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    Installation and method of nanofabrication
    21.
    发明授权
    Installation and method of nanofabrication 有权
    纳米加工的安装和方法

    公开(公告)号：US08101925B2

    公开(公告)日：2012-01-24

    申请号：US12279888

    申请日：2007-02-16

    Applicant: Jacques Gierak

    Inventor： Jacques Gierak

    IPC: G21G5/00

    CPC classification number: H01J37/20 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G01Q80/00 ,  H01J37/3174 ,  H01J2237/20228 ,  H01J2237/20235 ,  H01J2237/20264 ,  H01J2237/244 ,  H01J2237/31732 ,  H01J2237/31737 ,  H01J2237/31755 ,  H01J2237/31788

    Abstract: Nanofabrication installation comprising: a specimen holder, for holding a specimen; a mask, having a through-opening between the upper and lower faces of the mask, for letting charged particles through onto the specimen holder; a near-field detection device for detecting a relative position between the mask (8) and the specimen holder (3); and a displacement device for generating a relative movement between the mask (8) and the specimen holder (3) independently of the relative position between the source (1) and the mask (8), the mask including at least a first electrode in the through-opening (10).

    Abstract translation: 纳米加工装置包括：用于保持试样的试样架; 掩模，在掩模的上表面和下表面之间具有通孔，用于使带电粒子通过样本保持器; 用于检测所述掩模（8）和所述检体保持器（3）之间的相对位置的近场检测装置; 以及位移装置，用于独立于所述源（1）和所述掩模（8）之间的相对位置产生所述掩模（8）和所述检体保持器（3）之间的相对运动，所述掩模至少包括所述第一电极 通孔（10）。

    INSTALLATION AND METHOD OF NANOFABRICATION
    23.
    发明申请
    INSTALLATION AND METHOD OF NANOFABRICATION 有权
    NANOFABRICATION的安装和方法

    公开(公告)号：US20090095923A1

    公开(公告)日：2009-04-16

    申请号：US12279888

    申请日：2007-02-16

    Applicant: Jacques Gierak

    Inventor： Jacques Gierak

    IPC: A61N5/00

    CPC classification number: H01J37/20 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G01Q80/00 ,  H01J37/3174 ,  H01J2237/20228 ,  H01J2237/20235 ,  H01J2237/20264 ,  H01J2237/244 ,  H01J2237/31732 ,  H01J2237/31737 ,  H01J2237/31755 ,  H01J2237/31788

    Abstract: Nanofabrication installation comprising: a specimen holder, for holding a specimen; a mask, having a through-opening between the upper and lower faces of the mask, for letting charged particles through onto the specimen holder; a near-field detection device for detecting a relative position between the mask (8) and the specimen holder (3); and a displacement device for generating a relative movement between the mask (8) and the specimen holder (3) independently of the relative position between the source (1) and the mask (8), the mask including at least a first electrode in the through-opening (10).

    Abstract translation: 纳米加工装置包括：用于保持试样的试样架; 掩模，在掩模的上表面和下表面之间具有通孔，用于使带电粒子通过样本保持器; 用于检测所述掩模（8）和所述检体保持器（3）之间的相对位置的近场检测装置; 以及位移装置，用于独立于所述源（1）和所述掩模（8）之间的相对位置产生所述掩模（8）和所述检体保持器（3）之间的相对运动，所述掩模至少包括所述第一电极 通孔（10）。

    Charged particle beam system
    26.
    发明授权
    Charged particle beam system 有权
    带电粒子束系统

    公开(公告)号：US06979822B1

    公开(公告)日：2005-12-27

    申请号：US10801981

    申请日：2004-03-16

    Applicant: Diane K. Stewart ,  W. Ralph Knowles ,  Brian T. Kimball

    Inventor： Diane K. Stewart ,  W. Ralph Knowles ,  Brian T. Kimball

    IPC: H01J37/244 ,  G01N23/00 ,  G01N23/225 ,  H01J37/02 ,  H01J37/252 ,  H01J37/28 ,  H01J37/317 ,  H01L21/027

    CPC classification number: G01N23/225 ,  H01J37/244 ,  H01J2237/0045 ,  H01J2237/2817 ,  H01J2237/31737 ,  H01J2237/31742 ,  H01J2237/31798

    Abstract: A charged particle beam system uses an ion generator for charge neutralization. In some embodiments, the ion generator is configured to maintain an adequate gas pressure at the ion generator to generate ions, but a reduced pressure in the remainder of the vacuum chamber, so that another column can operate in the chamber either simultaneously or after an evacuation process that is much shorter than a process that would be required to evacuate the chamber from the full pressure required at the ion generator. The invention is particularly useful for repair of photolithography masks in a dual beam system.

