公开(公告)号：US20170029977A1

公开(公告)日：2017-02-02

申请号：US15121177

申请日：2015-02-10

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Kazunori HAGIMOTO ,  Masaru SHINOMIYA ,  Keitaro TSUCHIYA ,  Hirokazu GOTO ,  Ken SATO ,  Hiroshi SHIKAUCHI ,  Shoichi KOBAYASHI ,  Hirotaka KURIMOTO

IPC分类号： C30B33/00 ,  C30B33/10 ,  C30B29/40 ,  C23C16/56 ,  H01L29/32 ,  H01L21/02 ,  H01L21/66 ,  H01L21/78 ,  H01L29/20 ,  C30B25/18 ,  C23C16/34

CPC分类号： C30B33/00 ,  C23C16/34 ,  C23C16/56 ,  C30B25/00 ,  C30B25/183 ,  C30B29/406 ,  C30B33/10 ,  H01L21/02013 ,  H01L21/02019 ,  H01L21/02021 ,  H01L21/02024 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/7806 ,  H01L22/12 ,  H01L22/20 ,  H01L29/2003 ,  H01L29/32

摘要： A method for producing a semiconductor epitaxial wafer, including steps of: fabricating an epitaxial wafer by epitaxially growing a semiconductor layer on a silicon-based substrate; observing the outer edge portion of the fabricated epitaxial wafer; and removing portions in which a crack, epitaxial layer peeling, and a reaction mark observed in the step of observing are present. As a result, a method for producing a semiconductor epitaxial wafer in which a completely crack-free semiconductor epitaxial wafer can be obtained, is provided.

摘要翻译： 一种制造半导体外延晶片的方法，包括以下步骤：通过在硅基基板上外延生长半导体层来制造外延晶片; 观察制造的外延晶片的外边缘部分; 并且存在在观察步骤中观察到的裂纹，外延层剥离和反应标记的去除部分。 结果，提供了可以获得完全无裂纹的半导体外延晶片的半导体外延晶片的制造方法。

公开(公告)号：US09543393B2

公开(公告)日：2017-01-10

申请号：US13834871

申请日：2013-03-15

申请人： SixPoint Materials, Inc. ,  Seoul Semiconductor Co., Ltd.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： H01L29/201 ,  H01L29/20 ,  C30B7/10 ,  C30B29/40 ,  C30B33/10 ,  H01L21/02 ,  C30B33/00

CPC分类号： H01L29/201 ,  C30B7/105 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  H01L21/02013 ,  H01L21/02019 ,  H01L29/2003

摘要： The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.

摘要翻译： 本发明公开了一种III族氮化物晶片，例如GaN，AlN，InN及其合金，其一面在视觉上与其他表面不同。 在用诸如多线锯的机械方法从III族氮化物的块状晶体切片晶片之后，晶片被化学蚀刻，使得晶片的一个表面在视觉上与另一表面区分开。 本发明还公开了一种制造这种晶片的方法。

公开(公告)号：US20160315065A1

公开(公告)日：2016-10-27

申请号：US15203045

申请日：2016-07-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： CHEN-CHUN CHEN ,  CHIU-JUNG CHEN ,  FU-TSUN TSAI ,  SHIU-KO JANGJIAN ,  CHI-CHERNG JENG ,  HSIN-CHI CHEN

IPC分类号： H01L23/00 ,  H01L27/146 ,  H01L21/027 ,  H01L21/306 ,  H01L21/268

CPC分类号： H01L24/83 ,  H01L21/02019 ,  H01L21/0273 ,  H01L21/268 ,  H01L21/30604 ,  H01L21/76256 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/83201 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2224/8385 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2924/07025

摘要： A method of manufacturing a semiconductor structure includes providing a first wafer including a surface, removing some portions of the first wafer over the surface to form a plurality of recesses extended over at least a portion of the surface of the first wafer, providing a second wafer, and disposing the second wafer over the surface of the first wafer.

摘要翻译： 制造半导体结构的方法包括提供包括表面的第一晶片，去除表面上的第一晶片的一些部分以形成在第一晶片的表面的至少一部分上延伸的多个凹槽，从而提供第二晶片 并且将第二晶片设置在第一晶片的表面上。

公开(公告)号：US20160300707A1

公开(公告)日：2016-10-13

申请号：US15189772

申请日：2016-06-22

申请人： SCREEN Holdings Co., Ltd.

