Process for the Collective Fabrication of 3D Electronic Modules
    33.
    发明申请
    Process for the Collective Fabrication of 3D Electronic Modules 有权
    集成制作3D电子模块的过程

    公开(公告)号:US20080289174A1

    公开(公告)日:2008-11-27

    申请号:US12158125

    申请日:2006-12-19

    Applicant: Christian Val

    Inventor: Christian Val

    Abstract: The invention relates to the collective fabrication of n 3D modules. It comprises a step of fabricating a batch of n wafers I on one and the same plate, this step being repeated K times, then a step of stacking the K plates, a step of forming plated-through holes in the thickness of the stack, these holes being intended for connecting the slices together, and then a step of cutting the stack in order to obtain the n 3D modules.The plate 10, which comprises silicon, is covered on one face 11 with an electrically insulating layer forming the insulating substrate. This face has grooves 20 that define n geometrical features, which are provided with an electronic component 1 connected to electrical connection pads 2′ placed on said face.After the stacking operation, holes are drilled perpendicular to the faces of the plates vertically in line with the grooves. The size of the holes is smaller than that of the grooves so that the silicon of each wafer 10 is isolated from the wall of the hole by resin.

    Abstract translation: 本发明涉及n个3D模块的集体制作。 它包括在同一板上制造一批n个晶片I的步骤,该步骤重复K次,然后是堆叠K板的步骤,形成厚度为叠层的电镀通孔的步骤, 这些孔旨在将切片连接在一起,然后切割堆叠以获得n个3D模块的步骤。 包含硅的板10被覆盖在一个表面11上,其中形成绝缘基板的电绝缘层。 该面具有限定n个几何特征的槽20,其具有连接到放置在所述面上的电连接焊盘2'的电子部件1。 在堆叠操作之后,垂直于板的表面垂直钻孔,与槽一致。 孔的尺寸小于槽的尺寸,使得每个晶片10的硅通过树脂与孔的壁隔离。

    Process for the collective fabrication of 3D electronic modules
    39.
    发明授权
    Process for the collective fabrication of 3D electronic modules 有权
    三维电子模块集体制作的过程

    公开(公告)号:US07877874B2

    公开(公告)日:2011-02-01

    申请号:US12158125

    申请日:2006-12-19

    Applicant: Christian Val

    Inventor: Christian Val

    Abstract: The invention relates to the collective fabrication of n 3D modules. A batch of n wafers I are fabricated on one and the same plate. This step is repeated K times. The K plates are stacked. Plated-through holes are formed in the thickness of the stack. These holes are intended for connecting the slices together. The stack is cut in order to obtain the n 3D modules. The plate 10, which comprises silicon, is covered on one face 11 with an electrically insulating layer forming the insulating substrate. This face has grooves 20 that define n geometrical features, which are provided with an electronic component 1 connected to electrical connection pads 2′ placed on said face.

    Abstract translation: 本发明涉及n个3D模块的集体制作。 一批n个晶片I被制造在同一个板上。 这一步重复K次。 K盘堆放。 电镀通孔形成在堆叠的厚度上。 这些孔用于将切片连接在一起。 切割堆叠以获得n个3D模块。 包含硅的板10被覆盖在一个表面11上,其中形成绝缘基板的电绝缘层。 该面具有限定n个几何特征的槽20,其具有连接到放置在所述面上的电连接焊盘2'的电子部件1。

Patent Agency Ranking