    Abstract translation: 带电粒子束系统使用离子发生器进行电荷中和。 在一些实施例中，离子发生器被配置为在离子发生器处保持​​足够的气体压力以在真空室的其余部分中产生离子而减小压力，使得另一个柱可以同时或在排空之后在腔室中操作 该过程远远短于将离子发生器所需的全部压力从室内排出所需的过程。 本发明对于双光束系统中的光刻掩模的修复特别有用。

    Fabrication of high resistivity structures using focused ion beams
    27.
    发明授权
    Fabrication of high resistivity structures using focused ion beams 有权
    使用聚焦离子束制造高电阻率结构

    公开(公告)号：US06838380B2

    公开(公告)日：2005-01-04

    申请号：US10055320

    申请日：2002-01-23

    Applicant: Neil J. Bassom ,  Tung Mai

    Inventor： Neil J. Bassom ,  Tung Mai

    IPC: C23C16/48 ,  C23C16/04 ,  H01L21/02 ,  H01L21/285 ,  H01L21/44

    CPC classification number: H01L28/24 ,  C23C16/047 ,  H01J37/08 ,  H01J2237/31737 ,  H01J2237/31749 ,  H01L21/28562

    Abstract: The present invention provides a method for creating microscopic high resistivity structures on a target by directing a focused ion beam toward an impact point on the target and directing a precursor gas toward the impact point, the ion beam causing the precursor gas to decompose and thereby deposit a structure exhibiting high resistivity onto the target. The precursor gas preferably contains a first compound that would form a conductive layer and a second compound that would form an insulating layer if each of the first and second compounds were applied alone in the presence of the ion beam.

    Abstract translation: 本发明提供了一种用于通过将聚焦离子束引向目标上的冲击点并将前体气体引向冲击点的方式，用于在目标上产生微观高电阻率结构的方法，所述离子束使前体气体分解并由此沉积 在靶上表现出高电阻率的结构。 如果在离子束存在下单独施加第一和第二化合物，则前体气体优选含有形成导电层的第一化合物和将形成绝缘层的第二化合物。

    Method and apparatus for forming a trench through a semiconductor substrate
    28.
    发明申请
    Method and apparatus for forming a trench through a semiconductor substrate 失效
    通过半导体衬底形成沟槽的方法和装置

    公开(公告)号：US20030224601A1

    公开(公告)日：2003-12-04

    申请号：US10160606

    申请日：2002-05-30

    Inventor： Erwan Le Roy ,  Mark A. Thompson

    IPC: H01L021/302 ,  H01L021/461 ,  H01L021/311

    CPC classification number: H01J37/3005 ,  H01J37/228 ,  H01J37/3056 ,  H01J2237/2482 ,  H01J2237/30455 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01L21/2633 ,  H01L21/26506 ,  H01L21/3065 ,  H01L21/31105

    Abstract: Apparatus and method for exposing a selected feature of an integrated circuit device such as a selected portion of the metallization layer, from the backside of the integrated circuit substrate without disturbing adjacent features of the device such as the active semiconductor regions. This is performed using an FIB (focused ion beam) etching process in conjunction with observation by an optical microscope to form a trench through the substrate. The floor of the trench is formed so as to be as smooth and planar as possible, thereby preventing undesirable exposure of the underlying active regions through any unknown or undesired cavity caused by scratches or pits or a deeper than desired sidewall. The smoothness and planarity of the floor of the trench is established by, prior to forming the trench, removing any surface defect initially present by using an FIB etching without use of assist gas to eliminate most scratches or impurities on the surface of the silicon, followed by removal of implanted ions using a gas-injected assisted FIB etch. Then the actual trench is formed using an assisted etch using a more aggressive injected gas.

    Abstract translation: 用于从集成电路衬底的背面暴露诸如金属化层的选定部分的集成电路器件的选定特征的装置和方法，而不干扰诸如有源半导体区域的器件的相邻特征。 这是通过FIB（聚焦离子束）蚀刻工艺结合光学显微镜的观察来进行的，以通过衬底形成沟槽。 沟槽的底部形成为尽可能平坦和平坦，从而防止潜在的有源区域通过由划痕或凹坑或更深于期望的侧壁引起的任何未知或不期望的空腔的不希望的暴露。 通过在形成沟槽之前，通过使用FIB蚀刻而不使用辅助气体来除去最初存在的任何表面缺陷，以消除硅表面上的大多数划痕或杂质，建立沟槽底板的平滑度和平坦度，随后 通过使用气体注入的辅助FIB蚀刻去除注入的离子。 然后使用更积极的注入气体的辅助蚀刻形成实际沟槽。

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