发明人： Toshimitsu NAMBA

IPC分类号： H01L21/02 ,  H01L21/687 ,  H01L21/67

CPC分类号： H01L21/02019 ,  H01L21/67051 ,  H01L21/68728 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68792

摘要： A substrate processing apparatus includes a substrate holding part, a substrate rotating mechanism, and a chamber. The substrate rotating mechanism includes an annular rotor part disposed in an internal space of the chamber and a stator part disposed around the rotor part outside the chamber. The substrate holding part is attached to the rotor part in the internal space of the chamber. In the substrate rotating mechanism, a rotating force is generated about a central axis between the stator part and the rotor part. The rotor part is thereby rotated about the central axis, being in a floating state, together with a substrate and the substrate holding part. In the substrate processing apparatus, the substrate can be easily rotated in the internal space having excellent sealability. As a result, it is possible to easily perform single-substrate processing in a sealed internal space.

摘要翻译： 基板处理装置包括基板保持部，基板旋转机构和室。 基板旋转机构包括设置在室的内部空间中的环形转子部分和设置在室外部的转子部分周围的定子部分。 基板保持部分附接到室的内部空间中的转子部分。 在基板旋转机构中，绕定子部和转子部之间的中心轴产生旋转力。 因此，转子部件与衬底和衬底保持部分一起围绕中心轴线旋转，处于浮动状态。 在基板处理装置中，能够容易地在具有优异的密封性的内部空间中旋转基板。 结果，可以容易地在密封的内部空间中进行单基板处理。

公开(公告)号：US09379262B2

公开(公告)日：2016-06-28

申请号：US13623524

申请日：2012-09-20

申请人： Jer-Liang Yeh

发明人： Jer-Liang Yeh

IPC分类号： H01L21/306 ,  H01L31/0368 ,  H01L21/02

CPC分类号： H01L31/03682 ,  H01L21/02019 ,  H01L21/02021 ,  Y02E10/546

摘要： A wafer with high rupture resistance includes a plurality of surfaces, wherein the surfaces include a largest surface having a largest area than others and a side surface connected to the fringe of the largest surface. The side surface forms a nanostructured layer thereon to assist the stress dispersion of the wafer. Accordingly, the wafer is provided with a high rupture resistance so as to prevent the wafer from damages during semiconductor or other processes.

摘要翻译： 具有高抗断裂性的晶片包括多个表面，其中表面包括具有最大面积的最大表面和连接到最大表面的边缘的侧表面。 侧表面在其上形成纳米结构层以帮助晶片的应力分散。 因此，晶片具有高抗断裂性，以防止晶片在半导体或其它工艺过程中受损。

公开(公告)号：US20160020281A1

公开(公告)日：2016-01-21

申请号：US14870777

申请日：2015-09-30

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Keiji ISHIBASHI

IPC分类号： H01L29/16 ,  H01L29/04 ,  H01L29/36

CPC分类号： H01L29/1608 ,  C30B23/025 ,  C30B29/36 ,  C30B31/04 ,  H01L21/02002 ,  H01L21/02008 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/02378 ,  H01L21/0475 ,  H01L29/04 ,  H01L29/045 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66068 ,  H01L29/812

摘要： A silicon carbide substrate has a first main surface, and a second main surface opposite to the first main surface. A region including at least one main surface of the first and second main surfaces is made of single-crystal silicon carbide. In the one main surface, sulfur atoms are present at not less than 60×1010 atoms/cm2 and not more than 2000×1010 atoms/cm2, and carbon atoms as an impurity are present at not less than 3 at % and not more than 25 at %. Thereby, a silicon carbide substrate having a stable surface, a semiconductor device using the substrate, and methods for manufacturing them can be provided.

公开(公告)号：US09224590B2

公开(公告)日：2015-12-29

申请号：US14014761

申请日：2013-08-30

申请人： APPLE INC.

发明人： Michael Boshra

IPC分类号： G06K9/00 ,  G06K9/74 ,  H01L21/02

CPC分类号： H01L21/02013 ,  G06K9/0002 ,  G06K9/00026 ,  G06K9/00033 ,  H01L21/02019

摘要： A finger biometric sensor may include an array of finger biometric sensing pixels, and processing circuitry. The processing circuitry may be capable of acquiring finger biometric data from the array of finger biometric sensing pixels and generating image data from the finger biometric data. The image data may be generated based upon at least a finger sliding motion when a finger is slid adjacent the array of finger biometric sensing pixels, and a finger static positioning when the finger is statically positioned adjacent the array of finger biometric sensing pixels. The processing circuitry may also be capable of determining a match between the image data and enrolled image data.

