公开(公告)号：US20160293798A1

公开(公告)日：2016-10-06

申请号：US15183594

申请日：2016-06-15

申请人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

发明人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC分类号： H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

公开(公告)号：US09062372B2

公开(公告)日：2015-06-23

申请号：US11933086

申请日：2007-10-31

申请人： Praburam Gopalraja ,  Jianming Fu ,  Xianmin Tang ,  John C. Forster ,  Umesh Kelkar

发明人： Praburam Gopalraja ,  Jianming Fu ,  Xianmin Tang ,  John C. Forster ,  Umesh Kelkar

IPC分类号： C23C14/35 ,  C23C14/34 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/345 ,  C23C14/35 ,  H01J37/32706 ,  H01J37/3408 ,  H01J37/3455

摘要： A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

公开(公告)号：US09017533B2

公开(公告)日：2015-04-28

申请号：US12173198

申请日：2008-07-15

申请人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianmin Tang ,  Rongjun Wang

发明人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianmin Tang ,  Rongjun Wang

IPC分类号： C23C14/34 ,  H01J37/32 ,  H01J37/34

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/34 ,  H01J37/3444

摘要： In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.

摘要翻译： 在物理气相沉积等离子体反应器中，多频阻抗控制器耦合在RF地与（a）偏置电极之一之间，（b）溅射靶，控制器在第一组频率处提供可调阻抗，所述第一 包括要阻止的第一组频率和要被接纳的第一组频率的频率集合。 第一多频阻抗控制器包括并联连接并被调谐到要被允许的所述第一组频率的一组带通滤波器，以及串联连接并被调谐到要被阻挡的所述第一组频率的一组陷波滤波器。

公开(公告)号：US20130285065A1

公开(公告)日：2013-10-31

申请号：US13868385

申请日：2013-04-23

申请人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

发明人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC分类号： H01L21/02 ,  H01L29/205

CPC分类号： H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

摘要翻译： 描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。 还描述了PVD AlN缓冲层的工艺条件。 还描述了PVD氮化铝缓冲层的基板预处理。 在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。 该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

公开(公告)号：US08133368B2

公开(公告)日：2012-03-13

申请号：US12263013

申请日：2008-10-31

申请人： Lara Hawrylchak ,  Xianmin Tang ,  Vijay Parhke ,  Rongjun Wang

发明人： Lara Hawrylchak ,  Xianmin Tang ,  Vijay Parhke ,  Rongjun Wang

IPC分类号： C23C14/00 ,  C23C14/06 ,  C23C14/08 ,  C23C14/14

CPC分类号： C23C14/3407

摘要： Embodiments of the invention provide encapsulated sputtering targets and methods for preparing such targets prior to a physical vapor deposition (PVD) process. In one embodiment, an encapsulated target for PVD is provided which includes a target layer containing lanthanum disposed on a backing plate and an encapsulation layer containing titanium disposed on or over the target layer. In one example, the target layer contains metallic lanthanum or lanthanum oxide and the encapsulation layer contains titanium. The encapsulation layer may have a thickness within a range from about 1,000 Å to about 2,000 Å. In another embodiment, a method for preparing an encapsulated target prior to a PVD process is provided which includes positioning an encapsulated target within a PVD chamber and exposing the encapsulation layer to a plasma while removing the encapsulation layer and revealing an upper surface of the target layer.

摘要翻译： 本发明的实施方案提供了封装的溅射靶和在物理气相沉积（PVD））方法之前制备这些靶的方法。 在一个实施方案中，提供了用于PVD的包封的靶，其包括设置在背板上的含有镧的靶层和包含设置在靶层上或上的钛的包封层。 在一个实例中，目标层包含金属镧或氧化镧，并且包封层含有钛。 封装层的厚度可以在大约从1000到大约2000的范围内。 在另一个实施方案中，提供了一种用于在PVD工艺之前制备封装的靶的方法，其包括将包封的靶定位在PVD室内并将封装层暴露于等离子体，同时移除封装层并露出靶层的上表面 。

公开(公告)号：US20100108500A1

公开(公告)日：2010-05-06

申请号：US12263013

申请日：2008-10-31

申请人： LARA HAWRYLCHAK ,  Xianmin Tang ,  Vijay Parhke ,  Rongjun Wang

发明人： LARA HAWRYLCHAK ,  Xianmin Tang ,  Vijay Parhke ,  Rongjun Wang

IPC分类号： C23C14/34 ,  C23F1/00

CPC分类号： C23C14/3407

摘要： Embodiments of the invention provide encapsulated sputtering targets and methods for preparing such targets prior to a physical vapor deposition (PVD) process. In one embodiment, an encapsulated target for PVD is provided which includes a target layer containing lanthanum disposed on a backing plate and an encapsulation layer containing titanium disposed on or over the target layer. In one example, the target layer contains metallic lanthanum or lanthanum oxide and the encapsulation layer contains titanium. The encapsulation layer may have a thickness within a range from about 1,000 Å to about 2,000 Å. In another embodiment, a method for preparing an encapsulated target prior to a PVD process is provided which includes positioning an encapsulated target within a PVD chamber and exposing the encapsulation layer to a plasma while removing the encapsulation layer and revealing an upper surface of the target layer.

