公开(公告)号：US10383963B2

公开(公告)日：2019-08-20

申请号：US15373175

申请日：2016-12-08

申请人： Masato Toita ,  Jianfeng Chen ,  Yuxin Li ,  Yuting Wang ,  Hironori Ishii ,  Ken Kitamura

发明人： Masato Toita ,  Jianfeng Chen ,  Yuxin Li ,  Yuting Wang ,  Hironori Ishii ,  Ken Kitamura

IPC分类号： A61L2/10 ,  H01L33/60 ,  H01L33/48 ,  H01L33/54 ,  H01L33/44 ,  H01L33/58 ,  H01L33/56 ,  H01L33/62

摘要： In various embodiments, an illumination device features an ultraviolet (UV) light-emitting device at least partially surrounded by an encapsulant. A barrier layer is disposed between the light-emitting device and the encapsulant and is configured to substantially prevent UV light emitted by the light-emitting device from entering the encapsulant.

公开(公告)号：US09935247B2

公开(公告)日：2018-04-03

申请号：US14806761

申请日：2015-07-23

申请人： Ken Kitamura ,  Masato Toita ,  Hironori Ishii ,  Yuting Wang ,  Leo J. Schowalter ,  Jianfeng Chen ,  James R. Grandusky

发明人： Ken Kitamura ,  Masato Toita ,  Hironori Ishii ,  Yuting Wang ,  Leo J. Schowalter ,  Jianfeng Chen ,  James R. Grandusky

IPC分类号： H01L33/56 ,  H01L33/54 ,  H01L33/58

CPC分类号： H01L33/56 ,  H01L33/54 ,  H01L33/58 ,  H01L2933/005 ,  H01L2933/0058

摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.

公开(公告)号：US09771666B2

公开(公告)日：2017-09-26

申请号：US14684754

申请日：2015-04-13

申请人： Crystal IS, Inc.

发明人： Robert T. Bondokov ,  Leo J. Schowalter ,  Kenneth Morgan ,  Glen A. Slack ,  Shailaja P. Rao ,  Shawn Robert Gibb

IPC分类号： C30B23/00 ,  C30B23/02 ,  C30B29/40

CPC分类号： C30B23/025 ,  C30B23/00 ,  C30B29/403 ,  Y10T428/2982

摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

公开(公告)号：US09680057B2

公开(公告)日：2017-06-13

申请号：US15267458

申请日：2016-09-16

申请人： Craig Moe ,  James R. Grandusky ,  Shawn R. Gibb ,  Leo J. Schowalter ,  Kosuke Sato ,  Tomohiro Morishita

发明人： Craig Moe ,  James R. Grandusky ,  Shawn R. Gibb ,  Leo J. Schowalter ,  Kosuke Sato ,  Tomohiro Morishita

IPC分类号： H01L33/14 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/44 ,  H01L33/00 ,  H01L33/02 ,  H01L33/36

CPC分类号： H01L33/06 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/145 ,  H01L33/32 ,  H01L33/36 ,  H01L33/405 ,  H01L33/46

摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

公开(公告)号：US09624601B2

公开(公告)日：2017-04-18

申请号：US14458861

申请日：2014-08-13

申请人： Robert T. Bondokov ,  Kenneth E. Morgan ,  Leo J. Schowalter ,  Glen A. Stack

发明人： Robert T. Bondokov ,  Kenneth E. Morgan ,  Leo J. Schowalter ,  Glen A. Stack

IPC分类号： C30B23/00 ,  C30B23/02 ,  C30B29/40 ,  H01L21/02

CPC分类号： C30B23/025 ,  C30B23/00 ,  C30B29/403 ,  H01L21/02389 ,  Y10T428/2982

摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

公开(公告)号：US09580833B2

公开(公告)日：2017-02-28

申请号：US14686812

申请日：2015-04-15

申请人： Robert T. Bondokov ,  Shailaja P. Rao ,  Shawn R. Gibb ,  Leo J. Schowalter

发明人： Robert T. Bondokov ,  Shailaja P. Rao ,  Shawn R. Gibb ,  Leo J. Schowalter

IPC分类号： C30B23/06 ,  C30B23/00 ,  C30B29/40

CPC分类号： C30B23/002 ,  C30B23/06 ,  C30B29/403

摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

摘要翻译： 在各种实施例中，在形成半导体晶体期间，在两个热梯度（平行于垂直）的比率小于10的生长室内形成基本平行且基本垂直于生长方向的生长室内的非零热梯度，其中两个热梯度（平行于垂直）的比例小于10， ，例如在生长室外设置热屏蔽。

