公开(公告)号：US06485783B1

公开(公告)日：2002-11-26

申请号：US09704644

申请日：2000-11-01

申请人： Robert J. Bailey ,  Lisa H. Michael ,  Thomas E. Kane

发明人： Robert J. Bailey ,  Lisa H. Michael ,  Thomas E. Kane

IPC分类号： C23C1606

CPC分类号： C23C28/345 ,  C23C16/4404 ,  C23C16/54 ,  C23C28/321

摘要： A chemical vapor deposition (CVD) system is provided for processing a substrate 110. The system 100 includes a heated muffle 115, a chamber 120 having an injector assembly 130 for introducing chemical vapor to process the substrate 110, and a belt 105 for moving the substrate through the muffle and chamber. The belt 105 has an oxidation-resistant coating 175 to reduce formation of deposits thereon. The coating 175 is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating 175 comprises a securely-adhered oxide layer 185 that is substantially free of transition metals. Preferably, the oxidation-resistant coating 175 comprises aluminum oxide. More preferably, the coating 175 comprises an aluminum oxide layer 185 securely adhered over a nickel aluminide layer 180.

摘要翻译： 提供了用于处理衬底110的化学气相沉积（CVD）系统。系统100包括加热的马弗炉115，具有用于引入化学蒸汽以处理衬底110的喷射器组件130的腔室120和用于移动 衬底通过马弗炉和腔室。 带105具有抗氧化涂层175以减少沉积物的形成。 涂层175特别可用于在由含铬合金制成的带上形成铬氧化物。 在一个实施例中，抗氧化涂层175包括基本上不含过渡金属的牢固粘附的氧化物层185。 优选地，抗氧化涂层175包括氧化铝。 更优选地，涂层175包括牢固地粘附在镍铝层180上的氧化铝层185。

公开(公告)号：US06472018B1

公开(公告)日：2002-10-29

申请号：US09511857

申请日：2000-02-23

申请人： Bruce M. Warnes ,  Joel Lee Cockerill ,  John Edward Schilbe

发明人： Bruce M. Warnes ,  Joel Lee Cockerill ,  John Edward Schilbe

IPC分类号： C23C1606

CPC分类号： C23C28/321 ,  C23C4/02 ,  C23C28/325 ,  C23C28/345 ,  C23C28/3455 ,  Y02T50/67 ,  Y10T428/12458 ,  Y10T428/12472 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/12736 ,  Y10T428/12931 ,  Y10T428/12944 ,  Y10T428/12993

摘要： An outwardly grown diffusion aluminide bondcoat is formed on a superalloy substrate and has higher concentrations of Al and Pt and lower concentrations of harmful impurities (e.g. Mo, W, Cr, Ta, S, etc.) at an outermost region of the bondcoat than at an innermost region thereof adjacent the substrate. The bondcoat is pretreated prior to deposition of a ceramic thermal insulative layer in a manner that reduces grain boundary ridges on the outermost bondcoat surface without adversely affecting the outermost region thereof, and then is heat treated to thermally grow a stable alpha alumina layer on the bondcoat prior to deposition of a ceramic layer.

摘要翻译： 外延生长的扩散铝化物键合涂层形成在超级合金基底上，并且在粘合剂涂层的最外区域具有较高浓度的Al和Pt以及较低浓度的有害杂质（例如Mo，W，Cr，Ta，S等），而不是 其最内侧区域与基板相邻。 粘结涂层在沉积陶瓷绝热层之前进行预处理，以减少最外层粘结涂层表面上的晶界脊，而不会对其最外区域产生不利影响，然后进行热处理以在粘合涂层上热稳定地生长α氧化铝层 在沉积陶瓷层之前。

公开(公告)号：US06440496B1

公开(公告)日：2002-08-27

申请号：US09487103

申请日：2000-01-19

申请人： Bhupendra K. Gupta ,  Thomas E. Mantkowski ,  Nripendra N. Das ,  Raymond W. Heidorn