摘要翻译： 手指生物测定传感器可以包括手指生物特征感测像素阵列和处理电路。 处理电路可能能够从手指生物特征感测像素阵列获取手指生物特征数据，并从手指生物特征数据生成图像数据。 当手指相对于手指生物测定感测像素的阵列相邻地滑动时，可以基于至少手指滑动运动来生成图像数据，以及当手指静态地定位在手指生物特征感测像素阵列附近时，手指静态定位。 处理电路还可以能够确定图像数据和注册的图像数据之间的匹配。

公开(公告)号：US20150332909A1

公开(公告)日：2015-11-19

申请号：US14704605

申请日：2015-05-05

申请人： DISCO CORPORATION

发明人： Katsuhiko Suzuki

IPC分类号： H01L21/02 ,  H01L23/544 ,  H01L21/78

CPC分类号： H01L21/304 ,  B24B1/00 ,  B24B7/228 ,  B24B19/02 ,  H01L21/02013 ,  H01L21/02016 ,  H01L21/02019 ,  H01L21/67092 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/544 ,  H01L41/338 ,  H01L2221/68327 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of processing a wafer includes: a grinding step of grinding a back surface of the wafer to form, on the back side of the wafer, a recess corresponding to a device region and an annular projecting portion corresponding to a peripheral marginal region; and a splitting groove forming step of forming, after the grinding step is conducted, a splitting groove for splitting the device region and the peripheral marginal region from each other at the boundary between the recess and the annular projecting portion, the splitting groove extending from the front surface of the wafer to reach the back surface of the wafer. The splitting groove is formed by dry etching.

摘要翻译： 一种处理晶片的方法包括：磨削步骤，研磨晶片的背面，以在晶片的背面形成对应于装置区域的凹部和对应于周边边缘区域的环形突出部分; 以及分割槽形成步骤，在所述研磨步骤之后，在所述凹部与所述环形突出部分之间的边界处形成用于将所述元件区域和所述周边边缘区域彼此分离的分割槽，所述分割槽从 晶片的前表面到达晶片的后表面。 分割槽通过干法蚀刻形成。

公开(公告)号：US09145332B2

公开(公告)日：2015-09-29

申请号：US13587458

申请日：2012-08-16

申请人： Karl Pilch

发明人： Karl Pilch

IPC分类号： H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  H01L21/02 ,  H01L21/67 ,  H01L21/66

CPC分类号： C03C15/00 ,  H01J2237/2001 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/6708 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/12 ,  H01L22/26

摘要： An etchant is supplied to a workpiece. Furthermore, the workpiece is irradiated with spatially modulated light to adjust a temperature profile of said workpiece while etchant is supplied.

摘要翻译： 向工件提供蚀刻剂。 此外，用空间调制的光照射工件，以在施加蚀刻剂的同时调节所述工件的温度分布。

公开(公告)号：US20150137319A1

公开(公告)日：2015-05-21

申请号：US14579460

申请日：2014-12-22

申请人： SUMITOMO ELECTRIC INDUSTIES, LTD.

发明人： Keiji ISHIBASHI

IPC分类号： H01L33/30 ,  H01L33/16 ,  H01L33/02

CPC分类号： H01L33/30 ,  C30B23/025 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02013 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/30621 ,  H01L24/32 ,  H01L29/2003 ,  H01L33/025 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

摘要： In a semiconductor device 100, it is possible to prevent C from piling up at a boundary face between an epitaxial layer 22 and a group III nitride semiconductor substrate 10 by the presence of 30×1010 pieces/cm2 to 2000×1010 pieces/cm2 of sulfide in terms of S and 2 at % to 20 at % of oxide in terms of O in a surface layer 12. By thus preventing C from piling up, a high-resistivity layer is prevented from being formed on the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10. Accordingly, it is possible to reduce electrical resistance at the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10, and improve the crystal quality of the epitaxial layer 22. Consequently, it is possible to improve the emission intensity and yield of the semiconductor device 100.

摘要翻译： 在半导体器件100中，可以通过存在30×10 10片/ cm 2〜2000×10 10片/ cm 2的范围来防止C在外延层22和III族氮化物半导体衬底10之间的边界面堆积 表面层12中的S为硫化物，以O计为2at％〜20at％的氧化物。通过防止C堆积，可以防止在外延层之间的界面上形成高电阻率层 层22和III族氮化物半导体衬底10.因此，可以减小外延层22和III族氮化物半导体衬底10之间的边界面处的电阻，并且提高外延层22的晶体质量。结果 ，可以提高半导体装置100的发光强度和产量。