公开(公告)号：US09525032B2

公开(公告)日：2016-12-20

申请号：US14225999

申请日：2014-03-26

申请人： Glen A. Slack ,  Leo J. Schowalter

发明人： Glen A. Slack ,  Leo J. Schowalter

IPC分类号： C30B29/38 ,  H01L29/20 ,  C30B23/00 ,  C30B29/40

CPC分类号： H01L29/207 ,  C30B23/00 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/2258 ,  H01L29/2003 ,  H01L33/325

摘要： Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.

摘要翻译： 具有高导电性和迁移率的掺杂AlN晶体和/或AlGaN外延层的制备通过例如形成包括多个杂质物质的混合晶体并电激活至少一部分晶体来实现。

公开(公告)号：US09437430B2

公开(公告)日：2016-09-06

申请号：US12020006

申请日：2008-01-25

申请人： Leo J. Schowalter ,  Joseph A. Smart ,  James R. Grandusky ,  Shiwen Liu

发明人： Leo J. Schowalter ,  Joseph A. Smart ,  James R. Grandusky ,  Shiwen Liu

IPC分类号： H01L31/0328 ,  H01L21/02 ,  H01L33/08 ,  H01L33/12

CPC分类号： H01L21/0262 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L33/08 ,  H01L33/12

摘要： Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.

摘要翻译： 制造半导体结构以包括超过其预测临界厚度的应变外延层。

公开(公告)号：US09321658B2

公开(公告)日：2016-04-26

申请号：US14472733

申请日：2014-08-29

申请人： Jianfeng Chen ,  Rajul V. Randive ,  Craig Moe

发明人： Jianfeng Chen ,  Rajul V. Randive ,  Craig Moe

IPC分类号： C02F1/32

CPC分类号： C02F1/325 ,  C02F2201/3222 ,  C02F2201/3227 ,  C02F2201/3228

摘要： In various embodiments, a fluid is treated by flowing the fluid through a flow cell having (i) a fluid entry, (ii) a fluid exit, (iii) a treatment region disposed between the fluid entry and exit, and (iv) an interior surface reflective to ultraviolet (UV) light, and diffusively reflecting UV light emitted from one or more UV light sources to illuminate the treatment region substantially uniformly, thereby treating the fluid.

摘要翻译： 在各种实施例中，流体通过使流体流过具有（i）流体入口，（ii）流体出口，（iii）设置在流体入口和出口之间的处理区域的流动池，以及（iv） 反射到紫外线（UV）光的内表面，并且扩散地反射从一个或多个UV光源发射的UV光基本均匀地照射处理区域，从而处理流体。

公开(公告)号：US09293670B2

公开(公告)日：2016-03-22

申请号：US14679655

申请日：2015-04-06

申请人： Masato Toita ,  Jianfeng Chen ,  Yuxin Li ,  Yuting Wang ,  Hironori Ishii ,  Ken Kitamura

发明人： Masato Toita ,  Jianfeng Chen ,  Yuxin Li ,  Yuting Wang ,  Hironori Ishii ,  Ken Kitamura

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L33/58 ,  H01L33/56 ,  H01L33/48 ,  H01L33/62

CPC分类号： A61L2/10 ,  H01L33/44 ,  H01L33/483 ,  H01L33/486 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2924/1815 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014

摘要： In various embodiments, an illumination device features an ultraviolet (UV) light-emitting device at least partially surrounded by an encapsulant. A barrier layer is disposed between the light-emitting device and the encapsulant and is configured to substantially prevent UV light emitted by the light-emitting device from entering the encapsulant.

摘要翻译： 在各种实施例中，照明装置具有至少部分地被密封剂包围的紫外（UV）发光装置。 阻挡层设置在发光器件和密封剂之间，并且被配置为基本上防止由发光器件发射的UV光进入密封剂。