发明人： Bhupendra K. Gupta ,  Thomas E. Mantkowski ,  Nripendra N. Das ,  Raymond W. Heidorn

IPC分类号： C23C1606

CPC分类号： C23C28/324 ,  C23C10/50 ,  C23C10/52 ,  C23C12/00 ,  C23C12/02 ,  C23C28/321 ,  C23C28/345 ,  C23C28/3455 ,  Y10T428/12549 ,  Y10T428/12611 ,  Y10T428/12618

摘要： A thermal barrier coating system and a method for forming the coating system on a component designed for use in a hostile thermal environment, such as superalloy turbine, combustor and augmentor components of a gas turbine engine. The coating system includes a diffusion aluminide bond coat whose oxide growth rate is significantly reduced to improve the spallation resistance of a thermal barrier layer by forming the bond coat to include a dispersion of aluminum, chromium, nickel, cobalt and/or platinum group metal oxides. The oxides preferably constitute about 5 to about 20 volume percent of the bond coat. A preferred method of forming the bond coat is to initiate a diffusion aluminizing process in the absence of oxygen to deposit a base layer of diffusion aluminide, and then intermittently introduce an oxygen-containing gas into the diffusion aluminizing process to form within the bond coat the desired dispersion of oxides. Thereafter, a ceramic layer is deposited on the bond coat to form a thermal barrier coating.

摘要翻译： 一种热障涂层系统和一种在设计用于恶劣热环境的部件上形成涂层系统的方法，例如燃气涡轮发动机的超级合金涡轮机，燃烧器和增压器部件。 涂层体系包括扩散铝化物粘合涂层，其氧化物生长速率显着降低，以通过形成粘合涂层来改善热障层的抗剥落性，包括铝，铬，镍，钴和/或铂族金属氧化物的分散体 。 氧化物优选构成约5至约20体积％的粘合涂层。 形成粘合涂层的优选方法是在不存在氧的情况下开始扩散镀铝工艺以沉积扩散铝化物的基底层，然后间歇地将含氧气体引入扩散镀铝工艺以在粘合涂层内形成 所需的氧化物分散体。 此后，在接合涂层上沉积陶瓷层以形成热障涂层。

公开(公告)号：US06428850B1

公开(公告)日：2002-08-06

申请号：US09613694

申请日：2000-07-10

申请人： Hiroshi Shinriki ,  Yijun Liu ,  Masahito Sugiura

发明人： Hiroshi Shinriki ,  Yijun Liu ,  Masahito Sugiura

IPC分类号： C23C1606

CPC分类号： C23C16/45574 ,  C23C16/405 ,  C23C16/409 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4586

摘要： A single-substrate-processing CVD apparatus is used for forming a BST thin film on a semiconductor wafer while supplying a first process gas containing a mixture of Ba(thd)2 and Sr(thd)2, and a second process gas containing Ti(O-iPr)(thd)2 or Ti(thd)2. Precursors of Ba and Sr have lower activation energies and higher resistivities than precursors of Ti. The first and second process gases are supplied from a shower head which has a group of first spouting holes for spouting the first process gas and a group of second spouting holes for spouting the second process gas. The group of the second spouting holes are designed to have diameters gradually decreasing in radial directions outward from the center of a shower region, such that the second process gas is supplied at a spouting rate gradually decreasing in radial directions outward from the center.

摘要翻译： 使用单基板处理CVD装置在半导体晶片上形成BST薄膜，同时供给包含Ba（thd）2和Sr（thd）2的混合物的第一工艺气体和含有Ti（ O-iPr）（thd）2或Ti（thd）2。 Ba和Sr的前体比Ti的前体具有更低的活化能和更高的电阻率。 第一和第二工艺气体由具有一组第一喷射孔的喷淋头供应，用于喷射第一处理气体和一组用于喷射第二处理气体的第二喷射孔。 第二喷射孔组被设计成具有从喷淋区域的中心向外径向逐渐减小的直径，使得以从中心向外径向逐渐减小的喷射速率供给第二处理气体。

