公开(公告)号：US10573785B2

公开(公告)日：2020-02-25

申请号：US15838264

申请日：2017-12-11

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Se Hee Oh ,  Hyun A Kim

IPC: H01L33/38 ,  H01L29/40 ,  H01L33/44 ,  H01L33/40

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

公开(公告)号：US10270007B2

公开(公告)日：2019-04-23

申请号：US15867148

申请日：2018-01-10

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jae Kwon Kim ,  Ho Seob Noh ,  Jong Kyu Kim ,  Min Woo Kang ,  Hyun A Kim

IPC: H01L33/38 ,  H01L33/24 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62 ,  H01L33/00 ,  H01L33/06 ,  F21S45/48 ,  G02F1/1335 ,  F21V8/00 ,  F21S41/141 ,  F21Y115/10 ,  F21S45/43

Abstract: A light emitting diode having improved light efficiency and enhanced reflectivity of a device by forming an insulating reflective part on a reflective electrode formed on the upper surface of a mesa. A mesa exposing part is formed on the outer periphery and/or in the interior region of the reflective electrode to expose a predetermined area of the upper surface of the mesa such that reflection at the mesa exposing part is performed by the insulating reflective part.

公开(公告)号：US10217912B2

公开(公告)日：2019-02-26

申请号：US15823325

申请日：2017-11-27

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim ,  Kyoung Wan Kim ,  Chang Yeon Kim

IPC: H01L33/50 ,  H01L33/40 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/46 ,  H01L33/32

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

公开(公告)号：US20180269354A1

公开(公告)日：2018-09-20

申请号：US15921587

申请日：2018-03-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee Oh ,  Jong Kyu Kim ,  Hyun A Kim

IPC: H01L33/08 ,  H01L33/50 ,  H01L33/60 ,  H01L33/64

Abstract: A light emitting diode includes a first light emitting region and a second light emitting region each comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, an ohmic reflective layer disposed on the second conductivity type semiconductor layer of each of the first and second light emitting regions, and a first pad metal layer separated from the ohmic reflective layer and electrically connected to the first conductivity type semiconductor layer of each of the first and second light emitting regions, wherein the second light emitting region surrounds the first light emitting region.

公开(公告)号：US09991425B2

公开(公告)日：2018-06-05

申请号：US15422575

申请日：2017-02-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Chung Hoon Lee ,  Daewoong Suh ,  Jong Min Jang ,  Joon Sup Lee ,  Won Young Roh ,  Min Woo Kang ,  Hyun A Kim ,  Seon Min Bae

IPC: H01L27/15 ,  H01L31/12 ,  H01L33/00 ,  H01L33/44 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/44 ,  H01L27/153 ,  H01L33/005 ,  H01L33/007 ,  H01L33/08 ,  H01L33/20 ,  H01L33/387 ,  H01L33/405 ,  H01L2933/0025

Abstract: A light emitting device including a light emitting structure disposed on one surface of a substrate and a transflective portion disposed on the other surface of the substrate. The transflective portion and the substrate have different indexes of refraction from one another.

公开(公告)号：US20170352786A1

公开(公告)日：2017-12-07

申请号：US15685888

申请日：2017-08-24

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim

IPC: H01L33/40 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/62 ,  H01L33/60 ,  H01L33/48 ,  H01L33/46 ,  H01L33/38 ,  H01L33/44 ,  H01L33/20

CPC classification number: H01L33/405 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A light emitting diode (LED) includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a first conductive layer disposed on a portion of the second semiconductor layer, a second conductive layer disposed on the second semiconductor layer, and an insulation layer including a first insulating layer and a second insulating layer disposed on the first insulating layer, and overlapping the first semiconductor layer, the second semiconductor layer, and the second conductive layer, in which the insulation layer has a first region having different thicknesses and a second region having a substantially constant thickness.

公开(公告)号：US09831401B2

公开(公告)日：2017-11-28

申请号：US15377731

申请日：2016-12-13

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim ,  Kyoung Wan Kim ,  Chang Yeon Kim

IPC: H01L33/50 ,  H01L33/62

CPC classification number: H01L33/508 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

公开(公告)号：US09711354B2

公开(公告)日：2017-07-18

申请号：US14578199

申请日：2014-12-19

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Min Jang ,  Hee Sub Lee ,  Won Young Roh ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Hyun A Kim ,  Seon Min Bae

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  H01L21/02 ,  H01L33/00 ,  C30B25/18 ,  H01L33/22

CPC classification number: H01L21/02647 ,  C30B25/18 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/0265 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/22 ,  Y10T117/10

Abstract: A template for growing a semiconductor, a method of separating a growth substrate and a method of fabricating a light emitting device using the same are disclosed. The template for growing a semiconductor includes a growth substrate including a nitride substrate; a seed layer disposed on the growth substrate and including at least one trench; and a growth stop layer disposed on a bottom surface of the trench, wherein the trench includes an upper trench and a lower trench, and the upper trench has a smaller width than the lower trench.

公开(公告)号：US20170084790A1

公开(公告)日：2017-03-23

申请号：US15367464

申请日：2016-12-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim

IPC: H01L33/40 ,  H01L33/20 ,  H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/62 ,  H01L33/44 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A light emitting diode (LED) includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first semiconductor layer, a second semiconductor layer disposed on the active layer, a first conductive layer disposed on a portion of the first semiconductor layer, a second conductive layer disposed on the second semiconductor layer, and an insulating layer overlapping the first semiconductor layer, the second semiconductor layer, and the reflection pattern, in which the insulating layer has a first region having different thicknesses and a second region having a substantially constant thickness.

公开(公告)号：US09548425B2

公开(公告)日：2017-01-17

申请号：US14745284

申请日：2015-06-19

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Daewoong Suh

IPC: H01L33/44 ,  H01L33/24 ,  H01L25/075 ,  H01L33/38 ,  H01L23/00 ,  H01L33/20 ,  H01L27/15 ,  H01L33/40 ,  H01L33/54 ,  H01L33/62 ,  H01L33/10 ,  H01L33/14 ,  H01L33/08

CPC classification number: H01L33/44 ,  H01L24/24 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/405 ,  H01L33/54 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/00

Abstract: A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided.

Abstract translation: 提供了一种发光二极管，其包括：具有第一表面，第二表面和侧表面的透明基板; 位于透明基板的第一表面上的第一导电半导体层; 位于所述第一导电半导体层上的第二导电半导体层; 位于所述第一导电半导体层和所述第二导电半导体层之间的有源层; 电连接到第一导电半导体层的第一焊盘; 以及电连接到所述第二导电半导体层的第二焊盘，其中所述透明基板被配置为通过所述透明基板的所述第二表面放电由所述有源层产生的光，并且所述发光二极管的光束角为至少140 度以上。 因此，可以提供适用于背光单元或表面照明装置的发光二极管。