

申请号：US10938704

申请日：2004-09-10

申请人： Carole Schwach ,  Claude Weisbuch ,  Steven DenBaars ,  Henri Benisty ,  Shuji Nakamura

发明人： Carole Schwach ,  Claude Weisbuch ,  Steven DenBaars ,  Henri Benisty ,  Shuji Nakamura

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/08 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/405 ,  H01L33/505

摘要： A white, single or multi-color light emitting diode (LED) includes a mirror for reflecting photons within the LED; a first active region, adjacent the mirror, including one or more current-injected layers for emitting photons when electrically biased in a forward direction; a second active region, adjacent the first active region, including one or more optically-pumped layers for emitting photons, wherein the optically-pumped layers are optically excited by the photons emitted by the current-injected layers, thereby recycling guided modes; and an output interface, adjacent the second active region, for allowing the photons emitted by the optically-pumped layers to escape the LED as emitted light.

摘要翻译： 白色，单色或多色发光二极管（LED）包括用于反射LED内的光子的反射镜; 邻近反射镜的第一有源区，包括一个或多个电流注入层，用于在向前方向上电偏置时发射光子; 邻近第一有源区的第二有源区，包括用于发射光子的一个或多个光学泵浦层，其中光泵浦层被电流注入层发射的光子激发，从而循环引导模式; 以及与第二有源区相邻的输出接口，用于允许由光泵浦层发射的光子作为发射光而逸出LED。

公开(公告)号：US20060049411A1

公开(公告)日：2006-03-09

申请号：US10848937

申请日：2004-05-18

申请人： Shuji Nakamura ,  Steven DenBaars ,  John Edmond ,  Chuck Swoboda ,  Umesh Mishra

发明人： Shuji Nakamura ,  Steven DenBaars ,  John Edmond ,  Chuck Swoboda ,  Umesh Mishra

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/465 ,  H01L33/0079 ,  H01L33/105 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

摘要： A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.

摘要翻译： 根据本发明的用于制造高光提取光子器件的方法，包括在衬底上生长外延半导体结构并在外延半导体结构上沉积第一镜面层，使得外延半导体结构夹在第一镜面层和衬底之间 。 倒装芯片将外延半导体结构安装，其第一反射镜和衬底位于基座上，使得外延半导体器件结构夹在底座和衬底之间。 然后通过向衬底引入蚀刻环境，从衬底去除衬底。 第二镜层沉积在外延半导体结构上，使得外延半导体结构夹在第一和第二镜层之间。 根据本发明的装置包括安装到底座的谐振腔发光二极管（RCLED）。

公开(公告)号：US20080087909A1

公开(公告)日：2008-04-17

申请号：US11923414

申请日：2007-10-24

申请人： Claude Weisbuch ,  Aurelien David ,  James Speck ,  Steven DenBaars

发明人： Claude Weisbuch ,  Aurelien David ,  James Speck ,  Steven DenBaars

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L2933/0083

摘要： A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.

摘要翻译： 具有高提取效率的单色或多色发光二极管（LED）由衬底，形成在衬底上的缓冲层，沉积在缓冲层顶部上的一个或多个图案化层和形成的一个或多个有源层组成 在图案化层之间或之间，例如通过横向外延生长（LEO），并且包括一个或多个发光物质，例如量子阱。 图案化层包括由绝缘，半导体或金属材料制成的图案化，穿孔或穿孔掩模，以及填充掩模中的孔的材料。 由于掩模和填充掩模中的孔的材料之间的折射率的变化，由于折射率与有源层和/或作为掩埋衍射光栅的对比，图案化层用作光学限制层。

公开(公告)号：US20070218655A1

公开(公告)日：2007-09-20

申请号：US11655572

申请日：2007-01-19

申请人： Hitoshi Sato ,  John Kaeding ,  Michael Iza ,  Troy Baker ,  Benjamin Haskell ,  Steven DenBaars ,  Shuji Nakamura

发明人： Hitoshi Sato ,  John Kaeding ,  Michael Iza ,  Troy Baker ,  Benjamin Haskell ,  Steven DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/20

CPC分类号： H01L29/045 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02365 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

摘要： A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

摘要翻译： 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地说，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，沉积In x N 1 Ga 1-x

公开(公告)号：US20070111488A1

公开(公告)日：2007-05-17

申请号：US11621479

申请日：2007-01-09

申请人： Arpan Chakraborty ,  Benjamin Haskell ,  Stacia Keller ,  James Speck ,  Steven DenBaars ,  Shuji Nakamura ,  Umesh Mishra

发明人： Arpan Chakraborty ,  Benjamin Haskell ,  Stacia Keller ,  James Speck ,  Steven DenBaars ,  Shuji Nakamura ,  Umesh Mishra

IPC分类号： H01L21/20

CPC分类号： H01L33/06 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0075 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

摘要翻译： 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。

公开(公告)号：US20060270087A1

公开(公告)日：2006-11-30

申请号：US11444083

申请日：2006-05-31

申请人： Bilge Imer ,  James Speck ,  Steven DenBaars

发明人： Bilge Imer ,  James Speck ,  Steven DenBaars

IPC分类号： H01L21/00

CPC分类号： H01L21/02658 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262

摘要： A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AIN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.

摘要翻译： 生长平面非极性m面III-氮化物材料的方法，例如m面氮化镓（GaN）外延层，其中III-氮化物材料生长在合适的衬底上，例如m面硅 碳化物（m-SiC）基板，使用金属有机化学气相沉积（MOCVD）。 该方法包括进行溶剂清洁和浸渍底物以从表面除去氧化物，退火基板，在退火的基板上生长诸如氮化铝（AIN）的成核层，以及生长非极性m面 使用MOCVD在成核层上的III-氮化物外延层。

公开(公告)号：US20060205199A1

公开(公告)日：2006-09-14

申请号：US11372914

申请日：2006-03-10

申请人： Troy Baker ,  Benjamin Haskell ,  Paul Fini ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

发明人： Troy Baker ,  Benjamin Haskell ,  Paul Fini ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  Y10S438/938

摘要： A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10{overscore (1)}1} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10{overscore (1)}3} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11{overscore (2)}2} gallium nitride (GaN) grown on a {1{overscore (1)}00} sapphire substrate, and (4) {11{overscore (1)}3} gallium nitride (GaN) grown on a {1{overscore (1)}00} sapphire substrate

摘要翻译： 一种在杂交尖晶石衬底上生长平面，半极性氮化物膜的方法，其中大面积的平面半极性氮化物膜平行于衬底的表面。 平面膜和衬底是：（1）在{100}尖晶石衬底上在{100}尖晶石衬底上生长的（10）{（氮化镓）氮化镓（GaN）（2）{10 {超（13）氮化镓（GaN） 在{110}尖晶石衬底上生长，（3）在{1 {超（100）蓝宝石衬底上生长的{11（超（22）个氮化镓（GaN））和（4）{11 {超（13） （GaN）生长在{1 {超（100）蓝宝石衬底上