公开(公告)号：US06387444B1

公开(公告)日：2002-05-14

申请号：US09511698

申请日：2000-02-23

申请人： Osamu Okada ,  Atsushi Sekiguchi

发明人： Osamu Okada ,  Atsushi Sekiguchi

IPC分类号： C23C1606

CPC分类号： C23C16/18 ,  C23C16/54

摘要： In the field of depositing a metal film for wiring purposes on a substrate by means of single-substrate processing CVD, a procedure for depositing a copper film on a substrate is carried out by utilizing a first CVD module in which film deposition is carried out under first film deposition conditions where the film deposition rate is low and the filling characteristics are good, and a second CVD module in which film deposition is carried out under second film deposition conditions where the film deposition rate is high and the filling characteristics are poor. One CVD film deposition process in which a metal film for wiring purposes is deposited is carried out with sub-processes based on two different sets of film deposition conditions.

摘要翻译： 在通过单基板处理CVD在衬底上沉积用于配线的金属膜的领域中，通过利用其中进行膜沉积的第一CVD模块来进行在衬底上沉积铜膜的步骤 成膜速度低，填充特性良好的第一膜沉积条件以及在成膜速度高，填充特性差的第二膜沉积条件下进行成膜的第二CVD模块。 用于布线目的的金属膜沉积的一个CVD膜沉积工艺是基于两组不同的膜沉积条件的子工艺进行的。

公开(公告)号：US06342277B1

公开(公告)日：2002-01-29

申请号：US09291807

申请日：1999-04-14

申请人： Arthur Sherman

发明人： Arthur Sherman

IPC分类号： C23C1606

CPC分类号： C23C16/45531 ,  C23C16/452 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C30B25/14

摘要： The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

摘要翻译： 本发明提供了使用在低压下操作的反应器的顺序化学气相沉积，泵去除过量的反应物，以及通过阀将气体引入反应器的管线。 第一反应物在待涂覆的部分上形成单层，而第二反应物通过自由基发生剂，其在第二反应物撞击到单层之前部分地将第二反应物分解或活化成气态。 该第二反应物不一定形成单层，但可用于与单层反应。 泵除去过量的第二反应物和反应产物完成了工艺循环。 可以重复该工艺循环以增长所需的膜厚度。

公开(公告)号：US06830780B2

公开(公告)日：2004-12-14

申请号：US09965478

申请日：2001-09-27

申请人： Ronald Petkie

发明人： Ronald Petkie

IPC分类号： C23C1606

CPC分类号： C04B41/89 ,  B23K35/001 ,  B32B2311/12 ,  B32B2311/30 ,  C04B35/52 ,  C04B37/006 ,  C04B37/026 ,  C04B41/009 ,  C04B41/52 ,  C04B2111/00844 ,  C04B2235/427 ,  C04B2237/122 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/363 ,  C04B2237/403 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/72 ,  H01L23/3732 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/29111 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/351 ,  Y10T428/265 ,  Y10T428/30 ,  C04B41/4529 ,  C04B41/5133 ,  C04B41/524 ,  C04B41/5127 ,  C04B41/5116 ,  C04B41/522 ,  C04B41/4501 ,  C04B41/4523 ,  C04B41/0072 ,  C04B41/5346 ,  C04B41/5105 ,  H01L2924/01022 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00015

摘要： A multilayer brazeable metallization structure for diamond components and method for producing it are described. The brazeable metallization finds particular application for the attachment of diamond components such as heat spreaders in electronic packages that incorporate high power semiconductor devices. In the present invention, a diamond component is provided with a multilayer coating of metals including depositing a first layer of chromium for adhesion onto at least a portion of the diamond component, depositing a second barrier layer of a refractory metal for a barrier onto at least portion of the chromium layer, and a top layer of copper, silver or gold for wetting. This top layer is thick (greater than 5 microns), without sacrificing resistance to delamination, particularly at brazing conditions. It is obtained by depositing a layer of a first metal onto at least a portion of the refractory metal layer, and depositing a layer of a second metal onto at least a portion of the first metal layer. The refractory metals for the barrier layer include tungsten, molybdenum, tantalum, niobium, or tungsten-chromium alloy. This multilayer metallization structure provides a robust interface between diamond and standard brazing alloys which are used to join the diamond to electrical leads or a flange made of metals such as copper-tungsten. The interfacial adhesion between the metallization and the diamond is sufficient to withstand exposure to brazing at temperatures less than or equal to 1,100° C. in inert gas atmospheres that may contain hydrogen.