摘要翻译： 本发明的实施方案提供了封装的溅射靶和在物理气相沉积（PVD））方法之前制备这些靶的方法。 在一个实施方案中，提供了用于PVD的包封的靶，其包括设置在背板上的含有镧的靶层和包含设置在靶层上或上的钛的包封层。 在一个实例中，目标层包含金属镧或氧化镧，并且包封层含有钛。 封装层的厚度可以在大约从1000到大约2000的范围内。 在另一个实施方案中，提供了一种用于在PVD工艺之前制备封装的靶的方法，其包括将包封的靶定位在PVD室内并将封装层暴露于等离子体，同时移除封装层并露出靶层的上表面 。

公开(公告)号：US06887786B2

公开(公告)日：2005-05-03

申请号：US10409406

申请日：2003-04-07

申请人： Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  John C. Forster ,  Jick M. Yu

发明人： Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  John C. Forster ,  Jick M. Yu

IPC分类号： C23C14/04 ,  C23C14/06 ,  C23C14/18 ,  C23C14/58 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/185 ,  C23C14/5873 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76865

摘要： A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.

摘要翻译： 提供了第一种方法，用于通过在（1）形成在基底上的金属特征的基底上溅射沉积氮化钽层而在衬底上形成阻挡层; （2）形成在所述金属特征上的电介质层; 和（3）形成在电介质层中的通孔以暴露金属特征。 通孔具有侧壁和底部，宽度为约0.18微米或更小。 氮化钽层沉积在通孔的侧壁和底部以及电介质层的场区上; 并且在场区域具有至少约200埃的厚度。 第一种方法还包括在相同的室中在衬底上溅射沉积钽层。 该钽层的厚度在场区域上小于约100埃。 提供其他方面。

公开(公告)号：US20100096273A1

公开(公告)日：2010-04-22

申请号：US12256418

申请日：2008-10-22

申请人： Qian Luo ,  Arvind Sundarrajan ,  Hua Chung ,  Xianmin Tang ,  Jick M. Yu ,  Murali K. Narasimhan

发明人： Qian Luo ,  Arvind Sundarrajan ,  Hua Chung ,  Xianmin Tang ,  Jick M. Yu ,  Murali K. Narasimhan

IPC分类号： H01L21/288

CPC分类号： H01L21/76873 ,  C25D5/02 ,  C25D21/12 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76877

摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.

摘要翻译： 一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。 在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。 衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。 在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。 掺杂剂主要并入到场区域上的导电种子层中。 导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且金属沉积中几乎没有或没有空隙形成 在开口。

公开(公告)号：US20070209925A1

公开(公告)日：2007-09-13

申请号：US11373643

申请日：2006-03-09

申请人： Xianmin Tang ,  Praburam Gopalraja ,  Jenn Wang ,  Jick Yu

发明人： Xianmin Tang ,  Praburam Gopalraja ,  Jenn Wang ,  Jick Yu

IPC分类号： C23C14/32

CPC分类号： C23C14/165 ,  C23C14/5873 ,  H01J37/321 ,  H01J37/3266 ,  H01J37/3408 ,  H01J2237/334 ,  H01L21/2855 ,  H01L21/32136 ,  H01L21/76844

摘要： A substrate processing method practiced in a plasma sputter reactor including an RF coil and two or more coaxial electromagnets, at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.

摘要翻译： 在包括RF线圈和两个或更多个同轴电磁体的等离子体溅射反应器中实施的衬底处理方法，其中至少两个以不同的半径缠绕。 在阻挡层之后，例如钽被溅射沉积到通孔中，RF线圈被供电以对阻挡层进行氩溅射蚀刻，并且调节到电磁体的电流以引导氩离子，例如以消除 侧壁不对称。 例如，两个电磁铁由具有相反极性的不相等的电流供电，或者以不同高度包装的第三电磁体被供电。 在一个实施例中，转向拉直晶片边缘附近的轨迹。 在另一个实施例中，蚀刻被分成两个步骤，其中操纵以相反的角度倾斜轨迹。 本发明也可以应用于其它材料，例如铜。

公开(公告)号：US20070059502A1

公开(公告)日：2007-03-15

申请号：US11511869

申请日：2006-08-29

申请人： Rongjun Wang ,  Hua Chung ,  Xianmin Tang ,  Jenn Wang ,  Wei Wang ,  Yoichiro Tanaka ,  Jick Yu ,  Praburam Gopalraja

发明人： Rongjun Wang ,  Hua Chung ,  Xianmin Tang ,  Jenn Wang ,  Wei Wang ,  Yoichiro Tanaka ,  Jick Yu ,  Praburam Gopalraja

IPC分类号： B32B7/00 ,  B32B3/00 ,  C23C16/00 ,  B05D5/12 ,  C23C14/00

CPC分类号： C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/485 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24917 ,  Y10T428/24926 ,  H01L2924/00

摘要： A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.

摘要翻译： 用于在垂直电互连结构中沉积导电屏障或其它衬垫层的制造方法和产品。 一个实施方案包括通过电介质层的孔，RuTaN的阻挡层，RuTa的粘附层和形成铜电镀衬垫的铜籽晶层。 钌含量优选大于50原子％，更优选至少80原子％但小于95原子％。 阻挡层和粘附层可以被溅射沉积。 其他铂族元素代替钌和其他难熔金属代替钽。 当退火时铝合金化成RuTa呈现防潮层。 铜触点包括RuTa的不同合金分数，以将功函数转移到掺杂类型。