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203 条记录 (耗时 0.034 秒)

    Thin film capacitor and fabrication method thereof
    33.
    发明授权
    Thin film capacitor and fabrication method thereof 有权
    薄膜电容器及其制造方法

    公开(公告)号：US07618859B2

    公开(公告)日：2009-11-17

    申请号：US12219577

    申请日：2008-07-24

    申请人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

    发明人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

    IPC分类号： H01L21/8242

    CPC分类号： H01L21/02197 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/02266 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31691 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55

    摘要： A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1

    摘要翻译： 一种薄膜电容器，包括保持在顶部和底部电极之间的顶部电极，底部电极和电介质膜。 电介质膜至少由阳离子Ba，Sr，Ti和阴离子O组成。Sr，Ti和O离子的浓度沿着电介质膜的生长方向是均匀的，而Ba阳离子的浓度是不均匀的 沿着生长方向，使得其中钙钛矿型Ba阳离子（Ba-I）的平均浓度小于非钙钛矿型Ba阳离子（Ba-II）的平均浓度的还原Ba-I区域存在于或接近 比例R =（atm％Ba-I）/ [（atm％Ba-I）+（atm％Ba-II）]在顶部和底部电极中的至少一个之间的边界在0.1

    Thin film capacitor and its manufacture method
    36.
    发明授权
    Thin film capacitor and its manufacture method 失效
    薄膜电容器及其制造方法

    公开(公告)号：US07326989B2

    公开(公告)日：2008-02-05

    申请号：US11066540

    申请日：2005-02-28

    申请人： Kazuaki Kurihara ,  Takeshi Shioga ,  John David Baniecki

    发明人： Kazuaki Kurihara ,  Takeshi Shioga ,  John David Baniecki

    IPC分类号： H01L29/94 ,  H01L21/44

    CPC分类号： H01G4/33 ,  H01L27/0629 ,  H01L27/0805 ,  H01L28/40

    摘要： A thin film capacitor is provided which includes a single crystal high dielectric constant dielectric layer. The thin film capacitor has a single crystal silicon substrate, a single crystal intermediate layer epitaxially grown on the single crystal silicon substrate, a single crystal lower electrode epitaxially grown on the single crystal intermediate layer, a single crystal high dielectric constant dielectric layer epitaxially grown on the lower electrode layer, an upper electrode layer formed above the single crystal high dielectric constant dielectric layer, and a plurality of conductor terminals connected to the lower electrode layer and upper electrode layer at a plurality of positions.

    摘要翻译： 提供了一种薄膜电容器，其包括单晶高介电常数介电层。 薄膜电容器具有单晶硅衬底，在单晶硅衬底上外延生长的单晶中间层，在单晶中间层外延生长的单晶下电极，外延生长在单晶硅介电层上的单晶高介电常数电介质层 下电极层，形成在单晶高介电常数介质层上的上电极层，以及在多个位置连接到下电极层和上电极层的多个导体端子。