Abstract:
A method for collectively fabricating a reconstituted wafer comprising chips exhibiting connection pads on a front face of the chip, comprises: positioning the chips on an initial adhesive support, front face on the support, vapor deposition at atmospheric pressure and ambient temperature, of an electrically insulating layer on the initial support and the chips, having a mechanical role of holding the chips, transfer of the chips covered with the mineral layer onto a provisional adhesive support, rear face of the chips toward this provisional adhesive support, removal of the initial adhesive support, overlaying the chips onto a support of “chuck” type, front faces of the chips toward this support, removal of the provisional adhesive support, deposition of a resin on the support of “chuck” type to encapsulate the chips, and then polymerization of the resin, removal of the support of “chuck” type, production of an RDL layer active face side.
Abstract:
The invention relates to a method of interconnecting electronic components of a first wafer (T1) with electronic components of a second wafer (T2), each wafer having metallized vias (1) which pass through the wafer in the thickness direction. The method includes deposition of a drop (3) of conductive ink containing solvents on each via (1) of the first wafer (T1); stacking of the second wafer (T2) on the first so that the vias (1) of the second wafer (T2) are substantially superposed on the vias (1) of the first wafer (T1); removal of 50 to 90% of the solvents contained in the drops (3) by heating or applying a vacuum, so as to obtain a pasty ink; and laser sintering of the pasty ink drops (3) so as to produce electrical connections (31) between the superposed metallized vias (1).
Abstract:
The invention relates to the collective fabrication of n 3D module. It comprises a step of fabricating a batch of n dies i at one and the same thin plane wafer (10) of thickness es comprising silicon, covered on one face with electrical connection pads (20), called test pads, and then with a thin electrically insulating layer (4) of thickness ei, forming the insulating substrate provided with at least one silicon electronic component (11) having connection pads (2) connected to the test pads (20) through the insulating layer. The components are encapsulated in an insulating resin (6) of thickness er, filling the spaces between the components, then separated from one another by first grooves (30) with a width L1 and a depth P1 such that ei+er
Abstract:
According to an embodiment of the invention the discrete or integrated electronic components are encapsulated, each in a package, for example a plastic one; the packages are then mounted on a printed circuit board, for example an epoxy one. The components and board as a whole are covered with a relatively thick first layer consisting of an organic compound and ensuring a levelling function, followed by a second layer such as an inorganic metal compound, the function of which is to ensure the hermetic sealing of the whole.
Abstract:
Disclosed is a 3D encapsulation of semiconductor chips, each chip containing for example an integrated circuit, this encapsulation being aimed at optimising heat dissipation by conduction. Connection means are associated with each chip, making it possible to extend the pads of chips towards three sides of the chip, thus leaving the fourth side free. The chips are stacked on one another and then can be connected to heat dissipation means by their fourth side.
Abstract:
A hermetically sealed encapsulation package for electronic components and integrated or hybrid electronic circuits has a base on which the component or circuit is mounted in the conventional manner and a cover. In one embodiment, the base includes a layer of a material which is able to retain any water molecules which might remain within the package after sealing or which may result from in-leakage from the surrounding atmosphere.
Abstract:
An encapsulating case or box for hybrid circuits, able to operate in highly pressurized atmosphere, the components of the hybrid circuit being not subject to the action of pressure. For this purpose, said circuit is enclosed in a case taking the plane of the hybrid circuit substrate as the plane of symmetry, two half-shells made from an electrically insulating rigid material being arranged in symmetrical manner on the two faces of the substrate for creating a zero deformation area within the case. The electrical connections between the hybrid circuit and the connecting pins, outside the case and supported by the substrate are provided by flat metal conductors passing in the gluing plane to the substrate of a half-shell.
Abstract:
A step adjustable attenuator comprising a silicon substrate on one face of which are deposited thin film-type resistors and electrical conductors by which the resistors are interconnected. Contact points are arranged at the periphery of the substrate and connected to the resistors. However, the attenuating sections are not interconnected on the substrate. A conductive pattern prepared from a conductive film forms finger-like leads of which inner portions are bonded to the contact points. By its shape, the pattern ensures the interconnections between the sections and forms two rows of outputs, one for the connections on the printed-circuit board on which is implanted the attenuator and the other being associated with displaceable straps enabling attenuation to be adjusted.
Abstract:
A process for the vertical interconnection of 3D electronic modules (100), a module comprising a stack of K electronic wafer levels (19) electrically connected together by conductors lying along the direction of the stack that is perpendicular to the plane of a wafer.
Abstract:
The invention relates to an electronic module comprising a stack of n packages of predetermined thickness E, which are provided on a lower surface with connection balls of predetermined thickness eb, said connection balls being connected to a printed circuit for interconnecting the package. The printed circuit is placed on the lower surface of the package level with the balls, is drilled with metallized holes, in which the balls are located and to which they are connected, and has a thickness eci less than eb so as to obtain a module with a total thickness not exceeding n (E+10% eb).