摘要:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
摘要:
A light emitting device (100) includes a base member (101), electrically conductive members (102a, 102b) disposed on the base member (101), a light emitting element (104) mounted on the electrically conductive members (102a, 102b), an insulating filler (114) covering at least a portion of surfaces of the electrically conductive members (102a, 102b) where the light emitting element (104) is not mounted, and a light transmissive member (108) covering the light emitting element (104).
摘要:
To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2/3)X+(4/3)Y):R or LXMYOZN((2/3)X+(4/3)Y−(2/3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.
摘要:
A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.
摘要:
At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.
摘要:
A lighting apparatus which improves identification of living body tissues, and is suitable for medical lighting. In the lighting apparatus, the light output in a range of wavelength 525 to 590 nm is not greater than ⅕ of the light output in a range of wavelength 380 to 780 nm corresponding to visible light components. The peak wavelength of a blue or bluish green light component included in the output light is in a range of 430 to 520 nm, and the peak wavelength of a red light component is not less than 600 nm. A green light component has the peak in a range of wavelength 520 to 590 nm, its spectral half-value width is not greater than 70 nm, and the light amount of at least the green light component can be independently adjusted.
摘要:
To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2/3)X+(4/3)Y):R or LXMYOZN((2/3)X+(4/3)Y−(2/3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu); contains the another elements.
摘要:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
摘要:
The light distribution pattern for a vehicle having a predetermined horizontal cut-off line section at the top portion on one side of the vertical central line and an oblique cut-off line section whose central line side is lowered in another side. The light distribution pattern of the light source is formed by arranging a plurality of semiconductor light emitting devices with a configuration almost the same shape as the light distribution pattern for a vehicle. The semiconductor light emitting device has a luminance surface whose configuration is almost the same shape as the light distribution pattern for a vehicle. Further, the light source comprising the semiconductor light emitting device includes a fluorescent material whose excitation source is the emission from the nitride semiconductor device and a part of region of the fluorescent material emits light with higher luminance or higher color rendering properties compared with the other regions.
摘要:
The present invention provides a lighting apparatus which improves identification of living body tissues, and is suitable for medical lighting. In the lighting apparatus, the light output in a range of wavelength 525 to 590 nm is not greater than ⅕ of the light output in a range of wavelength 380 to 780 nm corresponding to visible light components. The peak wavelength of a blue or bluish green light component included in the output light is in a range 430 to 520 nm, and the peak wavelength of a red light component is not less than 600 nm. A green light component has the peak in a range of wavelength 520 to 590 nm, its spectral half-value width is not greater than 70 nm, and the light amount of at least the green light component can be independently adjusted.