摘要翻译： 描述了用于金刚石组件的多层可钎焊金属化结构及其制造方法。 可钎焊金属化特别适用于将金属部件如散热器安装在并入大功率半导体器件的电子封装中。 在本发明中，金刚石组件设置有金属的多层涂层，包括沉积第一层铬以粘附在至少一部分金刚石组件上，至少将至少一层阻挡层的难熔金属的第二阻挡层沉积 铬层的一部分，以及用于润湿的铜，银或金的顶层。 该顶层是厚的（大于5微米），而不会牺牲耐分层性，特别是在钎焊条件下。 通过在第一金属层的至少一部分上沉积第一金属层并在第一金属层的至少一部分上沉积第二金属层而获得。 用于阻挡层的难熔金属包括钨，钼，钽，铌或钨 - 铬合金。 这种多层金属化结构提供了金刚石和标准钎焊合金之间的牢固界面，这些钎焊合金用于将金刚石连接到电引线或由诸如铜 - 钨的金属制成的凸缘。 金属化和金刚石之间的界面粘合足以在低于或等于1100℃的温度下耐受暴露于可能含有氢的惰性气体气氛中的钎焊。

公开(公告)号：US06790476B1

公开(公告)日：2004-09-14

申请号：US10154224

申请日：2002-05-21

申请人： Dwight R. Jennison ,  Alexander Bogicevic ,  Jeffry A. Kelber ,  Scott A. Chambers

发明人： Dwight R. Jennison ,  Alexander Bogicevic ,  Jeffry A. Kelber ,  Scott A. Chambers

IPC分类号： C23C1606

CPC分类号： C23C14/185 ,  C23C14/024

摘要： A method of controlling the wetting characteristics and increasing the adhesion between a metal and an oxide layer. By introducing a negatively-charged species to the surface of an oxide layer, layer-by-layer growth of metal deposited onto the oxide surface is promoted, increasing the adhesion strength of the metal-oxide interface. The negatively-charged species can either be deposited onto the oxide surface or a compound can be deposited that dissociates on, or reacts with, the surface to form the negatively-charged species. The deposited metal adatoms can thereby bond laterally to the negatively-charged species as well as vertically to the oxide surface as well as react with the negatively charged species, be oxidized, and incorporated on or into the surface of the oxide.

摘要翻译： 控制润湿特性并增加金属和氧化物层之间的粘附性的方法。 通过向氧化物层的表面引入带负电荷的物质，促进沉积在氧化物表面上的金属逐层生长，增加金属氧化物界面的粘合强度。 带负电荷的物质可以沉积在氧化物表面上，或者可以沉积化合物，其与表面分离或与表面反应以形成带负电荷的物质。 沉积的金属吸附原子因此可以侧向地连接到带负电的物质以及垂直于氧化物表面，并且与带负电的物质反应，被氧化并且结合到氧化物的表面上或其中。

公开(公告)号：US06689199B2

公开(公告)日：2004-02-10

申请号：US10272236

申请日：2002-10-16

申请人： Reed Roeder Corderman ,  Melvin Robert Jackson ,  Richard Arthur Nardi, Jr.

发明人： Reed Roeder Corderman ,  Melvin Robert Jackson ,  Richard Arthur Nardi, Jr.

