公开(公告)号：US08030109B2

公开(公告)日：2011-10-04

申请号：US12540609

申请日：2009-08-13

申请人： Yasuo Sato ,  Jugo Mitomo ,  Mikihiro Yokozeki ,  Tomonori Hino ,  Hironobu Narui

发明人： Yasuo Sato ,  Jugo Mitomo ,  Mikihiro Yokozeki ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/3235 ,  H01S5/343

摘要： A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm−3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.

摘要翻译： 能够实现长寿命的半导体发光元件及其制造方法。 活性层中的氢的杂质浓度为3×10 19 cm -3以下，活性层中的铝的杂质浓度为1×1018cm -3以下。 由此，能够抑制工作电流的增加，能够实现长寿命化。

公开(公告)号：US07858418B2

公开(公告)日：2010-12-28

申请号：US11873763

申请日：2007-10-17

申请人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Yuichiro Kikuchi ,  Tatsuo Ohashi

发明人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Yuichiro Kikuchi ,  Tatsuo Ohashi

IPC分类号： H01L21/00

CPC分类号： H01L33/44 ,  H01L33/38

摘要： Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

摘要翻译： 本文公开了一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第二导电类型不同的第二化合物半导体层 第一导电类型，在基板上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤 （B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。

公开(公告)号：US20080283846A1

公开(公告)日：2008-11-20

申请号：US12121906

申请日：2008-05-16

申请人： Akira Ohmae ,  Masayuki Arimochi ,  Jugo Mitomo ,  Noriyuki Futagawa ,  Tomonori Hino

发明人： Akira Ohmae ,  Masayuki Arimochi ,  Jugo Mitomo ,  Noriyuki Futagawa ,  Tomonori Hino

IPC分类号： H01L33/00 ,  C30B25/18

CPC分类号： H01L33/16 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L2224/48465

摘要： Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure.

摘要翻译： 本文公开了一种用于生长半导体层的方法，其包括在衬底的（1-100）平面上生长具有（11-22）或（10-13）面方向的六方晶体结构的半导体层的步骤 六方晶体结构。

公开(公告)号：US20080105885A1

公开(公告)日：2008-05-08

申请号：US11876909

申请日：2007-10-23

申请人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Tatsuo Ohashi

发明人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Tatsuo Ohashi

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L24/45 ,  H01L33/62 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.

摘要翻译： 发光器件包括第一化合物半导体层，有源层和第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 覆盖所述第二电极的绝缘层; 设置成穿过绝缘层，第二电极，第二化合物半导体层和有源层的第一开口; 设置成穿过绝缘层的第二开口; 形成在第一开口底部的第一化合物半导体层的露出部分上的第一电极; 通过所述第一开口从所述第一电极延伸到所述绝缘层的第一电极延伸部和包括所述绝缘层上的所述第一电极延伸部的一部分的第一焊盘部分; 以及第二焊盘部分，其连接到第二开口的底部处的第二电极的暴露部分。

公开(公告)号：US07332744B2

公开(公告)日：2008-02-19

申请号：US10983927

申请日：2004-11-08

申请人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

发明人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

IPC分类号： H01L27/15 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01S5/0021 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/14 ,  H01S2301/18

摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

摘要翻译： 提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。 电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。 通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为 优选为10nm〜1000nm。 氧化区域的一侧的宽度为非氧化区域的宽度的一倍以上或其以上的七倍以下。电流限制层与有源层之间的距离优选为50nm以上或500nm以下 以下，更优选为180nm以上。

公开(公告)号：US07135772B2

公开(公告)日：2006-11-14

申请号：US11090340

申请日：2005-03-25

申请人： Shigetaka Tomiya ,  Tomonori Hino

发明人： Shigetaka Tomiya ,  Tomonori Hino

IPC分类号： H01L29/06 ,  H01L23/48 ,  H01L23/52 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/1082 ,  H01S5/3072 ,  H01S5/3201 ,  H01S5/321 ,  H01S5/3213 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12 ,  Y10S438/962

摘要： The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which consequently enables a life to be prolonged. In the nitride compound semiconductor laser, a stress concentration suppression layer is formed between an active layer and a cap layer.

摘要翻译： 本发明是一种氮化物化合物半导体激光器，其中切割的端面是平坦的，并且可以抑制在操作期间引起的激光端面的击穿，从而能够延长寿命。 在氮化物化合物半导体激光器中，在有源层和盖层之间形成应力集中抑制层。

公开(公告)号：US07026183B2

公开(公告)日：2006-04-11

申请号：US10917900

申请日：2004-08-13

申请人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

发明人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34306 ,  H01S5/34366 ,  Y10S438/935

摘要： For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.

