Folded memory modules
    362.
    发明授权
    Folded memory modules 有权
    折叠内存模块

    公开(公告)号:US09489323B2

    公开(公告)日:2016-11-08

    申请号:US14182986

    申请日:2014-02-18

    Applicant: Rambus Inc.

    Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.

    Abstract translation: 存储器模块包括数据接口,该数据接口包括多个数据线和耦合在数据接口和到一个或多个存储器的数据路径之间的多个可配置开关。 可以通过启用或禁用可配置开关的不同子集来配置内存模块的有效宽度。 可配置开关可以由手动开关,存储器模块上的缓冲器,外部存储器控制器或存储器模块上的存储器来控制。

    Pixel structure and reset scheme
    364.
    发明授权
    Pixel structure and reset scheme 有权
    像素结构和复位方案

    公开(公告)号:US09438826B2

    公开(公告)日:2016-09-06

    申请号:US14135014

    申请日:2013-12-19

    Applicant: Rambus Inc.

    CPC classification number: H04N5/335 H04N5/347 H04N5/3575 H04N5/37457 H04N5/378

    Abstract: An image sensor that includes a pixel array with image pixels with conditional reset circuitry. The pixels can be reset by a combination of row select and column reset signals, which implements the reset function while minimizing the number of extra signal lines. The pixels may also include pinned photodiodes. The manner in which the pinned photodiodes are used reduces noise and allows the quantization of the pixel circuits to be programmable.

    Abstract translation: 一种图像传感器,其包括具有条件复位电路的图像像素的像素阵列。 可以通过行选择和列复位信号的组合来复位像素,其实现复位功能,同时最小化额外信号线的数量。 像素还可以包括固定的光电二极管。 使用钉扎光电二极管的方式降低了噪声,并允许像素电路的量化是可编程的。

    Distributed cascode current source for RRAM set current limitation
    365.
    发明授权
    Distributed cascode current source for RRAM set current limitation 有权
    用于RRAM的分布式共源共栅电流源设置电流限制

    公开(公告)号:US09437291B2

    公开(公告)日:2016-09-06

    申请号:US14605866

    申请日:2015-01-26

    Applicant: Rambus Inc.

    CPC classification number: G11C13/0038 G11C5/06 G11C13/003

    Abstract: In one example, a current limited device is coupled between a source line of a memory cell array and a supply voltage, and configured to operate in a constant current mode during an access operation of a memory cell. An array control circuitry may be coupled to the memory cell array, and configured to control the constant current mode and supply an associated select bias voltage to the word line select transistor.

    Abstract translation: 在一个示例中,电流限制器件耦合在存储器单元阵列的源极线和电源电压之间,并且被配置为在存储器单元的访问操作期间以恒定电流模式操作。 阵列控制电路可以耦合到存储单元阵列,并被配置为控制恒流模式并将相关的选择偏置电压提供给字线选择晶体管。

    Memory controller with clock-to-strobe skew compensation
    366.
    发明授权
    Memory controller with clock-to-strobe skew compensation 有权
    具有时钟到频闪偏移补偿的存储控制器

    公开(公告)号:US09437279B2

    公开(公告)日:2016-09-06

    申请号:US14951190

    申请日:2015-11-24

    Applicant: Rambus Inc.

    Abstract: A clock signal is transmitted to first and second integrated circuit (IC) components via a clock signal line, the clock signal having a first arrival time at the first IC component and a second, later arrival time at the second IC component. A write command is transmitted to the first and second IC components to be sampled by those components at respective times corresponding to transitions of the clock signal, and write data is transmitted to the first and second IC components in association with the write command. First and second strobe signals are transmitted to the first and second IC components, respectively, to time reception of the first and second write data in those components. The first and second strobe signals are selected from a plurality of phase-offset timing signals to compensate for respective timing skews between the clock signal and the first and second strobe signals.

    Abstract translation: 时钟信号通过时钟信号线发送到第一和第二集成电路(IC)组件,该时钟信号在第一IC组件处具有第一到达时间,而在第二IC组件处具有第二较晚的到达时间。 在对应于时钟信号的转变的各个时刻,写入命令被发送到要被这些分量采样的第一和第二IC组件,并且与写命令相关联地将写数据发送到第一和第二IC组件。 第一和第二选通信号分别被发送到第一和第二IC组件,以便在这些组件中对第一和第二写入数据进行时间接收。 从多个相位偏移定时信号中选择第一和第二选通信号,以补偿时钟信号与第一和第二选通信号之间的各自的定时偏差。

    MEMORY COMPONENT HAVING INTERNAL READ MODIFY-WRITE OPERATION
    369.
    发明申请
    MEMORY COMPONENT HAVING INTERNAL READ MODIFY-WRITE OPERATION 有权
    具有内部读取修改操作的存储组件

    公开(公告)号:US20160231962A1

    公开(公告)日:2016-08-11

    申请号:US15022176

    申请日:2014-09-23

    Applicant: RAMBUS INC.

    Abstract: An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.

    Abstract translation: 存储器组件包括存储器组和用于接收读取 - 修改 - 写入命令的命令接口,其具有指示存储器组中的位置的相关联的读取地址,以及从读取的指示的存储器组中的位置访问读取数据 从接收到读 - 修改 - 写入命令的时间开始,或者与多个读 - 修改 - 写入命令重叠,可调节延迟时间之后的地址。 存储器组件还包括用于接收与读取 - 修改 - 写入命令相关联的写入数据的数据接口和用于将接收到的写入数据与读取的数据合并以形成合并数据的纠错电路,并将合并的数据写入到 由读取地址指示的存储体。

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