IPC分类号： C23C1606

CPC分类号： C23C14/30 ,  C23C14/16 ,  Y02T50/67

摘要： A method of introducing small amounts of a refractory element into a vapor deposition coating. A second material (30), containing at least two elements which are desired to be deposited as a coating on a base material, has placed over it a first material (20) substantially comprising such two elements and a refractory element. The first material (20) is adapted to permit transport of the at least two elements in the second material (30) through the first material (20) when the first (20) and second (30) material are in a molten state and in touching contact with the other so as to permit evaporation of the two elements and the refractory element from an exposed surface. Heat is supplied to the first (20) and second (30) materials to permit evaporation of the at least two elements of second material (30) and the refractory element in the first material (20), and the resulting vapors are condensed as a deposit on a base material (50). A particular method of heating is further disclosed to assist in maintaining adequate rates of evaporation for the aforesaid method, wherein the supplied heat is supplied to an inner heated area (91) and a surrounding outer heated area (92) and at least a portion of the inner heated area (91) is heated to a greater temperature than the outer heated area (92).

摘要翻译： 将少量耐火材料引入气相沉积涂层的方法。 包含至少两个期望作为涂层涂覆在基材上的元件的第二材料（30）已经在其上放置了基本上包含这两个元件和难熔元件的第一材料（20）。 当第一（20）和第二（30）材料处于熔融状态时，第一材料（20）适于允许第二材料（30）中的至少两个元件通过第一材料（20） 与另一个接触，以允许两个元件和耐火元件从暴露的表面蒸发。 将热量供应到第一（20）和第二（30）材料以允许第一材料（20）中的第二材料（30）的至少两个元件和耐火元件蒸发，并且所得到的蒸气被冷凝为 沉积在基材（50）上。 进一步公开了一种特定的加热方法，以有助于为上述方法保持足够的蒸发速率，其中供应的热量被供应到内部加热区域（91）和周围的外部加热区域（92）和至少一部分 内加热区域（91）被加热到比外部加热区域（92）更高的温度。

公开(公告)号：US06602550B1

公开(公告)日：2003-08-05

申请号：US09963907

申请日：2001-09-26

申请人： Harley A. Grant ,  Jerry Paul Stewart

发明人： Harley A. Grant ,  Jerry Paul Stewart

IPC分类号： C23C1606

CPC分类号： C23C10/04 ,  C23C10/34

摘要： A method for treating a portion of a metal component by diffusion alloying includes providing a container having at least one open end. The container has a width that is greater than the width of the portion of the metal component to be treated, a thickness that is greater than the thickness of the portion of the metal component to be treated, and a depth that is greater than the length of the portion of the metal component to be treated. According to the method, the portion of the metal component to be treated is placed in the container. A heat-activated alloying powder is placed in the container around the portion of the component to be treated in a layer that extends along the length of the portion of the component to be treated. A non-oxidizing powder is placed in the container adjacent to the alloying powder and around the metal component in a layer that extends to an open end of the container. A cap is provided for each open end of the container to seal the container around the metal component except for gases which are produced in diffusion alloying. A furnace is provided to heat the portion of the metal component to be treated to activate the alloying powder. The container is placed with the portion of the metal component to be treated therein in the furnace, and the furnace is operated to heat the portion of the metal component in the container to a temperature and for a time sufficient to cause diffusion alloying of the portion of the metal component to be treated by the alloying powder.

摘要翻译： 通过扩散合金化处理金属部件的一部分的方法包括提供具有至少一个开口端的容器。 容器的宽度大于被处理金属部件的宽度，其厚度大于被处理金属部件的厚度，并且深度大于长度 的待处理金属组分的部分。 根据该方法，将待处理的金属成分的一部分放置在容器中。 将热活化的合金粉末沿着待处理组分的部分长度延伸的层中围绕待处理组分的部分放置在容器中。 将非氧化性粉末放置在与合金粉末相邻的容器中并且在延伸到容器的开口端的层中的金属部件周围。 为容器的每个开口端设置一个盖子，以围绕金属部件密封容器，除了以扩散合金化产生的气体之外。 提供炉以加热要处理的金属成分的部分以活化合金粉末。 将容器放置在炉中待处理的金属部件的一部分，并且操作炉子以将容器中的金属部件的一部分加热到足以使部分的金属部分扩散合金化的温度 的待合金粉末处理的金属成分。