摘要翻译： 为了制造具有优异特性和长寿命的长波长半导体发光器件，在层的生长期间中断III族元素的源材料的供给时，与As的源材料一起提供高反应性气体 （GaAs光导层）在活性层前面或刚好在活性层生长之前。 高反应性气体可以是例如二甲基肼或氨（NH 3）。

公开(公告)号：US20050167836A1

公开(公告)日：2005-08-04

申请号：US11090749

申请日：2005-03-24

申请人： Shigetaka Tomiya ,  Tomonori Hino

发明人： Shigetaka Tomiya ,  Tomonori Hino

IPC分类号： H01S5/042 ,  H01S5/10 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01L29/22

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/1082 ,  H01S5/3072 ,  H01S5/3201 ,  H01S5/321 ,  H01S5/3213 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12 ,  Y10S438/962

摘要： The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which consequently enables a life to be prolonged. In the nitride compound semiconductor laser, a stress concentration suppression layer is formed between an active layer and a cap layer.

摘要翻译： 本发明是一种氮化物化合物半导体激光器，其中切割的端面是平坦的，并且可以抑制在操作期间引起的激光端面的击穿，从而能够延长寿命。 在氮化物化合物半导体激光器中，在有源层和盖层之间形成应力集中抑制层。

公开(公告)号：US6036772A

公开(公告)日：2000-03-14

申请号：US999446

申请日：1997-12-29

申请人： Tomonori Hino ,  Satoshi Taniguchi ,  Satoshi Ito

发明人： Tomonori Hino ,  Satoshi Taniguchi ,  Satoshi Ito

IPC分类号： H01L21/363 ,  C30B25/18

CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02502 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  Y10S438/925 ,  Y10S438/944

摘要： A method for making a semiconductor device comprises: depositing at least one Group II-VI compound semiconductor layer comprising at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium onto a Group III-V compound semiconductor layer comprising at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium and at least one Group V element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth; whereinbefore depositing the Group II-VI compound semiconductor layer, a particle beam composed of at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium and mercury is radiated onto the Group III-V compound semiconductor layer in a dose of 8.times.10.sup.-4 Torr.multidot.sec or more.

摘要翻译： 一种制造半导体器件的方法包括：沉积至少一种包含至少一种选自锌，镁，锰，铍，镉和汞的II族元素的II-VI族化合物半导体层和至少一种VI族 选自氧，硫，硒和碲的元素至III-V族化合物半导体层，该III-V族化合物半导体层包含至少一种选自镓，铝，硼和铟的III族元素和至少一种V族元素 选自氮，磷，砷，锑和铋; 其中在沉积II-VI族化合物半导体层之前，将由选自锌，镁，铍，镉和汞的至少一种II族元素组成的粒子束辐射到III-V族化合物半导体层上 剂量为8x10-4 Torrxsec或更高。

公开(公告)号：US6031244A

公开(公告)日：2000-02-29

申请号：US987105

申请日：1997-12-08

申请人： Hiroyasu Noguchi ,  Kazushi Nakano ,  Akira Ishibashi ,  Atsushi Toda ,  Satoshi Taniguchi ,  Tomonori Hino ,  Eisaku Kato

发明人： Hiroyasu Noguchi ,  Kazushi Nakano ,  Akira Ishibashi ,  Atsushi Toda ,  Satoshi Taniguchi ,  Tomonori Hino ,  Eisaku Kato

IPC分类号： H01L33/28 ,  H01L33/00

CPC分类号： H01L33/28

摘要： A luminescent semiconductor device comprises: an active layer composed of a Group II-VI semiconductor device which comprises at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium, manganese and mercury, and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium. the Group II-VI compound semiconductor forming said active layer contains at least one element selected from the group consisting of magnesium, beryllium and cadmium as the Group II element and tellurium as the Group VI element. At least one antidiffusion layer preventing diffusion of these elements from the active layer is provided on at least one surface of the active layer.

摘要翻译： 发光半导体器件包括：由II-VI族半导体器件组成的有源层，其包含选自锌，镁，铍，镉，锰和汞中的至少一种II族元素，以及至少一种VI族 元素选自氧，硫，硒和碲。 形成所述活性层的II-VI族化合物半导体含有选自镁，铍和镉中的至少一种元素作为第II族元素，碲作为VI族元素。 至少一个防扩散层防止这些元件从活性层扩散到活性层的至少一个表面上。