公开(公告)号：US08669925B2

公开(公告)日：2014-03-11

申请号：US13644366

申请日：2012-10-04

Applicant: Semiconductor Energy laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama

IPC: G09G3/32

CPC classification number: H01L27/156 ,  G09G3/32 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0408 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2300/0857 ,  H01L27/3244

Abstract: An inexpensive light emitting device capable of displaying a bright image and an electric appliance using the light emitting device. In the light emitting device having a pixel portion and a driver circuit formed on one insulating member, all of semiconductor elements for the pixel portion and the driver circuit are formed by n-channel semiconductor elements, thereby enabling the manufacturing process to be simplified. Each of light-emitting elements provided in the pixel portion emits light in such a direction that most of the light travels away from the insulating member, so that substantially the whole of the pixel-forming segment electrode (corresponding to a cathode of an EL element) is formed as an effective light-emitting area. Therefore, a low-priced light-emitting device capable of displaying a bright image can be obtained.

Abstract translation: 能够使用发光装置显示明亮图像的便宜的发光装置和电器。 在具有形成在一个绝缘构件上的像素部分和驱动电路的发光器件中，用于像素部分的所有半导体元件和驱动电路由n沟道半导体元件形成，从而能够简化制造工艺。 设置在像素部分中的每个发光元件沿着大部分光远离绝缘构件的方向发光，使得基本上整个像素形成段电极（对应于EL元件的阴极 ）形成为有效的发光区域。 因此，可以获得能够显示明亮图像的低价位发光装置。

公开(公告)号：US20130277895A1

公开(公告)日：2013-10-24

申请号：US13922323

申请日：2013-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

IPC: B29C31/00

CPC classification number: H01J37/3429 ,  B29C31/008 ,  C04B35/01 ,  C04B35/453 ,  C04B35/645 ,  C04B35/6455 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/80 ,  C04B2111/00844 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/658 ,  C04B2235/662 ,  C04B2235/666 ,  C04B2235/77 ,  C23C14/10 ,  C23C14/3414 ,  C23C14/564 ,  H01J2237/332 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  C04B35/04 ,  C04B35/10 ,  C04B35/457 ,  C04B41/4517 ,  C04B41/53

Abstract: One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

公开(公告)号：US20130161623A1

公开(公告)日：2013-06-27

申请号：US13775526

申请日：2013-02-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

IPC: H01L27/15

CPC classification number: H01L51/0024 ,  G02F1/13306 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2001/13456 ,  G02F2202/28 ,  H01L21/2007 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67236 ,  H01L21/6835 ,  H01L21/76251 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/1274 ,  H01L27/15 ,  H01L27/3248 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/78675 ,  H01L51/003 ,  H01L51/5012 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06586 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/308 ,  H01L2251/5323 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01055 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: The present invention intends to realize a narrow flame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique.

Abstract translation: 本发明意图实现面板上系统的窄火焰。 除此之外，安装在面板上的系统旨在使功能更高更通用。 在本发明中，在形成有像素部（包括液晶元件，发光元件）和驱动电路的面板上，层叠形成了构成外部电路的集成电路。 具体地，在面板上的像素部分和驱动电路中，在与驱动电路重叠的位置上，根据转录技术层叠形成任何一种或多种集成电路。

公开(公告)号：US11196020B2

公开(公告)日：2021-12-07

申请号：US16914735

申请日：2020-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC: H01L51/52 ,  H01L27/12 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786 ,  H01L51/00

Abstract: To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.

公开(公告)号：US10527903B2

公开(公告)日：2020-01-07

申请号：US16192844

申请日：2018-11-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Satoshi Murakami ,  Hajime Kimura

IPC: H01L27/32 ,  G02F1/1368 ,  H01L51/52 ,  H05B33/04 ,  G02F1/1333 ,  G02F1/1362

Abstract: A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

公开(公告)号：US10516010B2

公开(公告)日：2019-12-24

申请号：US14333078

申请日：2014-07-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC: H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H01L29/16 ,  H01L27/12 ,  H01L51/50 ,  H01L51/56 ,  H01L51/52

Abstract: The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride.

公开(公告)号：US09847355B2

公开(公告)日：2017-12-19

申请号：US14515770

申请日：2014-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC: H01L29/04 ,  H01L31/036 ,  H01L27/12 ,  B32B17/04 ,  B32B17/06 ,  C23C14/06 ,  C23C14/58 ,  H01L27/32 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L27/13

CPC classification number: H01L21/0217 ,  B32B17/04 ,  B32B17/06 ,  C23C14/0652 ,  C23C14/5846 ,  H01L21/02266 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3297 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

Abstract: An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.

公开(公告)号：US09679918B2

公开(公告)日：2017-06-13

申请号：US14515770

申请日：2014-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC: H01L29/04 ,  H01L31/036 ,  H01L27/12 ,  H01L27/32 ,  B32B17/04 ,  B32B17/06 ,  C23C14/06 ,  C23C14/58 ,  H01L21/314 ,  H01L21/318 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/51 ,  H01L27/13

Abstract: An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.

公开(公告)号：US09543337B2

公开(公告)日：2017-01-10

申请号：US14961043

申请日：2015-12-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junya Maruyama ,  Toru Takayama ,  Yumiko Ohno ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1218 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1266 ,  H01L29/78603 ,  H01L33/24 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2221/68368

Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

Abstract translation: 在基板上形成金属膜的状态下，通过物理手段或机械装置分离基板和分层膜，以及包含包含金属的氧化物膜和包含硅的膜的分层，其形成在 提供金属膜。 具体地说，通过在金属膜上形成包含金属的氧化物层而获得的TFT; 通过热处理使氧化层结晶; 并且在氧化物层的一层或氧化物层的界面上形成分层。

公开(公告)号：US09337341B2

公开(公告)日：2016-05-10

申请号：US14656959

申请日：2015-03-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masakazu Murakami ,  Toru Takayama ,  Junya Maruyama

IPC: H01L27/28 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1333 ,  H01L21/20 ,  H01L21/67 ,  H01L21/683 ,  H01L21/762 ,  H01L27/12 ,  H01L27/15 ,  H01L27/32 ,  H01L29/66 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L27/1218 ,  G02F1/133305 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/1368 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1262 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/56 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y02E10/549

Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Abstract translation: 本发明的目的是提供一种用于制造半导体器件的方法，该半导体器件具有以曲率结合到基底材料上的剥离层。 特别地，本发明的目的是提供一种用于制造具有曲率的显示器的方法，更具体地说，提供一种发光器件，该发光器件具有键合到具有曲率的基底材料的OLED。 对原来具有曲率和弹性的支撑件施加外力，并且将支撑件结合到形成在基板上的剥离层。 然后，当基板被剥离时，支撑件通过恢复力返回到原始形状，并且剥离层也沿着支撑件的形状弯曲。 最后，原来具有曲率的转印体被粘合到剥离层上，然后完成具有所需曲率的装置。